JPS63127151U - - Google Patents
Info
- Publication number
- JPS63127151U JPS63127151U JP1752987U JP1752987U JPS63127151U JP S63127151 U JPS63127151 U JP S63127151U JP 1752987 U JP1752987 U JP 1752987U JP 1752987 U JP1752987 U JP 1752987U JP S63127151 U JPS63127151 U JP S63127151U
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor devices
- semiconductor
- case
- semiconductor element
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 15
- 239000004020 conductor Substances 0.000 claims description 2
- 238000001816 cooling Methods 0.000 claims description 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
- H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
Description
第１図は、この考案の半導体装置に使用する加
圧接触型半導体素子の断面図、第２図は、この考
案の一実施例を示す半導体装置の平面図、第３図
は、上記半導体装置の正面図、第４図は、従来の
半導体装置の平面図、第５図は、上記半導体装置
の断面図、第６図は、この考案および従来の半導
体装置に内蔵される半導体素子の回路構成を示す
回路図である。
３……絶縁層、４……冷却フイン、１５，２３
ａ，２３ｂ……内部接続導体、２０……加圧接触
型半導体素子。
FIG. 1 is a sectional view of a pressure contact type semiconductor element used in the semiconductor device of this invention, FIG. 2 is a plan view of a semiconductor device showing an embodiment of this invention, and FIG. 3 is a cross-sectional view of the semiconductor device described above. 4 is a plan view of a conventional semiconductor device, FIG. 5 is a cross-sectional view of the semiconductor device, and FIG. 6 is a circuit configuration of a semiconductor element built in this invention and a conventional semiconductor device. FIG. 3... Insulating layer, 4... Cooling fin, 15, 23
a, 23b... Internal connection conductor, 20... Pressure contact type semiconductor element.
Claims (1)
冷却フイン上に配置され、前記半導体素子を覆う
ように前記放熱板上に配置されたケースの上面に
、前記半導体素子に接続された配線用の内部接続
導体の一端が端子として引出される構造の半導体
装置において、前記ケースに内蔵される半導体素
子として加圧接触構造の半導体素子を用いたこと
を特徴とする半導体装置。 At least two semiconductor devices are placed on a cooling fin with an insulating layer interposed therebetween, and an internal space for wiring connected to the semiconductor devices is provided on the upper surface of the case placed on the heat sink so as to cover the semiconductor devices. 1. A semiconductor device having a structure in which one end of a connecting conductor is drawn out as a terminal, characterized in that a semiconductor element having a pressure contact structure is used as a semiconductor element built into the case.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1752987U JPS63127151U (en) | 1987-02-09 | 1987-02-09 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1752987U JPS63127151U (en) | 1987-02-09 | 1987-02-09 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63127151U true JPS63127151U (en) | 1988-08-19 |
Family
ID=30810372
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1752987U Pending JPS63127151U (en) | 1987-02-09 | 1987-02-09 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63127151U (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5958855A (en) * | 1982-08-30 | 1984-04-04 | シ−メンス・アクチエンゲセルシヤフト | Power semiconductor module |
-
1987
- 1987-02-09 JP JP1752987U patent/JPS63127151U/ja active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5958855A (en) * | 1982-08-30 | 1984-04-04 | シ−メンス・アクチエンゲセルシヤフト | Power semiconductor module |
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