JPS6327062U - - Google Patents
Info
- Publication number
- JPS6327062U JPS6327062U JP12066786U JP12066786U JPS6327062U JP S6327062 U JPS6327062 U JP S6327062U JP 12066786 U JP12066786 U JP 12066786U JP 12066786 U JP12066786 U JP 12066786U JP S6327062 U JPS6327062 U JP S6327062U
- Authority
- JP
- Japan
- Prior art keywords
- mos transistor
- apply
- semiconductor substrate
- power source
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 6
- 238000010586 diagram Methods 0.000 description 3
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Non-Volatile Memory (AREA)
Description
第１図はこの考案に係る半導体装置の一例を示
す構成図、第２図はエピタキシヤル基板を用いて
ＣＭＯＳ回路を形成したメモリの構造断面図、第
３図は従来の半導体装置の半導体基板に電位を与
える手段を示す図である。
１……半導体基板、８……第１のＭＯＳトラン
ジスタ、９……電源、１０……第２のＭＯＳトラ
ンジスタ。なお、図中、同一符号は同一もしくは
相当部分を示す。
Figure 1 is a configuration diagram showing an example of a semiconductor device according to this invention, Figure 2 is a cross-sectional view of the structure of a memory in which a CMOS circuit is formed using an epitaxial substrate, and Figure 3 is a diagram showing a semiconductor substrate of a conventional semiconductor device. FIG. 3 is a diagram showing means for applying a potential. DESCRIPTION OF SYMBOLS 1... Semiconductor substrate, 8... First MOS transistor, 9... Power supply, 10... Second MOS transistor. In addition, in the figures, the same reference numerals indicate the same or corresponding parts.
Claims (1)
ために電源と上記基板との間に接続された第１の
ＭＯＳトランジスタと、上記第１のＭＯＳトラン
ジスタと電源との間に介挿されて電源電圧をほぼ
そのまま第１のＭＯＳトランジスタ側に供与する
第２のＭＯＳトランジスタとを具備した半導体装
置。 a semiconductor substrate; a first MOS transistor connected between a power source and the substrate to apply a potential to the semiconductor substrate; and a first MOS transistor inserted between the first MOS transistor and the power source to apply a power supply voltage. A semiconductor device comprising a second MOS transistor that supplies power to the first MOS transistor side almost as is.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12066786U JPS6327062U (en) | 1986-08-05 | 1986-08-05 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12066786U JPS6327062U (en) | 1986-08-05 | 1986-08-05 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6327062U true JPS6327062U (en) | 1988-02-22 |
Family
ID=31009201
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12066786U Pending JPS6327062U (en) | 1986-08-05 | 1986-08-05 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6327062U (en) |
-
1986
- 1986-08-05 JP JP12066786U patent/JPS6327062U/ja active Pending