JPS6321280A - 単結晶テール部の直径制御方法 - Google Patents
単結晶テール部の直径制御方法Info
- Publication number
- JPS6321280A JPS6321280A JP16269386A JP16269386A JPS6321280A JP S6321280 A JPS6321280 A JP S6321280A JP 16269386 A JP16269386 A JP 16269386A JP 16269386 A JP16269386 A JP 16269386A JP S6321280 A JPS6321280 A JP S6321280A
- Authority
- JP
- Japan
- Prior art keywords
- diameter
- tail
- pulling
- single crystal
- tail part
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 45
- 238000000034 method Methods 0.000 title claims abstract description 35
- 230000003287 optical effect Effects 0.000 claims abstract description 24
- 230000004927 fusion Effects 0.000 claims abstract description 23
- 238000005375 photometry Methods 0.000 claims description 2
- 230000008602 contraction Effects 0.000 abstract 1
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 10
- 238000004033 diameter control Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000000155 melt Substances 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 230000000007 visual effect Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16269386A JPS6321280A (ja) | 1986-07-10 | 1986-07-10 | 単結晶テール部の直径制御方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16269386A JPS6321280A (ja) | 1986-07-10 | 1986-07-10 | 単結晶テール部の直径制御方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6321280A true JPS6321280A (ja) | 1988-01-28 |
| JPH0416436B2 JPH0416436B2 (enrdf_load_stackoverflow) | 1992-03-24 |
Family
ID=15759502
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16269386A Granted JPS6321280A (ja) | 1986-07-10 | 1986-07-10 | 単結晶テール部の直径制御方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6321280A (enrdf_load_stackoverflow) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7172656B2 (en) * | 2003-05-06 | 2007-02-06 | Sumitomo Mitsubishi Silicon Corporation | Device and method for measuring position of liquid surface or melt in single-crystal-growing apparatus |
| JP2010132489A (ja) * | 2008-12-04 | 2010-06-17 | Shin Etsu Handotai Co Ltd | シリコン単結晶の製造方法 |
| DE102013210687A1 (de) * | 2013-06-07 | 2014-12-11 | Siltronic Ag | Verfahren zur Regelung des Durchmessers eines Einkristalls auf einen Solldurchmesser |
| DE19781967B3 (de) * | 1996-08-30 | 2016-05-12 | Sumitomo Mitsubishi Silicon Corp. | Verfahren und Vorrichtung zum Ziehen eines Einkristalls |
| WO2017133930A1 (de) | 2016-02-05 | 2017-08-10 | Siltronic Ag | Verfahren zum ermitteln und regeln eines durchmessers eines einkristalls beim ziehen des einkristalls |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4949306A (enrdf_load_stackoverflow) * | 1972-06-06 | 1974-05-13 | ||
| JPS61132586A (ja) * | 1984-11-30 | 1986-06-20 | ゼネラル シグナル コ−ポレ−シヨン | 結晶成長炉における結晶の直径の制御装置 |
-
1986
- 1986-07-10 JP JP16269386A patent/JPS6321280A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4949306A (enrdf_load_stackoverflow) * | 1972-06-06 | 1974-05-13 | ||
| JPS61132586A (ja) * | 1984-11-30 | 1986-06-20 | ゼネラル シグナル コ−ポレ−シヨン | 結晶成長炉における結晶の直径の制御装置 |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19781967B3 (de) * | 1996-08-30 | 2016-05-12 | Sumitomo Mitsubishi Silicon Corp. | Verfahren und Vorrichtung zum Ziehen eines Einkristalls |
| US7172656B2 (en) * | 2003-05-06 | 2007-02-06 | Sumitomo Mitsubishi Silicon Corporation | Device and method for measuring position of liquid surface or melt in single-crystal-growing apparatus |
| JP2010132489A (ja) * | 2008-12-04 | 2010-06-17 | Shin Etsu Handotai Co Ltd | シリコン単結晶の製造方法 |
| DE102013210687A1 (de) * | 2013-06-07 | 2014-12-11 | Siltronic Ag | Verfahren zur Regelung des Durchmessers eines Einkristalls auf einen Solldurchmesser |
| US9340897B2 (en) | 2013-06-07 | 2016-05-17 | Siltronic Ag | Method for controlling the diameter of a single crystal to a set point diameter |
| DE102013210687B4 (de) | 2013-06-07 | 2018-12-06 | Siltronic Ag | Verfahren zur Regelung des Durchmessers eines Einkristalls auf einen Solldurchmesser |
| WO2017133930A1 (de) | 2016-02-05 | 2017-08-10 | Siltronic Ag | Verfahren zum ermitteln und regeln eines durchmessers eines einkristalls beim ziehen des einkristalls |
| DE102016201778A1 (de) | 2016-02-05 | 2017-08-10 | Siltronic Ag | Verfahren zum Ermitteln und Regeln eines Durchmessers eines Einkristalls beim Ziehen des Einkristalls |
| KR20180099853A (ko) * | 2016-02-05 | 2018-09-05 | 실트로닉 아게 | 단결정의 인상 중에 단결정의 직경을 결정하고 조절하기 위한 방법 |
| CN108699723A (zh) * | 2016-02-05 | 2018-10-23 | 硅电子股份公司 | 在提拉单晶期间确定和调节单晶直径的方法 |
| US10738392B2 (en) | 2016-02-05 | 2020-08-11 | Siltronic Ag | Method for determining and regulating a diameter of a single crystal during pulling of the single crystal |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0416436B2 (enrdf_load_stackoverflow) | 1992-03-24 |
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