JPS63157452A - Lead frame - Google Patents

Lead frame

Info

Publication number
JPS63157452A
JPS63157452A JP30512886A JP30512886A JPS63157452A JP S63157452 A JPS63157452 A JP S63157452A JP 30512886 A JP30512886 A JP 30512886A JP 30512886 A JP30512886 A JP 30512886A JP S63157452 A JPS63157452 A JP S63157452A
Authority
JP
Japan
Prior art keywords
plating
resin
lead frame
burning
burnt
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP30512886A
Other languages
Japanese (ja)
Inventor
Juichi Nakai
中井 寿一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shinko Electric Industries Co Ltd
Original Assignee
Shinko Electric Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinko Electric Industries Co Ltd filed Critical Shinko Electric Industries Co Ltd
Priority to JP30512886A priority Critical patent/JPS63157452A/en
Publication of JPS63157452A publication Critical patent/JPS63157452A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To contrive improvement in tight adhesiveness of resin by a method wherein burning plating having low degree of smoothness is performed on the ordinary base plating on the whole or a part of the section to be tightly fixed to the resin of a lead frame. CONSTITUTION:A burning plating work is performed on the whole surface or a part of the tightly fixed surface of a lead frame 10 and resin. If the burning plating is performed directly on the lead frame material, a fragile film having poor tight-adhesive property and inferior heat-resisting property is obtained. Therefore, an ordinary plated film having the characteristics excellent in heat- resisting property and the like is used as the base plating of the burning plating, and the burning plating is performed on the above-mentioned base plating. As a result, the various characteristics of the burning plating can be improved. The range of area where the burning plating is performed is the all surfaces corresponded by an inner lead 14, a stage 16, and a stage support bar 18, for example. As the plated surface having low degree of smoothness is formed on the tightly adhered part of the frame 10 and resin through the above- mentioned processes, the tight adhessiveness of the resin can be improved.

Description

【発明の詳細な説明】 (産業上の利用分野) 本発明はリードフレームに関し、一層詳細には、半導体
素子等の電子部品を収容する樹脂封止型電子部品用パッ
ケージに用いるリードフレームであって、樹脂との密着
性に優れるリードフレームに関するものである。
Detailed Description of the Invention (Field of Industrial Application) The present invention relates to a lead frame, and more particularly to a lead frame used in a resin-sealed electronic component package that houses electronic components such as semiconductor elements. , relates to a lead frame that has excellent adhesion to resin.

(従来の技術) 樹脂封止型電子部品用パッケージを用いた半導体装置は
、半導体素子、リードフレームのインナーリード部等を
樹脂で封止して用いるのであるが、半導体素子が湿気等
を嫌うものであるため、樹脂とリードフレームとの密着
性に優れるものであることが要求されている。
(Prior art) Semiconductor devices using resin-sealed electronic component packages are used by sealing semiconductor elements, inner leads of lead frames, etc. with resin, but semiconductor elements do not like moisture etc. Therefore, it is required to have excellent adhesion between the resin and the lead frame.

従来上記の樹脂とリードフレームとの間の密着性を向上
させるために種々の手段が講じられている。
Conventionally, various measures have been taken to improve the adhesion between the resin and the lead frame.

例えば、リードフレームに施すめっきの種類が検討され
ている。すなわち、種々のめっき膜の樹脂との密着性が
比較検討されている。
For example, the types of plating applied to lead frames are being considered. That is, the adhesion of various plating films to resin has been compared and studied.

また、プレス加工あるいはエツチング加工等によってリ
ードフレーム表面になし地等の凹凸を形成し、樹脂との
間の物理的密着性の向上を図ることも試みられている。
Furthermore, attempts have been made to form irregularities such as pear on the surface of the lead frame by pressing or etching to improve the physical adhesion between the lead frame and the resin.

(発明が解決しようとする問題点) しかしながら、上記の従来の手段には次のような問題点
がある。
(Problems to be Solved by the Invention) However, the above conventional means have the following problems.

すなわち、リードフレーム表面に施すめっきの種類を検
討することは有効であるが、新たなめっき浴の開発が必
要となるなど選定に時間を要する問題がある。
In other words, it is effective to consider the type of plating to be applied to the surface of the lead frame, but there are problems in that selection requires time, such as the need to develop a new plating bath.

またプレス加工、エツチング加工等によってリードフレ
ーム表面に凹凸を形成するのは、凹凸の大きさ等のコン
トロールが難しく、工程が増加し、コストアレブの一因
となる。
Furthermore, forming irregularities on the surface of the lead frame by pressing, etching, etc. makes it difficult to control the size of the irregularities, increases the number of steps, and contributes to cost-effectiveness.

そこで本発明は上記問題点を解消すべくなされたもので
あり、その目的とするところは、樹脂との密着性が極め
て良好であり、また安価に供しうるリードフレームを提
供するにある。
The present invention has been made to solve the above problems, and its purpose is to provide a lead frame that has extremely good adhesion to resin and can be provided at low cost.

(発明の概要) 上記目的による本発明に係るリードフレームでは、樹脂
封止型電子部品用パッケージに用いるリードフレームに
おいて、少なくとも樹脂に密着する部位の全体もしくは
一部分に、通常のめっきを下地として焼けめっきを施し
てなることを特徴としている。
(Summary of the Invention) In the lead frame according to the present invention for the above-mentioned purpose, in the lead frame used for a resin-sealed electronic component package, at least the whole or a part of the portion that comes into close contact with the resin is burnt plated with a normal plating as a base. It is characterized by being subjected to

(作用) 焼けめっきの凹凸により樹脂との物理的結合力が増大し
、樹脂との密着力が向上する。
(Function) The unevenness of the burnt plating increases the physical bonding force with the resin and improves the adhesion with the resin.

(実施例) 以下には本発明の好適な実施例を添付図面に基づいて詳
細に説明する。
(Embodiments) Hereinafter, preferred embodiments of the present invention will be described in detail based on the accompanying drawings.

第1図はリードフレーム10の説明図を示す。FIG. 1 shows an explanatory diagram of the lead frame 10. As shown in FIG.

12はアウターリード、14はインナーリードである。12 is an outer lead, and 14 is an inner lead.

16は半導体素子(図示せず)が搭載されるステージで
あり、ステージサポートパー18によってレール部20
,20に連結している。
Reference numeral 16 denotes a stage on which a semiconductor element (not shown) is mounted, and a rail portion 20 is supported by a stage support par 18.
, 20.

ステージ16に搭載した半導体素子はワイヤーボンディ
ングによりインナーリード14との間の電気的導通が図
られる。
The semiconductor element mounted on the stage 16 is electrically connected to the inner lead 14 by wire bonding.

図中点線で示す領域は樹脂封止領域であり、半導体素子
、インナーリード14等を樹脂中に封止する。
The region indicated by the dotted line in the figure is a resin sealing region, and the semiconductor element, inner leads 14, etc. are sealed in the resin.

22はダムバーであり、成形金型と共働して樹脂を堰止
めるものである。
A dam bar 22 works together with the molding die to dam the resin.

本発明において特徴的なのは、リードフレーム10の樹
脂との密着面の全面あるいは一部に焼けめっきを施した
点にある。焼けめっきとは、通常よりも高い電流密度で
析出させた結晶粒が粗大で表面の平滑度が悪いめっき表
面となっているめっき膜をいう。
A feature of the present invention is that the entire or part of the surface of the lead frame 10 that is in close contact with the resin is burnt plated. Burnt plating refers to a plating film in which the crystal grains deposited at a higher current density than usual are coarse and the plating surface has poor surface smoothness.

なお焼けめっきをリードフレーム素材上に直接施すと、
密着性が悪く耐熱性の劣る脆い皮膜となる。そこで本発
明では、焼けめっきの下地として、耐熱性等の特性に優
れる通常のめっき膜を施し、この下地めっき上に焼けめ
っきを施すのである。
Furthermore, if burnt plating is applied directly onto the lead frame material,
This results in a brittle film with poor adhesion and poor heat resistance. Therefore, in the present invention, a normal plating film having excellent properties such as heat resistance is applied as a base for the burnt plating, and the burnt plating is applied on top of this base plating.

これにより、焼けめっきの緒特性は改善される。This improves the properties of burnt plating.

なお焼けめっきは、そのめっき厚が厚いと、下地めっき
があっても当然に1危いものとなるので、焼けめっき厚
としては、1μm以下の厚さとなるようにするのがよい
Incidentally, if the thickness of the burnt plating is thick, it will naturally be dangerous even if there is an underlying plating, so the thickness of the burnt plating is preferably 1 μm or less.

焼けめっきの種類としては下地めっきと同材質のものと
するのが、下地めっきに引続いて同一の浴で焼けめっき
を施すことができて有利である。
As for the type of burnt plating, it is advantageous to use the same material as the base plating, since the burnt plating can be performed in the same bath following the base plating.

しかし、焼けめっきを下地めっきと異なる材質のものと
することもできる。
However, the burnt plating can be made of a different material from the base plating.

めっきの種類としては、銀、ニッケル、銅、錫−ニッケ
ルめっき等が挙げられる。
Types of plating include silver, nickel, copper, tin-nickel plating, and the like.

焼けめっきを施す範囲は特に限定されない。The range to which burn plating is applied is not particularly limited.

すなわち、樹脂を密着する範囲の全面、例えばインナー
リード14、ステージ16、ステージサトバー18の対
応する部位全面に施すことができる。
That is, the resin can be applied to the entire surface of the area to which the resin is to be adhered, for example, to the entire surface of the corresponding parts of the inner lead 14, stage 16, and stage sat bar 18.

ステージ16上に焼けめっきを施すと、半導体素子の固
定の障害となると推測されるが、実用上特に問題はなく
、半導体素子をステージ16上にはんだを用いて固定す
る場合においては、表面が焼けめっきであれば、かえっ
て良好なはんだ濡れ性を示し、半導体素子を強固に固定
しうる。
If burnt plating is applied on the stage 16, it is presumed that it will hinder the fixing of the semiconductor element, but there is no particular problem in practical use.When fixing the semiconductor element on the stage 16 using solder, Plating actually exhibits good solder wettability and can firmly fix the semiconductor element.

焼けめっきが半導体素子の固定の際の障害となるもので
ある場合には、インナーリード14のみに焼けめっきを
部分めっきするとよい。
If the burnt plating is an obstacle when fixing the semiconductor element, it is preferable to partially plate only the inner leads 14 with the burnt plating.

また焼けめっきはリードフレーム10の全面に施すので
もよい。この場合、アウターリード12にも焼けめっき
が形成されるが、前述と同様に、半導体装置の外部接続
用としてアウターリード12上に施されるはんだのはん
だ濡れ性を向上させることができる。
Further, the burnt plating may be applied to the entire surface of the lead frame 10. In this case, burnt plating is also formed on the outer leads 12, but as described above, the solder wettability of the solder applied on the outer leads 12 for external connection of the semiconductor device can be improved.

次にワイヤーボンディング性であるが、前述のように、
焼けめっきが、良好な通常の下地めっき上に1μm以下
程度の厚さに施される場合にはワイヤーボンディングに
全く支障を来さなかった。
Next is wire bonding, as mentioned above.
When the burnt plating was applied to a thickness of about 1 μm or less on a good normal base plating, wire bonding was not hindered at all.

本発明においては上記のように、リードフレームの樹脂
との密着部位に焼けめっきが施されてめっき表面の平滑
度が低く形成されているので樹脂との密着度が極めて良
好である。
In the present invention, as described above, the part of the lead frame that is in close contact with the resin is baked and the plated surface has a low smoothness, so that the degree of adhesion with the resin is extremely good.

因みにインナーリード14に通常の銀めっきを施したリ
ードフレームの樹脂との密着度は、100ピース中不良
が2〜3ピース見られたが、インナーリード14に通常
の銀めっきを下地として焼は銀めっきを0.1μm施し
た場合の樹脂との密着度は、100ピース中不良品が皆
無であった。
Incidentally, regarding the degree of adhesion between the lead frame and the resin in which the inner leads 14 were plated with ordinary silver, 2 to 3 out of 100 pieces were found to be defective. Regarding the degree of adhesion to the resin when plating was applied to a thickness of 0.1 μm, there were no defective products among 100 pieces.

(発明の効果) 以上のように本発明によれば、通常の下地めっき上に平
滑度が低い焼けめっきを施しているので、樹脂と該焼け
めっきの表面との物理的結合力が増大し、樹脂との間の
密着力に優れるリードフレームを提供しえた。
(Effects of the Invention) As described above, according to the present invention, since the burnt plating with low smoothness is applied on the normal base plating, the physical bonding force between the resin and the surface of the burnt plating increases, We were able to provide a lead frame with excellent adhesion to the resin.

また、焼けめっきは通常の下地めっき工程に引続いて施
すことができるので、別工程が増えるものでもなく、安
価なリードフレームが提供される。
Furthermore, since the baking plating can be applied subsequent to the normal base plating process, there is no need for an additional process, and an inexpensive lead frame can be provided.

以上、本発明について好適な実施例を挙げて種々説明し
たが、本発明はこの実施例に限定されるものではなく、
発明の精神を逸脱しない範囲内で多くの改変を施し得る
のはもちろんのことである。
The present invention has been variously explained above using preferred embodiments, but the present invention is not limited to these embodiments.
Of course, many modifications can be made without departing from the spirit of the invention.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図はリードフレームの概要を示す説明図である。 10・・・リードフレーム、  12・・・アウターリ
ード、  14・ ・ ・インナーリード、16・・・
ステージ、  18・・・ステージサポートバー、 2
0・・・レール部、 22・・・ダムバー。
FIG. 1 is an explanatory diagram showing an outline of a lead frame. 10... Lead frame, 12... Outer lead, 14... Inner lead, 16...
Stage, 18...Stage support bar, 2
0...Rail part, 22...Dam bar.

Claims (1)

【特許請求の範囲】 1、樹脂封止型電子部品用パッケージに用いるリードフ
レームにおいて、 少なくとも樹脂に密着する部位の全体もしくは一部分に
、通常のめっきを下地として焼けめっきを施してなるリ
ードフレーム。 2、下地めっきと焼けめっきとが同材質のものである特
許請求の範囲第1項記載のリードフレーム。
[Scope of Claims] 1. A lead frame used in a resin-sealed electronic component package, in which at least the whole or part of the portion that comes into close contact with the resin is burnt-plated using normal plating as a base. 2. The lead frame according to claim 1, wherein the base plating and the burnt plating are made of the same material.
JP30512886A 1986-12-20 1986-12-20 Lead frame Pending JPS63157452A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP30512886A JPS63157452A (en) 1986-12-20 1986-12-20 Lead frame

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP30512886A JPS63157452A (en) 1986-12-20 1986-12-20 Lead frame

Publications (1)

Publication Number Publication Date
JPS63157452A true JPS63157452A (en) 1988-06-30

Family

ID=17941430

Family Applications (1)

Application Number Title Priority Date Filing Date
JP30512886A Pending JPS63157452A (en) 1986-12-20 1986-12-20 Lead frame

Country Status (1)

Country Link
JP (1) JPS63157452A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002299538A (en) * 2001-03-30 2002-10-11 Dainippon Printing Co Ltd Lead frame and semiconductor package using the same
JP2006049698A (en) * 2004-08-06 2006-02-16 Denso Corp Resin sealed semiconductor device
JP2006526426A (en) * 2003-06-02 2006-11-24 エレクトロフォームド・ステンツ・インコーポレーテッド Method for forming a porous drug delivery layer
JP2011003565A (en) * 2009-06-16 2011-01-06 Hitachi Automotive Systems Ltd Electronic unit
JP2011071566A (en) * 2011-01-14 2011-04-07 Shinko Electric Ind Co Ltd Package component and semiconductor package

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002299538A (en) * 2001-03-30 2002-10-11 Dainippon Printing Co Ltd Lead frame and semiconductor package using the same
JP2006526426A (en) * 2003-06-02 2006-11-24 エレクトロフォームド・ステンツ・インコーポレーテッド Method for forming a porous drug delivery layer
JP2006049698A (en) * 2004-08-06 2006-02-16 Denso Corp Resin sealed semiconductor device
JP2011003565A (en) * 2009-06-16 2011-01-06 Hitachi Automotive Systems Ltd Electronic unit
JP2011071566A (en) * 2011-01-14 2011-04-07 Shinko Electric Ind Co Ltd Package component and semiconductor package

Similar Documents

Publication Publication Date Title
US4640436A (en) Hermetic sealing cover and a method of producing the same
US7408248B2 (en) Lead frame for semiconductor device
CN1196389C (en) Soldering of semiconductor chip to substrate
US4978052A (en) Semiconductor die attach system
US4700879A (en) Method for manufacturing semiconductor power modules with an insulated contruction
JPS63157452A (en) Lead frame
US5055909A (en) System for achieving desired bondlength of adhesive between a semiconductor chip package and a heatsink
US5200365A (en) System for achieving desired bondlength of adhesive between a semiconductor chip package and a heatsink
JP2501953B2 (en) Semiconductor device
US6404066B1 (en) Semiconductor device and process for manufacturing the same
JP2000068396A (en) Cover for hermetic seal
JP2716355B2 (en) Method for manufacturing semiconductor device
JPH03185754A (en) Semiconductor device
JP2972106B2 (en) Bonding method of lead to substrate
JPS6079732A (en) Semiconductor device
JPS58123744A (en) Manufacture of lead frame and semiconductor device
JPH06168986A (en) Tab tape and its manufacture
JPS6197842A (en) Semiconductor device
JPS61156825A (en) Semiconductor device
JP2750469B2 (en) Semiconductor package
JPH0794674A (en) Semiconductor device and fabrication thereof
JPS61251045A (en) Die-bonding for semiconductor chip
JPH04142042A (en) Manufacture of semiconductor device
JPH1126674A (en) Lead frame and semiconductor device using the same
JPH01149428A (en) Semiconductor device