CN106399949A - Pulse laser deposition system and method for depositing thin film with same - Google Patents
Pulse laser deposition system and method for depositing thin film with same Download PDFInfo
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- CN106399949A CN106399949A CN201610905668.XA CN201610905668A CN106399949A CN 106399949 A CN106399949 A CN 106399949A CN 201610905668 A CN201610905668 A CN 201610905668A CN 106399949 A CN106399949 A CN 106399949A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
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Abstract
The invention provides a pulse laser deposition system and a method for depositing a thin film with the same. The pulse laser deposition system comprises a vacuum chamber, a substrate bearing frame, an unbalanced magnetic pole auxiliary target, a laser device and a light path system. The substrate bearing frame is arranged on the lower side of the vacuum chamber. The unbalanced magnetic pole auxiliary target is arranged in the vacuum chamber. The surface, facing the inner side of the vacuum chamber, of the unbalanced magnetic pole auxiliary target is provided with at least one pair of magnetic poles, and an unbalanced magnetic field is formed between the magnetic poles. A target material is arranged between the magnetic poles. Laser beams produced by the laser device are focused on the surface of the target material through the light path system so that ablation plasmas can be produced on the target material. The ablation plasmas are further ionized and uniformly distributed on the surface of the target material under the action of the unbalanced magnetic field. By means of the pulse laser deposition system and the method for depositing the thin film with the same, the uniformity problem of the thickness and the component of the laser deposition thin film can be effectively solved.
Description
Technical field
The invention belongs to nitride, carbide and sull/coat preparing technology field are and in particular to a kind of pulse
Laser deposition system and the method that deposition film is come using this system.
Background technology
Pulsed laser deposition technique (Pulsed Laser Deposition, PLD) is to prepare ferroelectricity, semiconductor, electricity at present
One of solution important technology of film such as matter and diamond.This technology has can be big with prepared composition complexity, fusing point height and hardness
The advantages of film.The general principle of pulsed laser deposition technique is that the high power pulsed laser bundle producing pulse laser focuses on
To target material surface, moment generation HTHP plasma, produced plasma orients local adiabatic expansion, transmitting, and
Deposit to and film is formed on substrate.
With the raising that film preparing technology is required, some be there is also using the film of PLD preparation and be badly in need of solution
Problem：As because laser beam spot is little, heating region concentrates on before the ablated region of target, directly contributes deposition thin
The thickness of film and composition uneven, and and then the performance of film is prepared in impact.Although with the mobile target of control system or substrate,
Control LASER SPECKLE to improve the quality of film to a certain extent in target material surface scanning, but the stability of a system and complexity also carry
Carry out problem newly.And, Laser Focusing beam spot etches the microtrabeculae of formation on target plumage brightness can be led to inclined under normal conditions
To the direction of incident laser, have a strong impact on the uniformity of film thickness and composition.
Content of the invention
The present invention provides a kind of impulse laser deposition system and the method carrying out deposition film using this system, to solve at present
The poor problem of uniformity of film that pulsed laser deposition technique is prepared.
According to embodiments of the present invention in a first aspect, providing a kind of impulse laser deposition system, hold including vacuum chamber, substrate
Carrier, non-equilibrium magnetic pole auxiliary target, laser instrument and light path system, wherein said substrate supporting frame and described non-equilibrium magnetic pole auxiliary
Target is oppositely arranged on described vacuum interior, and described non-equilibrium magnetic pole auxiliary target is provided with towards in the one side inside described vacuum chamber
At least one pair of magnetic pole and be formed with unbalanced magnetic field between this is to magnetic pole, is provided with target between this is to magnetic pole, described swashs
The laser that light device produces focuses to described target material surface by described light path system, to produce ablation plasma on described target
Body, described ablation plasma does in the presence of described unbalanced magnetic field and ionizes and be evenly distributed to described target table further
Face.
In a kind of optional implementation, described system also includes plasma generator, and described plasma occurs
Device and described vacuum chamber, plasmarized for carrying out to its interior gas of injection, and the plasma by described gas
It is delivered to described vacuum indoor.
In another kind of optional implementation, described substrate supporting frame is bias electrode, and described bias electrode is used for holding
Carry substrate, and be connected with bias supply, to form electric field on described bias electrode, to attract plasma bombardment to substrate
On.
In another kind of optional implementation, described substrate supporting frame is connected with whirligig also by rotary shaft, with
Described whirligig is made to drive described bias electrode to rotate.
In another kind of optional implementation, described system also includes temperature control system, for described vacuum interior
Temperature is controlled.
In another kind of optional implementation, described non-equilibrium magnetic pole auxiliary target includes target stand and yoke, in described target
Seat surface is provided with described target on the indoor side of described vacuum, is embedded with symmetrical with respect to described target in described target stand
At least one pair of magnetic pole of setting, to the opposite polarity of magnetic pole and magnetic field intensity is different for this.
In another kind of optional implementation, described non-equilibrium magnetic pole auxiliary target also includes magnetic conductive board, and this magnetic conductive board divides
Located at the both sides of at least one pair of magnetic pole, and it is symmetrical arranged with respect to described target.
It is provided with the cooling pond positioned at described generated beneath in target stand described in another kind of optional implementation.
Second aspect according to embodiments of the present invention, provides one kind to carry out deposition film using above-mentioned impulse laser deposition system
Method, including：
Laser instrument pass through light path system by Laser Focusing to vacuum interior setting target on, with described target produce
Ablation plasma, in the presence of being arranged at the unbalanced magnetic field formed between the pole pair of described target both sides, described burning
Erosion plasma ionizes further and is evenly distributed to described target material surface；
On the substrate of plasma-deposited to the described generated beneath of described ablation.
In a kind of optional implementation, methods described also includes：
It is injected separately into reacting gas and working gas in plasma generator, so that described plasma generator divides
Other described reacting gas and working gas are carried out plasmarized, and the plasma of generation is conveyed to described vacuum chamber
Interior；
Described plasma generator produce plasma-deposited on described substrate.
The invention has the beneficial effects as follows：
1st, the present invention passes through to arrange non-equilibrium magnetic pole auxiliary target, can make the plasma that laser ablation target material surface produces
In the presence of the unbalanced magnetic field that body is formed between pole pair plasmarized further and uniform expansion to target surface,
Excessively being concentrated due to gathering light beam such that it is able to effectively solving leads to plasma seriously uneven in the distribution of target material surface
Problem, and then can ensure that the uniformity diffusing to the plasma near substrate supporting frame, improve the thin film deposition uniformity；
2nd, the present invention passes through to arrange plasma generator, first gas was carried out before providing gas to vacuum chamber etc.
Gas ions, are additionally provided on the substrate to specimen holder for the plasma bombardment, thus can improve the density of deposition film；
3rd, the present invention passes through to provide bias voltage to substrate supporting frame, and substrate on substrate supporting frame can be made to be in biasing shape
Under state, such that it is able to actively attract vacuum interior plasma bombardment substrate surface, improve film consistency and improve film
Bond strength with substrate；
4th, the present invention passes through to drive the rotation of substrate supporting frame by whirligig in film deposition process, thus driving substrate
On carrier substrate rotation it is ensured that on substrate deposition plasma the uniformity；
5th, the present invention is controlled by indoor to vacuum temperature in film deposition process, can be to the deposition of film
Characteristic and microstructure are controlled；
6th, the present invention passes through to arrange a pair of magnetic conductive board in the both sides of a pair of magnetic pole, and makes this to magnetic conductive board with respect to target pair
Claim, magnetic line of force distribution can be improved；
7th, the present invention passes through the cooling pond that setting in target stand is located at generated beneath, can avoid non-equilibrium magnetic pole auxiliary
Target operating temperature is too high, thus can ensure that the normal work of non-equilibrium magnetic pole auxiliary target.
Brief description
Fig. 1 is an example structure schematic diagram of impulse laser deposition system of the present invention；
Fig. 2 is an example structure schematic diagram of non-equilibrium magnetic pole auxiliary target in impulse laser deposition system of the present invention；
Fig. 3 is an example structure schematic diagram of impulse laser deposition system plasma generator of the present invention；
Fig. 4 is an embodiment stream of the method that the present invention carrys out deposition film using impulse laser deposition system shown in Fig. 1
Cheng Tu.
Specific embodiment
In order that those skilled in the art more fully understand the technical scheme in the embodiment of the present invention, and make the present invention real
Apply the above-mentioned purpose of example, feature and advantage can become apparent from understandable, below in conjunction with the accompanying drawings to technical side in the embodiment of the present invention
Case is described in further detail.
In describing the invention, unless otherwise prescribed and limit, it should be noted that term " connection " should do broad sense manage
Solution, for example, it may be the connection of mechanical connection or electrical connection or two element internals, can be to be joined directly together, also may be used
To be indirectly connected to by intermediary, for the ordinary skill in the art, can understand as the case may be above-mentioned
The concrete meaning of term.
Referring to Fig. 1, it is an example structure schematic diagram of impulse laser deposition system of the present invention.This pulsed laser deposition
System can include vacuum chamber 1, laser instrument 2, light path system 3, non-equilibrium magnetic pole auxiliary target 4, plasma generator 5, substrate
Carrier 6 and temperature control system 9, wherein said substrate supporting frame 6 and described non-equilibrium magnetic pole auxiliary target 4 are oppositely arranged on described true
In empty room 1, described non-equilibrium magnetic pole auxiliary target 4 is provided with least one pair of magnetic pole 16 towards in the one side of described vacuum chamber 1 inner side
And it is formed with unbalanced magnetic field between this is to magnetic pole 16, it is provided with target 15 between this is to magnetic pole 16, described laser instrument 2 produces
Raw laser focuses to described target 15 surface by described light path system 3, to produce ablation plasma on described target 15
Body.The present invention passes through to arrange non-equilibrium magnetic pole auxiliary target, can make the plasma that laser ablation target material surface produces in magnetic
Extremely between in the presence of the unbalanced magnetic field that formed plasmarized further and uniform expansion to target surface, thus can
Excessively being concentrated due to gathering light beam with effectively solving leads to plasma in the seriously uneven problem of the distribution of target material surface, enters
And can ensure that the uniformity diffusing to the plasma near substrate supporting frame, improve the thin film deposition uniformity.
In the present embodiment, non-equilibrium magnetic pole auxiliary target 4 can be as shown in Fig. 2 it can include target stand 10, yoke 13, lead
Magnetic sheet 14, target 15 and magnetic pole 16, are wherein provided with target on described target stand 10 is towards the one side of described vacuum chamber 1 inner side
15, it is embedded with least one pair of magnetic pole 16 symmetrically arranged with respect to described target 15 in described target stand 10, this is to magnetic pole 16
Opposite polarity and magnetic field intensity difference, the polarity of such as left side magnetic pole is N-S, and the polarity of right side magnetic pole is S-N, left side magnetic pole
Magnetic field intensity is more than the magnetic field intensity of right side magnetic pole.In non-equilibrium magnetic pole auxiliary target 4 shown in Fig. 2, magnetic conductive board 14 sets in pairs
Put, the magnetic conductive board 14 being arranged in pairs is divided into the both sides of at least one pair of magnetic pole 16, and is symmetrical arranged with respect to target 15.The present invention
By arranging a pair of magnetic conductive board in the both sides of a pair of magnetic pole, and make this symmetrical with respect to target to magnetic conductive board, can improve non-flat
The uniformity of weighing apparatus magnetic line of force distribution.Additionally, being provided with the cooling pond 17 positioned at described target 15 lower section in described target stand 10, cold
But water inlet 11 is passed through in pond 17 and delivery port 12 is connected with cooler respectively.The present invention passes through setting in target stand and is located at target
The cooling pond of lower section, can avoid non-equilibrium magnetic pole auxiliary target operating temperature too high, thus can ensure that non-equilibrium magnetic pole is auxiliary
Help the normal work of target.
In addition, the plasma generator 5 in impulse laser deposition system can be connected with vacuum chamber 1, for injection
Its interior gas carries out plasmarized, and the plasma of described gas is delivered in vacuum chamber 1.The present invention passes through setting
Gas was first carried out plasmarized before providing gas to vacuum chamber, can be additionally provided by plasma generator
Gas ions bombard the density that thus can improve deposition film on the substrate on specimen holder.Substrate supporting frame 6 can be biasing
Electrode, described bias electrode is used for carrying substrate, and is connected with bias supply 8, to form electric field on described bias electrode.This
Invention, by providing bias voltage to substrate supporting frame, can make substrate on substrate supporting frame be under bias state, thus can
Actively to attract vacuum interior plasma bombardment substrate surface, improve film consistency and the combination improving film and substrate
Intensity.Substrate supporting frame 6 can also be connected with whirligig by rotary shaft 7, so that whirligig drives described substrate supporting
Frame 6 rotates.The present invention passes through to drive the rotation of substrate supporting frame by whirligig in film deposition process, thus driving substrate to hold
On carrier substrate rotation it is ensured that on substrate deposition plasma the uniformity.Temperature control system 9 can be used for described true
Temperature in empty room is controlled, and the present invention is controlled by indoor to vacuum temperature in film deposition process, permissible
The deposition characteristics and microstructure of film are controlled.
In the present embodiment, there are two plasma generators 5, one of plasma generator is to reacting gas
(as oxygen, nitrogen or other gases) carries out plasmarized, and another plasma generator is to working gas (as Ar argon
Gas) carry out plasmarized as a example.During deposition film, plasma generator 5 can be started first, to plasma
Working gas is injected, so that plasma generator 5 carries out plasmarized, generation work etc. to working gas in generator 5
Gas ions, and the work plasma generating, after being delivered to vacuum chamber 1, in the presence of bias power, directly bombards
On substrate, thus can realize the cleaning of substrate surface.Then, inject reacting gas in another plasma generator 5,
Now two plasma generators 5 can respectively working gas and reacting gas be carried out plasmarized.Due to two etc.
Plasma generator 5 is connected with vacuum chamber 1 respectively, therefore works plasma and reactive plasma can be transported to very
In empty room 1.It should be noted that：When deposition film needs two or more reacting gas, can correspond to and set up plasma and send out
Raw device.
Wherein, the structural representation of plasma generator is as shown in figure 3, it can include being arranged on plasma generation
Water cooling tube 117 in device chamber, air inlet pipe 111, metal pipe electrode 112, earthenware 113, coil electrode 114, plasma pottery
The water inlet 109 of discharge 118 and wireway 104, wherein water cooling tube 117 can be with the delivery port of cooler (not shown)
Connection, its delivery port 108 can be connected with the water inlet of cooler (not shown)；Air inlet pipe 111 stretches into plasma and sends out
In raw device cavity and it is fixed on plasma generator cavity by flange 115.In addition, air inlet pipe 111 is sleeved on metal tube
In electrode 112, metal pipe electrode 112 is sleeved in earthenware 113, and earthenware 113 port of export outer sheath equipped with coil
Electrode 114, this metal pipe electrode 112 and coil electrode 114 are all connected with radio-frequency power supply 106.Earthenware 113 port of export passes through
Gas ions pottery discharge 118 is connected with the wireway 104 stretching in vacuum chamber 100.Plasma generator 105 is started working
When, radio-frequency power supply 106 can be first turned on, now metal pipe electrode 112 and coil electrode 114 are energized, then pass through air inlet pipe
111 inject corresponding gas into plasma generator cavity, and gas is in metal pipe electrode 112, earthenware 113 and coil electricity
Carry out plasmarized in the presence of pole 114, and pass sequentially through plasma pottery discharge 118 after plasmarized, lead
Tracheae 104 is transported in vacuum chamber 100.After deposition terminates, cooler can be opened, so that cooler passes through water cooling tube 117
Plasma generator carries out cooling treatment.
Referring to Fig. 4, it is an embodiment of the method that the present invention carrys out deposition film using above-mentioned impulse laser deposition system
Flow chart.The method may comprise steps of：
Step S401, laser instrument pass through light path system by the target material surface of Laser Focusing to vacuum interior setting, with institute
State generation ablation plasma on target, in the work being arranged at the unbalanced magnetic field formed between the pole pair of described target both sides
With under, described ablation plasma ionizes further and is evenly distributed to described target material surface.
In the present embodiment, laser instrument pass through light path system by Laser Focusing to vacuum interior setting target material surface it
Before, the method can also include following preparation：Raw material are made substrate, and is fixed on substrate after substrate is cleaned up
On carrier, compound or metal targets are installed on non-equilibrium magnetic controlled auxiliary target is towards the one side inside vacuum chamber.Using
Vavuum pump carries out vacuumizing process to vacuum chamber, so that the indoor vacuum of vacuum is less than 1.0 × 10-4Pa.Vacuum chamber is carried out
Heating, so that the indoor temperature of vacuum is in the range of 200 to 700 DEG C.
Laser instrument pass through light path system by Laser Focusing to vacuum interior setting target material surface after, the method also may be used
To include：Open whirligig, make whirligig drive substrate supporting frame to be rotated with 3-10 rev/min of rotating speed.Open etc.
Plasma generator, is injected separately into reacting gas and working gas in plasma generator, so that this plasma occurs
Device carries out plasmarized respectively to reacting gas and working gas, and the plasma of generation is conveyed to vacuum chamber.Pass through
Bias electrode provides bias voltage to substrate supporting frame, so that the power of bias electrode is in the range of 50 to 500W, so that lining
Bottom carrier actively attracts the indoor plasma bombardment of vacuum to substrate.
On step S402, the substrate of plasma-deposited to the described generated beneath of described ablation.
In the present embodiment, the plasma of ablation plasma and plasma generator generation can be by substrate supporting
Frame attracts, and actively bombardment deposition is to substrate.
As seen from the above-described embodiment, the present invention passes through to arrange non-equilibrium magnetic pole auxiliary target, can make laser ablation target
Plasmarized and uniform further in the presence of the unbalanced magnetic field that the plasma that surface produces is formed between pole pair
Extend to the surface of target, excessively concentrated due to gathering light beam such that it is able to effectively solving and lead to plasma in target material surface
It is distributed seriously uneven problem, and then can ensure that the uniformity diffusing to the plasma near substrate supporting frame, improve
The thin film deposition uniformity.
Those skilled in the art, after considering specification and putting into practice invention disclosed herein, will readily occur to its of the present invention
Its embodiment.The application is intended to any modification, purposes or the adaptations of the present invention, these modifications, purposes or
Person's adaptations are followed the general principle of the present invention and are included the undocumented common knowledge in the art of the present invention
Or conventional techniques.Description and embodiments are considered only as exemplary, and true scope and spirit of the invention are by following
Claim is pointed out.
It is described above and precision architecture illustrated in the accompanying drawings it should be appreciated that the invention is not limited in, and
And various modifications and changes can carried out without departing from the scope.The scope of the present invention only to be limited by appended claim.
Claims (10)
1. a kind of impulse laser deposition system it is characterised in that include vacuum chamber, substrate supporting frame, non-equilibrium magnetic pole auxiliary target,
Laser instrument and light path system, wherein said substrate supporting frame and described non-equilibrium magnetic pole auxiliary target are oppositely arranged on described vacuum chamber
Interior, described non-equilibrium magnetic pole auxiliary target is provided with least one pair of magnetic pole and at this to magnetic towards in the one side inside described vacuum chamber
It is formed with unbalanced magnetic field between pole, is provided with target between this is to magnetic pole, the laser that described laser instrument produces passes through described
Light path system focuses to described target material surface, and to produce ablation plasma on described target, described ablation plasma exists
Do in the presence of described unbalanced magnetic field and ionize and be evenly distributed to described target material surface further.
2. impulse laser deposition system according to claim 1 is it is characterised in that described system also includes plasma sends out
Raw device, described plasma generator and described vacuum chamber, plasmarized for carrying out to its interior gas of injection, and
The plasma of described gas is delivered to described vacuum indoor.
3. impulse laser deposition system according to claim 1 is it is characterised in that described substrate supporting frame is biased electrical
Pole, described bias electrode is used for carrying substrate, and is connected with bias supply, to form electric field on described bias electrode, to inhale
Draw plasma bombardment to substrate.
4. the impulse laser deposition system according to claim 1 or 3 it is characterised in that described substrate supporting frame also by
Rotary shaft is connected with whirligig, so that described whirligig drives described bias electrode to rotate.
5. impulse laser deposition system according to claim 1 is it is characterised in that described system also includes temperature control system,
It is controlled for the temperature indoor to described vacuum.
6. impulse laser deposition system according to claim 1 is it is characterised in that described non-equilibrium magnetic pole auxiliary target includes
Target stand and yoke, are provided with described target on described target stand is towards the indoor side of described vacuum, embedded in described target stand
There is at least one pair of magnetic pole symmetrically arranged with respect to described target, to the opposite polarity of magnetic pole and magnetic field intensity is different for this.
7. impulse laser deposition system according to claim 6 is it is characterised in that described non-equilibrium magnetic pole auxiliary target also wraps
Include magnetic conductive board, this magnetic conductive board is divided into the both sides of at least one pair of magnetic pole, and be symmetrical arranged with respect to described target.
8. impulse laser deposition system according to claim 6 is it is characterised in that be provided with positioned at described in described target stand
The cooling pond of generated beneath.
9. a kind of method that deposition film is come using the impulse laser deposition system described in any one in claim 1 to 8, its
It is characterised by, thin film deposition comprises the following steps：
Laser instrument pass through light path system by Laser Focusing to vacuum interior setting target on, with described target produce ablation
Plasma, in the presence of being arranged at the unbalanced magnetic field formed between the pole pair of described target both sides, described ablation etc.
Gas ions ionize further and are evenly distributed to described target material surface；
On the substrate of plasma-deposited to the described generated beneath of described ablation.
10. method according to claim 9 is it is characterised in that methods described also includes：
It is injected separately into reacting gas and working gas in plasma generator, so that described plasma generator is right respectively
Described reacting gas and working gas carry out plasmarized, and it is indoor that the plasma of generation is conveyed to described vacuum；
Described plasma generator produce plasma-deposited on described substrate.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610905668.XA CN106399949A (en) | 2016-10-18 | 2016-10-18 | Pulse laser deposition system and method for depositing thin film with same |
| CN201721304052.3U CN207775343U (en) | 2016-10-18 | 2017-10-11 | Impulse laser deposition system |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201610905668.XA CN106399949A (en) | 2016-10-18 | 2016-10-18 | Pulse laser deposition system and method for depositing thin film with same |
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| CN201721304052.3U Active CN207775343U (en) | 2016-10-18 | 2017-10-11 | Impulse laser deposition system |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106868467A (en) * | 2017-03-02 | 2017-06-20 | 北京航空航天大学 | A kind of ion implanting or injection and depositing system |
| CN107884918A (en) * | 2017-11-13 | 2018-04-06 | 中国科学院合肥物质科学研究院 | High energy ultraviolet laser gatherer under a kind of high-intensity magnetic field |
| CN107937872A (en) * | 2017-11-24 | 2018-04-20 | 广西大学 | Increase impulse laser deposition system and method that active nitrogen auxiliary prepares GaN film |
| WO2019144404A1 (en) * | 2018-01-29 | 2019-08-01 | 中国科学院光电研究院 | Metal additive manufacturing method and device |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113046706A (en) * | 2021-03-19 | 2021-06-29 | 宿迁学院 | Aluminum nanoparticle preparation device, preparation method and application thereof |
| CN115121388A (en) * | 2022-08-09 | 2022-09-30 | 南木纳米科技(北京)有限公司 | Dry-method battery pole piece primary coating machine |
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| CN2415041Y (en) * | 2000-02-01 | 2001-01-17 | 华中理工大学 | Device for pulse laser deposition of large thin film |
| CN1390977A (en) * | 2002-07-20 | 2003-01-15 | 复旦大学 | Process for preparing compound film at ordinary temp |
| WO2012062369A1 (en) * | 2010-11-11 | 2012-05-18 | Nci Swissnanocoat Sa | Apparatus and method for surface processing |
| CN105908147A (en) * | 2016-07-07 | 2016-08-31 | 重庆科技学院 | Non-equilibrium magnetron sputtering electrode and system |
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| CN2415041Y (en) * | 2000-02-01 | 2001-01-17 | 华中理工大学 | Device for pulse laser deposition of large thin film |
| CN1390977A (en) * | 2002-07-20 | 2003-01-15 | 复旦大学 | Process for preparing compound film at ordinary temp |
| WO2012062369A1 (en) * | 2010-11-11 | 2012-05-18 | Nci Swissnanocoat Sa | Apparatus and method for surface processing |
| CN105908147A (en) * | 2016-07-07 | 2016-08-31 | 重庆科技学院 | Non-equilibrium magnetron sputtering electrode and system |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106868467A (en) * | 2017-03-02 | 2017-06-20 | 北京航空航天大学 | A kind of ion implanting or injection and depositing system |
| CN106868467B (en) * | 2017-03-02 | 2019-02-15 | 北京航空航天大学 | A kind of ion implanting or injection and depositing system |
| CN107884918A (en) * | 2017-11-13 | 2018-04-06 | 中国科学院合肥物质科学研究院 | High energy ultraviolet laser gatherer under a kind of high-intensity magnetic field |
| CN107937872A (en) * | 2017-11-24 | 2018-04-20 | 广西大学 | Increase impulse laser deposition system and method that active nitrogen auxiliary prepares GaN film |
| WO2019144404A1 (en) * | 2018-01-29 | 2019-08-01 | 中国科学院光电研究院 | Metal additive manufacturing method and device |
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| Publication number | Publication date |
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| CN207775343U (en) | 2018-08-28 |
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Application publication date: 20170215 |