JPS63177043U - - Google Patents
Info
- Publication number
- JPS63177043U JPS63177043U JP1987066675U JP6667587U JPS63177043U JP S63177043 U JPS63177043 U JP S63177043U JP 1987066675 U JP1987066675 U JP 1987066675U JP 6667587 U JP6667587 U JP 6667587U JP S63177043 U JPS63177043 U JP S63177043U
- Authority
- JP
- Japan
- Prior art keywords
- metal foil
- film carrier
- etching
- protruding
- lead
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005530 etching Methods 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims 6
- 229910052751 metal Inorganic materials 0.000 claims 6
- 239000011888 foil Substances 0.000 claims 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 1
- 239000004642 Polyimide Substances 0.000 claims 1
- 239000011889 copper foil Substances 0.000 claims 1
- 229920001721 polyimide Polymers 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/50—Tape automated bonding [TAB] connectors, i.e. film carriers; Manufacturing methods related thereto
Description
第１図は本考案の一実施例である突起電極付フ
イルムキヤリアと、その突起電極付フイルムキヤ
リアを用いて実装する半導体素子とを示す断面図
、第２図は前記突起電極付フイルムキヤリアと半
導体素子との接合状態を示す断面図、第３図は本
考案の他の実施例を示す突起電極付フイルムキヤ
リアと、その突起電極付フイルムキヤリアを用い
て実装する半導体素子とを示す断面図、第４図は
従来のフイルムキヤリアと、そのフイルムキヤリ
アを用いて実装する半導体素子とを示す断面図、
第５図は同じく従来の転写バンプ法による突起電
極付フイルムキヤリアと、その突起電極付フイル
ムキヤリアを用いて実装する半導体素子とを示す
断面図、第６図は同じく従来のハーフエツチング
による突起電極付フイルムキヤリアと、その突起
電極付フイルムキヤリアを用いて実装する半導体
素子とを示す断面図である。
１……可とう性を有する絶縁フイルム、２……
リード、３……接着剤、４……半導体素子、５…
…ボンデイング・パツド、６……バンプ、７……
転写バンプ、８……金蒸着膜、９……バンプ、１
０……突起電極付フイルムキヤリア。
FIG. 1 is a sectional view showing a film carrier with protruding electrodes and a semiconductor element mounted using the film carrier with protruding electrodes, which is an embodiment of the present invention, and FIG. 2 shows the film carrier with protruding electrodes and the semiconductor device. FIG. 3 is a cross-sectional view showing a state of bonding with an element; FIG. 3 is a cross-sectional view showing a film carrier with protruding electrodes according to another embodiment of the present invention; FIG. 4 is a cross-sectional view showing a conventional film carrier and a semiconductor element mounted using the film carrier.
FIG. 5 is a cross-sectional view showing a film carrier with protruding electrodes made by the conventional transfer bump method and a semiconductor element mounted using the film carrier with protruding electrodes, and FIG. 6 is a sectional view showing a film carrier with protruding electrodes made by the conventional half-etching method. FIG. 2 is a sectional view showing a film carrier and a semiconductor element mounted using the film carrier with protruding electrodes. 1...Flexible insulating film, 2...
Lead, 3...Adhesive, 4...Semiconductor element, 5...
...Bonding Pad, 6...Bump, 7...
Transfer bump, 8... Gold vapor deposited film, 9... Bump, 1
0...Film carrier with protruding electrodes.
Claims (1)
を接着し、この金属箔をエツチングして形成され
たリードと、このリードの厚さ方向に前記金属箔
をハーフエツチングして形成された突起電極とを
備え、前記突起電極は、前記金属箔よりも硬度の
低い他の金属よりなる転写バンプを有することを
特徴とする突起電極付フイルムキヤリア。 (2) 前記可とう性を有する絶縁フイルムは、ポ
リイミドよりなる実用新案登録請求の範囲第１項
に記載の突起電極付フイルムキヤリア。 (3) 前記金属箔は、銅箔である実用新案登録請
求の範囲第１項に記載の突起電極付フイルムキヤ
リア。[Claims for Utility Model Registration] (1) A lead formed by bonding a metal foil onto a flexible insulating film and etching the metal foil, and a lead formed by etching the metal foil in the thickness direction of the lead. 1. A film carrier with a protruding electrode, comprising a protruding electrode formed by half-etching, the protruding electrode having a transfer bump made of another metal whose hardness is lower than that of the metal foil. (2) The film carrier with protruding electrodes according to claim 1, wherein the flexible insulating film is made of polyimide. (3) The film carrier with protruding electrodes according to claim 1, wherein the metal foil is a copper foil.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1987066675U JPS63177043U (en) | 1987-05-01 | 1987-05-01 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1987066675U JPS63177043U (en) | 1987-05-01 | 1987-05-01 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63177043U true JPS63177043U (en) | 1988-11-16 |
Family
ID=30904903
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1987066675U Pending JPS63177043U (en) | 1987-05-01 | 1987-05-01 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63177043U (en) |
-
1987
- 1987-05-01 JP JP1987066675U patent/JPS63177043U/ja active Pending
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