JPH0413865B2 - - Google Patents

Info

Publication number
JPH0413865B2
JPH0413865B2 JP62015164A JP1516487A JPH0413865B2 JP H0413865 B2 JPH0413865 B2 JP H0413865B2 JP 62015164 A JP62015164 A JP 62015164A JP 1516487 A JP1516487 A JP 1516487A JP H0413865 B2 JPH0413865 B2 JP H0413865B2
Authority
JP
Japan
Prior art keywords
diffusion layer
input
type
region
oxide film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP62015164A
Other languages
English (en)
Japanese (ja)
Other versions
JPS63184359A (ja
Inventor
Kyoshi Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP62015164A priority Critical patent/JPS63184359A/ja
Publication of JPS63184359A publication Critical patent/JPS63184359A/ja
Publication of JPH0413865B2 publication Critical patent/JPH0413865B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP62015164A 1987-01-27 1987-01-27 半導体装置の入力保護回路 Granted JPS63184359A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62015164A JPS63184359A (ja) 1987-01-27 1987-01-27 半導体装置の入力保護回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62015164A JPS63184359A (ja) 1987-01-27 1987-01-27 半導体装置の入力保護回路

Publications (2)

Publication Number Publication Date
JPS63184359A JPS63184359A (ja) 1988-07-29
JPH0413865B2 true JPH0413865B2 (enrdf_load_stackoverflow) 1992-03-11

Family

ID=11881160

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62015164A Granted JPS63184359A (ja) 1987-01-27 1987-01-27 半導体装置の入力保護回路

Country Status (1)

Country Link
JP (1) JPS63184359A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6206058B2 (ja) * 2013-10-02 2017-10-04 サンケン電気株式会社 半導体装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5085284A (enrdf_load_stackoverflow) * 1973-11-29 1975-07-09
JPS53145578A (en) * 1977-05-25 1978-12-18 Nec Corp Diode varister
JPS5541770A (en) * 1978-09-19 1980-03-24 Nec Corp Zener diode
JPS55103773A (en) * 1979-02-05 1980-08-08 Nec Corp Semiconductor device
JPS5785266A (en) * 1980-11-17 1982-05-27 Toshiba Corp Zener diode
JPS59191365A (ja) * 1983-04-15 1984-10-30 Hitachi Ltd 半導体装置
DE3584184D1 (de) * 1984-05-09 1991-10-31 Analog Devices Inc Verfahren zum herstellen einer ic-scheibe mit vergrabener zenerdiode.

Also Published As

Publication number Publication date
JPS63184359A (ja) 1988-07-29

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees