JPS62281337A - Semiconductor manufacturing apparatus - Google Patents

Abstract

PURPOSE:To make it possible to perform oxidation characterized by high controllability of the thicikness of a wafer having a large diameter, exllent homogenity and high reproducibility and to shorten the time of processing, by always monitoring the thickness of an oxide film with a film thickness measuring machine, providing a chamber with high pressure resistance, and making it possible to perform high pressure oxidation with heating by lamps. CONSTITUTION:High pressure oxygen or high pressure steam is introduced in a chamber 3 through a gas inlet port 5 and made to flow in parallel with the surface of a wafer 6. Then the wafer 6 is heated with lamps 2 quickly to oxidizing temperature from room temperature. The oxidation of the wafer 6 is started. During the oxidation, the thickness of the oxide film of the wafer 6 is always monitored with a film thickness measuring machine 1. When the intended film thickness is attained, the heating of the wafer 6 with the lamps is stopped, and the wafer is quickly cooled. When the wafer 6 is cooled to the room temperature, the oxidized wafer 6 is taken out. Thus the oxidation characterized by high controllability of the thickness of the oxide film of the wafer having a large diameter, excellent homogenity and high reproducibility can be performed. Since the wafer is quickly heated and quickly cooled with the lamp heating method, the processing speed is not much different from a conventional batch type electric furnace.

Description

DETAILED DESCRIPTION OF THE INVENTION 3. DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a wafer oxidation apparatus used in the semiconductor industry.

BACKGROUND OF THE INVENTION Conventionally, wafer oxidation has been carried out using an electric furnace as shown in FIG. 2, with a large number of wafers placed on a boat at the same time. In Fig. 2, 4 is a gas inlet, 5 is a gas outlet, and 6 is a gas inlet.
is a wafer, 7 is a heater, 8 is a tube, 9 is a shutter, and 1Q is a boat.

Problems to be Solved by the Invention In an oxidizing apparatus using an electric furnace as shown in FIG. 2, heater 7, tube 8. Because of the large heat capacity of the boat 10 etc., the temperature cannot be controlled during rapid heating and cooling, the flow of gas is not uniform for each wafer on the boat 10, there is a backflow of air from the shutter 9, etc. It is difficult to improve controllability, uniformity, and reproducibility of oxide film thickness on large-diameter wafers.

An object of the present invention is to provide an oxidation apparatus that is capable of oxidizing large-diameter wafers with high controllability, uniformity, and reproducibility in film thickness, and has a short processing time.

Means for Solving the Problems The features of the present invention are that the chamber has a high pressure resistance and high pressure gas can be introduced into the chamber, that the wafer can be heated and cooled rapidly using a lamp method, and that the oxide film thickness can be constantly maintained. It is important to have a film thickness measuring device that can monitor it.

Since the wafer is heated by a lamp, temperature control during rapid heating and cooling of the wafer can be performed with high precision. The gas flow is parallel to the surface of the wafer. The chamber has a high pressure resistance, and high pressure gas (
(oxygen, water vapor, etc.) can be introduced into the chamber/bar. The oxide film thickness of the wafer can be constantly monitored using a film thickness measuring device.

Example In FIG. 1, 1 is a film thickness measuring device, 2 is a lamp, 3 is a chamber, 4 is a gas inlet, 5 is a gas outlet, and 6 is a Ueno
shows.

High-pressure oxygen or high-pressure water vapor is introduced into the chamber 3 from the gas port 6 in FIG. 1, and is caused to flow parallel to the surface of the wafer e. Next, the wafer 6 is heated with the lamp 2 to rapidly heat it from room temperature to the oxidation temperature, and oxidation of the wafer 6 is started. During the oxidation process, the oxide film thickness of the wafer 6 is constantly monitored by the film thickness measuring device 1, and when the target film thickness is reached, the lamp heating of the wafer 6 is stopped and the wafer 6 is rapidly cooled. After cooling the wafer 6 to room temperature, the oxidized wafer 6 is taken out.

Effects of the Invention The oxidation apparatus of the present invention is a single-wafer type and can perform oxidation while monitoring the oxide film thickness of each wafer, resulting in high controllability, uniformity, and reproducibility of oxide film thickness on large-diameter wafers. Can be oxidized. Furthermore, since the chamber 3 capable of high-pressure oxidation is used and the wafer 6 is rapidly heated and cooled using a lamp heating method, there is no significant difference in processing speed from a conventional batch-type electric furnace.

In today's semiconductor industry, where wafers are becoming larger in diameter and more highly integrated, the oxidation apparatus of the present invention is extremely valuable.

[Brief explanation of drawings]

FIG. 1 is a schematic diagram of an oxidizing apparatus according to an embodiment of the present invention, and FIG. 2 is a schematic diagram of an oxidizing apparatus using a conventional electric furnace. 1...Film thickness measuring machine, 2...Lamp, 3...
...Chamber, 4...Gas inlet, 5...Gas outlet, 6...Wafer. Name of agent: Patent attorney Toshio Nakao and one other person
・Mr. Yomo Ward

Claims (1)

[Claims] A semiconductor manufacturing device that constantly monitors oxide film thickness using a film thickness measuring device, has a high-voltage chamber, and is capable of high-pressure oxidation using lamp heating.