JPS63167753U - - Google Patents

Info

Publication number
JPS63167753U
JPS63167753U JP5931287U JP5931287U JPS63167753U JP S63167753 U JPS63167753 U JP S63167753U JP 5931287 U JP5931287 U JP 5931287U JP 5931287 U JP5931287 U JP 5931287U JP S63167753 U JPS63167753 U JP S63167753U
Authority
JP
Japan
Prior art keywords
wiring
grounding
pad
power supply
power
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5931287U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP5931287U priority Critical patent/JPS63167753U/ja
Publication of JPS63167753U publication Critical patent/JPS63167753U/ja
Pending legal-status Critical Current

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Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Description

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本考案の一実施例を説明するためのG
aAsMESFETを用いた集積回路の平面図で
、第1図aはチツプ全体の概略図、第1図bは同
図a中のAで示した部分の部分拡大図である。 1……チツプ、21……接地配線パツド、22
……第一ソース電源パツド、23……第二ソース
電源パツド、24……電圧モニタパツド、31…
…接地母配線、32……第一ソース電源母配線、
33……第二ソース電源母配線、34……電圧モ
ニタ用配線、41,42,43,44……MES
FET、51……シヨツトキ障壁型ダイオード。
FIG. 1 is a diagram for explaining one embodiment of the present invention.
FIG. 1A is a schematic diagram of the entire chip, and FIG. 1B is a partially enlarged view of the portion indicated by A in FIG. 1A. 1... Chip, 21... Ground wiring pad, 22
...First source power pad, 23...Second source power pad, 24...Voltage monitor pad, 31...
...Ground bus wiring, 32...First source power supply wiring,
33...Second source power supply bus wiring, 34...Voltage monitor wiring, 41, 42, 43, 44...MES
FET, 51...Shotki barrier diode.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 電源パツドより電源母配線および電源配線を経
て給電が行なわれ、又は接地パツドより接地母配
線および接地配線を経て接地が行なわれた半導体
集積回路に於て、該電源用配線系又は接地用配線
系の少なくとも一方の配線系の配線電位をモニタ
するための配線の一端が該配線系の配線に接続さ
れ、モニタするための配線の他端が電圧モニタパ
ツドに引き出されて成ることを特徴とする半導体
集積回路。
In a semiconductor integrated circuit where power is supplied from a power pad through a power supply wiring and power supply wiring, or where grounding is performed from a grounding pad through a grounding wiring and a grounding wiring, the power supply wiring system or the grounding wiring system A semiconductor integrated circuit characterized in that one end of a wiring for monitoring the wiring potential of at least one wiring system is connected to the wiring of the wiring system, and the other end of the wiring for monitoring is drawn out to a voltage monitor pad. circuit.
JP5931287U 1987-04-21 1987-04-21 Pending JPS63167753U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5931287U JPS63167753U (en) 1987-04-21 1987-04-21

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5931287U JPS63167753U (en) 1987-04-21 1987-04-21

Publications (1)

Publication Number Publication Date
JPS63167753U true JPS63167753U (en) 1988-11-01

Family

ID=30890687

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5931287U Pending JPS63167753U (en) 1987-04-21 1987-04-21

Country Status (1)

Country Link
JP (1) JPS63167753U (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56126932A (en) * 1980-03-12 1981-10-05 Hitachi Ltd Analysis of defect

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56126932A (en) * 1980-03-12 1981-10-05 Hitachi Ltd Analysis of defect

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