JPS5887867U - sputtering equipment - Google Patents
sputtering equipmentInfo
- Publication number
- JPS5887867U JPS5887867U JP18241681U JP18241681U JPS5887867U JP S5887867 U JPS5887867 U JP S5887867U JP 18241681 U JP18241681 U JP 18241681U JP 18241681 U JP18241681 U JP 18241681U JP S5887867 U JPS5887867 U JP S5887867U
- Authority
- JP
- Japan
- Prior art keywords
- cathode electrode
- target material
- sputtering equipment
- discharge
- sputtering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Magnetic Heads (AREA)
- Physical Vapour Deposition (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第１図はスパッタリング装置の構成図、第２図は従来装
置のカソード部の断面図、第３図は本考案装置の一例の
カソード部の断面図である。
２はアノード、３はカソード、４はスパッタリング膜を
形成せんとする基体、２０はターゲット材、２１は良熱
伝導性材である。FIG. 1 is a block diagram of a sputtering apparatus, FIG. 2 is a sectional view of a cathode section of a conventional apparatus, and FIG. 3 is a sectional view of a cathode section of an example of the apparatus of the present invention. 2 is an anode, 3 is a cathode, 4 is a substrate on which a sputtered film is to be formed, 20 is a target material, and 21 is a material with good thermal conductivity.
Claims (1)
間で放電を起こすアノード電極とを有し、該放電により
前記カソード電極上に配されたターゲツト材を対向する
基板上に付着させるスパッタリング装置において、前記
ターゲツト材と前記カソード電極との間に良熱伝導性材
を密着介在させ、且つ前記ターゲツト材の厚さを３ｍｍ
以下としたスパッタリング装置。A sputtering apparatus comprising a cathode electrode equipped with a cooling means and an anode electrode that generates a discharge between the cathode electrode and a target material disposed on the cathode electrode being deposited onto an opposing substrate by the discharge. , a material with good thermal conductivity is closely interposed between the target material and the cathode electrode, and the thickness of the target material is 3 mm.
Sputtering equipment as below.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18241681U JPS5887867U (en) | 1981-12-08 | 1981-12-08 | sputtering equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18241681U JPS5887867U (en) | 1981-12-08 | 1981-12-08 | sputtering equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5887867U true JPS5887867U (en) | 1983-06-14 |
Family
ID=29980763
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18241681U Pending JPS5887867U (en) | 1981-12-08 | 1981-12-08 | sputtering equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5887867U (en) |
-
1981
- 1981-12-08 JP JP18241681U patent/JPS5887867U/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS5887867U (en) | sputtering equipment | |
| JPS5980470U (en) | Cathode for sputtering equipment | |
| JPS5848776U (en) | sputtering equipment | |
| JPS6127333U (en) | Wafer holder for sputter | |
| JPS6120560U (en) | RF sputtering equipment | |
| JPS6093757U (en) | sputtering equipment | |
| JPS5839068U (en) | Substrate with electrostatic discharge electrodes | |
| JPS5865750U (en) | gas discharge panel | |
| JPS60194863U (en) | electron gun | |
| JPS5986654U (en) | Field emission ion source | |
| JPS6139156U (en) | Thin film forming equipment | |
| JPS58196838U (en) | Plasma CVD equipment | |
| JPS5852514U (en) | display panel | |
| JPS59129872U (en) | plasma etching equipment | |
| JPS59103756U (en) | Electrode for high frequency plasma excitation | |
| JPS60109045U (en) | Sensor for measuring electrical conductivity | |
| JPS6143262U (en) | Target for sputtering equipment | |
| JPS58107253U (en) | Immersion nozzle for continuous casting | |
| JPS5826733U (en) | Manufacturing equipment for metal thin film magnetic recording media | |
| JPS5865364U (en) | Sputter electrode with concentric double seal structure | |
| JPS5871958U (en) | magnetron | |
| JPS58177888U (en) | Electrochromic display element dial | |
| JPS6042727U (en) | Chip type solid electrolytic capacitor | |
| JPS6097766U (en) | sputtering device | |
| JPS582958U (en) | discharge lamp |