JPS63124762U - - Google Patents
Info
- Publication number
- JPS63124762U JPS63124762U JP1414587U JP1414587U JPS63124762U JP S63124762 U JPS63124762 U JP S63124762U JP 1414587 U JP1414587 U JP 1414587U JP 1414587 U JP1414587 U JP 1414587U JP S63124762 U JPS63124762 U JP S63124762U
- Authority
- JP
- Japan
- Prior art keywords
- conductivity type
- base layer
- groove
- layer
- polycrystalline silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 2
- 230000000149 penetrating effect Effects 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Landscapes
- Insulated Gate Type Field-Effect Transistor (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1414587U JPS63124762U (cs) | 1987-02-04 | 1987-02-04 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1414587U JPS63124762U (cs) | 1987-02-04 | 1987-02-04 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS63124762U true JPS63124762U (cs) | 1988-08-15 |
Family
ID=30803858
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1414587U Pending JPS63124762U (cs) | 1987-02-04 | 1987-02-04 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS63124762U (cs) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02144971A (ja) * | 1988-11-28 | 1990-06-04 | Hitachi Ltd | 半導体装置及びその製造方法 |
JPH06224435A (ja) * | 1992-12-02 | 1994-08-12 | Internatl Business Mach Corp <Ibm> | 金属酸化物半導体ヘテロ接合電界効果トランジスタ(moshfet) |
JP2001284584A (ja) * | 2000-03-30 | 2001-10-12 | Toshiba Corp | 半導体装置及びその製造方法 |
JP2002270841A (ja) * | 2001-03-13 | 2002-09-20 | Denso Corp | 半導体装置及びその製造方法 |
JP2012079795A (ja) * | 2010-09-30 | 2012-04-19 | Denso Corp | 接合型電界効果トランジスタを備えた半導体装置およびその製造方法 |
-
1987
- 1987-02-04 JP JP1414587U patent/JPS63124762U/ja active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02144971A (ja) * | 1988-11-28 | 1990-06-04 | Hitachi Ltd | 半導体装置及びその製造方法 |
JPH06224435A (ja) * | 1992-12-02 | 1994-08-12 | Internatl Business Mach Corp <Ibm> | 金属酸化物半導体ヘテロ接合電界効果トランジスタ(moshfet) |
JP2001284584A (ja) * | 2000-03-30 | 2001-10-12 | Toshiba Corp | 半導体装置及びその製造方法 |
JP2002270841A (ja) * | 2001-03-13 | 2002-09-20 | Denso Corp | 半導体装置及びその製造方法 |
JP2012079795A (ja) * | 2010-09-30 | 2012-04-19 | Denso Corp | 接合型電界効果トランジスタを備えた半導体装置およびその製造方法 |
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