JPS63160255A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS63160255A JPS63160255A JP31355586A JP31355586A JPS63160255A JP S63160255 A JPS63160255 A JP S63160255A JP 31355586 A JP31355586 A JP 31355586A JP 31355586 A JP31355586 A JP 31355586A JP S63160255 A JPS63160255 A JP S63160255A
- Authority
- JP
- Japan
- Prior art keywords
- epoxy resin
- inorganic filler
- resin composition
- particle size
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 30
- 239000003822 epoxy resin Substances 0.000 claims abstract description 42
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 42
- 239000002245 particle Substances 0.000 claims abstract description 40
- 239000011256 inorganic filler Substances 0.000 claims abstract description 31
- 229910003475 inorganic filler Inorganic materials 0.000 claims abstract description 31
- 239000000203 mixture Substances 0.000 claims abstract description 25
- 229920003986 novolac Polymers 0.000 claims abstract description 12
- 238000009826 distribution Methods 0.000 claims abstract description 7
- 238000000465 moulding Methods 0.000 claims description 10
- 239000003795 chemical substances by application Substances 0.000 claims description 5
- 239000004593 Epoxy Substances 0.000 claims description 4
- 239000010680 novolac-type phenolic resin Substances 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 4
- 239000005011 phenolic resin Substances 0.000 abstract description 4
- 230000015572 biosynthetic process Effects 0.000 abstract description 3
- 239000000758 substrate Substances 0.000 abstract 2
- 239000004848 polyfunctional curative Substances 0.000 abstract 1
- 229920005989 resin Polymers 0.000 description 11
- 239000011347 resin Substances 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- 239000000843 powder Substances 0.000 description 8
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 6
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 3
- 239000004203 carnauba wax Substances 0.000 description 3
- 235000013869 carnauba wax Nutrition 0.000 description 3
- 239000007822 coupling agent Substances 0.000 description 3
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000006087 Silane Coupling Agent Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Chemical compound O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229910002026 crystalline silica Inorganic materials 0.000 description 2
- 125000003700 epoxy group Chemical group 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 238000001721 transfer moulding Methods 0.000 description 2
- LXBGSDVWAMZHDD-UHFFFAOYSA-N 2-methyl-1h-imidazole Chemical compound CC1=NC=CN1 LXBGSDVWAMZHDD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000003889 chemical engineering Methods 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- -1 chlorine ions Chemical class 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000003063 flame retardant Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000006082 mold release agent Substances 0.000 description 1
- 239000012170 montan wax Substances 0.000 description 1
- 150000002989 phenols Chemical class 0.000 description 1
- 150000003018 phosphorus compounds Chemical class 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、回路基板等に対する実装を堅固に行うこと
ができる半導体装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor device that can be securely mounted on a circuit board or the like.
トランジスタ、ＩＣ，ＬＳＩ等の半導体素子はヤラミツ
クパッケージもしくはプラスチックパッケージ等により
封止され半導体装置化されている。上記セラミックパッ
ケージは構成材料そのものが耐熱性を有し、耐湿性にも
優れているため信頼性の高い封止が可能である。しかし
ながら、構成材料が比較的高価なものであることと量産
性に劣る欠点があるため最近ではエポキシ樹脂組成物を
用いた樹脂封止が主流になっている。この種のエポキシ
樹脂組成物としては、エポキシ樹脂と、硬他剤としての
ノボラック型フェノール樹脂と、イミダゾール硬化促進
剤、無機質充填剤としての石英粉末、離型剤としてのカ
ルナバワックス等から構成されている。Semiconductor elements such as transistors, ICs, and LSIs are sealed in Yaramitsu packages or plastic packages to form semiconductor devices. The ceramic package itself has heat resistance and excellent moisture resistance, so it can be sealed with high reliability. However, recently, resin sealing using an epoxy resin composition has become mainstream because the constituent materials are relatively expensive and mass production is poor. This type of epoxy resin composition is composed of an epoxy resin, a novolac type phenolic resin as a hardening agent, an imidazole curing accelerator, quartz powder as an inorganic filler, carnauba wax as a mold release agent, etc. There is.
しかしながら、上記のエポキシ樹脂組成物では、上記ト
ランジスタ、ＩＣ，ＬＳＩ等の半導体素子を封止し、半
導体装置化するときに、リードビン部分まで樹脂のパリ
が延びるため、上記半導体装置を回路基板に対して実装
する際に、上記樹脂のハリが障害となって半導体装置の
リードピンを回路基板に堅固に半田付けできない等の欠
点が生じている。However, with the above epoxy resin composition, when semiconductor elements such as transistors, ICs, LSIs, etc. are sealed and made into semiconductor devices, the resin particles extend to the lead bin part, so the semiconductor devices are not attached to the circuit board. When mounting the semiconductor device, the firmness of the resin becomes an obstacle, resulting in drawbacks such as the inability to firmly solder the lead pins of the semiconductor device to the circuit board.
この発明は、このような事情に鑑みなされたもので、回
路基板等に対して堅固に取付は固定することができる半
導体装置の提供をその目的とする。The present invention was made in view of the above circumstances, and an object of the present invention is to provide a semiconductor device that can be firmly attached and fixed to a circuit board or the like.
上記の目的を達成するため、この発明の半導体装置は、
無機質充填剤を含むエポキシ樹脂組成物によって半導体
素子を被覆モールドしてなる半導体装置において、上記
無機質充填剤が、ワーデルの球形度で０．７〜１．０の
球形度を有するものであって、その主成分が粒径５０μ
ｍ以下のものであり、かつこの粒径５０μｍ以下のもの
の粒度分布が、下記の（Ａ）〜（Ｃ）のようになってい
るという構成をとる。In order to achieve the above object, the semiconductor device of the present invention includes:
In a semiconductor device formed by covering and molding a semiconductor element with an epoxy resin composition containing an inorganic filler, the inorganic filler has a Wardell sphericity of 0.7 to 1.0, Its main component is a particle size of 50μ
m or less, and the particle size distribution of the particles having a particle size of 50 μm or less is as shown in (A) to (C) below.
（Ａ）５．ｃｒｍ以下の粒度のものが５．０〜２０．０
重量％。(A)5. Particle size of crm or less is 5.0 to 20.0
weight%.
（Ｂ）６〜１０μｍの粒度のものが５．０〜１５゜０重
量％。(B) 5.0 to 15.0% by weight of particles with a particle size of 6 to 10 μm.
（Ｃ）１１〜５０μｍの粒度のものが６０．０〜８０．
０重量％。(C) Particle size of 11-50μm is 60.0-80μm.
0% by weight.
すなわち、本発明者は、上記リードビン部分まで延びる
樹脂のパリの発生を防止する目的で無機質充填剤を中心
にモデル実験を重ねた結果、エポキシ樹脂組成物の無機
質充填剤として、上記特定の球形度のものを用い、かつ
その無機質充填剤の粒径を５０μｍ以下に設定し、しか
も、この５０μｍ以下のものの粒度分布を上記のような
割合に設定すると、パリの発生が大幅に少なくなり、し
たがって、回路基板に対する実装工程において堅固に固
定しうる半導体装置が良好な状態で得られるようになる
ことを見いだしこの発明に到達した。That is, as a result of repeated model experiments centered on inorganic fillers for the purpose of preventing the formation of flakes in the resin extending to the lead bin portion, the present inventors found that the above specific sphericity was used as the inorganic filler in the epoxy resin composition. If the particle size of the inorganic filler is set to 50 μm or less, and the particle size distribution of the inorganic filler is set to the above ratio, the occurrence of paris will be greatly reduced. The inventors have discovered that a semiconductor device that can be firmly fixed in good condition during the mounting process on a circuit board can be obtained, and this invention has been achieved.
この発明に用いるエポキシ樹脂組成物の無機質充填剤は
、上記のように、ワーデルの球形度で０゜７〜１．０の
球形度を有するものであって、その主成分が粒径５０μ
ｍ以下のものであり、しかも上記粒径５０μｍ以下のも
のの粒度分布が上記の（Ａ）〜（Ｃ）のようになってい
るものである。As mentioned above, the inorganic filler of the epoxy resin composition used in this invention has a Wardell sphericity of 0°7 to 1.0, and its main component has a particle size of 50 μm.
m or less, and the particle size distribution of the particles having a particle size of 50 μm or less is as shown in (A) to (C) above.
ここで、ワーデルの球形度（化学工学便覧、丸善株式会
社発行参照）とは粒子の球形度を、（粒子の投影面積に
等しい円の直径）／（粒子の投影像に外接する最小円の
直径）で測る指数で、この指数カ月、０に近いほど真球
体に近い粒子であることを意味する。Here, Wardell's sphericity (see Chemical Engineering Handbook, published by Maruzen Co., Ltd.) is defined as the sphericity of a particle: (diameter of a circle equal to the projected area of the particle)/(diameter of the smallest circle circumscribing the projected image of the particle) ), and the closer this index is to 0, the closer the particle is to a perfect sphere.
上記ワーデルの球形度が０．７未満になると、無機質充
填剤が異形状（角ばった状態）になって鋭利な角部をも
つことが多くなり、このような無機質充填剤を含む樹脂
で封止すると、得られる半導体装置においては、封止後
における上記樹脂の熱収縮時に、半導体素子を保護する
パッシベーション膜が無機質充填剤の鋭利な角部でｔＳ
傷を受けるようになるからである。したがって、この発
明で使用する無機質充填剤はワーデルの球形度で０．７
〜１．０の球形度を有する球状のものであることが必要
である。そして、このような球状の無機質充填剤のうち
、その主成分が粒径５０μｍ以下のものであることがさ
らに要求される。ここで、主成分とするとは、上記粒径
のものが、全無機質充填剤中央なくとも８５重量％（以
下「％」と略す）を占めることをいう。したがって、粒
径５０μｍを超える無機質充填剤は最大限で２５％まで
含まれるものであり、この場合、上記大粒径のものは、
最大粒径が５０μｌを超えるものの、１５０μｍ以下で
あることが好適である。そして、無機質充填剤の主成分
となる粒径５０μｌ以下のものについては、その粒度分
布が前記（Ａ）〜（Ｃ）のようになっていることが必要
である。このような条件を全て満たすことによって初め
て成形時の樹脂のパリの発生が防止されるようになる。When the Wardell sphericity is less than 0.7, the inorganic filler becomes irregularly shaped (angular) and often has sharp corners, making it difficult to seal with a resin containing such an inorganic filler. Then, in the semiconductor device obtained, when the resin is thermally shrunk after sealing, the passivation film that protects the semiconductor element is exposed to tS at the sharp corners of the inorganic filler.
Because you will get hurt. Therefore, the inorganic filler used in this invention has a Wardell sphericity of 0.7.
It needs to be spherical with a sphericity of ~1.0. It is further required that the main component of such a spherical inorganic filler has a particle size of 50 μm or less. Here, the term "main component" means that particles having the above particle size account for at least 85% by weight (hereinafter abbreviated as "%") of the total inorganic filler. Therefore, the inorganic filler with a particle size exceeding 50 μm is contained up to 25% at most, and in this case, the large particle size is
Although the maximum particle size exceeds 50 μl, it is preferably 150 μm or less. For particles having a particle size of 50 μl or less, which are the main components of the inorganic filler, it is necessary that the particle size distribution is as shown in (A) to (C) above. Only when all of these conditions are met can the occurrence of resin flakes during molding be prevented.
また、それと同時に、エポキシ樹脂組成物の成形時の粘
度が高くなりすぎ、成形金型のキャビティに対する未充
填部分の発生が防止されるようになる。Moreover, at the same time, the viscosity of the epoxy resin composition during molding becomes too high, and the occurrence of unfilled portions in the mold cavity is prevented.
上記のような無機質充填剤としては、例えば、シリカ粉
末、アルミナ粉末、窯化アルミニウム。Examples of the above-mentioned inorganic fillers include silica powder, alumina powder, and silica aluminum.
炭化ケイ素、タルク、結晶性シリカ粉末等があげられる
が、低熱膨張性および高純度の観点からシリカ粉末、結
晶性シリカ粉末、アルミナ粉末を使用することが好結果
をもたらす。このような無機質充填剤は、エポキシ樹脂
組成物中に５０〜９０％程度含有されるようにすること
が好ましい。すなわち、上記無機質充填剤の含有量が５
０％未満の場合には、成形時にパリの発生が多くなり、
作業性に問題を生じると同時にコストも高くなるからで
ある。逆に、無機質充填剤の含有量が９０％を超えると
成形時に未充填部分が発生する等の弊害が生じるように
なる。Examples include silicon carbide, talc, crystalline silica powder, etc., but from the viewpoint of low thermal expansion and high purity, it is preferable to use silica powder, crystalline silica powder, and alumina powder to bring about good results. It is preferable that such an inorganic filler is contained in the epoxy resin composition in an amount of about 50 to 90%. That is, the content of the inorganic filler is 5
If it is less than 0%, more flakes will occur during molding,
This is because it causes problems in workability and at the same time increases costs. On the other hand, if the content of the inorganic filler exceeds 90%, problems such as unfilled portions will occur during molding.
上記無機質充填剤が配合されるエポキシ樹脂組成物は、
その主成分がエポキシ樹脂と硬化剤とからなるものであ
る。上記エポキシ樹脂としては、１分子中に２個以上の
エポキシ基を有するエポキシ化合物であれば特に制限す
るものではない。通常エポキシ当ｆｆ１１５０〜２００
のノボラック型エポキシ樹脂であって、例えばタレゾー
ルノボラック型エポキシ樹脂、フェノールノボラック型
エポキシ樹脂、ハロゲン化フェノールノボラック型エポ
キシ樹脂等が用いられる。これらのエポキシ樹脂は単独
で用いてもよいし併せて用いても差し支えはない。特に
好適なのはタレゾールノボラック型エポキシ樹脂があげ
られ、これを全エポキシ樹脂中５０％以上の割合で使用
することが好適で、ある。そして、これらのエポキシ樹
脂は、いずれも塩素イオンの含有量が０．１％以下に設
定されていることが得られる半導体装置の信顛性の確保
の点から望ましい。The epoxy resin composition containing the above inorganic filler is
Its main components are an epoxy resin and a curing agent. The epoxy resin is not particularly limited as long as it is an epoxy compound having two or more epoxy groups in one molecule. Usually epoxy ff1150-200
Novolac type epoxy resins such as Talesol novolak type epoxy resins, phenol novolak type epoxy resins, halogenated phenol novolac type epoxy resins, etc. are used. These epoxy resins may be used alone or in combination. Particularly preferred is Talesol novolac type epoxy resin, and it is preferred to use this in a proportion of 50% or more of the total epoxy resin. In each of these epoxy resins, it is preferable that the content of chlorine ions is set to 0.1% or less in order to ensure the reliability of the resulting semiconductor device.
上記エポキシ樹脂の硬化剤としては、通常ノボラック型
フェノール樹脂が用いられ、フェノールノボラック樹脂
、タレゾールノボラック樹脂等の１分子中に２個以上の
水酸基を有する化合物であって、軟化点が６０〜１２０
℃、水酸基当量が９θ〜１２０程度のものを用いること
が好ましい。As the curing agent for the above epoxy resin, a novolac type phenolic resin is usually used, and is a compound having two or more hydroxyl groups in one molecule, such as phenol novolac resin or Talezol novolak resin, and has a softening point of 60 to 120.
℃ and a hydroxyl equivalent of about 9θ to 120 is preferably used.
上記エポキシ樹脂と上記フェノール樹脂との相互の配合
比は、上記エポキシ樹脂中のエポキシ基とフェノール樹
脂中の水酸基との当量比が０．８〜１、２となるように
配合することが好適である。上記の当量比を外れると、
特にエポキシ樹脂組成物の硬化性が著しく低下し、樹脂
としての特性が不適になるからである。上記当量比が１
に近いほど好結果が得られるようになる。The mutual compounding ratio of the epoxy resin and the phenol resin is preferably such that the equivalent ratio of the epoxy groups in the epoxy resin to the hydroxyl groups in the phenol resin is 0.8 to 1.2. be. Outside the above equivalence ratio,
In particular, this is because the curability of the epoxy resin composition is significantly reduced and the properties of the resin become unsuitable. The above equivalent ratio is 1
The closer it is to the better the results will be.
なお、この発明に用いるエポキシ樹脂組成物には、三酸
化アンチモン、リン系化合物等の難燃剤、顔料、染料、
シラン系カップリング剤、アルミニウム系カップリング
剤、チタネート系カップリング剤等のカップリング剤や
カルナバワックス。The epoxy resin composition used in this invention includes flame retardants such as antimony trioxide and phosphorus compounds, pigments, dyes,
Coupling agents such as silane coupling agents, aluminum coupling agents, titanate coupling agents, and carnauba wax.
モンタンワックス等の雌型剤を必要に応じて配合するこ
とができる。A female molding agent such as montan wax can be added as necessary.
この発明に用いるエポキシ樹脂組成物は、例えば、上記
のような特定の無機質充填剤と、エポキシ樹脂、フェノ
ール樹脂および必要に応じてその他の添加剤を配合し、
この配合物をミキサー等によって充分混合分散させたの
ち、ミキシングロール機等の混練機に掛けて加熱状態で
混練する。ついで得られた混練物を室温まで冷却した後
公知の手段によって粉砕し、必要に応じて打錠してタブ
レット化するという一連の工程を経由させることにより
製造することができる。The epoxy resin composition used in this invention is, for example, blended with a specific inorganic filler as described above, an epoxy resin, a phenol resin, and other additives as necessary,
After this mixture is sufficiently mixed and dispersed using a mixer or the like, it is applied to a kneader such as a mixing roll machine and kneaded in a heated state. It can be manufactured by passing through a series of steps of cooling the obtained kneaded product to room temperature, pulverizing it by known means, and, if necessary, compressing it into tablets.
このようなエポキシ樹脂組成物を用いての半導体素子の
封止は特に限定するものではなく、通常の方法、例えば
トランスファー成形等の公知のモールド方法により行う
ことができる。The encapsulation of a semiconductor element using such an epoxy resin composition is not particularly limited, and can be performed by a conventional method, for example, a known molding method such as transfer molding.
このようにして得られる半導体装置は、成形時において
樹脂のパリが生じていす、したがって、例えば回路基板
に対する実装に際して上記ハリが邪魔にならず堅固に固
定しうるようになる。In the semiconductor device obtained in this manner, resin burrs occur during molding, and therefore, when mounted on, for example, a circuit board, the above-mentioned burrs do not interfere and can be firmly fixed.
この発明の半導体装置は、以上のように構成されている
ため、リードピン上に４５４脂のパリが生していす、し
たがって、パリに邪魔されることな（回路基板等に堅固
に取付は固定しろるのである。Since the semiconductor device of the present invention is constructed as described above, a 454 mm thick layer is formed on the lead pin. It is.
つぎに、この発明を実施例にもとづいて詳しく説明する
。Next, the present invention will be explained in detail based on examples.
まず、無機質充填剤として下記の第１表に示すような粒
度分布の無機質充填剤Ａ−Ｄ（いずれもシリカ粉末）を
準備した。First, inorganic fillers A to D (all silica powder) having particle size distributions as shown in Table 1 below were prepared as inorganic fillers.
つぎに、上記の無機質充填剤を用いつぎのようにしてエ
ポキシ樹脂組成物をつくり、それを用いて半導体装置を
製造した。Next, an epoxy resin composition was prepared using the above inorganic filler in the following manner, and a semiconductor device was manufactured using the composition.
〔実施例１〜４．比較例１．２〕
タレゾールノボラック型エポキシ樹脂（エポキシ当量２
１０．軟化点８０℃）１００重量部（以下「部」と略す
）に対してフェノールノボラック樹脂（軟化点７８℃、
水酸基当量１１０）５７部、２−メチルイミダゾール０
．３部、主成化アンチモン１０部、シランカップリング
剤（日本ユニカー社製、Ａ−１８６）３部、カーボンブ
ラック２部およびカルナバワックス４部ならびに第１表
の無機質充填剤Ａ−Ｄを後記の第２表に示す割合で配合
した。つぎに、この配合物を９０〜１００℃の熱ロール
に掛けて１０分間混練し、ついで冷却粉砕してエポキシ
樹脂組成物を得た。[Examples 1 to 4. Comparative Example 1.2] Talesol novolac type epoxy resin (epoxy equivalent: 2
10. Phenol novolak resin (softening point 78°C,
Hydroxyl equivalent: 110) 57 parts, 2-methylimidazole 0
．． 3 parts, 10 parts of antimony, 3 parts of a silane coupling agent (manufactured by Nippon Unicar Co., Ltd., A-186), 2 parts of carbon black, 4 parts of carnauba wax, and the inorganic fillers A-D in Table 1 below. They were blended in the proportions shown in Table 2. Next, this mixture was kneaded for 10 minutes on a heated roll at 90 to 100°C, and then cooled and ground to obtain an epoxy resin composition.
つぎに、上記のようにして得られたエポキシ樹脂組成物
を用い、半導体素子をトランスファー成形によってモー
ルドすることにより半導体装置を得た。このようにして
得られた半導体装置において、リードビン部分まで延び
たパリの長さおよびパッシベーションクラックならびに
断線について測定し、後記の第２表に示した。Next, a semiconductor device was obtained by molding a semiconductor element by transfer molding using the epoxy resin composition obtained as described above. In the semiconductor device thus obtained, the length of the pin extending to the lead bin portion, passivation cracks, and wire breaks were measured, and the results are shown in Table 2 below.
（以下余白）
（余白）
第２表から実施測高は、パリが比較例に比べていずれも
小さく、したがって、回路基板に対する実装時にハリが
邪魔にならず堅固な固定を実現しうろことがわかる。(Margins below) (Margins) From Table 2, it can be seen that the height measurements taken are smaller than those of the comparative examples, and therefore, firm fixation can be achieved without the stiffness getting in the way when mounting on the circuit board. .
Claims (3)
半導体素子を被覆モールドしてなる半導体装置において
、上記無機質充填剤が、ワーデルの球形度で０．７〜１
．０の球形度を有するものであつて、その主成分が粒径
５０μｍ以下のものであり、かつこの粒径５０μｍ以下
のものの粒度分布が、下記の（Ａ）〜（Ｃ）のようにな
つていることを特徴とする半導体装置。 （Ａ）５μｍ以下の粒度のものが５．０〜２０．０重量
％。 （Ｂ）６〜１０μｍの粒度のものが５．０〜１５．０重
量％。 （Ｃ）１１〜５０μｍの粒度のものが６０．０〜８０．
０重量％。(1) In a semiconductor device formed by covering and molding a semiconductor element with an epoxy resin composition containing an inorganic filler, the inorganic filler has a Wardell sphericity of 0.7 to 1.
．． It has a sphericity of 0, the main component has a particle size of 50 μm or less, and the particle size distribution of the particle size of 50 μm or less is as shown in (A) to (C) below. A semiconductor device characterized by: (A) 5.0 to 20.0% by weight of particles with a particle size of 5 μm or less. (B) 5.0 to 15.0% by weight of particles with a particle size of 6 to 10 μm. (C) Particle size of 11-50μm is 60.0-80μm.
0% by weight.
エポキシ当量１５０〜２２０のノボラック型エポキシ樹
脂である特許請求の範囲第１項記載の半導体装置。(2) The epoxy resin in the epoxy resin composition is
The semiconductor device according to claim 1, which is a novolac type epoxy resin having an epoxy equivalent of 150 to 220.
ック型フェノール樹脂である特許請求の範囲第１項また
は第２項記載の半導体装置。(3) The semiconductor device according to claim 1 or 2, wherein the curing agent in the epoxy resin composition is a novolac type phenolic resin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61313555A JP2572761B2 (en) | 1986-12-23 | 1986-12-23 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61313555A JP2572761B2 (en) | 1986-12-23 | 1986-12-23 | Semiconductor device |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7153238A Division JP2747247B2 (en) | 1995-06-20 | 1995-06-20 | Resin composition for semiconductor encapsulation |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63160255A true JPS63160255A (en) | 1988-07-04 |
| JP2572761B2 JP2572761B2 (en) | 1997-01-16 |
Family
ID=18042727
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61313555A Expired - Lifetime JP2572761B2 (en) | 1986-12-23 | 1986-12-23 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2572761B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01294765A (en) * | 1988-05-20 | 1989-11-28 | Nippon Retsuku Kk | Epoxy resin composition |
| JPH05235210A (en) * | 1991-08-02 | 1993-09-10 | Matsushita Electric Works Ltd | Epoxy resin forming material for sealing |
| JP2003137970A (en) * | 2001-08-24 | 2003-05-14 | Sanyo Chem Ind Ltd | Epoxy resin composition for electric and electronic element |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS567299A (en) * | 1979-06-25 | 1981-01-24 | Fujitsu Ltd | Error correcting circuit |
| JPS5760779A (en) * | 1980-08-08 | 1982-04-12 | Thomson Brandt | Integrated interface circuit |
| JPS57212225A (en) * | 1981-06-24 | 1982-12-27 | Nitto Electric Ind Co Ltd | Epoxy resin composition for encapsulation of semiconductor |
| JPS58138740A (en) * | 1982-02-15 | 1983-08-17 | Denki Kagaku Kogyo Kk | Resin composition |
| JPS60115641A (en) * | 1983-11-25 | 1985-06-22 | Denki Kagaku Kogyo Kk | Filler for sealing resin and its composition |
| JPS60210643A (en) * | 1983-11-30 | 1985-10-23 | Denki Kagaku Kogyo Kk | Filler and its composition |
| JPS6157347A (en) * | 1984-08-29 | 1986-03-24 | Toshiba Corp | Controller of printer |
| JPS61190961A (en) * | 1985-02-19 | 1986-08-25 | Nitto Electric Ind Co Ltd | Semiconductor device |
| JPS61283615A (en) * | 1985-06-11 | 1986-12-13 | Sumitomo Bakelite Co Ltd | Epoxy resin molding material for sealing semiconductor |
-
1986
- 1986-12-23 JP JP61313555A patent/JP2572761B2/en not_active Expired - Lifetime
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS567299A (en) * | 1979-06-25 | 1981-01-24 | Fujitsu Ltd | Error correcting circuit |
| JPS5760779A (en) * | 1980-08-08 | 1982-04-12 | Thomson Brandt | Integrated interface circuit |
| JPS57212225A (en) * | 1981-06-24 | 1982-12-27 | Nitto Electric Ind Co Ltd | Epoxy resin composition for encapsulation of semiconductor |
| JPS58138740A (en) * | 1982-02-15 | 1983-08-17 | Denki Kagaku Kogyo Kk | Resin composition |
| JPS60115641A (en) * | 1983-11-25 | 1985-06-22 | Denki Kagaku Kogyo Kk | Filler for sealing resin and its composition |
| JPS60210643A (en) * | 1983-11-30 | 1985-10-23 | Denki Kagaku Kogyo Kk | Filler and its composition |
| JPS6157347A (en) * | 1984-08-29 | 1986-03-24 | Toshiba Corp | Controller of printer |
| JPS61190961A (en) * | 1985-02-19 | 1986-08-25 | Nitto Electric Ind Co Ltd | Semiconductor device |
| JPS61283615A (en) * | 1985-06-11 | 1986-12-13 | Sumitomo Bakelite Co Ltd | Epoxy resin molding material for sealing semiconductor |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01294765A (en) * | 1988-05-20 | 1989-11-28 | Nippon Retsuku Kk | Epoxy resin composition |
| JPH05235210A (en) * | 1991-08-02 | 1993-09-10 | Matsushita Electric Works Ltd | Epoxy resin forming material for sealing |
| JP2003137970A (en) * | 2001-08-24 | 2003-05-14 | Sanyo Chem Ind Ltd | Epoxy resin composition for electric and electronic element |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2572761B2 (en) | 1997-01-16 |
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