JPS62264858A - Surface grinding method - Google Patents
Surface grinding methodInfo
- Publication number
- JPS62264858A JPS62264858A JP10756286A JP10756286A JPS62264858A JP S62264858 A JPS62264858 A JP S62264858A JP 10756286 A JP10756286 A JP 10756286A JP 10756286 A JP10756286 A JP 10756286A JP S62264858 A JPS62264858 A JP S62264858A
- Authority
- JP
- Japan
- Prior art keywords
- grinding
- wafer
- center
- cup
- grinding stone
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 20
- 238000005520 cutting process Methods 0.000 claims description 7
- 238000003754 machining Methods 0.000 abstract description 8
- 239000004575 stone Substances 0.000 abstract 6
- 238000010586 diagram Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
Landscapes
- Grinding Of Cylindrical And Plane Surfaces (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明はシリコンウェハのような円板形状をした工作物
の平面研削方法に係り、特に、高精度な平面形状精度を
能率良く得るのに好適な平面研削方法に関するものであ
る。[Detailed Description of the Invention] [Field of Application of the Invention] The present invention relates to a surface grinding method for a disk-shaped workpiece such as a silicon wafer, and is particularly suitable for efficiently obtaining high precision in planar shape. The present invention relates to a surface grinding method.
たとえば、シリコンウェハ(以下単にウェハと呼ぶ)を
平面研削する方法としては、特開昭57−156157
や特開昭59−187445に開示された方法がある。For example, as a method for surface grinding a silicon wafer (hereinafter simply referred to as a wafer), Japanese Patent Application Laid-Open No. 57-156157
There is also a method disclosed in Japanese Patent Laid-Open No. 59-187445.
前者による研削方法の模式図を第2図(A)。A schematic diagram of the former grinding method is shown in FIG. 2(A).
(B)に示す。Shown in (B).
この方法は、カップ形砥石1を矢印方向に回転させなが
らインデックステーブル2に固定されたウェハ3の被加
工面上に平行な方向に移動させて研削する方法である。In this method, the cup-shaped grindstone 1 is rotated in the direction of the arrow and moved in a direction parallel to the surface of the wafer 3 fixed to the index table 2 to be processed.
この方法では第2図(B)に示すように研削位置により
研削幅Bが変化し、これによって研削抵抗も変化する。In this method, as shown in FIG. 2(B), the grinding width B changes depending on the grinding position, and the grinding resistance also changes accordingly.
このため研削位置により研削盤の弾性変異量が変化して
、研削面は送り方向に中高となり、良好な平面形状精度
を得ることが困難である。For this reason, the amount of elastic variation of the grinder changes depending on the grinding position, and the grinding surface becomes medium and high in the feeding direction, making it difficult to obtain good planar shape accuracy.
また、後者による研削方法の模式図を第3図に示す。こ
の方法は、ウェハ3の中心がロータリーテーブル4の回
転中心に略一致するように取付けると共に、その回転中
心がカップ形砥石1の研削作業面5の中に位置するよう
にカップ形砥石1を配置し、カップ形砥石1とウェハ3
とを回転させなからウェハ3の被加工研削面に切込み運
動を与えて研削する方法である。Moreover, a schematic diagram of the latter grinding method is shown in FIG. In this method, the wafer 3 is mounted so that the center of the rotary table 4 substantially coincides with the center of rotation, and the cup-shaped grindstone 1 is arranged so that the center of rotation is located within the grinding surface 5 of the cup-shaped grindstone 1. Then, cup-shaped grindstone 1 and wafer 3
This is a method of grinding by applying a cutting motion to the surface of the wafer 3 to be processed and ground without rotating the wafer 3.
この方法では、カップ形砥石1とウェハ3との研削面内
での位置関係は常に一定で、前記の方法のように研削幅
が変化することがないので、良好な平面形状精度を得る
ことができる6
しかしながら切込速度を極めて小さくする必要があるこ
とから、研削前のウェハの厚さのバラツキが大きいと、
エアーカット時間が多くなり、研削能率が低くなるとい
う問題があった。In this method, the positional relationship between the cup-shaped grindstone 1 and the wafer 3 within the grinding surface is always constant, and the grinding width does not change as in the above method, so it is possible to obtain good planar shape accuracy. Yes6 However, since the cutting speed needs to be extremely low, if there are large variations in the wafer thickness before grinding,
There was a problem that the air cutting time increased and the grinding efficiency decreased.
本発明は上記した従来技術の問題点を解決し、高精度と
高能率とを同時に実現することができる平面研削方法を
提供することにある。An object of the present invention is to provide a surface grinding method that solves the problems of the prior art described above and can achieve high precision and high efficiency at the same time.
本発明は、カップ形砥石の回転軸に平行な回転軸のまわ
りに回転自在に保持されたテーブルに、該テーブルの回
転中心に被加工物の中心が略一致するように被加工物を
取付け、前記カップ形砥石と前記テーブルとを回転させ
ながら回転軸に直交する方向に送り運転を与えて被研削
物を研削し、前記カップ形砥石が被加工物の中心に達し
たときに回転軸に平行な方向に切込み運動を与えて被研
削物を仕上げ研削する如くしたものである。The present invention includes mounting a workpiece on a table that is rotatably held around a rotation axis parallel to the rotation axis of a cup-shaped grindstone so that the center of the workpiece substantially coincides with the rotation center of the table, While rotating the cup-shaped grindstone and the table, a feed operation is applied in a direction perpendicular to the rotation axis to grind the workpiece, and when the cup-shaped grindstone reaches the center of the workpiece, it is parallel to the rotation axis. The cutting motion is applied in a certain direction to perform final grinding of the object to be ground.
次に本発明の一実施例を第1図(A)〜(F)により説
明する。Next, one embodiment of the present invention will be described with reference to FIGS. 1(A) to 1(F).
第1図(A)〜(F)は本発明の研削動作を示す模式図
であり、1はカップ形砥石で、回転運動と同時に、図に
おいて上下および左右方向に移動可能に保持され、かつ
、その回転軸がカップ形砥石1の回転軸と平行になるよ
うに配置されている。1(A) to (F) are schematic diagrams showing the grinding operation of the present invention, and 1 is a cup-shaped grindstone, which is held so as to be movable in the vertical and horizontal directions in the figure at the same time as the rotational movement; It is arranged so that its axis of rotation is parallel to the axis of rotation of the cup-shaped grindstone 1.
3はウェハで、その中心がロータリーテーブル4の回転
中心とほぼ一致するように取付けられている。(A)は
研削開始点を示し、ロータリテーブル4が回転し、同時
にカップ形砥石1が降下する。A wafer 3 is mounted so that its center substantially coincides with the rotation center of the rotary table 4. (A) shows the grinding start point, the rotary table 4 rotates, and at the same time the cup-shaped grindstone 1 descends.
カップ形砥石1が所定の取代t1の位置に達すると、(
B)に示すように、図において左方向に研削送りが与え
られ、(C)に示すように、ウェハ3は回転しながらク
リープフィード研削される。ウェハ3が自転運動をして
いるので、カップ形砥石1がウェハ3の中心に達すると
所定の取代t1の研削が完了する。この時カップ形砥石
1とウェハ3の位置関係は第3図と同じになる。この状
態で(D)のようにカップ形砥石1に上下方向の切込運
動を与え、所定の取代t2を研削後、(E)のように上
昇し、つづいて(F)のように右方向に移動し、(A)
の状態に戻り研削動作を完了する。When the cup-shaped grindstone 1 reaches the position of the predetermined machining allowance t1, (
As shown in (B), the grinding feed is applied to the left in the figure, and as shown in (C), the wafer 3 is subjected to creep feed grinding while rotating. Since the wafer 3 is rotating, when the cup-shaped grindstone 1 reaches the center of the wafer 3, the grinding of the predetermined machining allowance t1 is completed. At this time, the positional relationship between the cup-shaped grindstone 1 and the wafer 3 is the same as that shown in FIG. In this state, the cup-shaped grindstone 1 is given vertical cutting motion as shown in (D), and after grinding a predetermined machining allowance t2, it rises as shown in (E), and then moves to the right as shown in (F). Move to (A)
The grinding operation is completed by returning to the above state.
本発明によれば、カップ形砥石1をウェハ3の中心まで
移動させるだけでウェハ3の全面を研削できるので、第
2図に示した従来技術に比へ半分の時間で全面の研削が
完了する。この時点では、第2図の例と同様に平面精度
は悪いが(D)〜(F)で取代t2を研削することによ
り第2図の従来技術のように高精度な平面に仕上ること
ができる。According to the present invention, the entire surface of the wafer 3 can be ground by simply moving the cup-shaped grindstone 1 to the center of the wafer 3, so that the entire surface can be ground in half the time compared to the conventional technique shown in FIG. . At this point, the plane accuracy is poor as in the example shown in Fig. 2, but by grinding the machining allowance t2 in steps (D) to (F), it is possible to finish the plane with high precision as in the prior art shown in Fig. 2. .
この取代t2の値は0.01mm程度あれば充分である
ので、全研削時間も第2図に示した従来技術の約半分に
なる。このように本発明によれば、高精度な研削を高能
率に実現できるという効果がある。Since it is sufficient for the value of this machining allowance t2 to be about 0.01 mm, the total grinding time is also about half that of the conventional technique shown in FIG. As described above, according to the present invention, there is an effect that highly accurate grinding can be realized with high efficiency.
以上述べたように、本発明の方法によれば、ウェハを自
転運動させながらクリープフィード研削を行なうと同時
に、カップ形砥石がウェハの回転中心に達した時に上下
の切込み運動を与えて、平面形状精度を修正する方法と
したので、高精度な平面形状を高能率に実現することが
できる効果がある。As described above, according to the method of the present invention, creep-feed grinding is performed while rotating the wafer, and at the same time, when the cup-shaped grindstone reaches the rotation center of the wafer, vertical cutting motion is applied to the wafer to form a planar shape. Since this method corrects the accuracy, it has the effect of realizing a highly accurate planar shape with high efficiency.
第1図(A)〜(F)は本発明による研削方法の一実施
例を示す模式図である。第2図および第3図は従来の平
面研削方法を示す模式図である。
1・・・カップ形砥石、3・・・ウェハ、4・・・ロー
タリテーブル。
特 許 出 願 人 日立精工株式会社代理人 弁
理士 秋 本 正 実第1図
(C)
(D)どE、
(F)第2図
第3図
(二5FIGS. 1(A) to 1(F) are schematic diagrams showing one embodiment of the grinding method according to the present invention. FIGS. 2 and 3 are schematic diagrams showing a conventional surface grinding method. 1...Cup-shaped grindstone, 3...Wafer, 4...Rotary table. Patent Applicant Hitachi Seiko Co., Ltd. Agent Patent Attorney Tadashi Akimoto Figure 1 (C)
(D) DoE,
(F) Figure 2 Figure 3 (25
Claims (1)
面研削方法において、カップ形砥石の回転軸に平行な回
転軸のまわりに回転自在に保持されたテーブルに、該テ
ーブルの回転中心に被加工物の中心が略一致するように
被加工物を取付け、前記カップ形砥石と前記テーブルと
を回転させながら回転軸に直交する方向に送り運転を与
えて被加工物を研削し、前記カップ形砥石の研削面が被
加工物の中心に達したときに回転軸に平行な方向に切込
み運転を与えて仕上げ研削することを特徴とする平面研
削方法。1. In a surface grinding method in which a cup-shaped grindstone is used to grind the flat surface of a workpiece, a table, which is held rotatably around a rotation axis parallel to the rotation axis of the cup-shaped grindstone, is placed at the center of rotation of the table. The workpiece is mounted so that the centers of the workpieces substantially coincide with each other, and the cup-shaped grindstone and the table are rotated and fed in a direction perpendicular to the rotation axis to grind the workpiece. A surface grinding method characterized in that when the grinding surface of a shape grindstone reaches the center of the workpiece, finishing grinding is performed by applying a cutting operation in a direction parallel to the rotation axis.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10756286A JPS62264858A (en) | 1986-05-13 | 1986-05-13 | Surface grinding method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10756286A JPS62264858A (en) | 1986-05-13 | 1986-05-13 | Surface grinding method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS62264858A true JPS62264858A (en) | 1987-11-17 |
Family
ID=14462316
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10756286A Pending JPS62264858A (en) | 1986-05-13 | 1986-05-13 | Surface grinding method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS62264858A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5113622A (en) * | 1989-03-24 | 1992-05-19 | Sumitomo Electric Industries, Ltd. | Apparatus for grinding semiconductor wafer |
WO2005070619A1 (en) * | 2004-01-22 | 2005-08-04 | Shin-Etsu Handotai Co., Ltd. | Method of grinding wafer and wafer |
JP2010137338A (en) * | 2008-12-12 | 2010-06-24 | Disco Abrasive Syst Ltd | Method and device for grinding wafer |
JP2012151410A (en) * | 2011-01-21 | 2012-08-09 | Disco Abrasive Syst Ltd | Grinding method of hard substrate |
JP2015039739A (en) * | 2013-08-22 | 2015-03-02 | 株式会社ディスコ | Grinding method |
CN112518466A (en) * | 2019-09-19 | 2021-03-19 | 株式会社迪思科 | Grinding device and grinding method |
-
1986
- 1986-05-13 JP JP10756286A patent/JPS62264858A/en active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5113622A (en) * | 1989-03-24 | 1992-05-19 | Sumitomo Electric Industries, Ltd. | Apparatus for grinding semiconductor wafer |
WO2005070619A1 (en) * | 2004-01-22 | 2005-08-04 | Shin-Etsu Handotai Co., Ltd. | Method of grinding wafer and wafer |
JP2010137338A (en) * | 2008-12-12 | 2010-06-24 | Disco Abrasive Syst Ltd | Method and device for grinding wafer |
JP2012151410A (en) * | 2011-01-21 | 2012-08-09 | Disco Abrasive Syst Ltd | Grinding method of hard substrate |
JP2015039739A (en) * | 2013-08-22 | 2015-03-02 | 株式会社ディスコ | Grinding method |
CN112518466A (en) * | 2019-09-19 | 2021-03-19 | 株式会社迪思科 | Grinding device and grinding method |
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