JPS63150158A - 端面研削盤切込み装置 - Google Patents
端面研削盤切込み装置Info
- Publication number
- JPS63150158A JPS63150158A JP61294351A JP29435186A JPS63150158A JP S63150158 A JPS63150158 A JP S63150158A JP 61294351 A JP61294351 A JP 61294351A JP 29435186 A JP29435186 A JP 29435186A JP S63150158 A JPS63150158 A JP S63150158A
- Authority
- JP
- Japan
- Prior art keywords
- grinding
- wafer
- speed
- motor
- grindstone
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 37
- 239000010432 diamond Substances 0.000 claims abstract description 37
- 239000004065 semiconductor Substances 0.000 claims abstract description 30
- 238000000034 method Methods 0.000 claims abstract description 28
- 239000006061 abrasive grain Substances 0.000 claims description 35
- 238000005520 cutting process Methods 0.000 claims description 32
- 150000001875 compounds Chemical class 0.000 claims description 25
- 238000012545 processing Methods 0.000 claims description 13
- 238000003754 machining Methods 0.000 claims description 10
- 238000005452 bending Methods 0.000 claims description 9
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 5
- 230000003247 decreasing effect Effects 0.000 abstract description 4
- 235000012431 wafers Nutrition 0.000 description 91
- 239000011230 binding agent Substances 0.000 description 10
- 230000007423 decrease Effects 0.000 description 8
- 239000002245 particle Substances 0.000 description 8
- 239000007788 liquid Substances 0.000 description 7
- 239000011347 resin Substances 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- 239000002699 waste material Substances 0.000 description 6
- 238000002474 experimental method Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000007767 bonding agent Substances 0.000 description 3
- 239000000945 filler Substances 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 230000020169 heat generation Effects 0.000 description 3
- 238000012805 post-processing Methods 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- 241000257465 Echinoidea Species 0.000 description 2
- 239000003082 abrasive agent Substances 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 238000007781 pre-processing Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- 239000002775 capsule Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000007779 soft material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Landscapes
- Grinding Of Cylindrical And Plane Surfaces (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61294351A JPS63150158A (ja) | 1986-12-10 | 1986-12-10 | 端面研削盤切込み装置 |
| DE8787118077T DE3771857D1 (de) | 1986-12-08 | 1987-12-07 | Flaechenschleifmaschine. |
| EP87118077A EP0272531B1 (en) | 1986-12-08 | 1987-12-07 | Surface grinding machine |
| US07/129,487 US5035087A (en) | 1986-12-08 | 1987-12-07 | Surface grinding machine |
| CA000553778A CA1307116C (en) | 1986-12-08 | 1987-12-08 | Surface grinding machine |
| KR1019870013953A KR960015957B1 (ko) | 1986-12-08 | 1987-12-08 | 표면 연삭기 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61294351A JPS63150158A (ja) | 1986-12-10 | 1986-12-10 | 端面研削盤切込み装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63150158A true JPS63150158A (ja) | 1988-06-22 |
| JPH0329548B2 JPH0329548B2 (enrdf_load_stackoverflow) | 1991-04-24 |
Family
ID=17806584
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61294351A Granted JPS63150158A (ja) | 1986-12-08 | 1986-12-10 | 端面研削盤切込み装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63150158A (enrdf_load_stackoverflow) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0475858A (ja) * | 1990-07-17 | 1992-03-10 | Sano Fuji Koki Kk | 光学ガラスの研摩装置 |
| JP2001138219A (ja) * | 1999-11-19 | 2001-05-22 | Disco Abrasive Syst Ltd | 研磨装置 |
| WO2009107567A1 (ja) * | 2008-02-27 | 2009-09-03 | 住友電気工業株式会社 | 窒化物半導体ウエハーの加工方法と窒化物半導体ウエハー及び窒化物半導体デバイスの製造方法並びに窒化物半導体デバイス |
| JP2009231833A (ja) * | 2008-02-27 | 2009-10-08 | Sumitomo Electric Ind Ltd | 窒化物半導体ウエハ− |
| JP2010046743A (ja) * | 2008-08-21 | 2010-03-04 | Disco Abrasive Syst Ltd | ウエーハの研削方法 |
| JP2013126699A (ja) * | 2011-12-19 | 2013-06-27 | Disco Corp | 研削方法 |
| WO2014002624A1 (ja) * | 2012-06-27 | 2014-01-03 | コマツＮｔｃ株式会社 | 研削加工装置およびその制御方法 |
| JP2017056516A (ja) * | 2015-09-16 | 2017-03-23 | 光洋機械工業株式会社 | ワークの平面研削方法及び平面研削盤 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54132893A (en) * | 1978-04-04 | 1979-10-16 | Inoue Japax Res Inc | Polishing device |
-
1986
- 1986-12-10 JP JP61294351A patent/JPS63150158A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54132893A (en) * | 1978-04-04 | 1979-10-16 | Inoue Japax Res Inc | Polishing device |
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0475858A (ja) * | 1990-07-17 | 1992-03-10 | Sano Fuji Koki Kk | 光学ガラスの研摩装置 |
| JP2001138219A (ja) * | 1999-11-19 | 2001-05-22 | Disco Abrasive Syst Ltd | 研磨装置 |
| US8101523B2 (en) | 2008-02-27 | 2012-01-24 | Sumitomo Electric Industries, Ltd. | Method of processing of nitride semiconductor wafer, nitride semiconductor wafer, method of producing nitride semiconductor device and nitride semiconductor device |
| US8183669B2 (en) | 2008-02-27 | 2012-05-22 | Sumitomo Electric Industries, Ltd. | Nitride semiconductor wafer having a chamfered edge |
| JP2009231814A (ja) * | 2008-02-27 | 2009-10-08 | Sumitomo Electric Ind Ltd | 窒化物半導体ウエハ−加工方法 |
| JP2010010705A (ja) * | 2008-02-27 | 2010-01-14 | Sumitomo Electric Ind Ltd | 窒化物半導体ウエハー及び窒化物半導体デバイスの製造方法並びに窒化物半導体デバイス |
| JP2009231833A (ja) * | 2008-02-27 | 2009-10-08 | Sumitomo Electric Ind Ltd | 窒化物半導体ウエハ− |
| US7872331B2 (en) | 2008-02-27 | 2011-01-18 | Sumitomo Electric Industries, Ltd. | Nitride semiconductor wafer |
| WO2009107567A1 (ja) * | 2008-02-27 | 2009-09-03 | 住友電気工業株式会社 | 窒化物半導体ウエハーの加工方法と窒化物半導体ウエハー及び窒化物半導体デバイスの製造方法並びに窒化物半導体デバイス |
| JP2010046743A (ja) * | 2008-08-21 | 2010-03-04 | Disco Abrasive Syst Ltd | ウエーハの研削方法 |
| JP2013126699A (ja) * | 2011-12-19 | 2013-06-27 | Disco Corp | 研削方法 |
| WO2014002624A1 (ja) * | 2012-06-27 | 2014-01-03 | コマツＮｔｃ株式会社 | 研削加工装置およびその制御方法 |
| JP2014004672A (ja) * | 2012-06-27 | 2014-01-16 | Komatsu Ntc Ltd | 研削加工装置およびその制御方法 |
| JP2017056516A (ja) * | 2015-09-16 | 2017-03-23 | 光洋機械工業株式会社 | ワークの平面研削方法及び平面研削盤 |
| KR20170033233A (ko) * | 2015-09-16 | 2017-03-24 | 고요 기카이 고교 가부시키가이샤 | 워크의 평면 연삭 방법 및 평면 연삭반 |
| CN106881639A (zh) * | 2015-09-16 | 2017-06-23 | 光洋机械工业株式会社 | 工件的平面磨削方法和平面磨床 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0329548B2 (enrdf_load_stackoverflow) | 1991-04-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |