JPS5972730A - 半導体単結晶の加工方法 - Google Patents
半導体単結晶の加工方法Info
- Publication number
- JPS5972730A JPS5972730A JP18484882A JP18484882A JPS5972730A JP S5972730 A JPS5972730 A JP S5972730A JP 18484882 A JP18484882 A JP 18484882A JP 18484882 A JP18484882 A JP 18484882A JP S5972730 A JPS5972730 A JP S5972730A
- Authority
- JP
- Japan
- Prior art keywords
- axis
- ingot
- wafer
- circular
- crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 38
- 239000004065 semiconductor Substances 0.000 title claims abstract description 14
- 238000003672 processing method Methods 0.000 title claims description 4
- 238000000034 method Methods 0.000 claims abstract description 56
- 150000001875 compounds Chemical class 0.000 claims abstract description 10
- 230000001815 facial effect Effects 0.000 abstract 3
- 230000002349 favourable effect Effects 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 99
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000003754 machining Methods 0.000 description 3
- 229910000673 Indium arsenide Inorganic materials 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 101100145155 Escherichia phage lambda cIII gene Proteins 0.000 description 1
- 229910005542 GaSb Inorganic materials 0.000 description 1
- 241001347978 Major minor Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 235000019219 chocolate Nutrition 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18484882A JPS5972730A (ja) | 1982-10-20 | 1982-10-20 | 半導体単結晶の加工方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18484882A JPS5972730A (ja) | 1982-10-20 | 1982-10-20 | 半導体単結晶の加工方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5972730A true JPS5972730A (ja) | 1984-04-24 |
| JPS6321339B2 JPS6321339B2 (Direct) | 1988-05-06 |
Family
ID=16160366
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18484882A Granted JPS5972730A (ja) | 1982-10-20 | 1982-10-20 | 半導体単結晶の加工方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5972730A (Direct) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61241926A (ja) * | 1985-04-18 | 1986-10-28 | Furukawa Electric Co Ltd:The | 半導体結晶の加工方法 |
| WO2012147472A1 (ja) * | 2011-04-27 | 2012-11-01 | 住友電気工業株式会社 | 化合物半導体単結晶基板およびその製造方法 |
| US9044821B2 (en) | 2012-01-26 | 2015-06-02 | Shinkawa Ltd. | Antioxidant gas supply unit |
| US9362251B2 (en) | 2012-10-05 | 2016-06-07 | Shinkawa Ltd. | Antioxidant gas blow-off unit |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS545378A (en) * | 1977-06-15 | 1979-01-16 | Cho Lsi Gijutsu Kenkyu Kumiai | Method of processing silicon monocrystal |
-
1982
- 1982-10-20 JP JP18484882A patent/JPS5972730A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS545378A (en) * | 1977-06-15 | 1979-01-16 | Cho Lsi Gijutsu Kenkyu Kumiai | Method of processing silicon monocrystal |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61241926A (ja) * | 1985-04-18 | 1986-10-28 | Furukawa Electric Co Ltd:The | 半導体結晶の加工方法 |
| WO2012147472A1 (ja) * | 2011-04-27 | 2012-11-01 | 住友電気工業株式会社 | 化合物半導体単結晶基板およびその製造方法 |
| US9044821B2 (en) | 2012-01-26 | 2015-06-02 | Shinkawa Ltd. | Antioxidant gas supply unit |
| US9362251B2 (en) | 2012-10-05 | 2016-06-07 | Shinkawa Ltd. | Antioxidant gas blow-off unit |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6321339B2 (Direct) | 1988-05-06 |
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