JPS63164242A - Semiconductor device and manufacture thereof - Google Patents
Semiconductor device and manufacture thereofInfo
- Publication number
- JPS63164242A JPS63164242A JP30815886A JP30815886A JPS63164242A JP S63164242 A JPS63164242 A JP S63164242A JP 30815886 A JP30815886 A JP 30815886A JP 30815886 A JP30815886 A JP 30815886A JP S63164242 A JPS63164242 A JP S63164242A
- Authority
- JP
- Japan
- Prior art keywords
- film
- tungsten
- oxygen
- tin
- silicide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 10
- 238000004519 manufacturing process Methods 0.000 title description 4
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 9
- 229910052751 metal Inorganic materials 0.000 claims abstract description 8
- 239000002184 metal Substances 0.000 claims abstract description 8
- 150000004767 nitrides Chemical class 0.000 claims abstract description 8
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910021480 group 4 element Inorganic materials 0.000 claims abstract description 6
- 230000000737 periodic effect Effects 0.000 claims abstract description 5
- 238000002844 melting Methods 0.000 claims description 9
- 230000008018 melting Effects 0.000 claims description 7
- 229910052721 tungsten Inorganic materials 0.000 abstract description 37
- 239000010937 tungsten Substances 0.000 abstract description 36
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract description 35
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 20
- 239000001301 oxygen Substances 0.000 abstract description 20
- 229910052760 oxygen Inorganic materials 0.000 abstract description 20
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract description 15
- 238000000137 annealing Methods 0.000 abstract description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052710 silicon Inorganic materials 0.000 abstract description 6
- 239000010703 silicon Substances 0.000 abstract description 6
- 238000004544 sputter deposition Methods 0.000 abstract description 5
- 229910052681 coesite Inorganic materials 0.000 abstract description 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 3
- 239000007789 gas Substances 0.000 abstract description 3
- 238000005247 gettering Methods 0.000 abstract description 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 3
- 239000000377 silicon dioxide Substances 0.000 abstract description 3
- 229910052682 stishovite Inorganic materials 0.000 abstract description 3
- 229910052905 tridymite Inorganic materials 0.000 abstract description 3
- QVGXLLKOCUKJST-BJUDXGSMSA-N oxygen-15 atom Chemical compound [15O] QVGXLLKOCUKJST-BJUDXGSMSA-N 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 36
- 239000010409 thin film Substances 0.000 description 9
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 229910052750 molybdenum Inorganic materials 0.000 description 5
- 239000011733 molybdenum Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 210000003484 anatomy Anatomy 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 150000003657 tungsten Chemical class 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
【発明の詳細な説明】
半導体装置の電極配線として用いるタングステン（Ｗ）
またはモリブデン（ＭＯ）薄膜の特性の改善のため、元
素周期表ＩＶ族のチタン（Ｔｉ） 、ジルコニウム（Ｚ
ｒ）、ハフニウム（Ｈｆ）などの炭化物、窒化物、硼化
物などを電極配線薄膜の上に蒸着し、電極配線薄膜中の
酸素をアニールにより前記■族元素に吸収させて電極配
線薄膜中の酸素濃度を低減し、同薄膜の低抵抗化を図り
信頼性を向上する。[Detailed description of the invention] Tungsten (W) used as electrode wiring of semiconductor devices
Alternatively, to improve the properties of molybdenum (MO) thin films, titanium (Ti) and zirconium (Z
r) Carbide, nitride, boride, etc. such as hafnium (Hf) is vapor-deposited on the electrode wiring thin film, and the oxygen in the electrode wiring thin film is absorbed by the group Ⅰ element by annealing to remove the oxygen in the electrode wiring thin film. By reducing the concentration, the resistance of the thin film will be lowered and its reliability will be improved.
本発明は半導体装置およびその製造方法に関し、特に、
タングステン、モリブデンの如き高融点金属を用いる抵
抗を低下させ信頼性を向上させた電極配線薄膜とその製
造方法に関する。The present invention relates to a semiconductor device and a method for manufacturing the same, and in particular,
The present invention relates to an electrode wiring thin film that uses high-melting point metals such as tungsten and molybdenum to lower resistance and improve reliability, and a method for manufacturing the same.
半導体装置、特にＬＳＩにおいて電極配線として高融点
金ｊｉｉ （Ｗ、 ＭＯなど）またはそのシリサイド（
ケイ化物）が用いられるようになってきている。High melting point gold (W, MO, etc.) or its silicide (
silicides) have come to be used.
その理由は、これらの材料は、高温に耐え、二酸化シリ
コン（５ｉ０２）の絶縁膜と密着性が良く、高温酸化性
雰囲気中で安定した保護膜ができ、イオン打込みに対し
てマスクとなり、制御パターン形成が容易になされ、シ
リコン基板とのオーミ・ツク性とステンプカバレッジが
良い、などの特性をもっているからである。The reason is that these materials can withstand high temperatures, have good adhesion to the silicon dioxide (5i02) insulating film, form a stable protective film in high-temperature oxidizing atmospheres, act as a mask for ion implantation, and can be used as a control pattern. This is because it is easy to form and has characteristics such as good ohmic contact with the silicon substrate and good stamp coverage.
高融点金属材料で電極配線を形成するには、アルゴンな
どのガスで同金冗材料のターゲットから全屈粒子をたた
き出すスバ・ツタ方が用いられている。第２図には、シ
リコン基板２１上の酸化膜（Ｓｉ０２膜）２２の上にス
パッタで堆積したタングステンＩＩＱ２３が示されてい
る。このタングステン膜２３をパターニングして所望の
電極配線を形成するのである。To form electrode wiring using a high-melting point metal material, the Suba-Tsuta method is used, in which a gas such as argon is used to knock out the totally curved particles from a target made of the same metal material. FIG. 2 shows tungsten IIQ 23 deposited on an oxide film (Si02 film) 22 on a silicon substrate 21 by sputtering. This tungsten film 23 is patterned to form desired electrode wiring.
スパッタで高融点金属例えばタングステンの電極配線を
形成するときに、タングステン中に含まれる酸素（０２
） 、窒素（Ｎ２）など、の不純物がタングステン粒子
に取り込まれつつタングステンＳ膜が形成される。配線
用薄膜例えば第２図に示したタングステン膜２３に同図
に符号２４を付して模式的に示す酸素が混入すると、同
薄膜の電気的抵抗を増大させることは知られている。When forming electrode wiring of a high melting point metal such as tungsten by sputtering, oxygen (02
), nitrogen (N2), and other impurities are incorporated into tungsten particles to form a tungsten S film. It is known that when a wiring thin film, for example, the tungsten film 23 shown in FIG. 2, is mixed with oxygen, which is schematically shown with reference numeral 24 in the figure, the electrical resistance of the thin film increases.
他方、例えばタングステンのインゴットからバルクを切
り出しこのバルクで作った構造物において、タングステ
ン中に酸素が３０ｐｐｍ程度含まれるとタングステンの
機械的強度が低下しくもろくなり）、その構造物が破壊
することも知られている。On the other hand, it is also known that, for example, in a structure made by cutting a bulk from a tungsten ingot, if the tungsten contains about 30 ppm of oxygen, the mechanical strength of the tungsten decreases and becomes brittle, causing the structure to break. It is being
従って、タングステン薄膜で電極配線を形成したときに
、タングステン中に酸素が含まれると電極配線の強度が
低下し、断線などのおそれがあり、それはタングステン
電極配線を用いた半導体装置の信頼性を低下させること
になる。Therefore, when electrode wiring is formed using a tungsten thin film, if oxygen is included in the tungsten, the strength of the electrode wiring decreases and there is a risk of disconnection, which reduces the reliability of semiconductor devices using tungsten electrode wiring. I will let you do it.
本発明はこのような点に鑑みて創作されたもので、酸素
の含まれない高融点金属またはそのシリサイドの電極配
線とそれの製造方法を提供することを目的とする。The present invention was created in view of these points, and an object of the present invention is to provide an electrode wiring made of a high melting point metal or its silicide that does not contain oxygen, and a method for manufacturing the same.
第１図（ａ）と（ｂ）は本発明実施例断面図で、図中、
１１は下地であるシリコン基板、１２は絶縁膜（ＳｉＯ
２膜）、１３は高融点金Ｍ膜例えばタングステン膜、１
４は元素周期表■族の窒化物膜、例えばＴｉＮ膜である
。FIGS. 1(a) and 1(b) are cross-sectional views of an embodiment of the present invention, in which
11 is a silicon substrate as a base, 12 is an insulating film (SiO
2 film), 13 is a high melting point gold M film, for example a tungsten film, 1
4 is a nitride film of group (1) of the periodic table, for example, a TiN film.
本発明実施例においては、スパッタ法で形成したタング
ステン膜１３の上にＴｉＮ膜１４が設けられ、それに９
００℃のアニールと１０００℃のアニールが施される。In the embodiment of the present invention, a TiN film 14 is provided on a tungsten film 13 formed by sputtering, and
Annealing at 00°C and 1000°C is performed.
’ｒ ｉ Ｎはタングステンに比べて酸素をゲッタリン
グする性質が著しく高い。そこで、第１図に示した措造
に対しアニールが施されると、タングステン中の酸素が
ＴｉＮ中にゲッタリングされ、タングステン膜中の酸素
が除かれるのである。'r i N has a significantly higher oxygen gettering property than tungsten. Therefore, when the structure shown in FIG. 1 is annealed, the oxygen in the tungsten is gettered into the TiN, and the oxygen in the tungsten film is removed.
以下、図面を参照して本発明の実施例を詳細に説明する
。Embodiments of the present invention will be described in detail below with reference to the drawings.
第１図（ａｌを参照すると、半導体基板、例えばシリコ
ン基板（Ｓ＋基板）１１上に形成された５ｉ０２膜１２
上に、知られたスパッタ装置を用いてタングステン膜１
３、ＴｉＮ膜１４をそれぞれ１０００人の膜厚に堆積す
る。このとき、ターゲット中に含まれていた酸素が取り
込まれて、タングステン膜１３およびＴｉＮ膜１膜中４
中に模式的に符号１５を付して示す酸素（０２）が存在
する。タングステン膜１３中の酸素１５は、前記した如
く電極配線として用いられると、抵抗を上昇させ、また
配線それ自体の切断などの原因となるものである。Referring to FIG. 1 (al), a 5i02 film 12 formed on a semiconductor substrate, for example, a silicon substrate (S+ substrate) 11
A tungsten film 1 is deposited on top using a known sputtering device.
3. Deposit each TiN film 14 to a thickness of 1,000 layers. At this time, oxygen contained in the target is taken in, and 4 in the tungsten film 13 and the TiN film 1
Oxygen (02), shown schematically with reference numeral 15, is present therein. When the oxygen 15 in the tungsten film 13 is used as an electrode wiring as described above, it increases the resistance and causes the wiring itself to break.
本発明においては、通常のアニール炉中で、Ｎ２ガスを
用い、減圧状態で、９００″Ｃで３０分、引続き１００
０℃で３０分アニールした。ＩＶ族元素、第１図の例で
はＴｉＮ膜が酸素をゲッタリングする性質は、タングス
テンに比べてはるかに強いものであるので、かかるアニ
ールによって、タングステン膜１３中の酸素は、第１図
ｆｂ）に模式的に示す如（ＴｉＮ膜１膜中４中ッタリン
グされる（取り込められる）。In the present invention, in a normal annealing furnace, N2 gas is used under reduced pressure at 900"C for 30 minutes, followed by 100"C.
Annealing was performed at 0°C for 30 minutes. Group IV elements, in the example shown in FIG. 1, the TiN film has a much stronger ability to getter oxygen than tungsten, so by such annealing, the oxygen in the tungsten film 13 is As schematically shown in FIG.
なお同図において、タングステン膜１３中の点線の円は
そこにあった酸素が移動したことを模式的に示す。In addition, in the figure, the dotted circle in the tungsten film 13 schematically shows that the oxygen that was there has moved.
その結果得られたＴｉＮ ／ Ｗ／ ５ｉ０２／ Ｓｔ
基板のシート抵抗を、第２図に示した５ｉ０２膜上に直
接タングステン膜を堆積した場合のＷ／ ５ｉ０２／Ｓ
ｉ基板のシート抵抗と比較したところ、下記に示す如き
結果が得られた。The resulting TiN/W/5i02/St
The sheet resistance of the substrate is W/5i02/S when a tungsten film is deposited directly on the 5i02 film shown in Figure 2.
When compared with the sheet resistance of the i-substrate, the following results were obtained.
堆積直後 ９００℃ １１００℃
（３０分）（３０分）
Ｗ／５ｉ０２／Ｓｉ基板 １．４４ １，３４
１．２５ＴｉＮ／Ｗ／ ＳｉＯ２／Ｓｉ基板 １．
３０ ０．９１ ０．６７シート抵抗単位：Ω／
口
この表から、９００℃３０分、 １０００℃ ３０分の
アニールを終った後におけるＴｉＮ ／Ｗ／ ５ｉ０２
／Ｓｉ基板のシート抵抗は堆積直後における値のほぼ半
分であることが実証された。Immediately after deposition 900℃ 1100℃ (30 minutes) (30 minutes) W/5i02/Si substrate 1.44 1,34
1.25TiN/W/SiO2/Si substrate 1.
30 0.91 0.67 Sheet resistance unit: Ω/
From this table, TiN /W/ 5i02 after annealing at 900°C for 30 minutes and 1000°C for 30 minutes.
The sheet resistance of the /Si substrate was demonstrated to be approximately half of its value immediately after deposition.
ＬＳＩの電極配線形成においては、前記したアニールが
終った後に、ＴｉＮ膜１４を除去しなければならない。In forming electrode wiring for LSI, the TiN film 14 must be removed after the above-described annealing is completed.
そこで本発明の方法においては、硝酸（１０）十過酸化
水素水（１）のエッチャントを９０℃に保ってＴｉＮ膜
１４をエツチングしてタングステン膜１３を表出した。Therefore, in the method of the present invention, the tungsten film 13 was exposed by etching the TiN film 14 while keeping the etchant of nitric acid (10) dehydrogen peroxide solution (1) at 90°C.
かかるウェットエツチングに代えてプラズマを用いるド
ライエツチングによってＴｉＮＩＩＱＧエツチングして
もよい。Instead of such wet etching, TiNIIQG etching may be performed by dry etching using plasma.
なお、以上はタングステンを例に説明したが、タングス
テンに換えモリブデンなどその他の高融点全屈およびそ
のシリサイドも使用可能であり、酸素のゲッタリング用
の材料としては、ＴｉＮ膜以外に他のｔＶ族元素および
その窒化物、炭化物、硼化物も使用可能である。Although the above explanation uses tungsten as an example, it is also possible to use other high melting point materials such as molybdenum and their silicides in place of tungsten, and other tV group materials other than TiN films can be used as oxygen gettering materials. Elements and their nitrides, carbides, and borides can also be used.
以上述べてきたように本発明によれば、タングステン膜
中の酸素がゲッタリングされ、タングステン膜の抵抗が
大幅に低減したことが実証され、更には本発明実施例を
用いる電極配線の機械的強度も高められるので、かかる
配線を組み込んだＬＳＩ素子などの信頼性を高める効果
がある。As described above, according to the present invention, it has been demonstrated that oxygen in the tungsten film is gettered and the resistance of the tungsten film is significantly reduced. This has the effect of increasing the reliability of LSI devices incorporating such wiring.
第１図（ＩＩ）と（ｂ）は本発明実施例断面図、第２図
は従来例断面図である。
第１図において、
１１はシリコン基板、
１２は ５ｉＯｚ膜、
工３はタングステン膜、
Ｉ４はＴｉＮ膜である。
代理人 弁理士 久木元 彰
復代理人 弁理士 大 菅 義 之
、ＬＪ陵シ情ゆミ１喝ヒ１チリｄツｒｆｎＥ糖１ ヱ
従東剖ＩＬｆｒω目
第２図FIGS. 1(II) and (b) are sectional views of an embodiment of the present invention, and FIG. 2 is a sectional view of a conventional example. In FIG. 1, 11 is a silicon substrate, 12 is a 5iOz film, 3 is a tungsten film, and I4 is a TiN film. Agent: Moto Kuki, Attorney: Yoshiyuki Osuga, Attorney: Yoshiyuki Osuga, LJ Ryōshijo Yumi 1 Cheer Hi 1 Chiri d Tsu rfnE Sugar 1 ヱJouto Anatomy ILfrω Eyes Figure 2
Claims (2)
リサイドの膜（１３）および元素周期表IV族元素または
その窒化物、炭化物もしくは硼化物の膜（１４）が設け
られてなることを特徴とする半導体装置。(1) A film (13) of a high melting point metal or its silicide and a film (14) of a group IV element of the periodic table or its nitride, carbide or boride are provided on the semiconductor substrate (11). semiconductor device.
リサイドの膜（１３）および元素周期表IV族元素または
その窒化物、炭化物もしくは硼化物の膜（１４）を形成
する工程、前記した膜（１３、１４）をアニールする工
程、および前記IV族元素またはその窒化物、炭化物もし
くは硼化物の膜（１４）を除去する工程を含むことを特
徴とする半導体装置の製造方法。(2) A step of forming a film (13) of a high melting point metal or its silicide and a film (14) of a group IV element of the periodic table or its nitride, carbide or boride on the semiconductor substrate (11), the above-mentioned film (13, 14); and removing the film (14) of the group IV element or its nitride, carbide, or boride.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30815886A JPS63164242A (en) | 1986-12-26 | 1986-12-26 | Semiconductor device and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30815886A JPS63164242A (en) | 1986-12-26 | 1986-12-26 | Semiconductor device and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63164242A true JPS63164242A (en) | 1988-07-07 |
Family
ID=17977595
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP30815886A Pending JPS63164242A (en) | 1986-12-26 | 1986-12-26 | Semiconductor device and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63164242A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100396692B1 (en) * | 1999-06-16 | 2003-09-02 | 주식회사 하이닉스반도체 | Method for Manufacturing of Semiconductor device |
| JP2008205329A (en) * | 2007-02-22 | 2008-09-04 | Nichia Chem Ind Ltd | Semiconductor device |
-
1986
- 1986-12-26 JP JP30815886A patent/JPS63164242A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100396692B1 (en) * | 1999-06-16 | 2003-09-02 | 주식회사 하이닉스반도체 | Method for Manufacturing of Semiconductor device |
| JP2008205329A (en) * | 2007-02-22 | 2008-09-04 | Nichia Chem Ind Ltd | Semiconductor device |
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