JPS6312129A - Heating apparatus for semiconductor manufacturing apparatus - Google Patents
Heating apparatus for semiconductor manufacturing apparatusInfo
- Publication number
- JPS6312129A JPS6312129A JP15654486A JP15654486A JPS6312129A JP S6312129 A JPS6312129 A JP S6312129A JP 15654486 A JP15654486 A JP 15654486A JP 15654486 A JP15654486 A JP 15654486A JP S6312129 A JPS6312129 A JP S6312129A
- Authority
- JP
- Japan
- Prior art keywords
- quartz
- boat
- quartz tube
- wafers
- heat treatment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010438 heat treatment Methods 0.000 title claims abstract description 23
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 239000004065 semiconductor Substances 0.000 title claims description 6
- 239000010453 quartz Substances 0.000 claims abstract description 77
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 77
- 235000012431 wafers Nutrition 0.000 claims abstract description 29
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 22
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 22
- 239000010703 silicon Substances 0.000 claims abstract description 22
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 230000037431 insertion Effects 0.000 description 3
- 238000003780 insertion Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、半導体製造装置の熱処理装置に関するもの
である。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a heat treatment apparatus for semiconductor manufacturing equipment.
第4図は従来のこの種の熱処理装置を示す断面図であり
、図において、1は電気炉のヒータ、2は石英ボート、
3は前記石英ボート2上に載置されるシリコンウェハで
、通常50〜100枚が配設される。4は前記石英ボー
ト2が挿入される石英管、4aは前記石英管4のガス導
入口、4bは前記石英ボート2の出入口である。FIG. 4 is a sectional view showing a conventional heat treatment apparatus of this type. In the figure, 1 is an electric furnace heater, 2 is a quartz boat,
Reference numeral 3 denotes silicon wafers placed on the quartz boat 2, and usually 50 to 100 wafers are arranged. 4 is a quartz tube into which the quartz boat 2 is inserted; 4a is a gas inlet of the quartz tube 4; and 4b is an inlet/outlet of the quartz boat 2.
次に動作について説明する。Next, the operation will be explained.
石英ボート2上に並べられた50〜100枚のシリコン
ウェハ3は、石英管4へ挿入される前は、石英管4の外
の常温中におかれており、熱処理時に石英ボート2とと
もに800〜900℃に熱せられた石英管4内に挿入さ
れる。ガス導入口4aからガスを石英管4に導入してシ
リコンウェハ3に酸化膜を生成させた後に、石英ボート
2を挿入した方向とは逆方向に移動させてシリコンウェ
ハ3を石英管4より出し常温にする。The 50 to 100 silicon wafers 3 arranged on the quartz boat 2 are placed outside the quartz tube 4 at room temperature before being inserted into the quartz tube 4, and are heated to 800 to 100 wafers along with the quartz boat 2 during heat treatment. It is inserted into a quartz tube 4 heated to 900°C. After introducing gas into the quartz tube 4 through the gas inlet 4a to generate an oxide film on the silicon wafer 3, the quartz boat 2 is moved in the opposite direction to the direction in which it was inserted, and the silicon wafer 3 is taken out from the quartz tube 4. Bring to room temperature.
従来の熱処理装置は、以上のように構成されているので
、最初に石英管4内に入ったシリコンウェハ3が最後に
石英管4から出てくるため、最も長(熱処理を受け、逆
に最後に石英管4に入ったシリコンウェハ3は最初に石
英管乙から出るため、最も短く熱処理を受ける。したが
って、不純物の拡散を行った場合、両者では、拡散深さ
に差が出るなどの問題点があった。Since the conventional heat treatment apparatus is configured as described above, the silicon wafer 3 that enters the quartz tube 4 first comes out of the quartz tube 4 last. The silicon wafer 3 that entered the quartz tube 4 first comes out of the quartz tube B, so it undergoes the heat treatment in the shortest time.Therefore, when impurities are diffused, there are problems such as differences in the diffusion depth between the two. was there.
この発明は、上記のような問題点を解消するためになさ
れたもので、石英ボートの位置によらずにどの位置でも
ほぼ熱処理時間を一定にできる熱処理装置を得ることを
目的とする。The present invention was made to solve the above-mentioned problems, and an object of the present invention is to provide a heat treatment apparatus that can maintain a substantially constant heat treatment time at any position, regardless of the position of the quartz boat.
この発明にかかる熱処理装置は、熱処理されるシリコン
ウェハが配設された石英ボートを石英管の片側から挿入
し、石英管の反対側に通り抜けるようにしたものである
。In the heat treatment apparatus according to the present invention, a quartz boat carrying a silicon wafer to be heat treated is inserted from one side of a quartz tube and passed through to the other side of the quartz tube.
この発明における熱処理装置は、石英ボートのどの位置
においても1・−タルの熱処理時間がほぼ同じになるこ
とから、石英ボート上のシリコンウェハは、同じ時間熱
処理されることになり、不純物の拡散深さを同じにでき
る。In the heat treatment apparatus according to the present invention, since the heat treatment time for 1-tal is approximately the same at any position on the quartz boat, the silicon wafers on the quartz boat are heat treated for the same amount of time, and the diffusion depth of impurities is can be made the same.
第1図はこの発明の一実施例を示す半導体製造装置の熱
処理装置の概略構成図で、第4図と同一符号は同一構成
部分を示し、5は前記石英ボート2が挿入される石英管
で、挿入口5aおよび着脱口5bにそれぞれ石英キャッ
プ5Cおよび5dが着脱自在に設けられる。5eは前記
石英管5内にガスを導入するガス導入口である。6は前
記石英ボート2を移動させるための石英製の押込み棒で
ある。また石英キャップ5cには、石英製の押込み棒6
を動作させるための穴5fが形成され、さらにガス導入
口5gが形成されている。FIG. 1 is a schematic configuration diagram of a heat treatment apparatus for semiconductor manufacturing equipment showing an embodiment of the present invention, in which the same reference numerals as in FIG. 4 indicate the same constituent parts, and 5 is a quartz tube into which the quartz boat 2 is inserted. , quartz caps 5C and 5d are removably provided at the insertion opening 5a and the attachment/detachment opening 5b, respectively. 5e is a gas introduction port for introducing gas into the quartz tube 5. Reference numeral 6 denotes a push rod made of quartz for moving the quartz boat 2. The quartz cap 5c also has a quartz push rod 6.
A hole 5f for operating is formed, and a gas inlet 5g is further formed.
次にこの動作を第2図とともに説明する。Next, this operation will be explained with reference to FIG.
第2図に示すように石英ボー1−2上に約100枚のシ
リコンウェハ3を並べ、石英管5に挿入する場合には、
押込み棒6を石英キャップ5cの穴5gを通して操作し
挿入する。この時、反対側の石英キャップ5dのガス導
入口5eからは、例えばN2ガスや02ガスが導入され
て石英管5内部はガス雰囲気になっている。石英ボート
2を挿入口5aより徐々に石英管5内に挿入すると、石
英ボート2の先端部に載置されたシリコンウェハ3aが
後端部に載置されたシリコンウェハ3bよりも先に石英
管5内に挿入され温度が上昇する。As shown in FIG. 2, when approximately 100 silicon wafers 3 are arranged on a quartz bowl 1-2 and inserted into a quartz tube 5,
The push rod 6 is operated and inserted through the hole 5g of the quartz cap 5c. At this time, for example, N2 gas or O2 gas is introduced from the gas inlet 5e of the quartz cap 5d on the opposite side, so that the inside of the quartz tube 5 is in a gas atmosphere. When the quartz boat 2 is gradually inserted into the quartz tube 5 through the insertion port 5a, the silicon wafer 3a placed on the front end of the quartz boat 2 is inserted into the quartz tube before the silicon wafer 3b placed on the rear end. 5 and the temperature rises.
次に石英ボート2を石英管5から出す場合には、石英ボ
ート2を押込み棒6によって挿入してきた方向と同じ方
向にさらに移動させる。そして、石英キャップ5dを徐
々に移動させて、第1図の状態になる。この時、シリコ
ンウェハ3aはシリコンウェハ3bよりも先に石英管5
より脱出して温度が下降する。Next, when taking out the quartz boat 2 from the quartz tube 5, the quartz boat 2 is further moved by the push rod 6 in the same direction as the direction in which it was inserted. Then, the quartz cap 5d is gradually moved to the state shown in FIG. At this time, the silicon wafer 3a is placed in the quartz tube 5 before the silicon wafer 3b.
It escapes further and the temperature drops.
このようにしてシリコンウェハ3の位置による熱処理の
差を低減することができる。In this way, the difference in heat treatment depending on the position of the silicon wafer 3 can be reduced.
なお、上記実施例では、石英ボート2の操作に押込み棒
6を使用した場合を示したが、第3図に示すようにSi
Cパドル8とその駆動装置9の組み合わせ等により行っ
てもよい。In addition, in the above embodiment, the push rod 6 was used to operate the quartz boat 2, but as shown in FIG.
This may be done by a combination of the C paddle 8 and its drive device 9, etc.
この発明は以上説明したとおり、石英管の両端に石英キ
ャップをそれぞれ着脱自在に設けてなり、シリコンウェ
ハが多数載置された石英ボートを石英管内に挿入して熱
処理を行った後、前記挿入した方向と同じ方向に石英ボ
ー1−をさらに移動して石英管より脱出させる構成とし
たので、シリコンウェハの熱処理を石英ボートの位置に
依存せずに均一に行える効果がある。As explained above, this invention has a quartz cap detachably provided at both ends of a quartz tube, and a quartz boat on which a number of silicon wafers are placed is inserted into the quartz tube and subjected to heat treatment. Since the quartz boat 1- is further moved in the same direction as the quartz boat 1- to escape from the quartz tube, there is an effect that the heat treatment of the silicon wafer can be performed uniformly without depending on the position of the quartz boat.
第1図、第2図はこの発明の一実施例を示す半導体製造
装置の熱処理装置の概略構成を示す断面図、第3図はこ
の発明の他の実施例を示す熱処理装置の断面図、第4図
は従来の熱処理装置を示す断面図である。
図において、1はヒータ、2は石英ボー12.3はシリ
コンウェハ、5は石英管、5aは挿入口、5bは脱出口
、5c、5dは石英キャップ、5e。
5gはガス導入口、5fは穴、6は押込み棒である。
なお、各図中の同一符号は同一または相当部分を示す。
代理人 大 岩 増 雄 (外2名)第1図
第2図
第3図1 and 2 are cross-sectional views showing a schematic configuration of a heat treatment apparatus of a semiconductor manufacturing apparatus according to an embodiment of the present invention, and FIG. 3 are cross-sectional views of a heat treatment apparatus according to another embodiment of the present invention. FIG. 4 is a sectional view showing a conventional heat treatment apparatus. In the figure, 1 is a heater, 2 is a quartz bowl 12.3 is a silicon wafer, 5 is a quartz tube, 5a is an insertion port, 5b is an exit port, 5c and 5d are quartz caps, and 5e. 5g is a gas inlet, 5f is a hole, and 6 is a push rod. Note that the same reference numerals in each figure indicate the same or corresponding parts. Agent Masuo Oiwa (2 others) Figure 1 Figure 2 Figure 3
Claims (1)
スが導入された石英管内に挿入して熱処理を行う半導体
製造装置の熱処理装置において、前記石英管の両側に石
英キャップをそれぞれ着脱自在に設けてなり、前記石英
ボートを前記石英管の一端から挿入し、熱処理後前記石
英ボートを前記石英管内への挿入方向と同一方向に移動
して前記石英管の他端から脱出させる構成としたことを
特徴とする半導体製造装置の熱処理装置。In a heat treatment equipment for semiconductor manufacturing equipment in which a quartz boat on which a large number of silicon wafers are placed is inserted into a quartz tube into which a required gas is introduced and heat treated, quartz caps are detachably provided on both sides of the quartz tube. The quartz boat is inserted from one end of the quartz tube, and after heat treatment, the quartz boat is moved in the same direction as the direction in which it is inserted into the quartz tube to escape from the other end of the quartz tube. Heat treatment equipment for semiconductor manufacturing equipment.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15654486A JPS6312129A (en) | 1986-07-02 | 1986-07-02 | Heating apparatus for semiconductor manufacturing apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15654486A JPS6312129A (en) | 1986-07-02 | 1986-07-02 | Heating apparatus for semiconductor manufacturing apparatus |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6312129A true JPS6312129A (en) | 1988-01-19 |
Family
ID=15630114
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15654486A Pending JPS6312129A (en) | 1986-07-02 | 1986-07-02 | Heating apparatus for semiconductor manufacturing apparatus |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6312129A (en) |
-
1986
- 1986-07-02 JP JP15654486A patent/JPS6312129A/en active Pending
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