JPS63151086A - ガリウム燐緑色発光ダイオ−ドの製造方法 - Google Patents

ガリウム燐緑色発光ダイオ−ドの製造方法

Info

Publication number
JPS63151086A
JPS63151086A JP61299138A JP29913886A JPS63151086A JP S63151086 A JPS63151086 A JP S63151086A JP 61299138 A JP61299138 A JP 61299138A JP 29913886 A JP29913886 A JP 29913886A JP S63151086 A JPS63151086 A JP S63151086A
Authority
JP
Japan
Prior art keywords
solution
layer
gap
temperature
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP61299138A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0525396B2 (enExample
Inventor
Koji Otsuka
康二 大塚
Masahiro Sato
雅裕 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanken Electric Co Ltd
Original Assignee
Sanken Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanken Electric Co Ltd filed Critical Sanken Electric Co Ltd
Priority to JP61299138A priority Critical patent/JPS63151086A/ja
Publication of JPS63151086A publication Critical patent/JPS63151086A/ja
Publication of JPH0525396B2 publication Critical patent/JPH0525396B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Led Devices (AREA)
JP61299138A 1986-12-16 1986-12-16 ガリウム燐緑色発光ダイオ−ドの製造方法 Granted JPS63151086A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61299138A JPS63151086A (ja) 1986-12-16 1986-12-16 ガリウム燐緑色発光ダイオ−ドの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61299138A JPS63151086A (ja) 1986-12-16 1986-12-16 ガリウム燐緑色発光ダイオ−ドの製造方法

Publications (2)

Publication Number Publication Date
JPS63151086A true JPS63151086A (ja) 1988-06-23
JPH0525396B2 JPH0525396B2 (enExample) 1993-04-12

Family

ID=17868610

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61299138A Granted JPS63151086A (ja) 1986-12-16 1986-12-16 ガリウム燐緑色発光ダイオ−ドの製造方法

Country Status (1)

Country Link
JP (1) JPS63151086A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5032539A (en) * 1988-07-08 1991-07-16 Kabushiki Kaisha Toshiba Method of manufacturing green light emitting diode

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5032539A (en) * 1988-07-08 1991-07-16 Kabushiki Kaisha Toshiba Method of manufacturing green light emitting diode

Also Published As

Publication number Publication date
JPH0525396B2 (enExample) 1993-04-12

Similar Documents

Publication Publication Date Title
JP2000012897A (ja) 窒素化合物半導体膜の形成方法および窒素化合物半導体素子
JPS6115577B2 (enExample)
JP2010283398A (ja) 窒化ガリウム半導体構造体の製造方法、半導体構造体の製造方法および半導体構造体
JPH06105797B2 (ja) 半導体基板及びその製造方法
CN214797333U (zh) 一种石墨烯掩膜生长氮化镓的衬底
WO2017190622A1 (zh) 一种 GaAs 基发光二极管及其制作方法
US4671829A (en) Manufacturing green light emitting diodes
JP3324102B2 (ja) エピタキシャルウェーハの製造方法
US20220259766A1 (en) Indium-gallium-nitride light emitting diodes with increased quantum efficiency
US8048786B2 (en) Method for fabricating single-crystalline substrate containing gallium nitride
JPH0525396B2 (enExample)
JP5131889B2 (ja) 窒化物系化合物半導体素子の製造方法
JPS63133619A (ja) 化合物半導体の液相エピタキシヤル成長法
JPH0536602A (ja) 六方晶半導体の結晶成長方法
JP2587493B2 (ja) ＧｕＰ緑色発光ダイオードの製造方法
JPH06342935A (ja) ＧａＰ純緑色発光素子基板
CN112349817B (zh) 一种氮化镓量子阱的外延生长方法
JP7133786B2 (ja) Ｉｉｉ族窒化物半導体およびその製造方法
CN102709398A (zh) 一种碲化锌/砷化镓异质外延层的制备方法
JP3097587B2 (ja) 発光半導体素子用エピタキシャルウェーハ
JPS6012794B2 (ja) 電気発光物質の製造方法
JPH11317542A (ja) エピタキシャルウエーハ及び発光ダイオード
JPH0657631B2 (ja) 液相エピタキシヤル成長法
JPH0669542A (ja) ＧａＰ系発光素子基板の製造方法
JPH01315174A (ja) 半導体発光装置