JPS6311672A - 薄膜形成方法 - Google Patents

薄膜形成方法

Info

Publication number
JPS6311672A
JPS6311672A JP15438786A JP15438786A JPS6311672A JP S6311672 A JPS6311672 A JP S6311672A JP 15438786 A JP15438786 A JP 15438786A JP 15438786 A JP15438786 A JP 15438786A JP S6311672 A JPS6311672 A JP S6311672A
Authority
JP
Japan
Prior art keywords
substrate
deposited
electron beam
thin film
deposition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15438786A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0559991B2 (enrdf_load_html_response
Inventor
Shinji Matsui
真二 松井
Katsumi Mori
克己 森
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP15438786A priority Critical patent/JPS6311672A/ja
Publication of JPS6311672A publication Critical patent/JPS6311672A/ja
Publication of JPH0559991B2 publication Critical patent/JPH0559991B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
JP15438786A 1986-06-30 1986-06-30 薄膜形成方法 Granted JPS6311672A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15438786A JPS6311672A (ja) 1986-06-30 1986-06-30 薄膜形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15438786A JPS6311672A (ja) 1986-06-30 1986-06-30 薄膜形成方法

Publications (2)

Publication Number Publication Date
JPS6311672A true JPS6311672A (ja) 1988-01-19
JPH0559991B2 JPH0559991B2 (enrdf_load_html_response) 1993-09-01

Family

ID=15583021

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15438786A Granted JPS6311672A (ja) 1986-06-30 1986-06-30 薄膜形成方法

Country Status (1)

Country Link
JP (1) JPS6311672A (enrdf_load_html_response)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH033351A (ja) * 1989-05-31 1991-01-09 Sony Corp 配線形成方法
KR20220046670A (ko) * 2019-08-16 2022-04-14 상하이 인스티튜트 오브 마이크로시스템 앤드 인포메이션 테크놀로지, 차이니즈 아카데미 오브 사이언시즈 고 스루풋 기상증착 장치 및 기상증착 방법

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH033351A (ja) * 1989-05-31 1991-01-09 Sony Corp 配線形成方法
KR20220046670A (ko) * 2019-08-16 2022-04-14 상하이 인스티튜트 오브 마이크로시스템 앤드 인포메이션 테크놀로지, 차이니즈 아카데미 오브 사이언시즈 고 스루풋 기상증착 장치 및 기상증착 방법
JP2022545076A (ja) * 2019-08-16 2022-10-25 中国科学院上海微系統与信息技術研究所 ハイスループット気相成長デバイス及び気相成長方法
US12209311B2 (en) 2019-08-16 2025-01-28 Shanghai Institute Of Microsystem And Information Technology, Chinese Academy Of Sciences High-throughput vapor deposition apparatus and vapor deposition method

Also Published As

Publication number Publication date
JPH0559991B2 (enrdf_load_html_response) 1993-09-01

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