JPS6312129A - Heating apparatus for semiconductor manufacturing apparatus - Google Patents

Abstract

PURPOSE:To perform the heat treatment of silicon wafers uniformly without depending on the position of a quartz boat, by inserting the quartz boat, on which the silicon wafers to be heat-treated are mounted, through one side of a quartz tube, so that the boat passes through the tube to the opposite side of the quartz tube. CONSTITUTION:When a quartz boat 2 is inserted in a quartz tube 5, a pushing rod 6 is operated and inserted through a hole 5g of a quartz cap 5c. When the boat 2 is slowly inserted in the quartz tube 5 through an inserting hole 5a, silicon wafers 3a mounted on the tip part of the boat 2 are inserted earlier than silicon wafers 3b mounted on the rear part. The temperature of the wafers at the tip part is increased earlier. When the boat 2 is taken out of the quartz tube 5, the boat 2 is moved in the same direction as the inserting direction with the rod 6. At this time, the wafers 3a are taken out of the quartz tube 5 earlier than the wafers 3b, and the temperature of the wafers 3a is decreased. Thus the heat treatment of the wafers 3a and 3b is uniformly carried out without depending on the position of the boat 2.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a heat treatment apparatus for semiconductor manufacturing equipment.

[Conventional technology]

FIG. 4 is a sectional view showing a conventional heat treatment apparatus of this type. In the figure, 1 is an electric furnace heater, 2 is a quartz boat,
Reference numeral 3 denotes silicon wafers placed on the quartz boat 2, and usually 50 to 100 wafers are arranged. 4 is a quartz tube into which the quartz boat 2 is inserted; 4a is a gas inlet of the quartz tube 4; and 4b is an inlet/outlet of the quartz boat 2.

Next, the operation will be explained.

The 50 to 100 silicon wafers 3 arranged on the quartz boat 2 are placed outside the quartz tube 4 at room temperature before being inserted into the quartz tube 4, and are heated to 800 to 100 wafers along with the quartz boat 2 during heat treatment. It is inserted into a quartz tube 4 heated to 900°C. After introducing gas into the quartz tube 4 through the gas inlet 4a to generate an oxide film on the silicon wafer 3, the quartz boat 2 is moved in the opposite direction to the direction in which it was inserted, and the silicon wafer 3 is taken out from the quartz tube 4. Bring to room temperature.

[Problem that the invention seeks to solve]

Since the conventional heat treatment apparatus is configured as described above, the silicon wafer 3 that enters the quartz tube 4 first comes out of the quartz tube 4 last. The silicon wafer 3 that entered the quartz tube 4 first comes out of the quartz tube B, so it undergoes the heat treatment in the shortest time.Therefore, when impurities are diffused, there are problems such as differences in the diffusion depth between the two. was there.

The present invention was made to solve the above-mentioned problems, and an object of the present invention is to provide a heat treatment apparatus that can maintain a substantially constant heat treatment time at any position, regardless of the position of the quartz boat.

[Means for solving problems]

In the heat treatment apparatus according to the present invention, a quartz boat carrying a silicon wafer to be heat treated is inserted from one side of a quartz tube and passed through to the other side of the quartz tube.

[Effect]

In the heat treatment apparatus according to the present invention, since the heat treatment time for 1-tal is approximately the same at any position on the quartz boat, the silicon wafers on the quartz boat are heat treated for the same amount of time, and the diffusion depth of impurities is can be made the same.

〔Example〕

FIG. 1 is a schematic configuration diagram of a heat treatment apparatus for semiconductor manufacturing equipment showing an embodiment of the present invention, in which the same reference numerals as in FIG. 4 indicate the same constituent parts, and 5 is a quartz tube into which the quartz boat 2 is inserted. , quartz caps 5C and 5d are removably provided at the insertion opening 5a and the attachment/detachment opening 5b, respectively. 5e is a gas introduction port for introducing gas into the quartz tube 5. Reference numeral 6 denotes a push rod made of quartz for moving the quartz boat 2. The quartz cap 5c also has a quartz push rod 6.
A hole 5f for operating is formed, and a gas inlet 5g is further formed.

Next, this operation will be explained with reference to FIG.

As shown in FIG. 2, when approximately 100 silicon wafers 3 are arranged on a quartz bowl 1-2 and inserted into a quartz tube 5,
The push rod 6 is operated and inserted through the hole 5g of the quartz cap 5c. At this time, for example, N2 gas or O2 gas is introduced from the gas inlet 5e of the quartz cap 5d on the opposite side, so that the inside of the quartz tube 5 is in a gas atmosphere. When the quartz boat 2 is gradually inserted into the quartz tube 5 through the insertion port 5a, the silicon wafer 3a placed on the front end of the quartz boat 2 is inserted into the quartz tube before the silicon wafer 3b placed on the rear end. 5 and the temperature rises.

Next, when taking out the quartz boat 2 from the quartz tube 5, the quartz boat 2 is further moved by the push rod 6 in the same direction as the direction in which it was inserted. Then, the quartz cap 5d is gradually moved to the state shown in FIG. At this time, the silicon wafer 3a is placed in the quartz tube 5 before the silicon wafer 3b.
It escapes further and the temperature drops.

In this way, the difference in heat treatment depending on the position of the silicon wafer 3 can be reduced.

In addition, in the above embodiment, the push rod 6 was used to operate the quartz boat 2, but as shown in FIG.
This may be done by a combination of the C paddle 8 and its drive device 9, etc.

〔Effect of the invention〕

As explained above, this invention has a quartz cap detachably provided at both ends of a quartz tube, and a quartz boat on which a number of silicon wafers are placed is inserted into the quartz tube and subjected to heat treatment. Since the quartz boat 1- is further moved in the same direction as the quartz boat 1- to escape from the quartz tube, there is an effect that the heat treatment of the silicon wafer can be performed uniformly without depending on the position of the quartz boat.

[Brief explanation of the drawing]

1 and 2 are cross-sectional views showing a schematic configuration of a heat treatment apparatus of a semiconductor manufacturing apparatus according to an embodiment of the present invention, and FIG. 3 are cross-sectional views of a heat treatment apparatus according to another embodiment of the present invention. FIG. 4 is a sectional view showing a conventional heat treatment apparatus. In the figure, 1 is a heater, 2 is a quartz bowl 12.3 is a silicon wafer, 5 is a quartz tube, 5a is an insertion port, 5b is an exit port, 5c and 5d are quartz caps, and 5e. 5g is a gas inlet, 5f is a hole, and 6 is a push rod. Note that the same reference numerals in each figure indicate the same or corresponding parts. Agent Masuo Oiwa (2 others) Figure 1 Figure 2 Figure 3

Claims (1)

[Claims] In a heat treatment equipment for semiconductor manufacturing equipment in which a quartz boat on which a large number of silicon wafers are placed is inserted into a quartz tube into which a required gas is introduced and heat treated, quartz caps are detachably provided on both sides of the quartz tube. The quartz boat is inserted from one end of the quartz tube, and after heat treatment, the quartz boat is moved in the same direction as the direction in which it is inserted into the quartz tube to escape from the other end of the quartz tube. Heat treatment equipment for semiconductor manufacturing equipment.