JPS63130621A - Epoxy resin composition for sealing semiconductor device - Google Patents
Epoxy resin composition for sealing semiconductor deviceInfo
- Publication number
- JPS63130621A JPS63130621A JP61276635A JP27663586A JPS63130621A JP S63130621 A JPS63130621 A JP S63130621A JP 61276635 A JP61276635 A JP 61276635A JP 27663586 A JP27663586 A JP 27663586A JP S63130621 A JPS63130621 A JP S63130621A
- Authority
- JP
- Japan
- Prior art keywords
- epoxy resin
- chelate compound
- resin composition
- mold release
- internal mold
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 28
- 239000003822 epoxy resin Substances 0.000 title claims abstract description 24
- 229920000647 polyepoxide Polymers 0.000 title claims abstract description 24
- 239000004065 semiconductor Substances 0.000 title claims description 19
- 238000007789 sealing Methods 0.000 title description 7
- 239000013522 chelant Substances 0.000 claims abstract description 28
- 150000001875 compounds Chemical class 0.000 claims abstract description 23
- 229910052751 metal Inorganic materials 0.000 claims abstract description 13
- 239000002184 metal Substances 0.000 claims abstract description 13
- 239000006082 mold release agent Substances 0.000 claims description 17
- 238000002156 mixing Methods 0.000 abstract description 8
- 229910000679 solder Inorganic materials 0.000 abstract description 8
- 239000003795 chemical substances by application Substances 0.000 abstract description 7
- 238000007654 immersion Methods 0.000 abstract description 5
- 239000004203 carnauba wax Substances 0.000 abstract description 3
- 235000013869 carnauba wax Nutrition 0.000 abstract description 3
- RNFJDJUURJAICM-UHFFFAOYSA-N 2,2,4,4,6,6-hexaphenoxy-1,3,5-triaza-2$l^{5},4$l^{5},6$l^{5}-triphosphacyclohexa-1,3,5-triene Chemical compound N=1P(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP=1(OC=1C=CC=CC=1)OC1=CC=CC=C1 RNFJDJUURJAICM-UHFFFAOYSA-N 0.000 abstract description 2
- 239000003054 catalyst Substances 0.000 abstract description 2
- 239000003086 colorant Substances 0.000 abstract description 2
- 239000003063 flame retardant Substances 0.000 abstract description 2
- 239000011256 inorganic filler Substances 0.000 abstract 1
- 229910003475 inorganic filler Inorganic materials 0.000 abstract 1
- 239000001993 wax Substances 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 8
- 229920005989 resin Polymers 0.000 description 8
- 239000011347 resin Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 239000008188 pellet Substances 0.000 description 6
- 229920003986 novolac Polymers 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000035515 penetration Effects 0.000 description 3
- 239000005360 phosphosilicate glass Substances 0.000 description 3
- 230000035939 shock Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- -1 stearic acid Chemical class 0.000 description 3
- SYMYWDHCQHTNJC-UHFFFAOYSA-J 3-oxobutanoate;zirconium(4+) Chemical compound [Zr+4].CC(=O)CC([O-])=O.CC(=O)CC([O-])=O.CC(=O)CC([O-])=O.CC(=O)CC([O-])=O SYMYWDHCQHTNJC-UHFFFAOYSA-J 0.000 description 2
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 235000014113 dietary fatty acids Nutrition 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 150000002148 esters Chemical class 0.000 description 2
- YRMWCMBQRGFNIZ-UHFFFAOYSA-N ethyl 3-oxobutanoate;zirconium Chemical compound [Zr].CCOC(=O)CC(C)=O YRMWCMBQRGFNIZ-UHFFFAOYSA-N 0.000 description 2
- 239000000194 fatty acid Substances 0.000 description 2
- 229930195729 fatty acid Natural products 0.000 description 2
- 150000004665 fatty acids Chemical class 0.000 description 2
- 238000009472 formulation Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- QWVGKYWNOKOFNN-UHFFFAOYSA-N o-cresol Chemical compound CC1=CC=CC=C1O QWVGKYWNOKOFNN-UHFFFAOYSA-N 0.000 description 2
- NFHFRUOZVGFOOS-UHFFFAOYSA-N palladium;triphenylphosphane Chemical compound [Pd].C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 NFHFRUOZVGFOOS-UHFFFAOYSA-N 0.000 description 2
- 150000002989 phenols Chemical class 0.000 description 2
- LYPJRFIBDHNQLY-UHFFFAOYSA-J 2-hydroxypropanoate;zirconium(4+) Chemical compound [Zr+4].CC(O)C([O-])=O.CC(O)C([O-])=O.CC(O)C([O-])=O.CC(O)C([O-])=O LYPJRFIBDHNQLY-UHFFFAOYSA-J 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 235000021355 Stearic acid Nutrition 0.000 description 1
- 241000609666 Tuber aestivum Species 0.000 description 1
- BNAUAOZECIYBMC-UHFFFAOYSA-N [Zr].C(C(O)C)(=O)OCC Chemical compound [Zr].C(C(O)C)(=O)OCC BNAUAOZECIYBMC-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000005282 brightening Methods 0.000 description 1
- CJZGTCYPCWQAJB-UHFFFAOYSA-L calcium stearate Chemical compound [Ca+2].CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O CJZGTCYPCWQAJB-UHFFFAOYSA-L 0.000 description 1
- 239000008116 calcium stearate Substances 0.000 description 1
- 235000013539 calcium stearate Nutrition 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical class OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000000748 compression moulding Methods 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 239000007822 coupling agent Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000004925 denaturation Methods 0.000 description 1
- 230000036425 denaturation Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000010410 dusting Methods 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000002334 glycols Chemical class 0.000 description 1
- 150000002366 halogen compounds Chemical class 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 239000003446 ligand Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000002075 main ingredient Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012778 molding material Substances 0.000 description 1
- 239000012170 montan wax Substances 0.000 description 1
- 239000004843 novolac epoxy resin Substances 0.000 description 1
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 description 1
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 239000011342 resin composition Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 239000008117 stearic acid Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
- JSPLKZUTYZBBKA-UHFFFAOYSA-N trioxidane Chemical class OOO JSPLKZUTYZBBKA-UHFFFAOYSA-N 0.000 description 1
- KAKZBPTYRLMSJV-UHFFFAOYSA-N vinyl-ethylene Natural products C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 description 1
- XOOUIPVCVHRTMJ-UHFFFAOYSA-L zinc stearate Chemical compound [Zn+2].CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O XOOUIPVCVHRTMJ-UHFFFAOYSA-L 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/0091—Complexes with metal-heteroatom-bonds
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Epoxy Resins (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の目的〕
（産業上の利用分野）
本発明は、半導体装置封止用エポキシ樹脂に関し、更に
詳しくは優れた成形性を有し、リードフレーム及び素子
との密着性が良好で、ハンダ浸漬後でも耐湿性が良好な
硬化物を与える、半導体装置封止用エポキシ樹脂組成物
に関する。Detailed Description of the Invention [Objective of the Invention] (Industrial Field of Application) The present invention relates to an epoxy resin for encapsulating semiconductor devices, and more specifically, the present invention relates to an epoxy resin for encapsulating semiconductor devices, and more specifically, it has excellent moldability and has good adhesion to lead frames and elements. The present invention relates to an epoxy resin composition for encapsulating a semiconductor device, which provides a cured product having good properties and good moisture resistance even after being immersed in solder.
（従来の技術）
近年、半導体装置の封正に関する分野においては、半導
体素子の高集積化に伴って素子上の各種機能単位の微細
化、素子ペレット自体の大型化が急速に進んでいる。ま
た、実装面においても表面実装指向の要求が高まる傾向
にあり、高ＩＡｉ （２６０℃）ハンダ槽に数秒浸漬後
耐湿性を保障する封止材料であることなど、素子ペレッ
トの変化、表面実装化により封止用樹脂も従来の封止用
樹脂では耐熱性及び耐熱衝撃性等の要求が満足できなく
なってきた。(Prior Art) In recent years, in the field of encapsulation of semiconductor devices, with the increase in the degree of integration of semiconductor devices, various functional units on the device have become finer and the size of the device pellet itself has rapidly progressed. In addition, in terms of mounting, there is a tendency for demands for surface mounting to increase, and changes in element pellets, such as sealing materials that guarantee moisture resistance after being immersed in a high IAi (260°C) solder bath for several seconds, and surface mounting. As a result, conventional sealing resins are no longer able to satisfy requirements such as heat resistance and thermal shock resistance.
従来、半導体装置の封止用樹脂として用いられている、
フェノールノボラック樹脂で硬化させたエポキシ樹脂組
成物は耐湿性、高温電気特性、成形性などが優れ、モー
ルド用樹脂の主流となっている。Traditionally used as a sealing resin for semiconductor devices,
Epoxy resin compositions cured with phenol novolak resins have excellent moisture resistance, high-temperature electrical properties, moldability, etc., and have become the mainstream resin for molding.
しかし、この系統の樹脂組成物を用いて大型でかつ微細
な表面構造を有する素子ペレットを封止すると、素子ペ
レット表面のアルミニウム（ＡＩ）パターンを保護する
ための被覆材であるリンケイ酸ガラス（ＰＳＧ）［や輩
化ケイ素（ＳｉＮ）膜に割れを生じたり、素子ペレット
に割れを生じたりする。However, when this type of resin composition is used to seal a large device pellet with a fine surface structure, phosphosilicate glass (PSG), which is a coating material to protect the aluminum (AI) pattern on the surface of the device pellet, is sealed. ) [Cracks may occur in the silicon (SiN) film or in the element pellet.
特に冷熱サイクル試験を実施した場合に、その傾向が非
常に大きい、その結果、ペレｙト割れによる素子特性の
不良や保護膜の割れに起因するＡｌパターンの腐食によ
り不良などを生じる。In particular, when a thermal cycle test is carried out, this tendency is very large, resulting in defects in element characteristics due to pellet cracks and defects due to corrosion of the Al pattern due to cracks in the protective film.
また、表面実装の点から２６０℃ハンダ槽に数秒浸漬さ
れた場合には、チップまたはリードと樹脂との界面が開
く樹脂にクラックが発生するなど、特に吸湿処理した場
合にその傾向が大きい。その結果、素子特性の不良の原
因になる。Furthermore, from the point of view of surface mounting, when immersed in a 260° C. solder bath for several seconds, cracks occur in the resin where the interface between the chip or lead and the resin opens, and this tendency is particularly strong when moisture absorption treatment is performed. As a result, it becomes a cause of defective device characteristics.
その対策としては、封止樹脂の内部封入物に対する応力
を小さくシ、リードとの密着性を大きくし、かつ封止樹
脂と素子上のＰＳＧ １！ｌＩやＳｉＮ膜などのガラス
膜との密着性も大きくする必要がある。As a countermeasure, the stress on the internal sealing resin is reduced, the adhesion with the leads is increased, and the PSG 1! on the sealing resin and the element is increased. It is also necessary to increase the adhesion with glass films such as lI and SiN films.
しかも、硬化物については、吸湿量を小さくし表子表面
のＡＪパターンの腐食を極力防止するために加水分解性
のハロゲン化合物、特に塩素濃度を低くおさえ、かつ吸
湿時や高温時の電気絶縁性能を高レベルに保つ必要があ
る。Moreover, in order to reduce the amount of moisture absorbed and prevent corrosion of the AJ pattern on the front surface as much as possible, the cured product must contain hydrolyzable halogen compounds, especially chlorine, at a low concentration, and has electrical insulation performance when moisture is absorbed or at high temperatures. need to be maintained at a high level.
そこで耐熱衝撃性改良の点から、フェノールノボラック
樹脂硬化のエポキシ封止樹脂に低応力を付与する成分と
して、末端官能性の液状ゴム（特開昭５７−４２７２０
号公報参照）、エポキシ化ブタジェン共重合体（特開昭
５７−１２０号公報参照）、アルキルフェノール変性フ
ェノールノボラックエポキシ樹脂（特開昭５９−３０８
２０号公報参照）、シロキサン変性フェノールノボラッ
クエボキシ樹脂（特開昭５８−２１４１７号公報及び同
５８−３４８２５号公報参照）及び線状オルガノポリシ
ロキサンブロック硬化物の粉末（特開昭５８−２１９２
１８号公報参照）などで変性する手法が提案されている
。Therefore, from the point of view of improving thermal shock resistance, terminally functional liquid rubber (Japanese Patent Application Laid-open No. 57-42720
(see JP-A-57-120), epoxidized butadiene copolymer (see JP-A-57-120), alkylphenol-modified phenol novolak epoxy resin (JP-A-59-308)
20), siloxane-modified phenol novolac epoxy resin (see JP-A-58-21417 and JP-A-58-34825), and powder of linear organopolysiloxane block cured product (JP-A-58-2192)
A method of denaturation has been proposed, such as in Japanese Patent Publication No. 18).
（発明が解決しようとする問題点）
しかしながら、上記した組成物はいずれもＩＪ −ドフ
レーム及び素子との密着性を兼ね備えた材料とは言えず
、２６０℃半田浸漬した場合には、水分の浸入が大きく
、元号な耐湿性を備えていない。(Problems to be Solved by the Invention) However, none of the above-mentioned compositions can be said to have good adhesion to IJ-deframes and elements, and when immersed in solder at 260°C, moisture infiltrates. It is large and does not have the original moisture resistance.
また、一般的には低応力手法は低応力を付与する成分に
よって、溶融時の粘度が増すためワイヤー流れを生じる
。成形性が低下するなどの種々の問題点があった。Additionally, in general, the low-stress method causes wire flow because the viscosity during melting increases due to the component that imparts low stress. There were various problems such as reduced moldability.
（発明が解決するための手段）
本発明者らは、上記した問題点を解決すべく鋭意研究を
重ねた結果、ワックスを変性することにより、リードフ
レーム及び素子との密着性が優れ２６０℃半田浸ａ後で
も優れた密着性を有し、吸湿量が小さく、成形性の良好
な半導体装置封止用エポキシ樹脂を完成するに至りだ。(Means for Solving the Invention) As a result of extensive research to solve the above-mentioned problems, the present inventors have found that by modifying the wax, it has excellent adhesion to lead frames and elements and can be soldered at 260°C. We have now completed an epoxy resin for encapsulating semiconductor devices that has excellent adhesion even after immersion, has low moisture absorption, and has good moldability.
すなわち、本発明の半導体装置封止用エポキシ樹脂組成
物は、内部１ｉ１！塵剤を含有するエポキシ樹脂組成物
において
＜８） 内部離型剤
（ｂ） 金属キレート化合物
から構成される化合物を、あらかじめ予備混合し内部離
型剤として添加することを特徴とするものであり、さら
に金属キレート化合物がＺｒ−キレ−） 、 Ｔｉキレ
ート、Ｍキレート化合物から選ばれた少なくとも１ｍを
用いることを特徴とする半導体装置封止用エポキシ樹脂
組成物である。That is, the epoxy resin composition for encapsulating a semiconductor device of the present invention has an internal 1i1! In an epoxy resin composition containing a dusting agent <8) Internal mold release agent (b) A compound composed of a metal chelate compound is premixed in advance and added as an internal mold release agent, The epoxy resin composition for encapsulating a semiconductor device is further characterized in that the metal chelate compound is at least 1 m selected from Zr-chelate, Ti chelate, and M chelate compounds.
本発明に係る内部離型剤としては、炭化水素系ワックス
、脂肪酸系ワックス、脂肪酸アミド系ワックス、エステ
ル系ワックス などが挙げられ、具体例としては、耐湿
性の点からカルナバワックス、モンタンワックスなどの
エステル系ワックスが好ましく、その他にステアリン酸
、バルミチン酸、ステアリン酸亜鉛、ステアリン酸カル
シウムなどの長鎖カルボン酸及びそれらの金属塩、低分
子量ポリエチレンワックスなどが挙げられ、またこれら
のワックスを併用したものであっても良い。Examples of the internal mold release agent according to the present invention include hydrocarbon waxes, fatty acid waxes, fatty acid amide waxes, ester waxes, etc. Specific examples include carnauba wax, montan wax, etc. from the viewpoint of moisture resistance. Ester waxes are preferred, and other waxes include long-chain carboxylic acids such as stearic acid, valmitic acid, zinc stearate, and calcium stearate, metal salts thereof, and low molecular weight polyethylene waxes. It's okay.
本発明に係る金属キレート化合物としては、Ｚｒキレ−
） 、 Ｔｉキレート、Ａｌｌキレート化合物から選ば
れ、Ｚｒキレート化合物としては例えば、テトラキスア
セチルアセトナトシルコニウム、モノブトキシトリスア
セチルアセトナトシルコニウム。The metal chelate compound according to the present invention includes Zr chelate compound.
), Ti chelate, and All chelate compounds, and examples of the Zr chelate compound include tetrakisacetylacetonatosirconium and monobutoxytrisacetylacetonatosirconium.
ジブトキシビスアセチルアセトナトジルコニウム。Dibutoxybisacetylacetonatozirconium.
トリブトキシアセチルアセトナトシルコニウム。Tributoxyacetylacetonatosilconium.
テトラキスエチルアセチルアセテートジルコニウム、ブ
トキシトリスエチルアセチルアセテートジルコニウム、
ブトキシビスエチルアセチルアセテードジルコニウム、
トリブトキシモノエチルアセチルアセテートジルコニウ
ム、テトラキスエチルラクテートジルコニウム、ジブト
キシビスエチルラクテートジルコニウム、ビスアセチル
アセトナトビスエチルアセチルアセトナトシルコニウム
。Tetrakis ethyl acetylacetate zirconium, butoxytris ethyl acetylacetate zirconium,
butoxybisethyl acetylacetate zirconium,
Tributoxymonoethyl acetylacetate zirconium, tetrakis ethyl lactate zirconium, dibutoxybisethyl lactate zirconium, bisacetylacetonatobisethylacetylacetonatozirconium.
モノアセチルアセトナトトリスエチルアセチルアセトナ
トシルコニウム、モノアセチルアセトナトビスエチルア
セチルアセトナトブトキシジルコニ。Monoacetylacetonatotrisethylacetylacetonatosilconium, monoacetylacetonatobisethylacetylacetonatobutoxyzirconi.
ウム、ビスアセチルアセトナトビスエチルラクトナトジ
ルコニウムなどが挙げられる。um, bisacetylacetonatobisethyllactonatozirconium, and the like.
Ｔｉキレート、Ｍキレート化合物としては、β−ジケト
ン、ヒドロキシカルボン酸、ケトエステル、ケトアルコ
ール、グリコールなどの配位子を有した化合物が挙げら
れる。Examples of Ti chelate and M chelate compounds include compounds having ligands such as β-diketones, hydroxycarboxylic acids, ketoesters, ketoalcohols, and glycols.
前記した金属キレートの中でも、耐湿性及びワックスと
の相溶性の点からＺｒ−キレート化合物が特に好ましい
。内部離型剤と金属キレート化合物の予備混合方法とし
ては、内部離型剤の融点以上の温度で混合する方法が好
ましく、均一に相溶した状態で用いられる。Among the metal chelates described above, Zr-chelate compounds are particularly preferred from the viewpoint of moisture resistance and compatibility with wax. As a method for premixing the internal mold release agent and the metal chelate compound, a method of mixing at a temperature equal to or higher than the melting point of the internal mold release agent is preferable, and the mixture is used in a uniformly compatible state.
内部離型剤と金属キレート化合物の混合割合は、内部離
型剤に対して金属キレートが０．１〜５０！ｊｉｌチで
用いられ、好ましくは０．５〜３０重量％の範囲で予備
混合し、配合されるのが好ましい。The mixing ratio of the internal mold release agent and the metal chelate compound is 0.1 to 50 of the metal chelate to the internal mold release agent! It is preferable to premix and blend, preferably in a range of 0.5 to 30% by weight.
得られた内部離型剤と金属キレート化合物の混合物は、
成形材料中の０．Ｏ１〜３重ｉｔ％の範囲で用いられ、
好ましくは０．１〜１重量％の範囲である。The resulting mixture of internal mold release agent and metal chelate compound is
0.0 in the molding material. It is used in the range of O1-3 it%,
Preferably it is in the range of 0.1 to 1% by weight.
配合割合が多すぎる場合は、充分な耐湿性が得られず、
また少なすぎる場合には金型からの離型性が低下する。If the blending ratio is too high, sufficient moisture resistance may not be obtained.
Furthermore, if the amount is too small, the releasability from the mold will decrease.
本発明の半導体装置対土用エポキシ樹脂組成物は前記し
た内部離型剤の他に、主剤としてのエポキシ樹脂、硬化
剤、硬化触媒、難燃剤の他に、公知の無機質光てん剤及
び表面処理剤１着色剤を配合されることにより達成され
、また各種低応力付与剤を添加しても良い。In addition to the above-mentioned internal mold release agent, the epoxy resin composition for semiconductor devices of the present invention contains an epoxy resin as a main ingredient, a curing agent, a curing catalyst, a flame retardant, and a known inorganic brightening agent and surface treatment. This is achieved by adding a colorant to Agent 1, and various low stress imparting agents may also be added.
本発明の半導体装置対土用エポキシ樹脂組成物の製造方
法としては、加熱ロールによる溶融混練。The method for producing the epoxy resin composition for semiconductor devices of the present invention includes melt-kneading using heated rolls.
ニーダ−による溶融混線、押出機による溶融混線。Melt mixing by a kneader, melt mixing by an extruder.
微粉砕後の特殊混合機による混合及びこれらの各方法の
適宜な組合せによつて容易に製造することができる。It can be easily produced by mixing with a special mixer after pulverization and by appropriately combining these methods.
なお、本発明の組成物を用いて封止した樹脂封止型半導
体装置は、常用の方法を用いて容易に製造することがで
きる。この封止の最も一般的な方法としては、低圧トラ
ンスファー成形法があるがインジ晶りシ層ン成形、圧縮
成形、注型などによる封止も可能である。エポキシ樹脂
組成物は封止。Note that a resin-encapsulated semiconductor device sealed using the composition of the present invention can be easily manufactured using a commonly used method. The most common method for this sealing is low-pressure transfer molding, but sealing by indica crystal layer molding, compression molding, casting, etc. is also possible. The epoxy resin composition is sealed.
の際に加熱して硬化させ、最終的にはこの組成物の硬化
物によって封止された樹脂封止型半導体装置を得ること
ができる。硬化に際しては、１５０℃以上に加熱するこ
とが望ましい。At this time, the composition is heated and cured, and finally a resin-sealed semiconductor device sealed with a cured product of this composition can be obtained. During curing, it is desirable to heat to 150° C. or higher.
以下において、実施例及び比較例を掲げ、本発明を更に
詳しく説明する。EXAMPLES Below, the present invention will be explained in more detail with reference to Examples and Comparative Examples.
なお、実施例及び比較例中、「部」は全て「重量部」を
示す。In addition, in Examples and Comparative Examples, all "parts" indicate "parts by weight."
（実施例）
実施例−１゜
浴融シリカ（東芝セラミックス製）７２部と三酸化アン
宇モン２．０部にカップリング剤としてＡ−１８７（日
本ユニカー製）を０．４部添加してヘンシェルミキサー
で攪拌し、次にオルトクレゾールノボラック型エポキシ
樹脂（住友化学ＥＳＣＮ−１９５ＸＬ）１６部、フェノ
ールノボラック樹脂（昭和ユニオン製Ｂ几Ｇ−５５８）
８部、臭素化エポキシ樹脂２部、硬化促進剤としてト
リフ、ニルホスフィン０．２部、カーボン粉末０．３部
、及び表−１の内部離型剤０．３部を混合し、７０〜１
００℃の二軸ロールで混合混線後冷却し、粉砕後タブレ
ット化し、本発明の半導体装置対土用エポキシ樹脂を得
た。(Example) Example-1 0.4 part of A-187 (manufactured by Nippon Unicar) was added as a coupling agent to 72 parts of bath fused silica (manufactured by Toshiba Ceramics) and 2.0 parts of ammonium trioxide. Stir with a Henschel mixer, then add 16 parts of ortho-cresol novolac type epoxy resin (Sumitomo Chemical ESCN-195XL) and phenol novolac resin (B-box G-558 manufactured by Showa Union).
8 parts of brominated epoxy resin, 0.2 parts of truffle as a curing accelerator, 0.2 parts of nilphosphine, 0.3 parts of carbon powder, and 0.3 parts of the internal mold release agent shown in Table 1 were mixed, and 70 to 1
The mixture was mixed with a twin-screw roll at 00°C, cooled, crushed, and then tableted to obtain an epoxy resin for use in semiconductor devices of the present invention.
実施例−２〜６
実施例１の内部離型剤を表１の配合表に従って調製゛し
配合した以外は実施例と同一の組成で配合から製造まで
行ない、半導体装置封止用エポキシ樹脂を得た。Examples 2 to 6 The internal mold release agent of Example 1 was prepared and blended according to the formulation table in Table 1, but the same composition as in the example was used from formulation to production to obtain an epoxy resin for encapsulating semiconductor devices. Ta.
比較例−１゜
実施例の内部離型剤を用いず、カルナバワックス０．３
部を配合した以外は実施例１と同一の組成で配合から製
造まで行ない、比較試料とした。Comparative Example-1゜Carnauba wax 0.3 without using the internal mold release agent of Example
A comparative sample was prepared using the same composition as in Example 1, except for the addition of 50% by weight.
比較例−２゜
実施例の内部離型剤と同量のカルナバワックス及びＺｒ
−キレートを予備混合せず添加配合し、実施例１と同一
の組成で配合から製造まで行ない、比較試料とした。Comparative Example-2゜ Same amount of carnauba wax and Zr as the internal mold release agent of Example
- Chelate was added and blended without premixing, and the same composition as in Example 1 was carried out from blending to production to serve as a comparative sample.
上記した各試料を、 ＤＩＰ型１６ビン成形金型を用い
て成型し、１７５℃８時間アフターキーアー後各種テス
トを実施した。Each of the above-mentioned samples was molded using a DIP type 16-bin mold, and various tests were conducted after after-keying at 175° C. for 8 hours.
プレッシャークツカー
レッドインクテスト： ＤＩＰ型１６ピン成形品をレッ
ドインク入りの２．５気圧プレツシヤークツカーに入れ
、８時間後のリードへのインクの浸入距離の測定を行っ
た。Pressure pump red ink test: A DIP type 16-pin molded product was placed in a 2.5 atm pressure pressure car containing red ink, and after 8 hours, the distance of ink penetration into the leads was measured.
半田浸漬
レッドインクテスト： ＤＩＰ型１６ピン成形品を２６
０℃半田槽に２０秒間浸漬後、プレッシャークツカルレ
ッドインクテスト２時間後のリードへのインクの浸入距
離の測定を行なった。Solder immersion red ink test: 26 DIP type 16 pin molded products
After 20 seconds of immersion in a 0° C. solder bath and 2 hours of pressure red ink test, the ink penetration distance into the lead was measured.
表−１の結果より明らかなように、実施例の本発明品は
比較品に比べて改良された内部離型剤の効果が大であり
、成形性が低下することなく、耐湿性が優れ、プレッシ
ャークツカーレッドインクテストにおいてもレッドイン
クの浸入をおさえることがわかる。また、半田浸漬後の
レッドインクテストに８いても比較例との優位差が顕著
であり、すばらしい性能を有することがわかる。As is clear from the results in Table 1, the products of the present invention in Examples have a greater effect of the improved internal mold release agent than the comparative products, and have excellent moisture resistance without deteriorating moldability. It can be seen that the red ink penetration can be suppressed even in the pressure tester red ink test. Moreover, even if the red ink test after solder immersion was 8, the difference in superiority from the comparative example was remarkable, and it can be seen that it has excellent performance.
本発明品は、半導体封止に関する分野の高集積度化に伴
って要求される熱衝撃性、高耐湿性、表面実装指向に有
効な手段であり、本発明品の工業的価値はきわめて大き
い。The product of the present invention is an effective means for achieving thermal shock resistance, high moisture resistance, and surface mounting, which are required as the degree of integration increases in the field of semiconductor encapsulation, and the industrial value of the product of the present invention is extremely large.
Claims (2)
て （ａ）内部離型剤 （ｂ）金属キレート化合物 から構成される化合物を、あらかじめ予備混合し内部離
型剤として添加することを特徴とする半導体装置封止用
エポキシ樹脂組成物。(1) In an epoxy resin composition containing an internal mold release agent, a compound consisting of (a) an internal mold release agent (b) a metal chelate compound is premixed in advance and added as an internal mold release agent. An epoxy resin composition for encapsulating semiconductor devices.
ート、Ａｌキレート化合物から選ばれた少なくとも１種
を用いることを特徴とする特許請求の範囲第１項記載の
半導体装置封止用エポキシ樹脂組成物。(2) The epoxy resin composition for encapsulating a semiconductor device according to claim 1, wherein the metal chelate compound is at least one selected from Zr-chelate, Ti chelate, and Al chelate compound.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61276635A JPH0725994B2 (en) | 1986-11-21 | 1986-11-21 | Epoxy resin composition for semiconductor device encapsulation |
| KR870013097A KR880006774A (en) | 1986-11-21 | 1987-11-20 | Electronic component including molding resin composition and molded article thereof |
| DE19873739489 DE3739489A1 (en) | 1986-11-21 | 1987-11-21 | Compression-moulding resin compound, and compression-moulded electronic component |
| US07/796,896 US5252639A (en) | 1986-11-21 | 1991-11-25 | Molding resin composition and molded electronic component |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61276635A JPH0725994B2 (en) | 1986-11-21 | 1986-11-21 | Epoxy resin composition for semiconductor device encapsulation |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63130621A true JPS63130621A (en) | 1988-06-02 |
| JPH0725994B2 JPH0725994B2 (en) | 1995-03-22 |
Family
ID=17572192
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61276635A Expired - Lifetime JPH0725994B2 (en) | 1986-11-21 | 1986-11-21 | Epoxy resin composition for semiconductor device encapsulation |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPH0725994B2 (en) |
| KR (1) | KR880006774A (en) |
| DE (1) | DE3739489A1 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2642470B2 (en) * | 1989-02-23 | 1997-08-20 | 株式会社東芝 | Encapsulating resin composition and resin-encapsulated semiconductor device |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS512385A (en) * | 1974-06-24 | 1976-01-09 | Hitachi Ltd | HANDOTAISOCHIFUSHOJUSHISOSEIBUTSU |
| JPS56160056A (en) * | 1980-05-15 | 1981-12-09 | Toshiba Corp | Resin sealing type semiconductor device |
| JPS57119947A (en) * | 1981-01-19 | 1982-07-26 | Toshiba Corp | Epoxy resin composition |
| JPS57153022A (en) * | 1981-03-18 | 1982-09-21 | Toshiba Corp | Resin-sealed semiconductor device |
| JPS58175850A (en) * | 1982-04-08 | 1983-10-15 | Toshiba Corp | Sealing of electronic parts |
| JPS619425A (en) * | 1984-06-26 | 1986-01-17 | Toyota Central Res & Dev Lab Inc | Epoxy resin composition |
| JPS6131423A (en) * | 1984-07-23 | 1986-02-13 | Toyota Central Res & Dev Lab Inc | Epoxy resin composition |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2919811A1 (en) * | 1978-05-19 | 1979-11-22 | Dow Corning Ltd | Organo-siloxane mould release compsns. - giving more mouldings per application, and improved surface quality |
| US4588784A (en) * | 1984-10-12 | 1986-05-13 | Essex Group, Inc. | Aromatic titanate modified nylon magnet wire insulation coating |
-
1986
- 1986-11-21 JP JP61276635A patent/JPH0725994B2/en not_active Expired - Lifetime
-
1987
- 1987-11-20 KR KR870013097A patent/KR880006774A/en not_active Application Discontinuation
- 1987-11-21 DE DE19873739489 patent/DE3739489A1/en active Granted
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS512385A (en) * | 1974-06-24 | 1976-01-09 | Hitachi Ltd | HANDOTAISOCHIFUSHOJUSHISOSEIBUTSU |
| JPS56160056A (en) * | 1980-05-15 | 1981-12-09 | Toshiba Corp | Resin sealing type semiconductor device |
| JPS57119947A (en) * | 1981-01-19 | 1982-07-26 | Toshiba Corp | Epoxy resin composition |
| JPS57153022A (en) * | 1981-03-18 | 1982-09-21 | Toshiba Corp | Resin-sealed semiconductor device |
| JPS58175850A (en) * | 1982-04-08 | 1983-10-15 | Toshiba Corp | Sealing of electronic parts |
| JPS619425A (en) * | 1984-06-26 | 1986-01-17 | Toyota Central Res & Dev Lab Inc | Epoxy resin composition |
| JPS6131423A (en) * | 1984-07-23 | 1986-02-13 | Toyota Central Res & Dev Lab Inc | Epoxy resin composition |
Also Published As
| Publication number | Publication date |
|---|---|
| DE3739489C2 (en) | 1993-06-17 |
| DE3739489A1 (en) | 1988-06-09 |
| KR880006774A (en) | 1988-07-25 |
| JPH0725994B2 (en) | 1995-03-22 |
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