JPS6322259A - Semiconductor wafer grinding method and device thereof - Google Patents

Semiconductor wafer grinding method and device thereof

Info

Publication number
JPS6322259A
JPS6322259A JP16280286A JP16280286A JPS6322259A JP S6322259 A JPS6322259 A JP S6322259A JP 16280286 A JP16280286 A JP 16280286A JP 16280286 A JP16280286 A JP 16280286A JP S6322259 A JPS6322259 A JP S6322259A
Authority
JP
Japan
Prior art keywords
wafer
grindstone
finishing
processing
rough
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16280286A
Other languages
Japanese (ja)
Inventor
Takatoshi Maruyama
丸山 孝利
Shuichi Tawarasako
田原迫 修一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Cable Ltd
Original Assignee
Hitachi Cable Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Cable Ltd filed Critical Hitachi Cable Ltd
Priority to JP16280286A priority Critical patent/JPS6322259A/en
Publication of JPS6322259A publication Critical patent/JPS6322259A/en
Pending legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B9/00Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
    • B24B9/02Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground
    • B24B9/06Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
    • B24B9/065Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of thin, brittle parts, e.g. semiconductors, wafers

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)

Abstract

PURPOSE:To prevent chipping and stone loading from occurring as well as to make accuracy of finishing in a wafer and service life in a grindstone improvable, by moving the wafer onto a machining surface of the finishing grindstone installed as connected to the same driving shaft after grinding it with a roughing grindstone, and chamfering it. CONSTITUTION:When a wafer 1 is set to a chucking part 3 completely, a driving shaft 4 is moved in a horizontal direction, and a roller 5 comes into contact with a copying model 2 whereby a rough grindstone 7 and the chucking part 3 are rotated, and rough grinding for the circumference of the wafer 1 takes place is accordance with a profile of the copying model 2. And, the driving shaft 4 is moved horizontally, and the roller 5 comes off the copying model 2. Next, when travel of the driving shaft 4 is over, the wafer 1 goes down up to a grinding position of a finishing grindstone 8, whereby the driving shaft 4 travels again and the copying model 2 an the roller 5 are made contact with each other, so that the wafer 1 is chamfered by the finishing grindstone 8. Thus, the wafer is ground by two grindstones different in grain size for both roughing and finishing operations so that accuracy of finishing and machining efficiency are well improved and, what is more, service life in these grindstones is prolongable.

Description

【発明の詳細な説明】 [産業上の利用分野] 本発明は、半導体ウェハ加工方法および加工装置に関す
るものである。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor wafer processing method and processing apparatus.

[従来の技術] 半導体ウェハ(以下ウェハと称す)の外周を面取り加工
するには、倣いモデルによる方法が一般に用いられてい
る。
[Prior Art] A method using a tracing model is generally used to chamfer the outer periphery of a semiconductor wafer (hereinafter referred to as wafer).

この方法はウェハ研削用砥石を倣いモデルの形状に倣っ
て動作させ、ウェハを倣いモデルと同じ形状に研削しか
つ面取り加工するものである。
In this method, a wafer grinding wheel is operated to follow the shape of the copy model, and the wafer is ground and chamfered into the same shape as the copy model.

第3図に従来の面取り加工装置を示す。1はウェハ、2
は倣いモデル、3はウェハ1を取付けるチャッキング、
4は駆動軸、5はローラ、6は砥石である。
FIG. 3 shows a conventional chamfering device. 1 is wafer, 2
3 is the copying model, 3 is the chucking for attaching wafer 1,
4 is a drive shaft, 5 is a roller, and 6 is a grindstone.

ウェハ1がチャッキング部3に取付けられると、駆動軸
4が水平方向に移動し、駆動軸4に取付けられたローラ
5が倣いモデル2と接する。ローラ5が倣いモデル2に
接すると駆動軸4に取付けられた砥石6が倣いモデルの
形状に従って回転する。
When the wafer 1 is attached to the chucking section 3, the drive shaft 4 moves in the horizontal direction, and the roller 5 attached to the drive shaft 4 comes into contact with the copying model 2. When the roller 5 comes into contact with the copying model 2, the grindstone 6 attached to the drive shaft 4 rotates according to the shape of the copying model.

このときチャッキング部3も回転してウェハ1の外周が
研削されウェハ1の面取り加工が行なわれることになる
At this time, the chucking section 3 also rotates, and the outer periphery of the wafer 1 is ground, thereby chamfering the wafer 1.

第4図は第3図に示す面取り加工装置により加工された
ウェハの形状を示すもので、同図(a)が平面図、同図
(b)が縦断面図である。1が加工前のウェハ、1′が
加工後のウェハを示す。
FIG. 4 shows the shape of a wafer processed by the chamfering apparatus shown in FIG. 3, with FIG. 4(a) being a plan view and FIG. 4(b) being a longitudinal sectional view. 1 indicates a wafer before processing, and 1' indicates a wafer after processing.

[発明が解決しようとする問題点] 上述したように、従来のウェハ面取り加工では砥石によ
りウェハ外周部を研削するのであるが、この場合次のよ
うな問題点がある。
[Problems to be Solved by the Invention] As described above, in the conventional wafer chamfering process, the outer peripheral portion of the wafer is ground using a grindstone, but in this case, the following problems occur.

その一つはウェハのチッピング(欠け)と砥石の目詰り
である。
One of these is wafer chipping and grindstone clogging.

チッピングを発生させなだめには粒度の細がい砥石を使
えばよいが目詰りが生じて砥石寿命を短かくする。
A fine-grained whetstone can be used to alleviate chipping, but this will cause clogging and shorten the life of the whetstone.

また粒度の粗い砥石を使えば目詰りは減少するがチッピ
ングが増加することになる。
Also, if a coarse grindstone is used, clogging will be reduced but chipping will be increased.

このようにウェハを研削する砥石はチッピングと目詰り
の両者を勘案して選定しなければならない。
As described above, the grindstone for grinding the wafer must be selected by taking both chipping and clogging into consideration.

従来は粒度#500〜#1000の砥石が用いられてい
たが、両者を同時に満足することはできなかった。
Conventionally, a grindstone with a grain size of #500 to #1000 has been used, but it has not been possible to satisfy both requirements at the same time.

次の問題点はウェハの加工前と加工後の外径の差、すな
わち研削代とチッピングおよび目詰りとの関係である。
The next problem is the difference in the outer diameter of the wafer before and after processing, that is, the relationship between the grinding allowance and chipping and clogging.

研削代は従来より約1,5■に設定されているが、この
値を大きくしても安定に研削できるならば、例えばボー
ト法化合物半導体ウェハを製作する場合に生ずる別系統
の研削工程を通す不便がなくなり任意形状のウェハから
直接円形ウェハが得られるので経済的となるが、通常研
削代が大きくなる程チッピングや目詰りが発生し易くな
るので研削代は余り大きくすることはできない。一方チ
ッピングおよび砥石の寿命を考慮して研削代を小さく設
定すれば加工前のウェハに外径のバラツキの小さいもの
を揃える必要が生じ、またウェハ装着時の位置決め精度
も厳しくなるのでウニ八歩留りを劣化させることになる
The grinding allowance has traditionally been set at approximately 1.5 cm, but if stable grinding is possible even with this value increased, it is possible to use a different grinding process, which occurs when manufacturing compound semiconductor wafers using the boat method, for example. It is economical because it eliminates inconvenience and allows circular wafers to be obtained directly from wafers of arbitrary shapes, but the grinding allowance cannot be made too large because normally the larger the grinding allowance, the more likely chipping and clogging will occur. On the other hand, if the grinding allowance is set small in consideration of chipping and the life of the grinding wheel, it will be necessary to use wafers with small variations in outer diameter before processing, and the positioning accuracy when mounting the wafers will also become strict, making it difficult to achieve a yield rate of just eight. It will cause deterioration.

本発明の目的は、ウェハ加工精度および砥石寿命を向上
する半導体ウェハ加工方法および加工装置を提供するこ
とにある。
An object of the present invention is to provide a semiconductor wafer processing method and processing apparatus that improve wafer processing accuracy and grindstone life.

[問題点を解決するための手段] 本発明は、取付部に取付けられたウェハを研削する砥石
をウェハの加工形状を定める倣いモデルに従って駆動し
前記ウェハを研削する半導体ウェハ加工方法において、
前記砥石に荒加工する荒研削砥石と面取り加工する仕上
砥石とを用い、前記ウェハを前記荒研削砥石により研削
後、前記ウェハを前記仕上砥石の加工面に移動し、この
仕上砥石により前記ウェハを面取り加工するウェハ加工
方法を有することを第1の特徴とし、また倣いモデルと
ウェハを取付けるチャッキング部とを倣いモデル駆動軸
に取付け、ローラを前記ウェハ研削用砥石とを砥石駆動
軸に取付け、前記倣いモデルに前記ローラを移動して接
触させ、前記砥石を駆動して前記ウェハを前記倣いモデ
ルと同一形状に研削する半導体ウェハ加工装置において
、前記砥石駆動軸に荒加工する荒研削砥石と面取り加工
する仕上砥石とが連結して設けであることを第2の特徴
とし、ウェハ加工精度および砥石寿命が向上するように
して目的の達成を計ったものである。
[Means for Solving the Problems] The present invention provides a semiconductor wafer processing method in which a grindstone attached to a mounting portion for grinding a wafer is driven in accordance with a copying model that defines a processing shape of the wafer to grind the wafer.
Using a rough grinding wheel for rough processing and a finishing wheel for chamfering, the wafer is ground by the rough grinding wheel, the wafer is moved to the processing surface of the finishing wheel, and the wafer is polished by the finishing wheel. The first feature is that the method has a wafer processing method for chamfering, and further, a copy model and a chucking part for attaching the wafer are attached to a copy model drive shaft, a roller and the wafer grinding wheel are attached to the grindstone drive shaft, In a semiconductor wafer processing apparatus that moves the roller to contact the copying model and drives the grindstone to grind the wafer into the same shape as the copying model, the grinding wheel drive shaft is provided with a rough grinding wheel for rough processing and chamfering. The second feature is that the finishing grindstone for processing is provided in a connected manner, and the purpose is achieved by improving the wafer processing accuracy and the life of the grinding wheel.

[作 用] 本発明の半導体ウェハ加工方法では、倣いモデルに従っ
て砥石を駆動してウェハを加工するが、この場合荒研削
砥石と仕上砥石の二つの砥石を用い、ウェハを荒研削砥
石で研削した後、ウェハを移動して仕上砥石で面取り加
工するようにしであるので、加工時にウェハに無理な力
が加わらずチッピングや砥石の目詰りか防止できる。
[Function] In the semiconductor wafer processing method of the present invention, a wafer is processed by driving a grindstone according to a copying model, but in this case, two grindstones, a rough grinding wheel and a finishing grinder, are used, and the wafer is ground by the rough grinding wheel. After that, the wafer is moved and chamfered using a finishing whetstone, so no excessive force is applied to the wafer during processing, and chipping and clogging of the grindstone can be prevented.

また、本発明の半導体ウェハ加工装置では、倣いモデル
に従って砥石を駆動しウェハを研削する場合、荒加工す
る荒研削砥石と面取り加工する仕上砥石とを同一駆動軸
に連結して設け、ウェハを二つの砥石の加工面に移動さ
せ、荒加工と面取り加工を連続して行なえるような装置
にしであるので、ウェハの加工を高精度で行なうことが
できる。
In addition, in the semiconductor wafer processing apparatus of the present invention, when driving the grindstone according to the copying model to grind the wafer, a rough grinding wheel for rough processing and a finishing grindstone for chamfering are connected to the same drive shaft, and the wafer is The wafer can be processed with high precision because the device is designed to move the grindstone to the processing surface of one grindstone and perform rough processing and chamfering in succession.

[実施例コ 以下、本発明の一実施例を図により説明する。[Example code] Hereinafter, one embodiment of the present invention will be described with reference to the drawings.

第1図は本発明の半導体ウェハ加工装置の一実施例を示
す要部縦断面図である。第3図と同一部分には同一符号
が付けられている。
FIG. 1 is a vertical sectional view of a main part showing an embodiment of a semiconductor wafer processing apparatus of the present invention. The same parts as in FIG. 3 are given the same reference numerals.

図において、1はウェハ、2は倣いモデル、3はチャッ
キング部である。7は荒研削砥石、8は仕上加工砥石で
、共に駆動軸4に取付けられており、このように二つの
砥石を使用する点が従来の加工装置と異なる点である。
In the figure, 1 is a wafer, 2 is a copying model, and 3 is a chucking section. Reference numeral 7 denotes a rough grinding wheel, and 8 denotes a finishing grindstone, both of which are attached to the drive shaft 4. The use of two grindstones in this way is different from conventional processing equipment.

5は倣いモデル2と接触するローラである。5 is a roller that comes into contact with the copying model 2.

図によりウェハ面取り加工法を説明する。The wafer chamfering method will be explained with reference to figures.

チャッキング部3にウェハ1の取付けが完了すると、駆
動軸4が水平方向に移動し、ローラ5が倣いモデル2に
接触する。ローラ5と倣いモデル2が接触すると荒研削
砥石7、チャッキング部3が回転し、ウェハ1の外周を
倣いモデル2の形状に従って荒研削する。
When the attachment of the wafer 1 to the chucking section 3 is completed, the drive shaft 4 moves in the horizontal direction, and the roller 5 comes into contact with the copying model 2. When the roller 5 and the copying model 2 come into contact, the rough grinding wheel 7 and the chucking part 3 rotate, and the outer circumference of the wafer 1 is roughly ground according to the shape of the copying model 2.

荒研削が終了すると駆動軸4が水平に移動し、ローラ5
が倣いモデル2から離れる。
When rough grinding is completed, the drive shaft 4 moves horizontally, and the roller 5
follows model 2.

駆動軸4の移動が終了するとウェハ1が仕上加工砥石8
の研削位置まで下降する。
When the movement of the drive shaft 4 is completed, the wafer 1 is moved to the finishing grindstone 8.
The machine descends to the grinding position.

ウェハ1の下降が終了すると駆動軸4が再び移動して倣
いモデル2とローラ5が接触し、ウェハ1は仕上加工砥
石8により面取加工が行なわれることになる。
When the lowering of the wafer 1 is completed, the drive shaft 4 moves again, the copying model 2 and the roller 5 come into contact, and the wafer 1 is chamfered by the finishing grindstone 8.

この実施例の加工装置では、荒研削砥石7には粒度#1
40〜#500程度のものが用いられるが、この粒度は
ウェハ1の材質、研削量によって定められる。
In the processing device of this embodiment, the rough grinding wheel 7 has a grain size of #1.
A particle size of approximately #40 to #500 is used, and the particle size is determined by the material of the wafer 1 and the amount of grinding.

第2図はボート法による化合物半導体ウエノ1を示すも
ので、同図(a)が平面図、同図(b)が縦断面図であ
る。図においてウェハ1を円形ウェハ1″に加工する場
合、粒度#320程度のものを用い、研削時間約15秒
で加工され、円形ウェハ1”の外径が仕上りウェハ1゛
の外径より約0.2〜0.5m1ll大きくなるように
荒研削されている。この荒端削後仕上研削されるが、こ
のときの仕上加工砥石8の粒度は荒研削砥石7の場合と
同様ウェハ材質や研削面粗さなどによって異なり、例え
ば化合物半導体ウェハの場合においては、#800のも
のを用いて好結果を得ている。
FIG. 2 shows a compound semiconductor wafer 1 manufactured by the boat method, with FIG. 2(a) being a plan view and FIG. 2(b) being a longitudinal sectional view. In the figure, when wafer 1 is processed into a circular wafer 1'', a grain size of about #320 is used, the grinding time is about 15 seconds, and the outer diameter of the circular wafer 1'' is approximately 0.0 mm smaller than the outer diameter of the finished wafer 1. Roughly ground to increase the size by .2 to 0.5 ml. After this rough edge grinding, finish grinding is performed, but the grain size of the finishing grindstone 8 at this time varies depending on the wafer material, grinding surface roughness, etc., as in the case of the rough grinding wheel 7. For example, in the case of compound semiconductor wafers, # Good results have been obtained using 800.

なお、第1図では荒研削より仕上研削に移行する場合、
砥石を固定し、ウェハ1を上下に移動するような構造に
なっているが、これと反対にウェハ1を固定し、砥石7
および8を上下動させるような構造とすることも可能で
ある。
In addition, in Figure 1, when transitioning from rough grinding to finish grinding,
The structure is such that the whetstone is fixed and the wafer 1 is moved up and down, but in contrast, the wafer 1 is fixed and the whetstone 7 is moved up and down.
It is also possible to have a structure in which 8 and 8 are moved up and down.

以上、本実施例を用いることにより次のような結果が得
られる。
As described above, by using this example, the following results can be obtained.

(1)半導体ウェハの面取り加工において荒加工と仕上
加工を粒度の異なる二つの砥石で加工させることにより
、加工精度および加工効率を向上させ、高価な砥石の寿
命を著しく延長させることができる。
(1) By using two grindstones with different grain sizes for rough machining and finishing in chamfering of semiconductor wafers, machining accuracy and efficiency can be improved, and the life of expensive whetstones can be significantly extended.

(2)ウェハのチッピング不良を大幅に減少させること
ができるので、ウェハの歩留りを向上させ、原価低減を
行なうことができる。
(2) Since chipping defects of wafers can be significantly reduced, the yield of wafers can be improved and the cost can be reduced.

(3)ボート法化合物半導体ウェハの場合は他の手段に
より第1次の円形ウェハに加工しその後面取り加工が行
なわれていたが、この第1次円形加工工程をなくし、直
接面取り加工することができるので、作業効率を向上す
ることができる。
(3) In the case of boat method compound semiconductor wafers, the first circular wafer was processed by other means and then chamfering was performed, but this first circular processing step was eliminated and chamfering was performed directly. As a result, work efficiency can be improved.

[発明の効果] 本発明によれば、ウェハ加工精度および砥石寿命の向上
する半導体ウェハ加工方法および加工装置を提供するこ
とができる。
[Effects of the Invention] According to the present invention, it is possible to provide a semiconductor wafer processing method and a processing apparatus that improve wafer processing accuracy and grindstone life.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の半導体ウェハ加工装置の一実施例の要
部縦断面図、第2図はボート法化合物ウェハ平面図およ
び縦断面図、第3図従来加工装置の要部縦断面図、第4
図は面取り加工前後のウェハ平面図および縦断面図であ
る。 1・・・ウェハ、 2・・・倣いモデル、 4・・・駆動軸、 5・・・ローラ、 6.7.g・・・砥石。 代理人  弁理士  薄 1)利 幸 第1図    第2図 第 3図       第4図
FIG. 1 is a vertical sectional view of a main part of an embodiment of the semiconductor wafer processing apparatus of the present invention, FIG. 2 is a plan view and longitudinal sectional view of a boat method compound wafer, and FIG. 3 is a longitudinal sectional view of a main part of a conventional processing apparatus. Fourth
The figures are a plan view and a longitudinal cross-sectional view of the wafer before and after chamfering. DESCRIPTION OF SYMBOLS 1... Wafer, 2... Copying model, 4... Drive shaft, 5... Roller, 6.7. g...Whetstone. Agent Patent Attorney Susuki 1) Toshiyuki Figure 1 Figure 2 Figure 3 Figure 4

Claims (2)

【特許請求の範囲】[Claims] (1)取付部に取付けられたウェハを研削する砥石をウ
ェハの加工形状を定める倣いモデルに従って駆動し、前
記ウェハを研削する半導体ウェハ加工方法において、前
記砥石に荒加工する荒研削砥石と面取り加工する仕上砥
石とを用い、前記ウェハを前記荒研削砥石により研削後
、前記ウェハを前記仕上砥石の加工面に移動し、該仕上
砥石により前記ウェハを面取り加工することを特徴とす
る半導体ウェハ加工方法。
(1) In a semiconductor wafer processing method in which a grindstone for grinding a wafer attached to a mounting part is driven according to a copying model that determines the processing shape of the wafer and grinds the wafer, a rough grinding wheel for rough processing and a chamfering process are performed on the grindstone. A semiconductor wafer processing method, comprising: grinding the wafer with the rough grinding wheel, moving the wafer to a processing surface of the finishing wheel, and chamfering the wafer with the finishing wheel. .
(2)倣いモデルとウェハを取付けるチャッキング部と
を倣いモデル駆動軸に取付け、ローラと前記ウェハ研削
用砥石とを砥石駆動軸に取付け、前記倣いモデルに前記
ローラを移動して接触させ、前記砥石を駆動して前記ウ
ェハを前記倣いモデルと同一形状に研削する半導体ウェ
ハ加工装置において、前記砥石駆動軸に荒加工する荒研
削砥石と面取り加工する仕上砥石とが連結して設けられ
、荒加工と面取り加工の連続加工を可能とすることを特
徴とする半導体ウェハ加工装置。
(2) Attach a copying model and a chucking portion for attaching a wafer to the copying model drive shaft, attach a roller and the wafer grinding wheel to the grindstone drive shaft, move the roller to the copying model to bring it into contact with the copying model, and In a semiconductor wafer processing apparatus that drives a grindstone to grind the wafer into the same shape as the copy model, a rough grinding wheel for rough processing and a finishing grindstone for chamfering are connected and provided on the grindstone drive shaft, and the rough grinding wheel is connected to the grindstone for rough processing. A semiconductor wafer processing device characterized by being capable of continuous processing of chamfering and chamfering.
JP16280286A 1986-07-10 1986-07-10 Semiconductor wafer grinding method and device thereof Pending JPS6322259A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16280286A JPS6322259A (en) 1986-07-10 1986-07-10 Semiconductor wafer grinding method and device thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16280286A JPS6322259A (en) 1986-07-10 1986-07-10 Semiconductor wafer grinding method and device thereof

Publications (1)

Publication Number Publication Date
JPS6322259A true JPS6322259A (en) 1988-01-29

Family

ID=15761491

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16280286A Pending JPS6322259A (en) 1986-07-10 1986-07-10 Semiconductor wafer grinding method and device thereof

Country Status (1)

Country Link
JP (1) JPS6322259A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997048522A1 (en) * 1996-06-15 1997-12-24 Unova U.K. Limited Improvements in and relating to grinding machines
JPH10329037A (en) 1994-08-22 1998-12-15 Kiyokuei Kenma Kako Kk Round hole grinding tool for annular board and round hole grinding method utilizing the same
WO2001048752A1 (en) * 1999-12-27 2001-07-05 3M Innovative Properties Company Process for mirror-finishing the edge of a recording disk raw plate
US6332834B1 (en) 1999-03-31 2001-12-25 Nippei Toyama Corporation Method and apparatus for grinding a workpiece
CN103909451A (en) * 2014-04-03 2014-07-09 芜湖新利德玻璃制品有限公司 Edge grinding machine for special-shaped part and application of edge grinding machine

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5548934A (en) * 1978-10-04 1980-04-08 Daiichi Seiki Kk Device for grinding and bevelling wafer surface
JPS58160050A (en) * 1982-03-15 1983-09-22 Fujikoshi Kikai Kogyo Kk Chamfering method of wafer and grinding wheel used therefor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5548934A (en) * 1978-10-04 1980-04-08 Daiichi Seiki Kk Device for grinding and bevelling wafer surface
JPS58160050A (en) * 1982-03-15 1983-09-22 Fujikoshi Kikai Kogyo Kk Chamfering method of wafer and grinding wheel used therefor

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10329037A (en) 1994-08-22 1998-12-15 Kiyokuei Kenma Kako Kk Round hole grinding tool for annular board and round hole grinding method utilizing the same
WO1997048522A1 (en) * 1996-06-15 1997-12-24 Unova U.K. Limited Improvements in and relating to grinding machines
EP1048403A2 (en) * 1996-06-15 2000-11-02 Unova U.K. Limited Improvements in and relating to grinding machines
EP1048403A3 (en) * 1996-06-15 2001-12-12 Unova U.K. Limited Improvements in and relating to grinding machines
US6332834B1 (en) 1999-03-31 2001-12-25 Nippei Toyama Corporation Method and apparatus for grinding a workpiece
WO2001048752A1 (en) * 1999-12-27 2001-07-05 3M Innovative Properties Company Process for mirror-finishing the edge of a recording disk raw plate
CN103909451A (en) * 2014-04-03 2014-07-09 芜湖新利德玻璃制品有限公司 Edge grinding machine for special-shaped part and application of edge grinding machine
CN103909451B (en) * 2014-04-03 2016-06-01 芜湖新利德玻璃制品有限公司 For edge polisher and the application thereof of shaped piece

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