JPS6321339B2 - - Google Patents

Info

Publication number
JPS6321339B2
JPS6321339B2 JP57184848A JP18484882A JPS6321339B2 JP S6321339 B2 JPS6321339 B2 JP S6321339B2 JP 57184848 A JP57184848 A JP 57184848A JP 18484882 A JP18484882 A JP 18484882A JP S6321339 B2 JPS6321339 B2 JP S6321339B2
Authority
JP
Japan
Prior art keywords
axis
wafer
ingot
circular
orientation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57184848A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5972730A (ja
Inventor
Tomofumi Yoshitake
Yoshinobu Ooyama
Jun Yamaguchi
Shigeru Imaoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP18484882A priority Critical patent/JPS5972730A/ja
Publication of JPS5972730A publication Critical patent/JPS5972730A/ja
Publication of JPS6321339B2 publication Critical patent/JPS6321339B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
JP18484882A 1982-10-20 1982-10-20 半導体単結晶の加工方法 Granted JPS5972730A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18484882A JPS5972730A (ja) 1982-10-20 1982-10-20 半導体単結晶の加工方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18484882A JPS5972730A (ja) 1982-10-20 1982-10-20 半導体単結晶の加工方法

Publications (2)

Publication Number Publication Date
JPS5972730A JPS5972730A (ja) 1984-04-24
JPS6321339B2 true JPS6321339B2 (Direct) 1988-05-06

Family

ID=16160366

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18484882A Granted JPS5972730A (ja) 1982-10-20 1982-10-20 半導体単結晶の加工方法

Country Status (1)

Country Link
JP (1) JPS5972730A (Direct)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61241926A (ja) * 1985-04-18 1986-10-28 Furukawa Electric Co Ltd:The 半導体結晶の加工方法
JP2012231079A (ja) * 2011-04-27 2012-11-22 Sumitomo Electric Ind Ltd 化合物半導体単結晶基板およびその製造方法
SG11201403542XA (en) 2012-01-26 2014-10-30 Shinkawa Kk Antioxidant gas supply unit
JP2014075519A (ja) 2012-10-05 2014-04-24 Shinkawa Ltd 酸化防止ガス吹き出しユニット

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS583374B2 (ja) * 1977-06-15 1983-01-21 超エル・エス・アイ技術研究組合 シリコン単結晶の処理方法

Also Published As

Publication number Publication date
JPS5972730A (ja) 1984-04-24

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