JPS6120560U - RF sputtering equipment - Google Patents
RF sputtering equipmentInfo
- Publication number
- JPS6120560U JPS6120560U JP10126284U JP10126284U JPS6120560U JP S6120560 U JPS6120560 U JP S6120560U JP 10126284 U JP10126284 U JP 10126284U JP 10126284 U JP10126284 U JP 10126284U JP S6120560 U JPS6120560 U JP S6120560U
- Authority
- JP
- Japan
- Prior art keywords
- sputtering
- sputtering equipment
- anode
- substrate holder
- cathode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Physical Vapour Deposition (AREA)
- ing And Chemical Polishing (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【図面の簡単な説明】
第１図は平担化機構を有する従来のＲＦスパツタリング
装置の断面図の概略図、第２図は薄膜感熱記録ヘッドの
層間絶縁膜の段差を示す断面図、第３図は本考案の一実
施例によるＲＦスパッタリング装置の上面図である。
３・・・Ｒ．Ｆ電源、４・・・チャンバ、５・・・層間
絶縁膜、６・・・電極、７・・・基板、１０・・・エッ
チング用電極。[Brief Description of the Drawings] Fig. 1 is a schematic cross-sectional view of a conventional RF sputtering device having a flattening mechanism, Fig. 2 is a cross-sectional view showing the step of an interlayer insulating film of a thin film thermosensitive recording head, and Fig. The figure is a top view of an RF sputtering apparatus according to an embodiment of the present invention. 3...R. F power supply, 4... Chamber, 5... Interlayer insulating film, 6... Electrode, 7... Substrate, 10... Etching electrode.
Claims (1)
リング材料を有する陰極とＲＦ電極よりなるＲＦスパッ
タリング装置において、さらに基板ホルダー部を陰極と
し、あらたに陽極を設け、同一装置内でスパッタリング
による成膜とドライエッチングが同時に可能なことを特
徴とするＲＦスパッタリング装置。In an RF sputtering device consisting of an anode in a substrate holder with a substrate rotation mechanism, a cathode containing a sputtering material, and an RF electrode, the substrate holder is used as a cathode and an anode is additionally provided to perform film formation by sputtering and drying in the same device. An RF sputtering device characterized by being capable of etching at the same time.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10126284U JPS6120560U (en) | 1984-07-06 | 1984-07-06 | RF sputtering equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10126284U JPS6120560U (en) | 1984-07-06 | 1984-07-06 | RF sputtering equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6120560U true JPS6120560U (en) | 1986-02-06 |
Family
ID=30660701
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10126284U Pending JPS6120560U (en) | 1984-07-06 | 1984-07-06 | RF sputtering equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6120560U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61210190A (en) * | 1985-03-14 | 1986-09-18 | Nippon Denso Co Ltd | Thin film forming device |
-
1984
- 1984-07-06 JP JP10126284U patent/JPS6120560U/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61210190A (en) * | 1985-03-14 | 1986-09-18 | Nippon Denso Co Ltd | Thin film forming device |
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