JPH0252332U - - Google Patents

Info

Publication number
JPH0252332U
JPH0252332U JP13031088U JP13031088U JPH0252332U JP H0252332 U JPH0252332 U JP H0252332U JP 13031088 U JP13031088 U JP 13031088U JP 13031088 U JP13031088 U JP 13031088U JP H0252332 U JPH0252332 U JP H0252332U
Authority
JP
Japan
Prior art keywords
wiring
power
semiconductor device
slit
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13031088U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP13031088U priority Critical patent/JPH0252332U/ja
Publication of JPH0252332U publication Critical patent/JPH0252332U/ja
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)

Description

【図面の簡単な説明】[Brief explanation of drawings]

第1図は、本考案である半導体装置の配線例を
示した図。第2図は、従来の半導体装置の配線例
を示した図。 1,11……半導体装置、2,14……電源配
線、4,13……トランジスタ間をつなぐ配線、
5,12……半導体装置を電位固定するために電
源配線を特に太くした部分、3……スリツト。
FIG. 1 is a diagram showing an example of wiring of a semiconductor device according to the present invention. FIG. 2 is a diagram showing an example of wiring of a conventional semiconductor device. 1, 11... Semiconductor device, 2, 14... Power wiring, 4, 13... Wiring connecting transistors,
5, 12... Part where the power supply wiring is particularly thick to fix the potential of the semiconductor device, 3... Slit.

Claims (1)

【実用新案登録請求の範囲】 トランジスタ間をつなぐ配線Aと各トランジス
タに電源を与える電源用配線Bを有する半導体装
置において、 (a) 該配線Aより電源用配線Bの幅を太くし、 (b) 該電源用配線Bにスリツトをもたせて配線
領域を構成したことを特徴とする半導体装置。
[Scope of Claim for Utility Model Registration] In a semiconductor device having a wiring A that connects transistors and a power wiring B that supplies power to each transistor, (a) the width of the power wiring B is made wider than that of the wiring A, and (b ) A semiconductor device characterized in that the power supply wiring B has a slit to form a wiring region.
JP13031088U 1988-10-04 1988-10-04 Pending JPH0252332U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13031088U JPH0252332U (en) 1988-10-04 1988-10-04

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13031088U JPH0252332U (en) 1988-10-04 1988-10-04

Publications (1)

Publication Number Publication Date
JPH0252332U true JPH0252332U (en) 1990-04-16

Family

ID=31385365

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13031088U Pending JPH0252332U (en) 1988-10-04 1988-10-04

Country Status (1)

Country Link
JP (1) JPH0252332U (en)

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