JPS63158871A - Optoelectronic integrated circuit - Google Patents

Optoelectronic integrated circuit

Info

Publication number
JPS63158871A
JPS63158871A JP30703286A JP30703286A JPS63158871A JP S63158871 A JPS63158871 A JP S63158871A JP 30703286 A JP30703286 A JP 30703286A JP 30703286 A JP30703286 A JP 30703286A JP S63158871 A JPS63158871 A JP S63158871A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
layer
etched
inp
sections except
diodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP30703286A
Inventor
Tomoji Terakado
Original Assignee
Nec Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/1443Devices controlled by radiation with at least one potential jump or surface barrier

Abstract

PURPOSE:To obtain large level shift voltage by diffusing an impurity to a contact layer in a PIP photodiode and forming a P-N junction. CONSTITUTION:A channel layer 11 consisting of n-InP, a FET layer 12 composed of P-In0.81Ga0.19As0.41P0.59, a contact layer 13 made up of n-InP, an absorption layer 14 consisting of n-In0.47Ga0.53As, and a window layer 15 composed of n-InP are grown onto a semi-insulating InP substrate 10 in succession. The layer 15 and the layer 14 in sections except a region as a diode 1 are etched successively. SiO2 is deposited onto the whole surface of a wafer, Zn is diffused to form P-type inversion regions 16, 17, and the layer 13 in sections except regions serving as diodes 1 and 2 is etched. The diodes 1 and 2, the layer 12 in sections except a region serving as a transistor 4, the layer 11 and the substrate 10 are etched in order, thus shaping P side electrodes 18, 19, 20. The layer 12 is etched to form N side electrodes 22, 23, 24. A resistor 3 is shaped after heat treatment, and an SiO2 film 25 is attached onto the whole surface, thus forming a wiring layer.
JP30703286A 1986-12-22 1986-12-22 Optoelectronic integrated circuit Pending JPS63158871A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP30703286A JPS63158871A (en) 1986-12-22 1986-12-22 Optoelectronic integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP30703286A JPS63158871A (en) 1986-12-22 1986-12-22 Optoelectronic integrated circuit

Publications (1)

Publication Number Publication Date
JPS63158871A true true JPS63158871A (en) 1988-07-01

Family

ID=17964213

Family Applications (1)

Application Number Title Priority Date Filing Date
JP30703286A Pending JPS63158871A (en) 1986-12-22 1986-12-22 Optoelectronic integrated circuit

Country Status (1)

Country Link
JP (1) JPS63158871A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5399884A (en) * 1993-11-10 1995-03-21 General Electric Company Radiation imager with single passivation dielectric for transistor and diode
CN104992953A (en) * 2015-07-13 2015-10-21 成都嘉石科技有限公司 GaAs-based optoelectronic integrated device and preparation method thereof

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5399884A (en) * 1993-11-10 1995-03-21 General Electric Company Radiation imager with single passivation dielectric for transistor and diode
US5516712A (en) * 1993-11-10 1996-05-14 General Electric Company Method of fabricating radiation imager with single passivation dielectric for transistor and diode
CN104992953A (en) * 2015-07-13 2015-10-21 成都嘉石科技有限公司 GaAs-based optoelectronic integrated device and preparation method thereof

Similar Documents

Publication Publication Date Title
JPS54155778A (en) Semiconductor device and its manufacture
JPH01205564A (en) Optical semiconductor device and its manufacture
JPS5572084A (en) Semiconductor photo-detector
JPS54112179A (en) Semiconductor device
JPS6286756A (en) Optoelectric transducer
JPS59123279A (en) Manufacture of photoelectric conversion device
JPS5785266A (en) Zener diode
JPS6116580A (en) Optical detection semiconductor device
JPS5473585A (en) Gate turn-off thyristor
JPS55105344A (en) Semiconductor device
JPS54107689A (en) Semiconductor laser element
JPS61226973A (en) Avalanche photodiode
JPS5417682A (en) Semiconductor and its manufacture
JPS5615068A (en) Semiconductor device and manufacture thereof
JPS5513990A (en) Semiconductor device
JPS5413275A (en) Controlled rectifying element of semiconductor
JPS5687380A (en) Semiconductor device for detection of radiant light
JPS63122285A (en) Material for semiconductor photodetector
JPS6423580A (en) Semiconductor photodetector device
JPS60260162A (en) Manufacture of semiconductor device
JPS58154286A (en) Semiconductor device
JPS5574190A (en) Photoelectro-converting semiconductor device
JPH0258335A (en) Manufacture of semiconductor device
JPS61185976A (en) Field effect transistor
JPS54149465A (en) Production of semiconductor device