JPS63183263U - - Google Patents
Info
- Publication number
- JPS63183263U JPS63183263U JP6967187U JP6967187U JPS63183263U JP S63183263 U JPS63183263 U JP S63183263U JP 6967187 U JP6967187 U JP 6967187U JP 6967187 U JP6967187 U JP 6967187U JP S63183263 U JPS63183263 U JP S63183263U
- Authority
- JP
- Japan
- Prior art keywords
- magnetron sputtering
- disposed
- sputtering device
- target
- plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 4
- 239000000498 cooling water Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Description
第1図及び第2図は本考案の装置のアノード部
の構造と使用時の状況を示す図であり、第3図は
マグネトロンスパツタ装置の説明図、第4図は従
来のカソード部の使用状況を示す図である。
1:アノード、2,31:ターゲツト、3,2
7:バツキングプレート、4:カソード、5:容
器、6:マグネツト、7:基板、8:薄膜、9:
通気口、10:本体、11,21,34:磁力線
、12:冷却水、13,23:ヨーク、14,2
4,25:永久磁石、15,26:Oリング、1
6,28:ボルド、17,29:パイプ、18,
30:排水口、19,32:ロー材、20,33
:シールドカバー。
Figures 1 and 2 are diagrams showing the structure of the anode section of the device of the present invention and the usage situation, Figure 3 is an explanatory diagram of the magnetron sputtering device, and Figure 4 is a diagram showing the use of the conventional cathode section. It is a diagram showing the situation. 1: Anode, 2, 31: Target, 3, 2
7: Backing plate, 4: Cathode, 5: Container, 6: Magnet, 7: Substrate, 8: Thin film, 9:
Vent, 10: Main body, 11, 21, 34: Magnetic field lines, 12: Cooling water, 13, 23: Yoke, 14, 2
4, 25: Permanent magnet, 15, 26: O ring, 1
6, 28: Bold, 17, 29: Pipe, 18,
30: Drain port, 19, 32: Raw material, 20, 33
: Shield cover.
Claims (1)
トの下面側にマグネツトが配設され、ターゲツト
に磁場を印加するようにしたカソードを有するマ
グネトロンスパツタ装置において、前記マグネツ
トの少くとも一方の磁極がターゲツトの外周より
外側に設けられ、且つバツキングプレート上面露
出部の上方にはバツキングプレートを保護するた
めのアースされたシールドカバーが配設されてい
ることを特徴とするマグネトロンスパツタ装置。 In a magnetron sputtering device, a magnet is disposed on the lower surface side of a backing plate with a target fixed to the upper surface thereof, and has a cathode for applying a magnetic field to the target. A magnetron sputtering device characterized in that a grounded shield cover is disposed on the outside and above the exposed upper surface of the bucking plate to protect the bucking plate.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6967187U JPS63183263U (en) | 1987-05-12 | 1987-05-12 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6967187U JPS63183263U (en) | 1987-05-12 | 1987-05-12 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS63183263U true JPS63183263U (en) | 1988-11-25 |
Family
ID=30910619
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6967187U Pending JPS63183263U (en) | 1987-05-12 | 1987-05-12 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS63183263U (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105908147A (en) * | 2016-07-07 | 2016-08-31 | 重庆科技学院 | Non-equilibrium magnetron sputtering electrode and system |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60200956A (en) * | 1984-03-23 | 1985-10-11 | Anelva Corp | Discharge reaction device |
JPS6056762B2 (en) * | 1977-01-12 | 1985-12-11 | 大同特殊鋼株式会社 | Method for producing porous composite sintered material with excellent high-temperature wear resistance and oxidation resistance |
-
1987
- 1987-05-12 JP JP6967187U patent/JPS63183263U/ja active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6056762B2 (en) * | 1977-01-12 | 1985-12-11 | 大同特殊鋼株式会社 | Method for producing porous composite sintered material with excellent high-temperature wear resistance and oxidation resistance |
JPS60200956A (en) * | 1984-03-23 | 1985-10-11 | Anelva Corp | Discharge reaction device |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105908147A (en) * | 2016-07-07 | 2016-08-31 | 重庆科技学院 | Non-equilibrium magnetron sputtering electrode and system |
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