CN105908147A - Non-equilibrium magnetron sputtering electrode and system - Google Patents
Non-equilibrium magnetron sputtering electrode and system Download PDFInfo
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- CN105908147A CN105908147A CN201610533761.2A CN201610533761A CN105908147A CN 105908147 A CN105908147 A CN 105908147A CN 201610533761 A CN201610533761 A CN 201610533761A CN 105908147 A CN105908147 A CN 105908147A
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- electrode
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- negative electrode
- backboard
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
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Abstract
The invention provides a non-equilibrium magnetron sputtering electrode and a system. The electrode comprises an anode, a cathode and a backboard, wherein the anode and the cathode are correspondingly connected with a positive electrode and a negative electrode of a power supply; the backboard comprises an arc-surface and two planes positioned at the two sides of the arc-surface; the backboard is fixedly arranged on the front surface of the cathode through the planes; a pair of magnetic poles which are positioned below the planes and are perpendicular to the planes is embedded in the cathode; in the pair of the magnetic poles, distances from the two magnetic poles to symmetric axes of the arc surface are equal; and the magnetic poles are in reverse in polarity, and are different in magnetic field intensity. According to the non-equilibrium magnetron sputtering electrode, only two magnetic poles are arranged on the cathode of the non-equilibrium magnetron sputtering electrode, and the arc surface of the backboard fixedly arranged on the front surface of the cathode is parallel to arc-shaped non-equilibrium magnetic lines of force formed by the two magnetic poles, so that an orthotropic arc-shaped electron trap is formed on the surface of the cathode, and therefore, a plasma area with an uniform arc is formed on the surface of the cathode, a sputtering area of a target is uniformly distributed, and a sputtering rate and a utilization rate of the target are remarkably increased.
Description
Technical field
The invention belongs to thin film or coat preparing technology field, be specifically related to a kind of non-balance magnetically controlled sputter electricity
Pole and system.
Background technology
Magnetron sputtering effect is a kind of by being looped around cathode target surface work low pressure gas glow discharge
Mode and producing deposits to ion required on substrate or atom species.Come from cathode target surface from
After the material such as son, atom and atomic group is by the orthogonal electron trap of the electromagnetic field on cathode target surface, deposit to
Substrate surface, thus form dense film/coating.Magnetron sputtering can be by increasing magnetic field intensity or electric field
Intensity strengthens the effect of glow discharge, and the magnetic field intensity of increase directly results in the electronics of magnetic line of force capture and increases
Add stroke, increase the chance with other atomic collision, strengthen the ionization level of plasma.Meanwhile, increase
Electric field intensity equally increases the efficiency of glow discharge.
In recent years, Prepared by Unbalanced Magnetron Sputtering Method technology achieves progress greatly.But, current magnetic
Control sputtering technology is all based on the non-equilibrium magnetic controlled negative electrode of Window type and develops, and this magnetron cathode is deposited
In the obvious defect of one, it is that the electron trap in negative electrode front only limits ion bom bardment to runway zone,
The plasma distribution in whole non-equilibrium negative electrode front is non-uniform Distribution, directly results in the utilization rate of target
Low low with sputter rate.
Summary of the invention
The present invention provides a kind of non-balance magnetically controlled sputter electrode and system, to solve the most non-equilibrium magnetic controlled spattering
Penetrate the target utilization of technology existence and the problem that sputtering rate is relatively low.
First aspect according to embodiments of the present invention, it is provided that a kind of non-balance magnetically controlled sputter electrode, including sun
Pole, negative electrode and backboard, wherein said anode both positive and negative polarity with power supply corresponding with described negative electrode is connected, described
Backboard includes cambered surface and is positioned at two planes of described cambered surface both sides, and described backboard is fixed by described plane
On the front of described negative electrode, be embedded with in described negative electrode be positioned at below described plane and with described plane
A pair vertical magnetic pole, this is equal with the distance of described cambered surface axis of symmetry to two magnetic poles in magnetic pole, and polarity
On the contrary, magnetic field intensity different size is different.
In the optional implementation of one, described negative electrode includes that target stand and yoke, described target stand are fixed on
In described yoke, it is embedded with in described target stand and is positioned at below described plane and be somebody's turn to do vertical with described plane
To magnetic pole, and magnetic pole is vertically set in described yoke by this.
In the optional implementation of another kind, described anode includes that anode is rectified, one end that described anode is rectified
It is fixed in described yoke by insulation board.
In the optional implementation of another kind, described electrode also includes a pair magnetic conductive board, and this is to magnetic conductive board
In two magnetic conductive boards be disposed on the both sides in described negative electrode front, and relative to described cambered surface axis of symmetry pair
Claim, and parallel with described magnetic pole.
In the optional implementation of another kind, offer in described negative electrode and be positioned at below described cambered surface
Cooling bay, described cooling bay is connected with cooling-water machine by cooling tube.
In the optional implementation of another kind, between described backboard and described negative electrode, it is provided with sealing ring.
In the optional implementation of another kind, this shortest arc shape magnetic line of force forming magnetic pole is at described the moon
In the cambered surface of pole, to constitute completely orthogonal electromagnetic field.
Second aspect according to embodiments of the present invention, also provides for a kind of unbalanced magnetron sputtering system, including
Vacuum chamber, specimen holder and above-mentioned non-balance magnetically controlled sputter electrode, described specimen holder is arranged on described vacuum
Indoor and be positioned at the lower section of described non-balance magnetically controlled sputter electrode, the arc of described non-balance magnetically controlled sputter electrode
The central shaft faced in described vacuum chamber be arranged in parallel, and anode is connected with described vacuum chamber.
In the optional implementation of one, in described non-balance magnetically controlled sputter electrode, negative electrode is equidistantly distributed
At described vacuum chamber inwall and be in same level.
In the optional implementation of another kind, the pole of adjacent pole in adjacent non-balance magnetically controlled sputter electrode
Property is contrary.
The invention has the beneficial effects as follows:
1, the present invention is by only arranging two magnetic poles on the negative electrode of non-balance magnetically controlled sputter electrode, and makes to fix
The cambered surface of the backboard in negative electrode front is parallel with the Nonequilibrium magnetic line of force of the arc that two magnetic poles are formed, and can make
Cathode surface forms an orthogonal arc electron trap, so that cathode surface formation one is curved uniformly
Heating region, thus can make the sputter area of target be uniformly distributed, so that sputter rate and target
The utilization rate of material significantly improves；
2, the present invention arranges a pair magnetic conductive board by being spaced in the both sides in negative electrode front, and makes this to magnetic conductive board
Symmetrical and parallel with magnetic pole relative to cambered surface axis of symmetry, the uniformity of magnetic line of force distribution can be improved；
3, the present invention is by offering the cooling bay being positioned at below backboard cambered surface in negative electrode, and makes this cooling bay
It is connected with cooling-water machine by cooling tube, backboard can be realized cooling, such that it is able to improve the use of backboard
Life-span；
4, by the present invention in that and sealing ring is set between backboard and negative electrode, the cooling in cooling bay can be avoided
Water penetration, to backboard, affects the service behaviour of backboard；
5, the present invention by being set in qually spaced in vacuum chamber inwall by non-balance magnetically controlled sputter electrode, and makes non-flat
Weighing apparatus magnetron sputtering electrode is in same level, and adjacent pole in adjacent non-balance magnetically controlled sputter electrode
Opposite polarity, closed magnetic field can be constituted in vacuum chamber, such that it is able to increase sputter rate further.
Accompanying drawing explanation
Fig. 1 is an example structure schematic diagram of non-balance magnetically controlled sputter electrode of the present invention, wherein left side magnetic
The magnetic field intensity of middle N pole is more than the magnetic field intensity of S pole in the magnetic pole of right side；
Fig. 2 is another example structure schematic diagram of non-balance magnetically controlled sputter electrode of the present invention, wherein left side
In magnetic pole, the magnetic field intensity of N pole is less than the magnetic field intensity of S pole in the magnetic pole of right side；
Fig. 3 is an embodiment top view of Fig. 1；
Fig. 4 is an example structure schematic diagram of unbalanced magnetron sputtering system of the present invention；
Fig. 5 is an embodiment top view of Fig. 4；
Fig. 6 is another embodiment top view of Fig. 4.
Detailed description of the invention
For the technical scheme making those skilled in the art be more fully understood that in the embodiment of the present invention, and make
The above-mentioned purpose of the embodiment of the present invention, feature and advantage can become apparent from understandable, the most right
In the embodiment of the present invention, technical scheme is described in further detail.
In describing the invention, unless otherwise prescribed and limit, it should be noted that term " connects "
Should be interpreted broadly, for example, it may be mechanically connected or electrical connection, it is also possible to be two element internals
Connection, can be to be joined directly together, it is also possible to be indirectly connected to by intermediary, common for this area
For technical staff, the concrete meaning of above-mentioned term can be understood as the case may be.
See Fig. 1, for an example structure schematic diagram of non-balance magnetically controlled sputter electrode of the present invention.Should
Non-balance magnetically controlled sputter electrode can include anode, negative electrode and backboard 104, and wherein said anode is with described
Negative electrode correspondence is connected with the both positive and negative polarity of power supply, and described backboard 104 includes cambered surface and is positioned at described cambered surface two
Two planes of side, described backboard 104 is fixed on the front of described negative electrode by described plane, described
Being embedded with in negative electrode and be positioned at below described plane and a pair magnetic pole 103 vertical with described plane, this is to magnetic
In pole 103, two magnetic poles are equal with the distance of described cambered surface axis of symmetry, and opposite polarity, and magnetic field intensity is different.
In the present embodiment, this negative electrode can include yoke 101 and target stand 102, and target stand 102 is fixed on magnetic
On yoke 101, it is embedded with in target stand 102 and is positioned at below the plane of backboard 104 and vertical with this plane one
To magnetic pole 103, and magnetic pole 103 is vertically set in yoke 101 by this.The N pole court of left magnetic pole 103
To cambered surface, the S pole of right magnetic pole 103 is towards cambered surface, and the magnitude of field intensity of two magnetic poles is different, wherein
In Fig. 1, the magnetic field intensity of left magnetic pole 103 is more than the magnetic field intensity of right magnetic pole 103, left magnetic pole 103 in Fig. 2
Magnetic field intensity less than the magnetic field intensity of right magnetic pole 103.It addition, use can be offered in target stand 102
In the cavity of receiving magnetic pole 103, this cavity size matches with the size of magnetic pole 103, when assembling,
First magnetic pole 103 can be positioned in cavity, then target stand 102 is fixed on yoke by screw 106
On 101.The present invention, by being provided for accommodating the cavity of magnetic pole in target stand, can reach at magnetic pole magnetic force
During less than Expected Results, change magnetic pole, such that it is able to reduce the maintenance of non-balance magnetically controlled sputter electrode
Cost.
This anode can include that anode rectifies 113, this anode rectify 113 one end can pass through insulation board 114
It is fixed in yoke 101.By the present invention in that anode is fixed on negative electrode by insulation board, can improve
The globality of non-balance magnetically controlled sputter electrode, meanwhile, it is ensured that mutual the most not shadow between anode and negative electrode
Ring.It addition, this electrode can also include a pair magnetic conductive board 115, this is to two magnetic conductive boards in magnetic conductive board 115
115 both sides being disposed on negative electrode front (end face in Fig. 1 and Fig. 2), and relative to backboard 104
Cambered surface axis of symmetry symmetrical and parallel with magnetic pole 103.The present invention is spaced by the both sides in negative electrode front
A pair magnetic conductive board is set, and makes this symmetrical and parallel with magnetic pole relative to cambered surface axis of symmetry to magnetic conductive board,
The uniformity of magnetic line of force distribution can be improved.Wherein, in the present embodiment, this electrode can include symmetrical interval
Being arranged on a pair anode of both sides, anode front and rectify 113, this each anode rectified anode in 113 rectifies 113
Can include two horizontal segments and a vertical section, two of which horizontal segment sets up the two ends in vertical section separately,
One horizontal segment can be fixed in yoke 101 by insulation board 114, and magnetic conductive board 115 can pass through spiral shell
Nail is fixed on the vertical section side towards negative electrode.
Shown in Fig. 3, in this negative electrode, offer the cooling bay below the cambered surface being positioned at backboard 104, should
Cooling bay can be connected with the outlet of cooling-water machine, by outlet 108 and cold water by water inlet 107
The water inlet connection of machine.Owing to backboard is fixed on negative electrode, therefore the present invention is by offering position in negative electrode
Cooling bay below backboard cambered surface, and make this cooling bay be connected with cooling-water machine by cooling tube, can be right
Backboard realizes cooling, such that it is able to improve the service life of backboard.Further, since cooling water likely from
Cooling bay penetrates on backboard, thus affects the work of backboard, therefore by the present invention in that backboard 104 with
Sealing ring 112 is set between negative electrode, the service behaviour of backboard can be improved.
It is to be noted that negative electrode can arrange electrode contact 109 in yoke 101, so that this electrode
Joint 109 is connected with power cathode, and wherein this power supply can be that unidirectional current, medium frequency alternating current or high frequency are handed over
Stream electricity.The anode of anode is rectified and 113 can be connected with positive source, and can be fixed in vacuum chamber, by
This vacuum chamber is energized.Additionally, the material of magnetic pole 103 can be NdFe35 or other strong magnetic materials, target
The material of seat 102, yoke 101 and magnetic conductive board 115 can be rustless steel SS430, and the material of backboard 104 can
Think copper, anode rectify 113 material can be rustless steel, the material of insulation board 114 can be ceramic material.
It addition, this to magnetic pole 103 formed shortest arc shape magnetic line of force in the cambered surface of described target 118 (i.e.
This shortest arc shape magnetic line of force is overlapping with this cambered surface), to constitute completely orthogonal electromagnetic field.
As seen from the above-described embodiment, the present invention is by only arranging two on the negative electrode of non-balance magnetically controlled sputter electrode
Individual magnetic pole, and make the Nonequilibrium magnetic of the cambered surface being fixed on the backboard in negative electrode front and the arc of two magnetic poles formation
The line of force is parallel, and cathode surface can be made to form an orthogonal arc electron trap, so that cathode surface is formed
One curved uniform heating region, thus can make the sputter area of target be uniformly distributed, thus
The utilization rate making sputter rate and target significantly improves.
See Fig. 4, for an example structure schematic diagram of unbalanced magnetron sputtering system of the present invention.This is non-flat
Weighing apparatus magnetic control sputtering system can include vacuum chamber 110, specimen holder 111 and above-mentioned non-balance magnetically controlled sputter electricity
Pole 100, in specimen holder 111 is arranged on vacuum chamber 110 and be positioned at non-balance magnetically controlled sputter electrode 100
Lower section, the cambered surface of non-balance magnetically controlled sputter electrode 100 be arranged in parallel towards the central shaft in vacuum chamber 110,
And anode is connected with vacuum chamber 110.Wherein, between in non-balance magnetically controlled sputter electrode 100, negative electrode can wait
Away from being distributed in vacuum chamber 110 inwall and being in same level, and adjacent non-balance magnetically controlled sputter electrode
The opposite polarity of adjacent pole in 100.As it is shown in figure 5, be provided with two on the inwall of vacuum chamber 110
The individual non-balance magnetically controlled sputter electrode 100 being in same level, two non-balance magnetically controlled sputter electrodes 100
In 180 ° of arrangements, and the opposite polarity of adjacent pole；Such as, upside non-balance magnetically controlled sputter electrode in Fig. 5
Left side magnetic pole is N pole towards the polarity of vacuum chamber 110, and downside corresponding to being adjacent is non-equilibrium magnetic controlled to be spattered
Radio ultra-Left side magnetic pole is S pole towards the polarity of vacuum chamber 110.The most as shown in Figure 6, at vacuum chamber 110
Inwall on be provided with four non-balance magnetically controlled sputter electrodes 100 being in same level, four Nonequilibrium magnetics
Control sputtering electrode 100 is in 90 ° of arrangements, and the opposite polarity of adjacent pole；Such as, in Fig. 6, upside is non-flat
On the left of weighing apparatus magnetron sputtering electrode, magnetic pole is N pole towards the polarity of vacuum chamber 110, corresponding to the left side being adjacent
Side non-balance magnetically controlled sputter electrode upper pole face is S pole to the polarity of vacuum chamber 110.The present invention passes through will
Non-balance magnetically controlled sputter electrode is set in qually spaced in vacuum chamber inwall, and makes non-balance magnetically controlled sputter electrode be in
In same level, and the opposite polarity of adjacent pole, Ke Yi in adjacent non-balance magnetically controlled sputter electrode
Closed magnetic field is constituted, such that it is able to increase sputter rate further in vacuum chamber.
It addition, this unbalanced magnetron sputtering system can also include plasma generator 301 and primary rotation
Rotating shaft 302, wherein plasma generator 301 connects with vacuum chamber 100, and primary rotation axis 302 is used
In driving specimen holder 111 to rotate, and it is connected with direct current pulse power source, so that direct current pulse power source is by just
Level rotary shaft 302 provides negatively biasing voltage to specimen holder 111, so that being fixed on specimen holder 111
Substrate be under negative potential state.In this unbalanced magnetron sputtering system, vacuum chamber 100 can be with vacuum
Pump 303 connects.
The present invention is by deposition thin-film process, initially with plasma generator to working gas with anti-
Answering gas to carry out plasmarized, the plasma density that can make non-balance magnetically controlled sputter cathode surface is notable
Increase, so that bombardment increases, thus to the plasma density of substrate surface on specimen holder in the unit interval
Film quality can be improved；It has been investigated that, in deposition thin-film process, the air pressure in vacuum chamber is the highest, heavy
The consistency of the long-pending thin film obtained is the lowest, due to the fact that working gas and the reacting gas being input to vacuum chamber
Being plasma, therefore in deposition thin-film process, vacuum chamber internal gas pressure is relatively low, such that it is able to improve thin film
Consistency；It addition, it has been investigated that, although non-balance magnetically controlled sputter negative electrode also gas can be carried out etc. from
Daughter, but it is affected by the restriction of technique and material, the plasmarized ability of non-balance magnetically controlled sputter negative electrode
Relatively low (generally after being passed through gas in vacuum chamber, the gas of more than 60% all can not be in plasma)；This
Working gas and reacting gas are carried out plasmarized by using plasma generator by invention, can drop
Low working gas and the usage amount of reacting gas, such that it is able to reduce the cost of deposition thin film.
The present invention is by being driven specimen holder to rotate by primary rotation axis in film deposition process, thus drives sample
On product frame, substrate rotates, it is ensured that the uniformity of the plasma of deposition on substrate；By carrying to specimen holder
For negatively biasing voltage, can make under on specimen holder, substrate is in negative potential state, such that it is able to actively attract
Positive ion bombardment substrate surface in vacuum chamber piasma, improves thin film consistency further.
The novel unbalanced magnetron sputtering system of the present invention can be with splash-proofing sputtering metal target and compound target, with preparation
Nitride, carbide and sull or coating system.
As seen from the above-described embodiment, the present invention is by only arranging two on the negative electrode of non-balance magnetically controlled sputter electrode
Individual magnetic pole, and make the Nonequilibrium magnetic of the cambered surface being fixed on the backboard in negative electrode front and the arc of two magnetic poles formation
The line of force is parallel, and cathode surface can be made to form an orthogonal arc electron trap, so that cathode surface is formed
One curved uniform heating region, thus can make the sputter area of target be uniformly distributed, thus
The utilization rate making sputter rate and target significantly improves.
Those skilled in the art, after considering description and putting into practice invention disclosed herein, will readily occur to this
Other embodiment of invention.The application is intended to any modification, purposes or the adaptability of the present invention
Change, these modification, purposes or adaptations are followed the general principle of the present invention and include this
Bright undocumented common knowledge in the art or conventional techniques means.Description and embodiments only by
Being considered as exemplary, true scope and spirit of the invention are pointed out by claim below.
It should be appreciated that the invention is not limited in described above and illustrated in the accompanying drawings accurately
Structure, and various modifications and changes can carried out without departing from the scope.The scope of the present invention is only by institute
Attached claim limits.
Claims (10)
1. a non-balance magnetically controlled sputter electrode, it is characterised in that include anode, negative electrode and backboard, its
Described in anode both positive and negative polarity with power supply corresponding with described negative electrode be connected, described backboard includes cambered surface and position
In two planes of described cambered surface both sides, described backboard is fixed on the front of described negative electrode by described plane,
Being embedded with in described negative electrode and be positioned at below described plane and a pair magnetic pole vertical with described plane, this is right
In magnetic pole, two magnetic poles are equal with the distance of described cambered surface axis of symmetry, and opposite polarity, and magnetic field intensity is different.
Electrode the most according to claim 1, it is characterised in that described negative electrode includes target stand and yoke,
Described target stand is fixed in described yoke, be embedded with in described target stand be positioned at below described plane and with institute
State vertical this of plane to magnetic pole, and magnetic pole is vertically set in described yoke by this.
Electrode the most according to claim 2, it is characterised in that described anode includes that anode is rectified, institute
State one end that anode rectifies to be fixed in described yoke by insulation board.
Electrode the most according to claim 1, it is characterised in that described electrode also includes a pair magnetic conduction
Plate, this is disposed on the both sides in described negative electrode front to two magnetic conductive boards in magnetic conductive board, and relative to institute
State cambered surface axis of symmetry symmetrical, and parallel with described magnetic pole.
Electrode the most according to claim 1, it is characterised in that offer in described negative electrode and be positioned at
Cooling bay below described cambered surface, described cooling bay is connected with cooling-water machine by cooling tube.
Electrode the most according to claim 5, it is characterised in that between described backboard and described negative electrode
It is provided with sealing ring.
Electrode the most according to claim 1, it is characterised in that this shortest arc shape that magnetic pole is formed
The magnetic line of force is in described negative electrode cambered surface, to constitute completely orthogonal electromagnetic field.
8. a unbalanced magnetron sputtering system, it is characterised in that include vacuum chamber, specimen holder and power
Profit requires the non-balance magnetically controlled sputter electrode in 1 to 7 described in any one, and described specimen holder is arranged on institute
State in vacuum chamber and be positioned at the lower section of described non-balance magnetically controlled sputter electrode, described non-balance magnetically controlled sputter electricity
The cambered surface of pole be arranged in parallel towards the central shaft in described vacuum chamber, and anode is connected with described vacuum chamber.
System the most according to claim 8, it is characterised in that described non-balance magnetically controlled sputter electrode
Middle negative electrode is equidistantly distributed in described vacuum chamber inwall and is in same level.
System the most according to claim 9, it is characterised in that adjacent non-balance magnetically controlled sputter electricity
The opposite polarity of middle adjacent pole.
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| CN201610533761.2A CN105908147B (en) | 2016-07-07 | 2016-07-07 | Non-balance magnetically controlled sputter electrode and system |
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| CN201610533761.2A CN105908147B (en) | 2016-07-07 | 2016-07-07 | Non-balance magnetically controlled sputter electrode and system |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106399949A (en) * | 2016-10-18 | 2017-02-15 | 重庆科技学院 | Pulse laser deposition system and method for depositing thin film with same |
| CN106637109A (en) * | 2016-10-18 | 2017-05-10 | 重庆科技学院 | Magnetic-pole-assisted unbalanced magnetic control sputtering device |
| CN108004516A (en) * | 2016-10-31 | 2018-05-08 | 北京北方华创微电子装备有限公司 | Magnetron sputtering chamber, magnetron sputtering apparatus and magnetron |
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| WO2006030884A1 (en) * | 2004-09-16 | 2006-03-23 | The Doshisha | Thin film producing method |
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| WO2006030884A1 (en) * | 2004-09-16 | 2006-03-23 | The Doshisha | Thin film producing method |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106399949A (en) * | 2016-10-18 | 2017-02-15 | 重庆科技学院 | Pulse laser deposition system and method for depositing thin film with same |
| CN106637109A (en) * | 2016-10-18 | 2017-05-10 | 重庆科技学院 | Magnetic-pole-assisted unbalanced magnetic control sputtering device |
| CN108004516A (en) * | 2016-10-31 | 2018-05-08 | 北京北方华创微电子装备有限公司 | Magnetron sputtering chamber, magnetron sputtering apparatus and magnetron |
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| Publication number | Publication date |
|---|---|
| CN105908147B (en) | 2017-07-21 |
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