JPS5875877A - モニタ内蔵半導体レ−ザ素子 - Google Patents

モニタ内蔵半導体レ−ザ素子

Info

Publication number
JPS5875877A
JPS5875877A JP56174107A JP17410781A JPS5875877A JP S5875877 A JPS5875877 A JP S5875877A JP 56174107 A JP56174107 A JP 56174107A JP 17410781 A JP17410781 A JP 17410781A JP S5875877 A JPS5875877 A JP S5875877A
Authority
JP
Japan
Prior art keywords
region
current injection
electrode
monitor
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56174107A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6320396B2 (enrdf_load_stackoverflow
Inventor
Hidenori Nomura
野村　秀徳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP56174107A priority Critical patent/JPS5875877A/ja
Publication of JPS5875877A publication Critical patent/JPS5875877A/ja
Publication of JPS6320396B2 publication Critical patent/JPS6320396B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
    • H01S5/0264—Photo-diodes, e.g. transceiver devices, bidirectional devices for monitoring the laser-output
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3054—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Semiconductor Lasers (AREA)
JP56174107A 1981-10-30 1981-10-30 モニタ内蔵半導体レ−ザ素子 Granted JPS5875877A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56174107A JPS5875877A (ja) 1981-10-30 1981-10-30 モニタ内蔵半導体レ−ザ素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56174107A JPS5875877A (ja) 1981-10-30 1981-10-30 モニタ内蔵半導体レ−ザ素子

Publications (2)

Publication Number Publication Date
JPS5875877A true JPS5875877A (ja) 1983-05-07
JPS6320396B2 JPS6320396B2 (enrdf_load_stackoverflow) 1988-04-27

Family

ID=15972765

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56174107A Granted JPS5875877A (ja) 1981-10-30 1981-10-30 モニタ内蔵半導体レ−ザ素子

Country Status (1)

Country Link
JP (1) JPS5875877A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4674100A (en) * 1983-10-06 1987-06-16 Nec Corporation Bistable optical device
FR2592239A1 (fr) * 1985-12-25 1987-06-26 Kokusai Denshin Denwa Co Ltd Laser a semi-conducteur a contre-reaction repartie avec moniteur.

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5214393A (en) * 1975-07-16 1977-02-03 Post Office Laser and optical detector

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5214393A (en) * 1975-07-16 1977-02-03 Post Office Laser and optical detector

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4674100A (en) * 1983-10-06 1987-06-16 Nec Corporation Bistable optical device
FR2592239A1 (fr) * 1985-12-25 1987-06-26 Kokusai Denshin Denwa Co Ltd Laser a semi-conducteur a contre-reaction repartie avec moniteur.

Also Published As

Publication number Publication date
JPS6320396B2 (enrdf_load_stackoverflow) 1988-04-27

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