JPS63151016A - 横型気相成長装置 - Google Patents
横型気相成長装置Info
- Publication number
- JPS63151016A JPS63151016A JP29760186A JP29760186A JPS63151016A JP S63151016 A JPS63151016 A JP S63151016A JP 29760186 A JP29760186 A JP 29760186A JP 29760186 A JP29760186 A JP 29760186A JP S63151016 A JPS63151016 A JP S63151016A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- susceptor
- main body
- fork
- furnace main
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 238000001947 vapour-phase growth Methods 0.000 claims description 9
- 239000002994 raw material Substances 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- 239000007789 gas Substances 0.000 abstract description 32
- 239000013078 crystal Substances 0.000 abstract description 13
- 239000010453 quartz Substances 0.000 abstract description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 7
- 238000010438 heat treatment Methods 0.000 abstract description 5
- 230000006698 induction Effects 0.000 abstract description 4
- 239000012495 reaction gas Substances 0.000 abstract description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- 230000000717 retained effect Effects 0.000 abstract 1
- 238000007789 sealing Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 231100000989 no adverse effect Toxicity 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29760186A JPS63151016A (ja) | 1986-12-16 | 1986-12-16 | 横型気相成長装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29760186A JPS63151016A (ja) | 1986-12-16 | 1986-12-16 | 横型気相成長装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63151016A true JPS63151016A (ja) | 1988-06-23 |
| JPH0556854B2 JPH0556854B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1993-08-20 |
Family
ID=17848671
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP29760186A Granted JPS63151016A (ja) | 1986-12-16 | 1986-12-16 | 横型気相成長装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63151016A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60193323A (ja) * | 1984-03-15 | 1985-10-01 | Nec Corp | 半導体気相成長装置 |
| JPS6266622A (ja) * | 1985-09-19 | 1987-03-26 | Matsushita Electric Ind Co Ltd | 気相成長装置 |
-
1986
- 1986-12-16 JP JP29760186A patent/JPS63151016A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60193323A (ja) * | 1984-03-15 | 1985-10-01 | Nec Corp | 半導体気相成長装置 |
| JPS6266622A (ja) * | 1985-09-19 | 1987-03-26 | Matsushita Electric Ind Co Ltd | 気相成長装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0556854B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1993-08-20 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |