JPS63316428A - Soft landing system for heat treatment furnace of semiconductor wafer - Google Patents
Soft landing system for heat treatment furnace of semiconductor waferInfo
- Publication number
- JPS63316428A JPS63316428A JP62152182A JP15218287A JPS63316428A JP S63316428 A JPS63316428 A JP S63316428A JP 62152182 A JP62152182 A JP 62152182A JP 15218287 A JP15218287 A JP 15218287A JP S63316428 A JPS63316428 A JP S63316428A
- Authority
- JP
- Japan
- Prior art keywords
- soft landing
- treatment furnace
- temperature
- semiconductor wafer
- heat treatment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010438 heat treatment Methods 0.000 title claims abstract description 58
- 239000004065 semiconductor Substances 0.000 title claims abstract description 34
- 238000001514 detection method Methods 0.000 abstract description 2
- 238000000034 method Methods 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 40
- 238000012545 processing Methods 0.000 description 9
- 239000011810 insulating material Substances 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
Landscapes
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、半導体ウェハ熱処理炉用ソフトランディング
システムに関し、フォーク状治具を用いて半導体ウェハ
を半導体ウェハ熱処理炉内に挿入・引き出しを行うシス
テムに関するものである。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a soft landing system for a semiconductor wafer heat treatment furnace, and a system for inserting and pulling out a semiconductor wafer into a semiconductor wafer heat treatment furnace using a fork-shaped jig. It is related to.
従来、この種の半導体ウェハ熱処理炉用ソフトランディ
ングシステムは第４図に示すように高純度石英又はシリ
コンカーバイド等を材質とするソフトランディング用フ
ォーク１を使用している。Conventionally, this type of soft landing system for a semiconductor wafer heat treatment furnace uses a soft landing fork 1 made of high purity quartz, silicon carbide, or the like, as shown in FIG.
このシステムの動作を説明すると、半導体ウェハ熱処理
炉の構造上、ソフトランディング用フォーク１は一端を
ソフトランディングｆ９Ａ動部４の上下移動シャフト３
にソフトランディング用フォーク支持部２で支持されて
片持ち状態となり、他端側に半導体ウェハ（以下ウェハ
と称する）１２を積載した半導体ウェハ積載用ボート（
以下ボートと称する）１１を載せる。、５はソフトラン
ディング駆動部４を案内するガイドレール、 １７はガ
ス導入口である０次に、高純度石英からなる処理管１３
の内部ヘウェハを搭載したソフトランディング用フォー
ク１を挿入し、ウェハを積載したボート１１を処理管１
３の中央部に置き、ソフトランディング用フォーク１の
みが引き出される。その後、ヒーター１４によるウェハ
１２の熱処理が行われ、その熱処理が終了した後、ソフ
トランディング用フォーク１を再塵処理管１３内に挿入
し、ウェハ１２を積載したボート１１をフォーク１に載
せてこれを処理管１３外に引き出していた。以上の如き
手順により、このシステムの動作が行われることが一般
的であった。To explain the operation of this system, due to the structure of the semiconductor wafer heat treatment furnace, the soft landing fork 1 has one end attached to the vertically moving shaft 3 of the soft landing f9A moving part 4.
The boat for loading semiconductor wafers (hereinafter referred to as wafers) is supported by the soft landing fork support part 2 in a cantilevered state, and has semiconductor wafers (hereinafter referred to as wafers) 12 loaded on the other end side.
11 (hereinafter referred to as the boat) is loaded. , 5 is a guide rail that guides the soft landing drive unit 4, 17 is a gas inlet port, and a processing tube 13 made of high-purity quartz.
Insert the soft landing fork 1 loaded with wafers into the inside of the processing tube 1, and move the boat 11 loaded with wafers into the processing tube 1.
3, and only the soft landing fork 1 is pulled out. Thereafter, the wafers 12 are heat-treated by the heater 14, and after the heat treatment is completed, the soft landing fork 1 is inserted into the redusting pipe 13, and the boat 11 loaded with the wafers 12 is placed on the fork 1. was pulled out of the processing tube 13. This system has generally been operated according to the procedure described above.
上述した従来の半導体ウェハ熱処理炉用ソフトランディ
ングシステムに用いられるソフトランディング用フォー
ク１は、ウェハ１２を積載したボート１１の′Ｍ搬を行
うときには、フォーク１の一端が片持ち状態になること
による機械的強度の要求。The soft landing fork 1 used in the above-mentioned conventional soft landing system for a semiconductor wafer heat treatment furnace is mechanically unstable because one end of the fork 1 becomes cantilevered when carrying the boat 11 loaded with wafers 12. Requirements for physical strength.
さらに３ｍ程度の長さが必要ともなる寸法の大きさ等に
より、フォーク自体の熱容量が大となる。Furthermore, the heat capacity of the fork itself becomes large due to its size, which requires a length of about 3 m.
このことは、室温雰囲気にあるウェハ１２．ボート１１
及びソフトランディング用フォーク１が通常４００−１
２００℃の処理管１３内へ挿入するときに生じる炉内温
度の低下につながり、これにより半導体ウェハ熱処理温
度へ復帰するまでの時間がかかる。従って、熱処理時間
が長くなるという欠点がある。This means that the wafer 12 in a room temperature atmosphere. boat 11
And soft landing fork 1 is usually 400-1
When inserted into the processing tube 13 at 200° C., this leads to a decrease in the temperature inside the furnace, which takes time to return to the semiconductor wafer heat treatment temperature. Therefore, there is a drawback that the heat treatment time becomes long.
また、半導体ウェハ熱処理炉ヒーター１４への負荷を増
大させるという欠点もある。Another disadvantage is that the load on the semiconductor wafer heat treatment furnace heater 14 is increased.
本発明の目的は前記問題点を解決する半導体ウェハ熱処
理炉用ソフトランディングシステムを提供することにあ
る。SUMMARY OF THE INVENTION An object of the present invention is to provide a soft landing system for a semiconductor wafer heat treatment furnace that solves the above problems.
」ユ述した従来の半導体ウェハ熱処理炉用ソフトランデ
ィングシステムに対し、本発明は半導体ウェハの熱処理
時間を短くシ、半導体ウェハ熱処理炉ヒーターへの負荷
の低減のために、ソフトランディング用フォークの内部
に加熱部と温度モニターを設は温度制御を行うという独
創的内容を有する。In contrast to the conventional soft landing system for semiconductor wafer heat treatment furnaces described above, the present invention has a fork inside the soft landing fork in order to shorten the heat treatment time of semiconductor wafers and reduce the load on the semiconductor wafer heat treatment furnace heater. It has an original content in that it is equipped with a heating section and a temperature monitor to control the temperature.
本発明は半導体ウェハ熱処理炉用内への半導体ウェハの
挿入・引き出し動作をソフトランディング用フォークを
用いて行う半導体ウェハ熱処理炉用ソフトランディング
システムにおいて、前記ソフトランディング用フォーク
の内部に設けたヒーターと、該ヒーターの温度制御用温
度モニターとを有することを特徴とする半導体ウェハ熱
処理炉用ソフトランディングシステムである。The present invention provides a soft landing system for a semiconductor wafer heat treatment furnace in which a soft landing fork is used to insert and pull out a semiconductor wafer into the semiconductor wafer heat treatment furnace, including a heater provided inside the soft landing fork; A soft landing system for a semiconductor wafer heat treatment furnace is characterized by having a temperature monitor for controlling the temperature of the heater.
次に本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第１図は本発明の一実施例の縦断面図である。FIG. 1 is a longitudinal sectional view of an embodiment of the present invention.
第１図において、ソフトランディング用フォーク１はそ
の内部に、ボート１１を載せる部分を加熱する加熱部９
とソフトランディング用フォーク１の中央を加熱する加
熱部ｌＯが設けられ、また温度検知用の先端温度モニタ
ー８．中央温度モニター７及び支持部側温度モニター６
が設けられている。In FIG. 1, the soft landing fork 1 has a heating section 9 inside that heats the part on which the boat 11 is placed.
and a heating section 10 for heating the center of the soft landing fork 1, and a tip temperature monitor 8 for temperature detection. Central temperature monitor 7 and support part side temperature monitor 6
is provided.
この加熱部９，１０の温度制御については、設定した温
度を一定に保つ、或いは本熱処理炉に近づくにつれて温
度を高くして、本熱処理炉中心部に到達後、加熱を停止
するようにする。或いは時間経過による各々の温度設定
を行う等のパターンを選択できるものである。Regarding the temperature control of the heating parts 9 and 10, the set temperature is kept constant, or the temperature is increased as the temperature approaches the main heat treatment furnace, and heating is stopped after reaching the center of the main heat treatment furnace. Alternatively, it is possible to select a pattern such as setting each temperature according to the passage of time.
ソフトランディング用フォーク１は片持ちの状態でソフ
トランディング用フォーク支持部２に固定され、ガイド
レール５上のソフトランディング駆動部４により移動さ
せられる。これにより、ソフトランディング用フォーク
１はウェハ１２を積載したボート＋１を処理管１３内へ
の挿入・引き出しを行う。先端温度モニター８と中央温
度モニター７を用いてフォーク１の温度を監視すること
により、処理管１３への挿入前に室温であったソフトラ
ンディング用フォーク１．ボート１１．ウェハ１２が処
理管１３への挿入時に生じる急激なる温度変化を防止す
る。さらに処理管１３内よりも高温にならないような種
々の温度制御を行いながらウェハ１２を処理管１３内に
挿入する。また、加熱部９．加熱部１０の影響により、
ソフトランディング用フォーク１の両端の温度差が大き
くならないような温度制御も行う。これは、ソフトラン
ディング用フォーク１の熱膨張の差による破損防止が目
的であり、支持部側温度モニター６は、ソフトランディ
ング用フォーク１の温度差を原因とする破損防止用とし
て利用することも有効である。１４は半導体ウェハ熱処
理炉ヒーター、 １７はガス導入口である。The soft landing fork 1 is fixed to the soft landing fork support part 2 in a cantilevered state, and is moved by the soft landing drive part 4 on the guide rail 5. Thereby, the soft landing fork 1 inserts and pulls out the boat +1 loaded with wafers 12 into the processing tube 13. By monitoring the temperature of the fork 1 using the tip temperature monitor 8 and the center temperature monitor 7, the soft landing fork 1. Boat 11. This prevents sudden temperature changes that occur when the wafer 12 is inserted into the processing tube 13. Furthermore, the wafer 12 is inserted into the processing tube 13 while performing various temperature controls such that the temperature does not become higher than the temperature inside the processing tube 13. In addition, the heating section 9. Due to the influence of the heating section 10,
Temperature control is also performed so that the temperature difference between both ends of the soft landing fork 1 does not become large. The purpose of this is to prevent damage caused by differences in thermal expansion of the fork 1 for soft landing, and the support side temperature monitor 6 can also be effectively used to prevent damage caused by temperature differences in the fork 1 for soft landing. It is. 14 is a semiconductor wafer heat treatment furnace heater, and 17 is a gas inlet.
第２図、第３図は上記実施例に用いられるソフトランデ
ィング用フォーク１の断面図である。ソフトランディン
グ用フォーク１はシリコン力−バイド等の外殻１５．電
気絶縁用の高純度石英等の絶縁材１６．各部位の温度モ
ニター６．７，８．加熱部９゜加熱部ｌＯから構成され
る。絶縁材１６は、各加熱部９、ＩＯからウェハ１２へ
の金属等の不純物による汚染を防止する材質が望ましい
、また、ソフトランディング用フォーク１は、定期的に
フッ酸と硝酸の混合液等で洗浄を行うため、絶縁材１６
と外殻１５とは分離できるようにする。2 and 3 are cross-sectional views of the soft landing fork 1 used in the above embodiment. The soft landing fork 1 has an outer shell 15 made of silicone force-bide or the like. Insulating materials such as high purity quartz for electrical insulation16. Temperature monitor for each part 6.7, 8. It consists of a heating section 9° and a heating section 10. The insulating material 16 is preferably made of a material that prevents contamination by impurities such as metals from each heating section 9 and IO to the wafer 12. Also, the soft landing fork 1 is periodically soaked with a mixed solution of hydrofluoric acid and nitric acid. Insulating material 16 for cleaning
and the outer shell 15 can be separated.
以上説明したように本発明は、半導体ウェハ熱処理炉用
ソフトランディングシステムにおいて、ウェハを積載す
るボートを熱処理炉内へ挿入・引き出しを行うソフトラ
ンディング用フォークの内部にヒーター及び温度モニタ
ーを設け、温度制御を行うことにより、室温雰囲気にあ
るウェハ、ボート、ソフトランディング用フォークを熱
処理炉内への挿入以前に温度制御を行うことができる。As explained above, the present invention provides a soft landing system for a semiconductor wafer heat treatment furnace, in which a heater and a temperature monitor are provided inside the soft landing fork that inserts and pulls out a boat carrying wafers into and out of the heat treatment furnace to control the temperature. By doing this, it is possible to control the temperature of the wafer, boat, and soft landing fork that are in a room temperature atmosphere before inserting them into the heat treatment furnace.
これにより、熱処理炉内のウェハ挿入時の温度降下を減
少でき、熱処理炉内を半導体ウェハ熱処理温度へ復帰さ
せる所要時間を短縮でき、ひいては、熱処理炉での半導
体ウェハ熱処理時間を短くできる。また熱処理炉内の温
度降下の減少により、半導体ウェハ熱処理炉ヒーターへ
の負荷が低減し。As a result, the temperature drop during insertion of the wafer into the heat treatment furnace can be reduced, the time required to return the inside of the heat treatment furnace to the semiconductor wafer heat treatment temperature can be shortened, and the semiconductor wafer heat treatment time in the heat treatment furnace can be shortened. Also, by reducing the temperature drop inside the heat treatment furnace, the load on the semiconductor wafer heat treatment furnace heater is reduced.
半導体ウェハ熱処理炉ヒーターの寿命を延長できる効果
を有するものである。This has the effect of extending the life of the semiconductor wafer heat treatment furnace heater.
第１図は本発明の半導体ウェハ熱処理炉用ソフトランデ
ィングシステムの一実施例を示す縦断面図、第２図は第
１図におけるソフトランディング用フォークを示す縦断
面図、第３図は第２図の八−Ａ線断面図、第４図は従来
の半導体弓エバ熱処理炉用ソフトランディングシステム
を示す縦断面図である。FIG. 1 is a vertical cross-sectional view showing an embodiment of the soft landing system for a semiconductor wafer heat treatment furnace of the present invention, FIG. 2 is a vertical cross-sectional view showing the soft landing fork in FIG. 1, and FIG. FIG. 4 is a vertical sectional view showing a conventional soft landing system for a semiconductor bow evaporation heat treatment furnace.
Claims (1)
入・引き出し動作をソフトランデイング用フォークを用
いて行う半導体ウェハ熱処理炉用ソフトランデイングシ
ステムにおいて、前記ソフトランデイング用フォークの
内部に設けたヒーターと、該ヒーターの温度制御用温度
モニターとを有することを特徴とする半導体ウェハ熱処
理炉用ソフトランデイングシステム。(1) In a soft landing system for a semiconductor wafer heat treatment furnace in which a soft landing fork is used to insert and pull out a semiconductor wafer into the semiconductor wafer heat treatment furnace, a heater provided inside the soft landing fork; A soft landing system for a semiconductor wafer heat treatment furnace, comprising a temperature monitor for controlling the temperature of the heater.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62152182A JPS63316428A (en) | 1987-06-18 | 1987-06-18 | Soft landing system for heat treatment furnace of semiconductor wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62152182A JPS63316428A (en) | 1987-06-18 | 1987-06-18 | Soft landing system for heat treatment furnace of semiconductor wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63316428A true JPS63316428A (en) | 1988-12-23 |
Family
ID=15534846
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62152182A Pending JPS63316428A (en) | 1987-06-18 | 1987-06-18 | Soft landing system for heat treatment furnace of semiconductor wafer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63316428A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0322415A (en) * | 1989-06-19 | 1991-01-30 | Nec Kyushu Ltd | Manufacture apparatus for semiconductor integrated circuit device |
| JPH0354844A (en) * | 1989-07-21 | 1991-03-08 | Tokyo Electron Ltd | Transfer device |
| US5315092A (en) * | 1990-10-11 | 1994-05-24 | Dainippon Screen Mfg. Co., Ltd. | Apparatus for heat-treating wafer by light-irradiation and device for measuring temperature of substrate used in such apparatus |
| JP2008235836A (en) * | 2007-03-23 | 2008-10-02 | Tokyo Electron Ltd | Substrate transfer devices, substrate transfer module, substrate transfer method, and storage medium |
-
1987
- 1987-06-18 JP JP62152182A patent/JPS63316428A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0322415A (en) * | 1989-06-19 | 1991-01-30 | Nec Kyushu Ltd | Manufacture apparatus for semiconductor integrated circuit device |
| JPH0354844A (en) * | 1989-07-21 | 1991-03-08 | Tokyo Electron Ltd | Transfer device |
| US5315092A (en) * | 1990-10-11 | 1994-05-24 | Dainippon Screen Mfg. Co., Ltd. | Apparatus for heat-treating wafer by light-irradiation and device for measuring temperature of substrate used in such apparatus |
| JP2008235836A (en) * | 2007-03-23 | 2008-10-02 | Tokyo Electron Ltd | Substrate transfer devices, substrate transfer module, substrate transfer method, and storage medium |
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