JPS63184359A - 半導体装置の入力保護回路 - Google Patents

半導体装置の入力保護回路

Info

Publication number
JPS63184359A
JPS63184359A JP62015164A JP1516487A JPS63184359A JP S63184359 A JPS63184359 A JP S63184359A JP 62015164 A JP62015164 A JP 62015164A JP 1516487 A JP1516487 A JP 1516487A JP S63184359 A JPS63184359 A JP S63184359A
Authority
JP
Japan
Prior art keywords
input
diffusion layer
protection circuit
buried layer
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62015164A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0413865B2 (enrdf_load_stackoverflow
Inventor
Kiyoshi Kobayashi
清志 小林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP62015164A priority Critical patent/JPS63184359A/ja
Publication of JPS63184359A publication Critical patent/JPS63184359A/ja
Publication of JPH0413865B2 publication Critical patent/JPH0413865B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP62015164A 1987-01-27 1987-01-27 半導体装置の入力保護回路 Granted JPS63184359A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62015164A JPS63184359A (ja) 1987-01-27 1987-01-27 半導体装置の入力保護回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62015164A JPS63184359A (ja) 1987-01-27 1987-01-27 半導体装置の入力保護回路

Publications (2)

Publication Number Publication Date
JPS63184359A true JPS63184359A (ja) 1988-07-29
JPH0413865B2 JPH0413865B2 (enrdf_load_stackoverflow) 1992-03-11

Family

ID=11881160

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62015164A Granted JPS63184359A (ja) 1987-01-27 1987-01-27 半導体装置の入力保護回路

Country Status (1)

Country Link
JP (1) JPS63184359A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015072990A (ja) * 2013-10-02 2015-04-16 サンケン電気株式会社 半導体装置

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5085284A (enrdf_load_stackoverflow) * 1973-11-29 1975-07-09
JPS53145578A (en) * 1977-05-25 1978-12-18 Nec Corp Diode varister
JPS5541770A (en) * 1978-09-19 1980-03-24 Nec Corp Zener diode
JPS55103773A (en) * 1979-02-05 1980-08-08 Nec Corp Semiconductor device
JPS5785266A (en) * 1980-11-17 1982-05-27 Toshiba Corp Zener diode
JPS59191365A (ja) * 1983-04-15 1984-10-30 Hitachi Ltd 半導体装置
JPS60249375A (ja) * 1984-05-09 1985-12-10 アナログ　デバイセス　インコーポレーテツド 埋込みツエナー・ダイオードをもつｉｃウエイフアを形成するためのイオン注入処理法及び該処理法によつて作られるｉｃ構造体

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5085284A (enrdf_load_stackoverflow) * 1973-11-29 1975-07-09
JPS53145578A (en) * 1977-05-25 1978-12-18 Nec Corp Diode varister
JPS5541770A (en) * 1978-09-19 1980-03-24 Nec Corp Zener diode
JPS55103773A (en) * 1979-02-05 1980-08-08 Nec Corp Semiconductor device
JPS5785266A (en) * 1980-11-17 1982-05-27 Toshiba Corp Zener diode
JPS59191365A (ja) * 1983-04-15 1984-10-30 Hitachi Ltd 半導体装置
JPS60249375A (ja) * 1984-05-09 1985-12-10 アナログ　デバイセス　インコーポレーテツド 埋込みツエナー・ダイオードをもつｉｃウエイフアを形成するためのイオン注入処理法及び該処理法によつて作られるｉｃ構造体

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015072990A (ja) * 2013-10-02 2015-04-16 サンケン電気株式会社 半導体装置

Also Published As

Publication number Publication date
JPH0413865B2 (enrdf_load_stackoverflow) 1992-03-11

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