JPS6320396B2 - - Google Patents

Info

Publication number
JPS6320396B2
JPS6320396B2 JP56174107A JP17410781A JPS6320396B2 JP S6320396 B2 JPS6320396 B2 JP S6320396B2 JP 56174107 A JP56174107 A JP 56174107A JP 17410781 A JP17410781 A JP 17410781A JP S6320396 B2 JPS6320396 B2 JP S6320396B2
Authority
JP
Japan
Prior art keywords
semiconductor laser
region
laser device
current injection
active region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56174107A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5875877A (ja
Inventor
Hidenori Nomura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP56174107A priority Critical patent/JPS5875877A/ja
Publication of JPS5875877A publication Critical patent/JPS5875877A/ja
Publication of JPS6320396B2 publication Critical patent/JPS6320396B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
    • H01S5/0264—Photo-diodes, e.g. transceiver devices, bidirectional devices for monitoring the laser-output
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3054—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Semiconductor Lasers (AREA)
JP56174107A 1981-10-30 1981-10-30 モニタ内蔵半導体レ−ザ素子 Granted JPS5875877A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56174107A JPS5875877A (ja) 1981-10-30 1981-10-30 モニタ内蔵半導体レ−ザ素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56174107A JPS5875877A (ja) 1981-10-30 1981-10-30 モニタ内蔵半導体レ−ザ素子

Publications (2)

Publication Number Publication Date
JPS5875877A JPS5875877A (ja) 1983-05-07
JPS6320396B2 true JPS6320396B2 (enrdf_load_stackoverflow) 1988-04-27

Family

ID=15972765

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56174107A Granted JPS5875877A (ja) 1981-10-30 1981-10-30 モニタ内蔵半導体レ−ザ素子

Country Status (1)

Country Link
JP (1) JPS5875877A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6079788A (ja) * 1983-10-06 1985-05-07 Nec Corp 光双安定素子
JPH06105820B2 (ja) * 1985-12-25 1994-12-21 国際電信電話株式会社 モニタ付分布帰還形半導体レ−ザ

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1517537A (en) * 1975-07-16 1978-07-12 Post Office Lasers and photo-detectors

Also Published As

Publication number Publication date
JPS5875877A (ja) 1983-05-07

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