JPH0244701A - Thin film resistor and manufacture thereof - Google Patents
Thin film resistor and manufacture thereofInfo
- Publication number
- JPH0244701A JPH0244701A JP63194470A JP19447088A JPH0244701A JP H0244701 A JPH0244701 A JP H0244701A JP 63194470 A JP63194470 A JP 63194470A JP 19447088 A JP19447088 A JP 19447088A JP H0244701 A JPH0244701 A JP H0244701A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- resistor
- film resistor
- resistance value
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 45
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 238000000137 annealing Methods 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims abstract description 11
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 9
- 239000010937 tungsten Substances 0.000 claims abstract description 9
- -1 tungsten nitride Chemical class 0.000 claims abstract description 9
- 238000005546 reactive sputtering Methods 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 4
- 239000012298 atmosphere Substances 0.000 claims description 2
- 239000007789 gas Substances 0.000 claims description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- 229910052786 argon Inorganic materials 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 239000010408 film Substances 0.000 abstract description 32
- 238000009966 trimming Methods 0.000 abstract description 6
- 239000000758 substrate Substances 0.000 abstract description 5
- 230000001681 protective effect Effects 0.000 abstract description 4
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 229910021332 silicide Inorganic materials 0.000 abstract description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 2
- IVHJCRXBQPGLOV-UHFFFAOYSA-N azanylidynetungsten Chemical compound [W]#N IVHJCRXBQPGLOV-UHFFFAOYSA-N 0.000 abstract description 2
- 150000004767 nitrides Chemical class 0.000 abstract description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 238000004380 ashing Methods 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910018503 SF6 Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 1
- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
この発明は、ＩＣ上に搭載される薄膜抵抗器およびその
製造方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a thin film resistor mounted on an IC and a method for manufacturing the same.
（従来の技術）
薄膜抵抗器は安定性や温度特性の優れた抵抗器であり、
従来、ＮｉＣｒ 、 ５ｉＣｒ 、 Ｔａ 、 ＳｎＯ
２などで形成されている。この薄膜抵抗器において、抵
抗値のトリミングには、従来、レーザ・トリミングが広
く用いられている。レーザ・トリミングとは、例えば米
山寿−ｒ Ａ／Ｄコンバータ入門」オーム社Ｐ１６５に
開示されるように、抵抗の一部を焼損して抵抗値をトリ
ピングする方法である。(Conventional technology) Thin film resistors are resistors with excellent stability and temperature characteristics.
Conventionally, NiCr, 5iCr, Ta, SnO
It is formed by 2 etc. Conventionally, laser trimming has been widely used to trim the resistance value of this thin film resistor. Laser trimming is a method of tripping the resistance value by burning out a part of the resistor, as disclosed, for example, in Toshi Yoneyama's "Introduction to A/D Converters" Ohmsha P165.
（発明が解決しようとする課題）
しかるに、レーザ・トリミング法は高価であり、ＩＣ製
造におけろコストを上げるという問題点があった。(Problems to be Solved by the Invention) However, the laser trimming method is expensive and has the problem of increasing costs in IC manufacturing.
この発明は、簡便かつ安価なトリミング法とし得る４膜
抵抗器およびその製造方法を提供することを目的とする
。An object of the present invention is to provide a four-film resistor that can be trimmed simply and inexpensively, and a method for manufacturing the same.
（課題を解決するための手段）
この発明では、窒化タングステン薄膜により薄膜抵抗器
を形成する。また、トリミングは、アニールにより行う
。(Means for Solving the Problems) In the present invention, a thin film resistor is formed from a tungsten nitride thin film. Further, trimming is performed by annealing.
（作 用）
上述のように、薄膜抵抗器を窒化タングステン薄膜で形
成した場合は、次にアニールし、その濃度および時間を
＊Ｊ御する乙とにより、薄膜抵抗器の抵抗値が調整され
る。(Function) As mentioned above, when a thin film resistor is formed from a tungsten nitride thin film, it is then annealed and the resistance value of the thin film resistor is adjusted by controlling the concentration and time. .
（実 施 例） 以下この発明の一実施例を図面を参照して説明する。(Example) An embodiment of the present invention will be described below with reference to the drawings.
第１図はこの発明の一実施例の薄膜抵抗器をＩＣ上に搭
載した状態を示し、（ａｌは断面図、（ｂｌは平面図で
ある。これらの図において、１はＳｉあるいはＧａＡｓ
などからなる半導体基板で、表面には絶縁膜（Ｓｉｎ２
膜）２が形成され、その上に窒化タングステン（ＷＮ）
の薄膜からなる薄膜抵抗ｕ３が搭載される。この薄膜抵
抗器３は、両端に′：４極配線４が接続される。また、
乙の薄膜抵抗器３は、前記電極配線４などとともに保護
膜５で覆われ、保護されている。保ＸＩ［５としては窒
化シリサイド（ＳｉＮ）が用いられている。FIG. 1 shows a state in which a thin film resistor according to an embodiment of the present invention is mounted on an IC, where (al is a cross-sectional view, and (bl is a plan view.
A semiconductor substrate made of materials such as
A film) 2 is formed on which tungsten nitride (WN) is formed.
A thin film resistor u3 made of a thin film is mounted. This thin film resistor 3 is connected to both ends thereof with 4-pole wiring 4 . Also,
The thin film resistor 3, along with the electrode wiring 4 and the like, is covered and protected by a protective film 5. Silicide nitride (SiN) is used as the material XI[5.
以上のような構造は次のようにして製造される。The structure described above is manufactured as follows.
まず、ＳｉあるいはＧａＡｓなとの半導体基板１上に絶
縁ｇｆｆ ２として５ｉｎ２膜を約４０００人化学気相
成長させる。このＳ ｉ Ｏ２膜は、その上に形成され
る薄膜抵抗器と半導体基板１とを絶縁する目的で用いる
。絶縁膜として窒化シリコン膜（ＳｉＮ膜）も知られて
いるが、薄膜抵抗器のＷＮとの密着性が悪いため、用い
ることはできない。First, on a semiconductor substrate 1 made of Si or GaAs, a 5in2 film as an insulating GFF 2 is grown by chemical vapor deposition using about 4000 people. This S i O 2 film is used for the purpose of insulating the semiconductor substrate 1 from the thin film resistor formed thereon. Although a silicon nitride film (SiN film) is also known as an insulating film, it cannot be used because of its poor adhesion to the WN of the thin film resistor.
次に、絶縁膜（Ｓ１０□膜）２上にＷＮを反応性スパッ
タリング法にて蒸着する。ここで、ターゲットにタング
ステン（Ｗ）を用い、基板１はあらかじめ１５０℃に加
熱しておき、Ａｒ分圧５ｍＴｏｒｒ。Next, WN is deposited on the insulating film (S10□ film) 2 by reactive sputtering. Here, tungsten (W) is used as a target, the substrate 1 is preheated to 150° C., and the Ar partial pressure is 5 mTorr.
Ｎ２分圧１〜１０ ｍＴｏ ｒ ｒの混合雰囲気中、直
流電源３００Ｗの反応性スパッタリングを行うことによ
り、ＷＮ４膜は均一に蒸着される。次に、このＷＮ薄膜
を、六フッ化硫黄ガス（ＳＦ６）による反応性イオンエ
ツチング法にて抵抗器パターンに加工することにより、
薄膜抵抗＠３を形成する。The WN4 film is uniformly deposited by performing reactive sputtering with a DC power source of 300 W in a mixed atmosphere with a N2 partial pressure of 1 to 10 mTorr. Next, this WN thin film was processed into a resistor pattern using reactive ion etching using sulfur hexafluoride gas (SF6).
Form a thin film resistor @3.
続イテ、Ｔｉ、 ＰｔおよびＡｕの電子ビーム蒸着とパ
ターニングにより、薄膜抵抗ＰＪ３の両端に接続される
ようにして電極配線４を形成する。Subsequently, by electron beam evaporation and patterning of Ti, Pt, and Au, electrode wiring 4 is formed so as to be connected to both ends of the thin film resistor PJ3.
以上で一応ＷＮ薄膜抵抗Ｎ３と電極配線４が形成された
わけだが、ＷＮ薄膜の抵抗値やその温度係数は、反応性
スパッタリング蒸着におけろＮ２分圧に大きく依存する
。第２図に、ＷＪ］ｉ抵抗のシート抵抗値の温度係数と
、スパッタリング蒸着におけるＮ２分圧の関係を示す。Although the WN thin film resistor N3 and the electrode wiring 4 have been formed in the above manner, the resistance value of the WN thin film and its temperature coefficient largely depend on the N2 partial pressure even in reactive sputtering deposition. FIG. 2 shows the relationship between the temperature coefficient of the sheet resistance value of the WJ]i resistance and the N2 partial pressure during sputtering deposition.
ただし、スパッタ時間は１〜４分、膜厚は１００〜４０
０人である。However, the sputtering time is 1 to 4 minutes, and the film thickness is 100 to 40 minutes.
There are 0 people.
第２図より、温度係数とＮ２分圧の対数はほぼ直線関係
にあることがわかる。たとえば、温度係数を零に近づけ
たいときは、Ｎ２分圧を１ｍＴｏｒｒとすれば、±２０
０ ｐｐｍ７℃以内の温度係数が得られろ。そのとき、
比抵抗は約０．１７Ω・傭となるので、膜厚３４０人と
すれば、５０Ω／口のシート抵抗となる。From FIG. 2, it can be seen that the temperature coefficient and the logarithm of the N2 partial pressure have a substantially linear relationship. For example, if you want the temperature coefficient to be close to zero, if the N2 partial pressure is 1 mTorr, the temperature coefficient will be ±20
Obtain a temperature coefficient within 0 ppm 7°C. then,
The specific resistance is approximately 0.17Ω·min, so if the film thickness is 340 people, the sheet resistance will be 50Ω/mouth.
ところで、ＷＮ薄膜の抵抗値は、ＷＮスパッタ前の表面
状態に大きく依存する。通常のＩＣプロセスでは、絶＆
ｉ膜を化学気相成長した後、その下にある配線とのコン
タクトをとるため絶縁膜にスルーホールを形成する。と
ころが、スルーホール形成用レジストの除去に酸素アッ
シングを用いると、絶縁膜の表面状態が変質し、その上
にスパッタリング蒸着したＷＮ＃膜の抵抗値は、化学気
相成長後何も施さない所謂アズ・デボ（ａｓ−ｄｅｐｏ
）と称される絶縁膜上と比較して約３倍となる。また、
抵抗値の面内均一性も悪くなる。アズ・デボの絶縁膜上
と同等の抵抗値を得るためには、レジストは、酸素アッ
シングではなく、リムーバを用いて化学的にかつ完全に
取り除かなくてはならない。あるいは、酸素アッシング
の後、絶縁膜表面を５％程度の薄いフッ酸でスライドエ
ツチングする必要がある。このようにすれば、ＷＮｆ４
膜の抵抗値はアズ・デボの絶縁膜上と同等であり、面内
５％以内の均一性を持つ。Incidentally, the resistance value of the WN thin film largely depends on the surface condition before WN sputtering. In normal IC process,
After chemical vapor deposition of the i-film, through-holes are formed in the insulating film to make contact with the underlying wiring. However, when oxygen ashing is used to remove the resist for forming through-holes, the surface condition of the insulating film changes, and the resistance value of the WN# film deposited by sputtering on top of the insulating film changes compared to that of the so-called as-assembled film, in which no treatment is performed after chemical vapor deposition.・as-depo
) is approximately three times as large as that on an insulating film. Also,
The in-plane uniformity of the resistance value also deteriorates. In order to obtain a resistance value equivalent to that on the as-deposited insulating film, the resist must be chemically and completely removed using a remover rather than oxygen ashing. Alternatively, after oxygen ashing, it is necessary to slide-etch the insulating film surface with a dilute hydrofluoric acid of about 5%. If you do this, WNf4
The resistance value of the film is equivalent to that on the as-deposited insulating film, and the in-plane uniformity is within 5%.
さて、上述のようにしてＷＮ４膜抵抗器３と電極配線４
を形成したならば、次に、ＷＮ薄膜抵抗器３の抵抗値調
整（トリミング）を行う。この抵抗値の調整は、アニー
ルによって行う。第３図は、Ｎ２分圧５ｍＴｏｒｒの条
件で２４０人反応性スパッタリング蒸看全行フたＷＮ薄
膜抵抗路３に対して、Ｎ２雰囲気中３８０℃のアニール
を行った時の抵抗値とアニール時間の関係図である。抵
抗値はアニール時間に対し、１分当り０．６８％の割合
で増加する。誤差は３％以内である。したがって、たと
えば４５ΩのＷＮ４膜抵抗器３を５０Ωに調整する場合
は、１６分２０秒のアニールを行えばよい。Now, the WN4 film resistor 3 and the electrode wiring 4 are connected as described above.
Once formed, the resistance value of the WN thin film resistor 3 is then adjusted (trimmed). This resistance value is adjusted by annealing. Figure 3 shows the resistance value and annealing time when the WN thin film resistor path 3 was annealed at 380°C in an N2 atmosphere under the condition of a N2 partial pressure of 5 mTorr and 240 reactive sputtering vaporizers. It is a relationship diagram. The resistance value increases at a rate of 0.68% per minute with respect to the annealing time. The error is within 3%. Therefore, for example, when adjusting a 45Ω WN4 film resistor 3 to 50Ω, annealing may be performed for 16 minutes and 20 seconds.
このようにしてＷＮ薄膜抵抗器３のトリミングを行った
ならば、最後に、抵抗器３等の保護膜５として窒化シリ
サイド（ＳｉＮ）を化学気相成長させる。この保護膜５
の形成工程および形成後の４００℃以下のアニールによ
る薄膜抵抗！！＃３の抵抗値変動はない。After trimming the WN thin film resistor 3 in this way, finally, nitride silicide (SiN) is grown in a chemical vapor phase as a protective film 5 for the resistor 3 and the like. This protective film 5
Thin film resistance through the formation process and annealing at 400°C or less after formation! ! There is no resistance value change in #3.
なお、以上の方法で、温度係数が一６００〜５００ｐｐ
ｍ（１！Ｊ差±２００ ｐｐｍ／℃）の任意の値、抵抗
値が１０〜１００Ω／口（誤差±３％）の任意の値であ
る薄膜抵抗器３が容易に得られる。In addition, with the above method, the temperature coefficient is 1600 to 500 pp.
A thin film resistor 3 having an arbitrary value of m (1!J difference ±200 ppm/°C) and an arbitrary resistance value of 10 to 100 Ω/unit (error ±3%) can be easily obtained.
（発明の効果）
以上説明したように、この発明によれば、窒化タングス
テンの薄膜により薄膜抵抗器を形成したので、アニール
という簡便かつ安価な方法で抵抗値調整（トリミング）
を行うことができる。したがって、薄膜抵抗器の抵抗値
調整がＩＣ製造におけろコストアップの原因となること
を防止できる。(Effects of the Invention) As explained above, according to the present invention, since a thin film resistor is formed from a thin film of tungsten nitride, the resistance value can be adjusted (trimmed) by a simple and inexpensive method called annealing.
It can be performed. Therefore, adjusting the resistance value of the thin film resistor can be prevented from increasing costs in IC manufacturing.
第１図ないし第３図はこの発明の薄膜抵抗器およびその
製造方法の一実施例を説明するための図で、第１図はこ
の発明の一実施例の薄膜抵抗器をＩＣ上に搭載した断面
図および平面図、第２図はＷＮ薄膜抵抗の抵抗値温度係
数と反応性スパッタリング蒸着におけるＮ２分圧の関係
図、第３図はＷＮ薄膜抵抗の抵抗値とアニール時間の関
係図である。
３・・ＷＮ薄膜抵抗器。
≦
才６一才１で、イ’Ｌ （Ｑ）1 to 3 are diagrams for explaining an embodiment of a thin film resistor of the present invention and a method for manufacturing the same, and FIG. 1 shows a thin film resistor of an embodiment of the present invention mounted on an IC. 2 is a diagram showing the relationship between the temperature coefficient of resistance of the WN thin film resistor and N2 partial pressure in reactive sputtering deposition, and FIG. 3 is a diagram showing the relationship between the resistance value of the WN thin film resistor and annealing time. 3. WN thin film resistor. ≦ 61 years old, 1 year old, I'L (Q)
Claims (2)
スパッタリング蒸着により窒化タングステン薄膜を形成
し、 この窒化タングステン薄膜を抵抗器としてパターニング
し、 その後、アニールにより窒化タングステン薄膜抵抗器の
抵抗値調整を行うようにした薄膜抵抗器の製造方法。(2) Form a tungsten nitride thin film by reactive sputtering deposition in an argon and nitrogen mixed gas atmosphere, pattern this tungsten nitride thin film as a resistor, and then adjust the resistance value of the tungsten nitride thin film resistor by annealing. A method for manufacturing a thin film resistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63194470A JPH0244701A (en) | 1988-08-05 | 1988-08-05 | Thin film resistor and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63194470A JPH0244701A (en) | 1988-08-05 | 1988-08-05 | Thin film resistor and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0244701A true JPH0244701A (en) | 1990-02-14 |
Family
ID=16325084
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63194470A Pending JPH0244701A (en) | 1988-08-05 | 1988-08-05 | Thin film resistor and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0244701A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH084883A (en) * | 1994-06-24 | 1996-01-12 | Aisin Chem Co Ltd | Resin-made pulley, its manufacture and device |
| US6025632A (en) * | 1996-12-16 | 2000-02-15 | Matsushita Electronics Corp. | Semiconductor integrated circuit with tungston silicide nitride thermal resistor |
| US7406891B2 (en) | 2003-06-02 | 2008-08-05 | Enplas Corporation | Injection molded resin gear and injection molded resin rotating body |
-
1988
- 1988-08-05 JP JP63194470A patent/JPH0244701A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH084883A (en) * | 1994-06-24 | 1996-01-12 | Aisin Chem Co Ltd | Resin-made pulley, its manufacture and device |
| US6025632A (en) * | 1996-12-16 | 2000-02-15 | Matsushita Electronics Corp. | Semiconductor integrated circuit with tungston silicide nitride thermal resistor |
| US6329262B1 (en) | 1996-12-16 | 2001-12-11 | Takeshi Fukuda | Method for producing semiconductor integrated circuit |
| US7406891B2 (en) | 2003-06-02 | 2008-08-05 | Enplas Corporation | Injection molded resin gear and injection molded resin rotating body |
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