JPS63170917A - 微細パタ−ンの形成方法 - Google Patents

微細パタ−ンの形成方法

Info

Publication number
JPS63170917A
JPS63170917A JP62002776A JP277687A JPS63170917A JP S63170917 A JPS63170917 A JP S63170917A JP 62002776 A JP62002776 A JP 62002776A JP 277687 A JP277687 A JP 277687A JP S63170917 A JPS63170917 A JP S63170917A
Authority
JP
Japan
Prior art keywords
pattern
period
layer
mask
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62002776A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0567049B2 (enrdf_load_stackoverflow
Inventor
Takeshi Ofuji
武 大藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62002776A priority Critical patent/JPS63170917A/ja
Publication of JPS63170917A publication Critical patent/JPS63170917A/ja
Publication of JPH0567049B2 publication Critical patent/JPH0567049B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP62002776A 1987-01-09 1987-01-09 微細パタ−ンの形成方法 Granted JPS63170917A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62002776A JPS63170917A (ja) 1987-01-09 1987-01-09 微細パタ−ンの形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62002776A JPS63170917A (ja) 1987-01-09 1987-01-09 微細パタ−ンの形成方法

Publications (2)

Publication Number Publication Date
JPS63170917A true JPS63170917A (ja) 1988-07-14
JPH0567049B2 JPH0567049B2 (enrdf_load_stackoverflow) 1993-09-24

Family

ID=11538742

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62002776A Granted JPS63170917A (ja) 1987-01-09 1987-01-09 微細パタ−ンの形成方法

Country Status (1)

Country Link
JP (1) JPS63170917A (enrdf_load_stackoverflow)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08190203A (ja) * 1994-07-14 1996-07-23 Hyundai Electron Ind Co Ltd レジスト パターン形成方法
JP2002075857A (ja) * 2000-06-14 2002-03-15 Tokyo Denki Univ レジストパタン形成方法
JP2002134394A (ja) * 2000-10-25 2002-05-10 Mitsubishi Materials Corp 多重露光方法及び多重露光装置
WO2008038602A1 (fr) * 2006-09-29 2008-04-03 Tokyo Ohka Kogyo Co., Ltd. Procédé de formation d'un motif
WO2008041468A1 (fr) * 2006-09-29 2008-04-10 Tokyo Ohka Kogyo Co., Ltd. Procédé de formation d'un motif
JP2008257170A (ja) * 2007-03-13 2008-10-23 Matsushita Electric Ind Co Ltd パターン形成方法
JP2009110986A (ja) * 2007-10-26 2009-05-21 Tokyo Electron Ltd エッチングマスクの形成方法、制御プログラム及びプログラム記憶媒体
JP2009265505A (ja) * 2008-04-28 2009-11-12 Jsr Corp パターン形成方法及び微細パターン形成用樹脂組成物
JP2010509783A (ja) * 2006-11-14 2010-03-25 エヌエックスピー ビー ヴィ フィーチャ空間集積度を高めるリソグラフィのためのダブルパターニング方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55138839A (en) * 1979-04-17 1980-10-30 Nec Kyushu Ltd Method of fabricating semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55138839A (en) * 1979-04-17 1980-10-30 Nec Kyushu Ltd Method of fabricating semiconductor device

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08190203A (ja) * 1994-07-14 1996-07-23 Hyundai Electron Ind Co Ltd レジスト パターン形成方法
US5989788A (en) * 1994-07-14 1999-11-23 Hyundai Electronics Industries Co., Ltd. Method for forming resist patterns having two photoresist layers and an intermediate layer
JP2002075857A (ja) * 2000-06-14 2002-03-15 Tokyo Denki Univ レジストパタン形成方法
JP2002134394A (ja) * 2000-10-25 2002-05-10 Mitsubishi Materials Corp 多重露光方法及び多重露光装置
JP2008089710A (ja) * 2006-09-29 2008-04-17 Tokyo Ohka Kogyo Co Ltd パターン形成方法
WO2008041468A1 (fr) * 2006-09-29 2008-04-10 Tokyo Ohka Kogyo Co., Ltd. Procédé de formation d'un motif
WO2008038602A1 (fr) * 2006-09-29 2008-04-03 Tokyo Ohka Kogyo Co., Ltd. Procédé de formation d'un motif
JP2008089711A (ja) * 2006-09-29 2008-04-17 Tokyo Ohka Kogyo Co Ltd パターン形成方法
US8178284B2 (en) 2006-09-29 2012-05-15 Tokyo Ohka Kogyo Co., Ltd. Method of forming pattern
JP2010509783A (ja) * 2006-11-14 2010-03-25 エヌエックスピー ビー ヴィ フィーチャ空間集積度を高めるリソグラフィのためのダブルパターニング方法
US8148052B2 (en) 2006-11-14 2012-04-03 Nxp B.V. Double patterning for lithography to increase feature spatial density
JP2008257170A (ja) * 2007-03-13 2008-10-23 Matsushita Electric Ind Co Ltd パターン形成方法
JP2009110986A (ja) * 2007-10-26 2009-05-21 Tokyo Electron Ltd エッチングマスクの形成方法、制御プログラム及びプログラム記憶媒体
US8198183B2 (en) 2007-10-26 2012-06-12 Tokyo Electron Limited Forming method of etching mask, control program and program storage medium
JP2009265505A (ja) * 2008-04-28 2009-11-12 Jsr Corp パターン形成方法及び微細パターン形成用樹脂組成物

Also Published As

Publication number Publication date
JPH0567049B2 (enrdf_load_stackoverflow) 1993-09-24

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