JPS63192262A - 高周波数装置用のセラミックパッケージ - Google Patents

高周波数装置用のセラミックパッケージ

Info

Publication number
JPS63192262A
JPS63192262A JP62317609A JP31760987A JPS63192262A JP S63192262 A JPS63192262 A JP S63192262A JP 62317609 A JP62317609 A JP 62317609A JP 31760987 A JP31760987 A JP 31760987A JP S63192262 A JPS63192262 A JP S63192262A
Authority
JP
Japan
Prior art keywords
ceramic
semiconductor package
base
semiconductor device
ground plane
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62317609A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0322060B2 (enExample
Inventor
ウイリアム　エス．フイー
ジェームズ　エム．アーリー
ケビン　ジェイ．ニーガス
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fairchild Semiconductor Corp
Original Assignee
Fairchild Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fairchild Semiconductor Corp filed Critical Fairchild Semiconductor Corp
Publication of JPS63192262A publication Critical patent/JPS63192262A/ja
Publication of JPH0322060B2 publication Critical patent/JPH0322060B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/10—Containers or parts thereof
    • H10W76/12—Containers or parts thereof characterised by their shape
    • H10W76/15—Containers comprising an insulating or insulated base
    • H10W76/157—Containers comprising an insulating or insulated base having interconnections parallel to the insulating or insulated base
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/65—Shapes or dispositions of interconnections
    • H10W70/657—Shapes or dispositions of interconnections on sidewalls or bottom surfaces of the package substrates, interposers or redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68—Shapes or dispositions thereof
    • H10W70/685—Shapes or dispositions thereof comprising multiple insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68—Shapes or dispositions thereof
    • H10W70/682—Shapes or dispositions thereof comprising holes having chips therein
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07551—Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting
    • H10W72/07554—Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting changes in dispositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5449—Dispositions of bond wires not being orthogonal to a side surface of the chip, e.g. fan-out arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/547—Dispositions of multiple bond wires

Landscapes

  • Lead Frames For Integrated Circuits (AREA)
  • Microwave Amplifiers (AREA)
  • Wire Bonding (AREA)
  • Casings For Electric Apparatus (AREA)
  • Control Of Motors That Do Not Use Commutators (AREA)
JP62317609A 1986-12-19 1987-12-17 高周波数装置用のセラミックパッケージ Granted JPS63192262A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US94449986A 1986-12-19 1986-12-19
US944499 1992-09-14

Publications (2)

Publication Number Publication Date
JPS63192262A true JPS63192262A (ja) 1988-08-09
JPH0322060B2 JPH0322060B2 (enExample) 1991-03-26

Family

ID=25481524

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62317609A Granted JPS63192262A (ja) 1986-12-19 1987-12-17 高周波数装置用のセラミックパッケージ

Country Status (3)

Country Link
EP (1) EP0272188A3 (enExample)
JP (1) JPS63192262A (enExample)
KR (1) KR900008995B1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0331289A3 (en) * 1988-02-26 1991-04-03 Hitachi, Ltd. Semiconductor device with impedance matching means
JP2592308B2 (ja) * 1988-09-30 1997-03-19 株式会社日立製作所 半導体パッケージ及びそれを用いたコンピュータ
US4994902A (en) * 1988-11-30 1991-02-19 Hitachi, Ltd. Semiconductor devices and electronic system incorporating them
EP0375461A3 (en) * 1988-12-23 1991-07-03 Kabushiki Kaisha Toshiba Semiconductor device being packaged
US4899118A (en) * 1988-12-27 1990-02-06 Hughes Aircraft Company Low temperature cofired ceramic packages for microwave and millimeter wave gallium arsenide integrated circuits
ATE120883T1 (de) * 1990-05-28 1995-04-15 Siemens Ag Ic-gehäuse, bestehend aus drei beschichteten dielektrischen platten.
US7602050B2 (en) * 2005-07-18 2009-10-13 Qualcomm Incorporated Integrated circuit packaging
CN112018066B (zh) * 2020-07-27 2022-09-20 中国电子科技集团公司第十三研究所 基于htcc的高频垂直互联结构及封装结构
CN114256188A (zh) 2020-09-22 2022-03-29 华为技术有限公司 封装基板、封装结构、电子设备及制造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS492789A (enExample) * 1972-04-28 1974-01-11
JPS5640674A (en) * 1979-09-11 1981-04-16 Fujimoto Seiyaku Kk Novel cyclic urethane compound and its preparation

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1305115A (fr) * 1960-11-10 1962-09-28 Rca Corp Microélément de circuit électronique et ses modes de réalisation
US3683241A (en) * 1971-03-08 1972-08-08 Communications Transistor Corp Radio frequency transistor package
US3908185A (en) * 1974-03-06 1975-09-23 Rca Corp High frequency semiconductor device having improved metallized patterns
US4551746A (en) * 1982-10-05 1985-11-05 Mayo Foundation Leadless chip carrier apparatus providing an improved transmission line environment and improved heat dissipation

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS492789A (enExample) * 1972-04-28 1974-01-11
JPS5640674A (en) * 1979-09-11 1981-04-16 Fujimoto Seiyaku Kk Novel cyclic urethane compound and its preparation

Also Published As

Publication number Publication date
KR880008441A (ko) 1988-08-31
EP0272188A2 (en) 1988-06-22
JPH0322060B2 (enExample) 1991-03-26
EP0272188A3 (en) 1988-10-26
KR900008995B1 (ko) 1990-12-17

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