JPS6318280B2 - - Google Patents
Info
- Publication number
- JPS6318280B2 JPS6318280B2 JP55004060A JP406080A JPS6318280B2 JP S6318280 B2 JPS6318280 B2 JP S6318280B2 JP 55004060 A JP55004060 A JP 55004060A JP 406080 A JP406080 A JP 406080A JP S6318280 B2 JPS6318280 B2 JP S6318280B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- magnetic
- pattern
- planar
- magnetically soft
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004020 conductor Substances 0.000 claims description 96
- 239000007779 soft material Substances 0.000 claims description 87
- 239000011810 insulating material Substances 0.000 claims description 51
- 238000000059 patterning Methods 0.000 claims description 48
- 239000000463 material Substances 0.000 claims description 43
- 238000000034 method Methods 0.000 claims description 43
- 238000004519 manufacturing process Methods 0.000 claims description 36
- 238000000151 deposition Methods 0.000 claims description 18
- 239000002131 composite material Substances 0.000 claims description 17
- 229910000889 permalloy Inorganic materials 0.000 description 81
- 229910052751 metal Inorganic materials 0.000 description 64
- 239000002184 metal Substances 0.000 description 64
- 229920002120 photoresistant polymer Polymers 0.000 description 56
- 239000010408 film Substances 0.000 description 41
- 238000012546 transfer Methods 0.000 description 38
- 230000010076 replication Effects 0.000 description 28
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 26
- WPPDFTBPZNZZRP-UHFFFAOYSA-N aluminum copper Chemical compound [Al].[Cu] WPPDFTBPZNZZRP-UHFFFAOYSA-N 0.000 description 22
- 230000008569 process Effects 0.000 description 21
- 229910000881 Cu alloy Inorganic materials 0.000 description 20
- 239000002223 garnet Substances 0.000 description 17
- 238000003860 storage Methods 0.000 description 17
- 235000012239 silicon dioxide Nutrition 0.000 description 13
- 239000000377 silicon dioxide Substances 0.000 description 13
- 238000012545 processing Methods 0.000 description 11
- 238000002161 passivation Methods 0.000 description 10
- 229910016570 AlCu Inorganic materials 0.000 description 9
- 238000005530 etching Methods 0.000 description 9
- 230000008021 deposition Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 238000001020 plasma etching Methods 0.000 description 7
- 239000000956 alloy Substances 0.000 description 6
- 239000000696 magnetic material Substances 0.000 description 6
- 238000000992 sputter etching Methods 0.000 description 6
- 230000006870 function Effects 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 230000005055 memory storage Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 229910003902 SiCl 4 Inorganic materials 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000001066 destructive effect Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- ZPDRQAVGXHVGTB-UHFFFAOYSA-N gallium;gadolinium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Gd+3] ZPDRQAVGXHVGTB-UHFFFAOYSA-N 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000033001 locomotion Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910015372 FeAl Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- -1 argon ions Chemical class 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/32—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying conductive, insulating or magnetic material on a magnetic film, specially adapted for a thin magnetic film
- H01F41/34—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying conductive, insulating or magnetic material on a magnetic film, specially adapted for a thin magnetic film in patterns, e.g. by lithography
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thin Magnetic Films (AREA)
- Drying Of Semiconductors (AREA)
- Hall/Mr Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/108,888 US4299680A (en) | 1979-12-31 | 1979-12-31 | Method of fabricating magnetic bubble memory device having planar overlay pattern of magnetically soft material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5698773A JPS5698773A (en) | 1981-08-08 |
| JPS6318280B2 true JPS6318280B2 (en, 2012) | 1988-04-18 |
Family
ID=22324643
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP406080A Granted JPS5698773A (en) | 1979-12-31 | 1980-01-17 | Production of magnetic memeory element and magnetic bubble memory |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US4299680A (en, 2012) |
| JP (1) | JPS5698773A (en, 2012) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0240573U (en, 2012) * | 1988-09-07 | 1990-03-20 | ||
| JPH0362874U (en, 2012) * | 1989-10-22 | 1991-06-19 | ||
| JPH0368480U (en, 2012) * | 1989-11-02 | 1991-07-05 |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5925308B2 (ja) * | 1978-04-14 | 1984-06-16 | 株式会社日立製作所 | 磁気バブルメモリ素子及びその製造方法 |
| US4334951A (en) * | 1980-03-12 | 1982-06-15 | Bell Telephone Laboratories, Incorporated | Fabrication technique for the production of devices which depend on magnetic bubbles |
| US4358830A (en) * | 1980-08-25 | 1982-11-09 | National Semiconductor Corporation | Bubble memory with enhanced bit density storage area |
| US4380488A (en) * | 1980-10-14 | 1983-04-19 | Branson International Plasma Corporation | Process and gas mixture for etching aluminum |
| US4373990A (en) * | 1981-01-08 | 1983-02-15 | Bell Telephone Laboratories, Incorporated | Dry etching aluminum |
| US4436579A (en) | 1981-01-29 | 1984-03-13 | Intel Corporation | Method of forming multiplexed magnetic bubble detectors |
| NL8200532A (nl) * | 1982-02-12 | 1983-09-01 | Philips Nv | Reactief ionen etsen van een voorwerp van ferriet. |
| JPS5999370A (ja) * | 1982-11-30 | 1984-06-08 | Copal Co Ltd | 磁気抵抗素子を具える磁気検出器の製造方法 |
| EP0128960B1 (en) * | 1982-12-23 | 1990-04-04 | Sony Corporation | Thermomagnetic optical recording/reproducing method |
| NL8600021A (nl) * | 1986-01-08 | 1987-08-03 | Philips Nv | Werkwijze voor het vervaardigen van een halfgeleiderinrichting waarbij op een halfgeleiderlichaam een metallisatie met een dikke aansluitelektrode wordt aangebracht. |
| US4824521A (en) * | 1987-04-01 | 1989-04-25 | Fairchild Semiconductor Corporation | Planarization of metal pillars on uneven substrates |
| US6073338A (en) * | 1997-08-19 | 2000-06-13 | Read-Rite Corporation | Thin film read head with coplanar pole tips |
| FR2810447B1 (fr) * | 2000-06-16 | 2003-09-05 | Commissariat Energie Atomique | Procede de creation d'un etage de circuit integre ou conexistent des motifs fins et larges |
| JP3828514B2 (ja) * | 2003-06-30 | 2006-10-04 | Ｔｄｋ株式会社 | ドライエッチング方法及び情報記録媒体の製造方法 |
| US10003014B2 (en) * | 2014-06-20 | 2018-06-19 | International Business Machines Corporation | Method of forming an on-pitch self-aligned hard mask for contact to a tunnel junction using ion beam etching |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3957552A (en) * | 1975-03-05 | 1976-05-18 | International Business Machines Corporation | Method for making multilayer devices using only a single critical masking step |
| US4172758A (en) * | 1975-11-07 | 1979-10-30 | Rockwell International Corporation | Magnetic bubble domain device fabrication technique |
| US4098917A (en) * | 1976-09-08 | 1978-07-04 | Texas Instruments Incorporated | Method of providing a patterned metal layer on a substrate employing metal mask and ion milling |
| US4187553A (en) * | 1977-12-23 | 1980-02-05 | International Business Machines Corporation | Pedestal bubble domain chip and processes for making same |
| US4226691A (en) * | 1978-11-24 | 1980-10-07 | National Semiconductor Corporation | Bubble memory process using an aluminum plus water chemical reaction |
-
1979
- 1979-12-31 US US06/108,888 patent/US4299680A/en not_active Expired - Lifetime
-
1980
- 1980-01-17 JP JP406080A patent/JPS5698773A/ja active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0240573U (en, 2012) * | 1988-09-07 | 1990-03-20 | ||
| JPH0362874U (en, 2012) * | 1989-10-22 | 1991-06-19 | ||
| JPH0368480U (en, 2012) * | 1989-11-02 | 1991-07-05 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5698773A (en) | 1981-08-08 |
| US4299680A (en) | 1981-11-10 |
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| JPS6318280B2 (en, 2012) | ||
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