JPS63124762U - - Google Patents

Info

Publication number
JPS63124762U
JPS63124762U JP1414587U JP1414587U JPS63124762U JP S63124762 U JPS63124762 U JP S63124762U JP 1414587 U JP1414587 U JP 1414587U JP 1414587 U JP1414587 U JP 1414587U JP S63124762 U JPS63124762 U JP S63124762U
Authority
JP
Japan
Prior art keywords
conductivity type
base layer
groove
layer
polycrystalline silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1414587U
Other languages
English (en)
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1414587U priority Critical patent/JPS63124762U/ja
Publication of JPS63124762U publication Critical patent/JPS63124762U/ja
Pending legal-status Critical Current

Links

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
JP1414587U 1987-02-04 1987-02-04 Pending JPS63124762U (ru)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1414587U JPS63124762U (ru) 1987-02-04 1987-02-04

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1414587U JPS63124762U (ru) 1987-02-04 1987-02-04

Publications (1)

Publication Number Publication Date
JPS63124762U true JPS63124762U (ru) 1988-08-15

Family

ID=30803858

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1414587U Pending JPS63124762U (ru) 1987-02-04 1987-02-04

Country Status (1)

Country Link
JP (1) JPS63124762U (ru)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02144971A (ja) * 1988-11-28 1990-06-04 Hitachi Ltd 半導体装置及びその製造方法
JPH06224435A (ja) * 1992-12-02 1994-08-12 Internatl Business Mach Corp <Ibm> 金属酸化物半導体ヘテロ接合電界効果トランジスタ（ｍｏｓｈｆｅｔ）
JP2001284584A (ja) * 2000-03-30 2001-10-12 Toshiba Corp 半導体装置及びその製造方法
JP2002270841A (ja) * 2001-03-13 2002-09-20 Denso Corp 半導体装置及びその製造方法
JP2012079795A (ja) * 2010-09-30 2012-04-19 Denso Corp 接合型電界効果トランジスタを備えた半導体装置およびその製造方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02144971A (ja) * 1988-11-28 1990-06-04 Hitachi Ltd 半導体装置及びその製造方法
JPH06224435A (ja) * 1992-12-02 1994-08-12 Internatl Business Mach Corp <Ibm> 金属酸化物半導体ヘテロ接合電界効果トランジスタ（ｍｏｓｈｆｅｔ）
JP2001284584A (ja) * 2000-03-30 2001-10-12 Toshiba Corp 半導体装置及びその製造方法
JP2002270841A (ja) * 2001-03-13 2002-09-20 Denso Corp 半導体装置及びその製造方法
JP2012079795A (ja) * 2010-09-30 2012-04-19 Denso Corp 接合型電界効果トランジスタを備えた半導体装置およびその製造方法

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