CN219610359U

CN219610359U - Wafer pre-temperature control device

Info

Publication number: CN219610359U
Application number: CN202223320953.5U
Authority: CN
Inventors: 李林东; 李新国
Original assignee: Hangzhou Fuxin Semiconductor Co Ltd
Current assignee: Hangzhou Fuxin Semiconductor Co Ltd
Priority date: 2022-12-09
Filing date: 2022-12-09
Publication date: 2023-08-29
Anticipated expiration: 2032-12-09

Abstract

The present disclosure provides a wafer pre-temperature control apparatus for performing a pre-temperature treatment on a wafer prior to processing, comprising: the temperature control mechanism comprises heating equipment and a metal pipeline paved at the bottom of the air lock chamber, wherein the heating equipment is used for heating the metal pipeline, and the metal pipeline is used for heating the wafer. The wafer pre-temperature control device is arranged between the wafer bearing device and the wafer process processing device and is used for carrying out pre-temperature-rising treatment on the wafer before process processing, so that rapid temperature switching of the wafer before process processing can be avoided, the transition stage of wafer temperature change is increased, and huge thermal stress generated in the wafer can be prevented, and the wafer is prevented from being broken.

Description

Wafer pre-temperature control device

Technical Field

The disclosure relates to the field of wafer manufacturing, and in particular relates to a wafer pre-temperature control device.

Background

In the wafer manufacturing process, there are different process temperatures, for example, the photoresist stripping process needs more than 200 ℃, the phosphoric acid has 160 ℃, the sulfuric acid and hydrogen peroxide have 125 ℃, the process needs to rapidly switch the temperature of the wafer, the wafer can be rapidly heated from room temperature to the reaction cavity, and huge thermal stress can be generated in the wafer, and the wafer is easily broken due to the excessive thermal stress.

Disclosure of Invention

The present disclosure is directed to a wafer pre-temperature control device, and more particularly to a wafer pre-temperature control device for controlling a wafer pre-temperature control device.

In order to achieve the above object, the present disclosure provides a wafer pre-temperature control device for pre-heating a wafer before processing, including: the temperature control mechanism comprises heating equipment and a metal pipeline paved at the bottom of the air lock chamber, wherein the heating equipment is used for heating the metal pipeline, and the metal pipeline is used for heating a wafer.

In one embodiment, the metal tubing forms a honeycomb mesh structure.

In one embodiment, the method can be used for pre-cooling the wafer after the wafer is processed, and the flowing cooling liquid is introduced into the metal pipeline.

In an embodiment, the metal pipeline is provided with an inlet for flowing in the cooling liquid and an outlet for flowing out the cooling liquid, the inlet is communicated with the cooling liquid storage mechanism, the outlet is provided with a liquid drawing pump, and the liquid drawing pump is communicated with the cooling liquid storage mechanism.

In an embodiment, the temperature control mechanism further comprises a dielectric layer, the dielectric layer is laid on the upper layer of the metal pipeline, and when the wafer is placed in the airlock, the back surface of the wafer is contacted with the dielectric layer.

In an embodiment, a temperature sensor for detecting the temperature of the wafer is further disposed in the air lock chamber, and the temperature sensor is disposed on the dielectric layer.

In one embodiment, a counter bore for placing the temperature sensor is formed in the dielectric layer, and when the temperature sensor is disposed in the counter bore, the upper surface of the temperature sensor is aligned with the surface of the dielectric layer.

In one embodiment, the system comprises a controller in communication with the warming device, the liquid pump and the temperature sensor.

In one embodiment, the airlock chamber includes a first inlet and a second inlet, the first inlet faces the wafer carrying mechanism, the second inlet faces the device for processing the wafer, and when the wafer is subjected to the pre-heating treatment, the wafer enters from the first inlet and exits from the second inlet; when the wafer is subjected to pre-cooling treatment, the wafer enters from the second inlet and exits from the first inlet and exits.

In one embodiment, a vacuum switching mechanism is disposed within the airlock chamber.

The wafer pre-temperature control device is arranged between the wafer bearing device and the wafer process processing device and is used for carrying out pre-temperature rising treatment on the wafer before process processing or carrying out pre-temperature lowering treatment on the wafer after process processing, so that rapid temperature switching of the wafer before process processing or after process processing can be avoided, the transition stage of temperature change of the wafer is increased, and huge thermal stress generated in the wafer can be prevented, and the wafer is prevented from being broken.

It should be understood that the description in this section is not intended to identify key or critical features of the embodiments of the disclosure, nor is it intended to be used to limit the scope of the disclosure. Other features of the present disclosure will become apparent from the following specification.

Drawings

The above, as well as additional purposes, features, and advantages of exemplary embodiments of the present disclosure will become readily apparent from the following detailed description when read in conjunction with the accompanying drawings. Several embodiments of the present disclosure are illustrated by way of example, and not by way of limitation, in the figures of the accompanying drawings, in which:

in the drawings, the same or corresponding reference numerals indicate the same or corresponding parts.

FIG. 1 is a schematic diagram of a wafer pre-temperature control apparatus according to one embodiment of the present disclosure;

FIG. 2 is a cross-sectional view of an airlock of one embodiment of the present disclosure;

FIG. 3 is a schematic view of a partial structure of a wafer pre-temperature control device according to an embodiment of the present disclosure after concealing an airlock;

fig. 4 is a schematic view of a metal pipe structure according to an embodiment of the present disclosure.

Wherein the above figures include the following reference numerals:

1. an airlock chamber; 11. a first access opening; 12. a second access opening; 21. a metal pipeline; 211. an inlet; 212. an outlet; 22. a cooling liquid storage mechanism; 23. a liquid pump; 3. a dielectric layer; 31. countersink; 4. a temperature sensor.

Detailed Description

In order to make the objects, features and advantages of the present disclosure more comprehensible, the technical solutions in the embodiments of the present disclosure will be clearly described in conjunction with the accompanying drawings in the embodiments of the present disclosure, and it is apparent that the described embodiments are only some embodiments of the present disclosure, but not all embodiments. Based on the embodiments in this disclosure, all other embodiments that a person skilled in the art would obtain without making any inventive effort are within the scope of protection of this disclosure.

The disclosure provides a wafer pre-temperature control device, which is arranged between a wafer bearing device and a wafer process processing device and is used for carrying out pre-temperature-rising treatment on a wafer before process processing or carrying out pre-temperature-reducing treatment on the wafer after process processing so as to prevent the wafer from being broken due to huge thermal stress generated in the wafer.

Referring to fig. 1 and 2, the pre-temperature control apparatus includes: the temperature control mechanism comprises a temperature rising device (not shown in the figure) and a metal pipeline 21 paved at the bottom of the air lock chamber 1, wherein the temperature rising device is used for heating the metal pipeline 21 in the pre-temperature rising process, the temperature rising device can be an electric heating device and is directly connected with the metal pipeline 21, and the metal pipeline 21 is used for heating a wafer by utilizing the heat conductivity of metal; the metal pipeline 21 is internally provided with flowing cooling liquid, and heat exchange is carried out between the metal pipeline and the high-temperature wafer in the pre-cooling process by utilizing the flowing of the cooling liquid, so that heat on the wafer is taken away.

Referring to fig. 1 and 2, in the embodiment of the present disclosure, an airlock 1 includes a first inlet and outlet 11 and a second inlet and outlet 12, the first inlet and outlet 11 is directed to a wafer carrying mechanism, the second inlet and outlet 12 is directed to an apparatus for performing process processing on a wafer, and when a wafer is subjected to a pre-heating process, the wafer enters from the first inlet and outlet 11 and exits from the second inlet and outlet 12; when the wafer is subjected to the pre-cooling treatment, the wafer enters from the second inlet 12 and exits from the first inlet 11.

In the embodiment of the disclosure, the wafer is required to be polluted by dust in the process of pre-heating or pre-cooling, so that a vacuum switching mechanism is arranged in the airlock 1, after the wafer is placed in the airlock 1, the interior of the airlock 1 can be quickly changed into a vacuum state by the vacuum switching mechanism (not shown in the figure), and a vacuum pump can be selected as the vacuum switching mechanism.

Referring to fig. 2 and 3, in the embodiment of the present disclosure, the temperature control mechanism further includes a dielectric layer 3, the dielectric layer 3 is laid on the upper layer of the metal pipe 21, and when the wafer is placed in the airlock 1, the back surface of the wafer contacts the dielectric layer 3.

In the embodiment of the present disclosure, a temperature sensor 4 for detecting the temperature of the wafer is further disposed in the airlock 1, and the temperature sensor 4 is disposed on the dielectric layer 3. Specifically, a counter bore 31 for placing the temperature sensor 4 is formed on the dielectric layer 3, and when the temperature sensor 4 is disposed in the counter bore 31, the upper surface of the temperature sensor 4 is aligned with the upper surface of the dielectric layer 3. After the wafer is placed on the dielectric layer 3, the back surface of the wafer may be contacted with the temperature sensor 4. So that the temperature of the wafer can be detected by the temperature sensor 4 while the wafer is heated by the temperature control mechanism.

Referring to fig. 4, in the embodiment of the present disclosure, the metal pipe 21 constitutes a honeycomb-like net structure, a heating function is achieved by connecting a heating device, and a heating rate is controlled by controlling heating power. The metal pipeline 21 is internally provided with cooling liquid, the cooling liquid flows in the pipeline when the temperature needs to be reduced, and the wafer cooling temperature is controlled through the liquid flow rate and the liquid temperature. The arrangement structure of the metal pipelines 21 of the honeycomb net structure is stable, the metal pipelines are not easy to deform after long-term use, and the honeycomb net structure can enable coils to be uniformly arranged under the same area, so that the uniformity of wafer preheating or preheating cooling is improved.

Referring to fig. 2, in the embodiment of the present disclosure, a metal pipe 21 is fixed at the bottom of the airlock 1.

Referring to fig. 1 and 3, in the embodiment of the present disclosure, an inlet 211 for flowing in a cooling liquid and an outlet 212 for flowing out the cooling liquid are provided on a metal pipe 21, the inlet 211 is communicated with a cooling liquid storage mechanism 22, a liquid pump 23 is provided at the outlet 212, and the liquid pump 23 is communicated with the cooling liquid storage mechanism 22, so that the flow and recycling of the cooling liquid can be realized.

In an undisclosed embodiment, a solenoid valve controlling the flow of coolant into the metal line 21 may be provided at the inlet 211.

Referring to fig. 1-3, in an embodiment of the present disclosure, the pre-temperature control device includes a controller in communication with a temperature raising apparatus, a liquid pump 23, and a temperature sensor 4. Because the temperatures of the process processing procedures are different, the target temperature for preheating the wafer is different, the target temperature for preheating should be half of the difference between the process processing temperature and the room temperature, when the wafer is preheated before the process processing, the heating equipment is controlled by the controller to heat the metal pipeline 21, the operation of the liquid pumping pump 23 is stopped, the temperature of the medium layer 3 is detected by the temperature sensor 4, when the temperature rises to the target temperature for preheating, the wafer is placed into the airlock 1 from the first inlet and outlet 11 until the temperature of the wafer rises from normal temperature to the target temperature for preheating, and finally the wafer is taken out from the second inlet and outlet 12 and is transferred to the process processing device; after the wafer is processed, the wafer needs to be subjected to pre-cooling treatment, the controller controls the operation of the liquid pump 23 to enable the cooling liquid to continuously flow in the metal pipeline 21, the heating equipment stops heating the metal pipeline 21, then the wafer is placed into the airlock 1 from the second inlet and outlet 12 until the temperature of the wafer is slowly reduced to room temperature from the high temperature during the process, and finally the wafer is taken out from the first inlet and outlet 11 and transferred to the wafer carrying device.

It should be appreciated that various forms of the flows shown above may be used to reorder, add, or delete steps. For example, the steps recited in the present disclosure may be performed in parallel, sequentially, or in a different order, provided that the desired results of the disclosed aspects are achieved, and are not limited herein.

Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include at least one such feature. Terms referring to directionality such as "first direction", "second direction", and the like, all refer to a straight line direction unless explicitly defined otherwise. In the description of the present disclosure, the meaning of "a plurality" is two or more, unless explicitly defined otherwise.

The foregoing is merely specific embodiments of the disclosure, but the protection scope of the disclosure is not limited thereto, and any person skilled in the art can easily think about changes or substitutions within the technical scope of the disclosure, and it is intended to cover the scope of the disclosure. Therefore, the protection scope of the present disclosure shall be subject to the protection scope of the claims.

Claims

1. A wafer pre-temperature control device for pre-heating a wafer prior to processing, comprising: the device comprises an air lock chamber (1), wherein a temperature control mechanism is arranged in the air lock chamber (1) and comprises heating equipment and a metal pipeline (21) paved at the bottom of the air lock chamber (1), the heating equipment is used for heating the metal pipeline (21), and the metal pipeline (21) is used for heating a wafer.

2. Wafer pre-temperature control device according to claim 1, characterized in that the metal pipe (21) forms a honeycomb network.

3. The wafer pre-temperature control device according to claim 1, further comprising a pre-temperature reduction treatment for the wafer after the wafer is processed, wherein the metal pipeline (21) is provided with flowing cooling liquid.

4. A wafer pre-temperature control device according to claim 3, characterized in that an inlet (211) for flowing in the cooling liquid and an outlet (212) for flowing out the cooling liquid are arranged on the metal pipeline (21), the inlet (211) is communicated with a cooling liquid storage mechanism (22), a liquid pump (23) is arranged at the outlet (212), and the liquid pump (23) is communicated with the cooling liquid storage mechanism (22).

5. The wafer pre-temperature control device according to claim 4, wherein the temperature control mechanism further comprises a medium layer (3), the medium layer (3) is laid on the upper layer of the metal pipeline (21), and when a wafer is placed in the airlock (1), the back surface of the wafer is contacted with the medium layer (3).

6. The wafer pre-temperature control device according to claim 5, wherein a temperature sensor (4) for detecting the temperature of the wafer is further arranged in the airlock (1), and the temperature sensor (4) is arranged on the dielectric layer (3).

7. The wafer pre-temperature control device according to claim 6, wherein a counter bore (31) for placing the temperature sensor (4) is formed in the dielectric layer (3), and when the temperature sensor (4) is arranged in the counter bore (31), the upper surface of the temperature sensor (4) is aligned with the surface of the dielectric layer (3).

8. The wafer pre-temperature control device according to claim 6, comprising a controller in communication with the temperature raising apparatus, the liquid pump (23) and the temperature sensor (4).

9. A wafer pre-temperature control apparatus according to claim 3, wherein the airlock (1) comprises a first port (11) and a second port (12), the first port (11) being oriented towards the wafer carrying mechanism, the second port (12) being oriented towards the apparatus for performing a process on a wafer, the wafer being fed from the first port (11) and being discharged from the second port (12) when the wafer is subjected to a pre-temperature increase treatment; when the wafer is subjected to pre-cooling treatment, the wafer enters from the second inlet and outlet (12) and exits from the first inlet and outlet (11).

10. The wafer pre-temperature control device according to claim 1, wherein a vacuum switching mechanism is arranged in the airlock (1).