JPS6318350B2 - - Google Patents

Info

Publication number
JPS6318350B2
JPS6318350B2 JP6667979A JP6667979A JPS6318350B2 JP S6318350 B2 JPS6318350 B2 JP S6318350B2 JP 6667979 A JP6667979 A JP 6667979A JP 6667979 A JP6667979 A JP 6667979A JP S6318350 B2 JPS6318350 B2 JP S6318350B2
Authority
JP
Japan
Prior art keywords
layer
semiconductor
light emitting
epitaxial layer
conductivity type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP6667979A
Other languages
English (en)
Japanese (ja)
Other versions
JPS55158683A (en
Inventor
Junichi Nishizawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP6667979A priority Critical patent/JPS55158683A/ja
Priority to US06/154,057 priority patent/US4354140A/en
Publication of JPS55158683A publication Critical patent/JPS55158683A/ja
Publication of JPS6318350B2 publication Critical patent/JPS6318350B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/81Bodies
    • H10H20/8215Bodies characterised by crystalline imperfections, e.g. dislocations; characterised by the distribution of dopants, e.g. delta-doping

Landscapes

  • Led Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP6667979A 1979-05-28 1979-05-28 Light emitting semiconductor Granted JPS55158683A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP6667979A JPS55158683A (en) 1979-05-28 1979-05-28 Light emitting semiconductor
US06/154,057 US4354140A (en) 1979-05-28 1980-05-28 Light-emitting semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6667979A JPS55158683A (en) 1979-05-28 1979-05-28 Light emitting semiconductor

Publications (2)

Publication Number Publication Date
JPS55158683A JPS55158683A (en) 1980-12-10
JPS6318350B2 true JPS6318350B2 (enrdf_load_stackoverflow) 1988-04-18

Family

ID=13322845

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6667979A Granted JPS55158683A (en) 1979-05-28 1979-05-28 Light emitting semiconductor

Country Status (1)

Country Link
JP (1) JPS55158683A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPS55158683A (en) 1980-12-10

Similar Documents

Publication Publication Date Title
US5008718A (en) Light-emitting diode with an electrically conductive window
EP0448607A1 (en) LIGHT EMITTING DIODE IN THE BLUE CONSTITUTED IN SILICON CARBIDE.
US5359209A (en) Efficient light emitting diodes with modified window layers
US4048627A (en) Electroluminescent semiconductor device having a restricted current flow
JP2003142492A (ja) 3−5族化合物半導体および半導体装置
JPH01106476A (ja) SiC青色発光ダイオード
JP2681352B2 (ja) 発光半導体素子
JPH04313281A (ja) 発光ダイオード
US4296425A (en) Luminescent diode having multiple hetero junctions
US4905057A (en) Semiconductor devices
US4354140A (en) Light-emitting semiconductor
JPS59225580A (ja) 半導体発光ダイオ−ドおよびその製造方法
JPS61163689A (ja) 半導体装置の製造方法
JPS6318350B2 (enrdf_load_stackoverflow)
JP3151096B2 (ja) 半導体発光素子
JPH0738460B2 (ja) 半導体発光素子
JPS61228684A (ja) 半導体発光素子
JPS63213378A (ja) 半導体発光素子の製造方法
JPH0389568A (ja) 発光ダイオードおよびその製造方法
JP2680762B2 (ja) 半導体発光素子
US4284467A (en) Method for making semiconductor material
JP2003133561A (ja) 3−5族化合物半導体および半導体装置
JP3057547B2 (ja) 緑色発光ダイオード
JPH04199587A (ja) 光半導体素子
JP3140037B2 (ja) 半導体発光素子