JPS6318350B2 - - Google Patents
Info
- Publication number
- JPS6318350B2 JPS6318350B2 JP6667979A JP6667979A JPS6318350B2 JP S6318350 B2 JPS6318350 B2 JP S6318350B2 JP 6667979 A JP6667979 A JP 6667979A JP 6667979 A JP6667979 A JP 6667979A JP S6318350 B2 JPS6318350 B2 JP S6318350B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- semiconductor
- light emitting
- epitaxial layer
- conductivity type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/8215—Bodies characterised by crystalline imperfections, e.g. dislocations; characterised by the distribution of dopants, e.g. delta-doping
Landscapes
- Led Devices (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6667979A JPS55158683A (en) | 1979-05-28 | 1979-05-28 | Light emitting semiconductor |
US06/154,057 US4354140A (en) | 1979-05-28 | 1980-05-28 | Light-emitting semiconductor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6667979A JPS55158683A (en) | 1979-05-28 | 1979-05-28 | Light emitting semiconductor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS55158683A JPS55158683A (en) | 1980-12-10 |
JPS6318350B2 true JPS6318350B2 (enrdf_load_stackoverflow) | 1988-04-18 |
Family
ID=13322845
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6667979A Granted JPS55158683A (en) | 1979-05-28 | 1979-05-28 | Light emitting semiconductor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55158683A (enrdf_load_stackoverflow) |
-
1979
- 1979-05-28 JP JP6667979A patent/JPS55158683A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS55158683A (en) | 1980-12-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5008718A (en) | Light-emitting diode with an electrically conductive window | |
EP0448607A1 (en) | LIGHT EMITTING DIODE IN THE BLUE CONSTITUTED IN SILICON CARBIDE. | |
US5359209A (en) | Efficient light emitting diodes with modified window layers | |
US4048627A (en) | Electroluminescent semiconductor device having a restricted current flow | |
JP2003142492A (ja) | 3−5族化合物半導体および半導体装置 | |
JPH01106476A (ja) | SiC青色発光ダイオード | |
JP2681352B2 (ja) | 発光半導体素子 | |
JPH04313281A (ja) | 発光ダイオード | |
US4296425A (en) | Luminescent diode having multiple hetero junctions | |
US4905057A (en) | Semiconductor devices | |
US4354140A (en) | Light-emitting semiconductor | |
JPS59225580A (ja) | 半導体発光ダイオ−ドおよびその製造方法 | |
JPS61163689A (ja) | 半導体装置の製造方法 | |
JPS6318350B2 (enrdf_load_stackoverflow) | ||
JP3151096B2 (ja) | 半導体発光素子 | |
JPH0738460B2 (ja) | 半導体発光素子 | |
JPS61228684A (ja) | 半導体発光素子 | |
JPS63213378A (ja) | 半導体発光素子の製造方法 | |
JPH0389568A (ja) | 発光ダイオードおよびその製造方法 | |
JP2680762B2 (ja) | 半導体発光素子 | |
US4284467A (en) | Method for making semiconductor material | |
JP2003133561A (ja) | 3−5族化合物半導体および半導体装置 | |
JP3057547B2 (ja) | 緑色発光ダイオード | |
JPH04199587A (ja) | 光半導体素子 | |
JP3140037B2 (ja) | 半導体発光素子 |