JP3199414B2 - Optoelectronic integrated circuit device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optoelectronic integrated circuit device for converting an optical signal into an electric signal.

[0002]

2. Description of the Related Art Conventionally, as an opto-electronic integrated circuit device for converting an optical signal into an electric signal, for example, the one shown in FIGS.
P. 294, published by Shokabo, written by Hideaki Matsueda). Here, FIG. 2A is a perspective view, and FIG. 2B is a cross-sectional view taken along line XX of FIG. 2A.

[0003] Reference numeral 1 in the figure denotes a semi-insulating GaAs substrate. The substrate 1 has a field effect transistor (FE) comprising a source (S), a drain (D), and a gate (G).
T) 2 and pin diodes 3a and 3b are formed.
The pin diode is provided on the substrate 1 with n ⁺ GaAs
i-type AI formed via s layer 3 and i-type GaAs layer 5
A diffusion layer 7 made of Zn on the GaAs layer 6, an n-electrode 8 connected to the GaAs layer 4, and a p-electrode 9 connected to the diffusion layer 7
It is composed of In the drawing, reference numeral 10 denotes an insulating film, and 11 denotes a wiring connecting the gate of the FET 2 and the p-electrode 9.

[0004]

By the way, in the conventional optoelectronic integrated circuit device, after the signal is converted from light to electricity by a pin diode, this electric signal is renewed.
Supplying to ET. Therefore, there is a disadvantage that the photoelectric conversion efficiency and dark current of the pin diode, and the resistance and capacitance of the FET greatly affect the performance.

The present invention has been made in view of the above circumstances, and an object of the present invention is to provide an optoelectronic integrated circuit device having a very high response speed by directly controlling an electric signal by light.

[0006]

According to the present invention, there is provided a first electron path formed on a semiconductor substrate for passing electrons having the same phase, and a plurality of second electrons for dividing the electrons to pass therethrough. A quantum interference device having a path and a third electron path for superimposing and interfering electrons passing through the second electron path; and a semiconductor laser formed on the semiconductor substrate and having an active layer as a component. An opto-electronic integrated circuit device comprising:

The phase of electrons passing through at least one of the plurality of second electron paths is controlled by light leaking from an active layer of the semiconductor laser. An integrated circuit device.

[0008]

In the above structure, the electrons injected from the source electrode, which is one of the structures of the quantum interference device, are such that the first electron path is sufficiently thin above and is completely quantized in the direction perpendicular to the traveling direction. And the length is equal to or less than the inelastic scattering length, so that the phases are aligned. Next, the electrons of the same phase are diverted to the second electron path. At this time, if the potentials in both paths are different,
A difference occurs in the electronic phase in each path, and when merging in the third electronic path, an interference effect occurs. That is, if both are in phase, current flows from the source electrode to the drain electrode, but does not flow in opposite phases.

Here, the difference in potential is caused by an electric field of light having a uniform phase in the laser active layer. In other words, in the laser oscillation state, the phases of the light are uniform, so that the potential of the shunted second electron path closer to the laser active layer changes, whereby the electrons flowing through both paths are changed. Since the phase is changed, the current at the time of the final merging can be changed. In this configuration, not the number of electrons but the phase thereof is controlled, so that the dark current is extremely small. Further, since wiring for connecting the optical element and the electronic element is unnecessary, there is no problem of parasitic capacitance and parasitic resistance due to this. .

[0010]

An embodiment of the present invention will now be described with reference to FIG.
This will be described with reference to FIG.

Reference numeral 21 in the figure denotes a semiconductor substrate. This board
A laser active layer 22 and a quantum interference device 23 adjacent to the active layer 22 are monolithically integrated on the active layer 22. The quantum interference element 23 includes a source electrode 24, a first electron path 25 for passing electrons having the same phase, and a plurality of second electron paths 26a for dividing and passing the electrons. 26b
And a third electron path 27 for superimposing and interfering electrons passing through the second electron paths 26a and 26b, and a drain electrode 28. Here, the first electron path 25 is sufficiently thin, is completely quantized in the direction perpendicular to the traveling direction, and has a length equal to or less than the inelastic scattering length. In the optoelectronic integrated circuit device having such a configuration, the phase of electrons passing through at least one of the plurality of second electron paths 26a and 26b is controlled by light leaking from the active layer of the semiconductor laser. Have been. Next, the operation of the device having such a configuration will be described.

The electrons injected from the source electrode 24 are in phase because the first electron path 25 has the above-described configuration. Next, the electrons having the same phase are shunted to the second electron paths 26a and 26b. At this time, if the potentials in both paths are different, a difference occurs in the electron phase in each path, and
When merging at the electron path 27, an interference effect occurs. That is, if the two have the same phase, a current flows from the source electrode 24 to the drain electrode 28, but does not flow in the opposite phase.

[0013] In the optoelectronic integrated circuit device having the above configuration,
When the laser oscillates and a standing wave of light rises in the laser active layer 22, the electric field generated by the light also becomes a standing wave. The second electron paths 26a, 26a of the quantum interference
Position b. By doing so, one of the second
Since the electron path 26a is closer to the active layer than the other second electron path 26b, the electron path 26a is strongly affected by the electric field, and a potential difference occurs between the two paths. Therefore, the degree of interference of the quantum interference device 23 can be controlled by the oscillation and non-oscillation of the laser. In addition, the quantum interference element 23 has almost no capacity, and since the electronic phase is directly controlled by light, the response speed is extremely high. In this case, a DFB (Distribut) is used as a semiconductor laser.
If an ed feedback laser is used, the standing wave is stabilized, so that the controllability is further improved. Next, FIG.
A method of manufacturing the optoelectronic integrated circuit having the above configuration will be described with reference to FIG.

On a semiconductor substrate 21 made of n-type GaAs,
A cladding layer 31, an active layer 22, a cladding layer 32, and a current blocking layer 33 are sequentially formed by epitaxial growth. The current block layer 33 has a pnpn structure and is formed by selective burying growth. Next, Ti, Pt, and Au are deposited in this order to form a p-electrode.
Next, AuGe, Ni, and Au are deposited in this order to form an n-electrode 35. Thereby, the active layer 22
Is completed. Further, after depositing the insulating layer 36, NiSi ₂ is deposited thereon by simultaneous vapor deposition of Ni and Si. Thereafter, electron beam lithography and dry etching are performed to obtain Ni.
The quantum interference device 23 is manufactured by processing Si ₂ . Where Ni
The reason for using Si ₂ is that the inelastic scattering length is large. The apparatus shown in FIG. 1 is obtained by the above procedure.

According to the optoelectronic integrated circuit device according to the above-described embodiment, the laser active layer 22 and the quantum interference device 23 are provided close to each other, and the laser light is directly applied to the quantum interference device 23 by the electric field of the laser light. Since the phase of the electrons is controlled, the response speed can be extremely increased.

[0016]

As described above in detail, according to the present invention, an optoelectronic integrated circuit device having a very high response speed can be provided by directly controlling an electric signal by light.

[Brief description of the drawings]

1A and 1B show an optoelectronic integrated circuit device according to an embodiment of the present invention, FIG. 1A is a plan view, and FIG. 1B is a cross-sectional view taken along line XX of FIG.

FIG. 2 shows a conventional optoelectronic integrated circuit device, and FIG.
FIG. 2B is a perspective view, and FIG. 2B is a cross-sectional view taken along line XX of FIG.

[Explanation of symbols]

21: semiconductor substrate, 22: laser active layer, 23: quantum interference device, 24: source electrode, 25: first electron path, 26a, 26b ...
Second electron path, 27 ... third electron path, 28 ... drain electrode,
31, 32: cladding layer, 33: current blocking layer, 34: p electrode, 35: n electrode, 36: insulating film.

Claims (2)

(57) [Claims] 1. A first electron path formed on a semiconductor substrate for passing electrons having the same phase, a plurality of second electron paths for splitting and passing the electrons, and a second electron path. An opto-electronic integrated circuit device comprising: a quantum interference device having a third electron path for superimposing and interfering the passed electrons; and a semiconductor laser formed on the semiconductor substrate and having an active layer as a component. 2. The optoelectronic integration according to claim 1, wherein the phase of electrons passing through at least one of the plurality of second electron paths is controlled by light leaking from an active layer of the semiconductor laser. Circuit device. 2. The optoelectronic integrated circuit device according to claim 1, wherein an electron path of the second electron path, the phase of which passing electrons is controlled, is closer to the active layer of the semiconductor laser than the other second electron paths. .