JPS5958855A - Power semiconductor module - Google Patents
Power semiconductor moduleInfo
- Publication number
- JPS5958855A JPS5958855A JP15567783A JP15567783A JPS5958855A JP S5958855 A JPS5958855 A JP S5958855A JP 15567783 A JP15567783 A JP 15567783A JP 15567783 A JP15567783 A JP 15567783A JP S5958855 A JPS5958855 A JP S5958855A
- Authority
- JP
- Japan
- Prior art keywords
- leaf spring
- bottom plate
- semiconductor module
- contact
- power semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/32—Holders for supporting the complete device in operation, i.e. detachable fixtures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
- H01L23/4006—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws
- H01L2023/4037—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws characterised by thermal path or place of attachment of heatsink
- H01L2023/4062—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws characterised by thermal path or place of attachment of heatsink heatsink to or through board or cabinet
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
- H01L23/4006—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws
- H01L2023/4075—Mechanical elements
- H01L2023/4087—Mounting accessories, interposers, clamping or screwing parts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
〔発明の属する技術分野〕
本発明は少なくとも二つの半導体素体を備え、次の各項
の特徴をもつ電力用半導体モジュールに関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field to which the Invention Pertains] The present invention relates to a power semiconductor module that includes at least two semiconductor elements and has the following features.
a)半導体素体が容器中に封入されており、b)容器は
底板とその上に位置する枠体を有し、C)底板上に熱良
導性で電気絶縁性の材料からなる基板が位置し、
d)力;板」二に接続導体、半導体素体および上部接続
体としての抑圧ハが積み重ねられ、
e)積重ねられた各部は互忙加圧接触し、f)抑圧片に
は板ばねにより力が加えられ、g)板ばねは積重ね双方
の間に備えられたねじ付きボルトを介して底板に係止さ
れている。a) a semiconductor element is enclosed in a container; b) the container has a bottom plate and a frame positioned above the bottom plate; and C) a substrate made of a thermally conductive and electrically insulating material is disposed on the bottom plate. d) The connecting conductor, the semiconductor element, and the suppressor as the upper connecting body are stacked on the second plate, e) The stacked parts are in contact with each other under pressure, and f) The plate is placed on the suppressor piece. The force is applied by a spring; g) the leaf spring is locked to the bottom plate via a threaded bolt provided between the stacks;
そのような半導体モジュールは西ドイツ国特許出願公開
第2728313号公報に記載されている。この半導体
モジュールの容器は二つの半導体素体の間に存在する連
結体を有する。その連結体は板ばねの一つを保持するね
じが貫通する底まで通る穴を備えている。接触圧力の生
成のためにねじ付きボルトもしくはねじが、ばねが連結
体に尚たるまで底板(Cねじ込−まれる。連結体の高さ
、互いに積み重ねられた部品の高さおよびばね常数は、
ばねが連結体に当たる際に互いに接触している部品に必
較な接触圧力が調整されるように互いに合わせられる。Such a semiconductor module is described in DE 27 28 313 A1. The container of this semiconductor module has a connecting body that exists between two semiconductor bodies. The connection has a hole extending to the bottom through which a screw holding one of the leaf springs passes. For the generation of contact pressure, a threaded bolt or screw is screwed into the bottom plate (C-C) until the spring is still in the connection.The height of the connection, the height of the parts stacked on each other and the spring constant are:
When the spring hits the coupling body, the parts that are in contact with each other are adjusted to each other in such a way that the necessary contact pressure is established.
上述の装置九は、ばね圧力が互いに積重ねられた部品の
厚さの公差と連結体の製作精度とに依存する欠点が付随
する。接触圧力はその上半導体素体の型や面積に個々に
対応して調整できないから、各型に対して圧力が加わる
部分をあらためて互いに合わせなければならない。The above-described device 9 is associated with the disadvantage that the spring pressure depends on the tolerance of the thickness of the parts stacked on top of each other and on the manufacturing accuracy of the coupling. Furthermore, since the contact pressure cannot be adjusted individually depending on the type and area of the semiconductor element, the portions to which pressure is applied for each type must be adjusted to each other.
本発明は上述の半導体モジュールを接触圧を必要に適合
して調整できるように改良することを目的とする。The object of the invention is to improve the above-mentioned semiconductor module in such a way that the contact pressure can be adjusted as required.
本発明は、板ばねと底板との間のねじ付きボルトに接し
て測った間隔が任意に調整可能であることを特徴とする
。The present invention is characterized in that the distance measured in contact with the threaded bolt between the leaf spring and the bottom plate can be adjusted as desired.
本発明を第1図および第2図に関連して一つの実施例を
引用して詳細に説明する。The invention will be explained in detail with reference to one embodiment with reference to FIGS. 1 and 2. FIG.
第1図に示した半導体モジュールは、金属底板1および
蓋体3によって覆われた絶縁枠体2を有する容器を有す
る。底板1の上九二つの基板4が存在する。基板4は熱
良導性であるが、しかし電気絶好性の材料からなる。基
板上にはそれぞれ互いに圧力によって接触されるべき部
品の積層体が71?:み重ねられCいる。見た方向で右
側の積層体はFから上に向けて1妄続接触体5.半導体
素体7゜接触電極10.上部接続接触体12および押圧
片14からなる。左flll+の、積層体は下から上に
向けて接続接触体6.半?n体末体8.接触屯極9.上
部接続接触体11および押圧片13を有する。接続接触
体6および12は、例えは中央で曲げられた帯状導体材
料の単一片からなることができる。接続接触体6゜12
および11,5は導体18もしくは19もしくは20と
接続されている。The semiconductor module shown in FIG. 1 has a container having an insulating frame 2 covered with a metal bottom plate 1 and a lid 3. The semiconductor module shown in FIG. There are two substrates 4 above the bottom plate 1. The substrate 4 consists of a material that is thermally conductive, but electrically optimal. On the board is a stack of parts 71, each of which is to be brought into contact with each other under pressure. :It is superimposed C. The laminate on the right side as viewed from the top has 1 continuous contact member 5. upwards from F. Semiconductor body 7° contact electrode 10. It consists of an upper connection contact body 12 and a pressing piece 14. On the left flll+, the laminate is arranged from bottom to top with connecting contacts 6. half? n-terminal body 8. Contact point9. It has an upper connection contact body 11 and a pressing piece 13. The connecting contacts 6 and 12 can for example consist of a single piece of strip-shaped conductor material bent in the middle. Connection contact body 6゜12
and 11,5 are connected to conductor 18 or 19 or 20.
上述の積層体は、積層体の間に配置されたねじ16を介
して底板1に係止される板ばね15によって加圧される
。ばね15は、ばね15に対する受面を形成−4−るナ
ツト17に対して支えられる。The above-mentioned laminate is pressurized by a leaf spring 15 that is locked to the bottom plate 1 via a screw 16 arranged between the laminates. The spring 15 is supported against a nut 17 which forms a bearing surface for the spring 15.
接触圧力の制御のためにナツト15は締付工具によって
押し下げらねる。この締伺工具を面22(第2図)の上
に置いてばねを所望の接触圧力になるまでおさえつける
。面22はばねが対称的に形成され対称軸がボルトの中
心を通る場合には対称軸の両側に位置し、望ましくは平
面に形成されている。In order to control the contact pressure, the nut 15 cannot be pressed down by the tightening tool. The tightening tool is placed on surface 22 (FIG. 2) to compress the spring to the desired contact pressure. The surfaces 22 are located on either side of the axis of symmetry when the spring is symmetrically formed and the axis of symmetry passes through the center of the bolt, and are preferably plane.
接触圧力が工具によって調整されているならば、ねじ1
6を軽く締める。それから締付は工具を除去する。ナツ
ト17を回転しないようにするために、ばねは平面部2
2の横に肉曲部23を有する。その代りにばねはねじ穴
を持ってもよい。If the contact pressure is adjusted by the tool, screw 1
Tighten 6 lightly. Then tighten and remove the tool. In order to prevent the nut 17 from rotating, the spring is
It has a flesh bend part 23 next to 2. Alternatively, the spring may have a threaded hole.
接触圧力は間隔aの変化によって使用される半導体A体
に個々に合わせられる。The contact pressure is adjusted individually to the semiconductor A body used by varying the distance a.
本発明は容器の底板上だ配置された二つの熱良4性で祇
気絶縁性の基板の上に上下の接続接触体に秋よれた半導
体素体を含む積層体が両積層体の間に位置するねじ付き
ボルトを介して容器底板に係止される板はねによって加
圧されるものにおい(、板ばねと底板間の間隔aを震え
ることができるようにして、半導体と接続体との間の加
圧接触の圧力を調整可能にしたものである。これにより
加圧接触の圧力は部品の寸法公差や半導体素体の型2面
積に対応してその都度調整できるため、常に最適な出力
て加圧接触さぜることができ、信頼性の点です<gだ電
力用半導体モジュールを得ることができる。In the present invention, a laminate including a semiconductor body twisted by upper and lower connection contact members is placed between two laminates on two thermally insulating substrates arranged on the bottom plate of a container. The space between the semiconductor and the connecting body is adjusted so that the distance a between the plate spring and the bottom plate can be adjusted to allow pressure to be applied by the plate spring, which is secured to the bottom plate of the container through the threaded bolt located therein. This makes it possible to adjust the pressure of the pressurized contact between the parts.This allows the pressure of the pressurized contact to be adjusted each time according to the dimensional tolerance of the part and the area of the mold 2 of the semiconductor element, so the output is always optimal. It is possible to create a power semiconductor module with high reliability by making contact under pressure.
第1図は本発明の一実施例の断面図、第2図は第1図の
半i、!7体モソユールの蓋体を除い−Cの平面図であ
る。
1・・4゛属底板、4・・・基板、5+6.11.12
・・・接続接触体、7,8 ・半導体素体、13.14
・・・押圧片、15・・板ばね、]、6・・・ねじ付き
ボルト、22・・・平面部、23−・・湾曲部。
代理人、的工士 山 口 巌
IG I
IG 2FIG. 1 is a sectional view of an embodiment of the present invention, and FIG. 2 is a half i of FIG. 1. It is a top view of -C except for the lid of the 7-body mosoyule. 1... 4゛ bottom plate, 4... board, 5+6.11.12
... Connection contact body, 7, 8 ・Semiconductor element body, 13.14
... Pressing piece, 15... Leaf spring, ], 6... Threaded bolt, 22... Plane portion, 23-... Curved portion. Agent, engineer Iwao Yamaguchi IG I IG 2
Claims (1)
器は底板とその上に位置する枠体を有し、 C)底板上に熱良導性で電気絶縁性の材料からなる基板
が位置し、 d)基板上に接続導体、半導体素体および上部接続体と
しての抑圧片が積み重ねられ、e)積重ねられた各部は
互に加圧接触し、f)押圧片には板ばねによりカが加え
られ、g)板ばねは積重ね双方の間に備えられたねじ付
きボルトを介して底板に係止されているものにおいて、 板ばねと底板との間のねじ付きボルトに接して測った間
隔が調整可能であることを特徴とする電力用半導体モジ
ュール。 2、特許請求の範囲第1項記載のモジュールにおいて、
板ばねが対称的に形成され1その対称軸がボルトの中心
を通り、板ばねが対称軸の両側に締付は工具の載置のた
めに形成された面を有することを特徴とする電力用半導
体モジュール。 3)特許請求の範囲第2項記載のモジュールにおいて、
前記面が平面であることを特徴とする電力用半導体モジ
ュール。 4)特許請求の範囲第3項記載のモジュールにおいて、
板ばねをナツトによって固定し、板ばねの平面部の横に
それぞれ形成された湾曲部によってナツトが回転しない
ようにしたことを特徴とする電力用半導体モジュール。[Claims] 1) a) a semiconductor element is enclosed in a container, b) the container has a bottom plate and a frame positioned above the bottom plate, and C) a thermally conductive and electrically conductive material is disposed on the bottom plate. A substrate made of an insulating material is placed, d) a connecting conductor, a semiconductor element, and a suppressing piece as an upper connecting body are stacked on the substrate, e) each stacked part is brought into pressure contact with each other, and f) Force is applied to the pressing piece by a leaf spring, and g) the leaf spring is secured to the bottom plate via a threaded bolt provided between both stacked sides, and the screw between the leaf spring and the bottom plate A power semiconductor module characterized in that the distance measured in contact with the attached bolt is adjustable. 2. In the module according to claim 1,
A power application characterized in that the leaf spring is formed symmetrically, the axis of symmetry passing through the center of the bolt, and the leaf spring has surfaces formed on both sides of the axis of symmetry for mounting a tightening tool. semiconductor module. 3) In the module according to claim 2,
A power semiconductor module, wherein the surface is flat. 4) In the module according to claim 3,
A power semiconductor module characterized in that a leaf spring is fixed by a nut, and the nut is prevented from rotating by curved parts formed on the sides of the flat parts of the leaf spring.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19823232154 DE3232154A1 (en) | 1982-08-30 | 1982-08-30 | Power semiconductor module |
DE32321546 | 1982-08-30 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5958855A true JPS5958855A (en) | 1984-04-04 |
Family
ID=6172005
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15567783A Pending JPS5958855A (en) | 1982-08-30 | 1983-08-25 | Power semiconductor module |
Country Status (2)
Country | Link |
---|---|
JP (1) | JPS5958855A (en) |
DE (1) | DE3232154A1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63127151U (en) * | 1987-02-09 | 1988-08-19 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3521572A1 (en) * | 1985-06-15 | 1986-12-18 | Brown, Boveri & Cie Ag, 6800 Mannheim | PERFORMANCE SEMICONDUCTOR MODULE WITH CERAMIC SUBSTRATE |
JP4400662B2 (en) * | 2007-09-12 | 2010-01-20 | 株式会社デンソー | Electronic circuit component mounting structure |
DE102014106570B4 (en) * | 2014-05-09 | 2016-03-31 | Semikron Elektronik Gmbh & Co. Kg | Power semiconductor module with switching device and arrangement hereby |
DE102017126716B4 (en) * | 2017-11-14 | 2021-07-22 | Semikron Elektronik Gmbh & Co. Kg | Arrangement with a power semiconductor module with a switching device |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52129378A (en) * | 1976-04-21 | 1977-10-29 | Siemens Ag | Semiconductor device |
JPS52139378A (en) * | 1976-05-17 | 1977-11-21 | Hitachi Ltd | Integrated treatment apparatus for semiconductor wafers |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB211423A (en) * | 1923-10-06 | 1924-02-21 | Leopold Seeger | Improved means for locking nuts |
DE2603813C2 (en) * | 1976-02-02 | 1982-11-18 | Brown, Boveri & Cie Ag, 6800 Mannheim | Clamping device for a thermally and electrically pressure-contacted semiconductor component in disk cell design |
DE2728313A1 (en) * | 1977-06-23 | 1979-01-04 | Siemens Ag | SEMICONDUCTOR COMPONENT |
-
1982
- 1982-08-30 DE DE19823232154 patent/DE3232154A1/en not_active Ceased
-
1983
- 1983-08-25 JP JP15567783A patent/JPS5958855A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52129378A (en) * | 1976-04-21 | 1977-10-29 | Siemens Ag | Semiconductor device |
JPS52139378A (en) * | 1976-05-17 | 1977-11-21 | Hitachi Ltd | Integrated treatment apparatus for semiconductor wafers |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63127151U (en) * | 1987-02-09 | 1988-08-19 |
Also Published As
Publication number | Publication date |
---|---|
DE3232154A1 (en) | 1984-03-01 |
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