JPS63192460U - - Google Patents
Info
- Publication number
- JPS63192460U JPS63192460U JP8315487U JP8315487U JPS63192460U JP S63192460 U JPS63192460 U JP S63192460U JP 8315487 U JP8315487 U JP 8315487U JP 8315487 U JP8315487 U JP 8315487U JP S63192460 U JPS63192460 U JP S63192460U
- Authority
- JP
- Japan
- Prior art keywords
- flow channel
- holder
- holding
- vapor phase
- inlet pipe
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 238000001947 vapour-phase growth Methods 0.000 claims 2
- 229910052582 BN Inorganic materials 0.000 claims 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 1
- 229910010271 silicon carbide Inorganic materials 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
Description
第１図は本考案装置のフローチヤンネルの正面
図、第２図は同じく断面図、第３図はＳｉＣＶＤ
装置の断面図である。
６……保持台、１０……フローチヤンネル、１
１……チヤンネル本体、１２……切削部、１３…
…カーボン片、１４……被覆部分。
Figure 1 is a front view of the flow channel of the device of the present invention, Figure 2 is a cross-sectional view, and Figure 3 is a SiCVD
FIG. 2 is a cross-sectional view of the device. 6... Holding stand, 10... Flow channel, 1
1...Channel body, 12...Cutting part, 13...
...Carbon piece, 14...Covered part.
Claims (1)
基板保持用の保持台を設けると共に、該保持台の
ガス導入管側にフローチヤンネルを設けてなる気
相成長装置において、前記フローチヤンネルの少
なくとも保持台側近傍の外面をカーボン、ボロン
ナイトライド、シリコンカーバイトのいずれかで
被覆したことを特徴とする気相成長装置。 In a vapor phase growth apparatus, a holder for holding a substrate is provided in a reaction tube having a gas inlet pipe and a gas exhaust pipe, and a flow channel is provided on the gas inlet pipe side of the holder, at least for holding the flow channel. A vapor phase growth apparatus characterized in that the outer surface near the table side is coated with carbon, boron nitride, or silicon carbide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1987083154U JPH0441175Y2 (en) | 1987-05-29 | 1987-05-29 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1987083154U JPH0441175Y2 (en) | 1987-05-29 | 1987-05-29 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63192460U true JPS63192460U (en) | 1988-12-12 |
| JPH0441175Y2 JPH0441175Y2 (en) | 1992-09-28 |
Family
ID=30936483
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1987083154U Expired JPH0441175Y2 (en) | 1987-05-29 | 1987-05-29 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0441175Y2 (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60113923A (en) * | 1983-11-25 | 1985-06-20 | Furukawa Electric Co Ltd:The | Semiconductor thin film vapor growth device |
-
1987
- 1987-05-29 JP JP1987083154U patent/JPH0441175Y2/ja not_active Expired
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60113923A (en) * | 1983-11-25 | 1985-06-20 | Furukawa Electric Co Ltd:The | Semiconductor thin film vapor growth device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0441175Y2 (en) | 1992-09-28 |