JPS6310565U - - Google Patents
Info
- Publication number
- JPS6310565U JPS6310565U JP10409186U JP10409186U JPS6310565U JP S6310565 U JPS6310565 U JP S6310565U JP 10409186 U JP10409186 U JP 10409186U JP 10409186 U JP10409186 U JP 10409186U JP S6310565 U JPS6310565 U JP S6310565U
- Authority
- JP
- Japan
- Prior art keywords
- plating layer
- support plate
- lead frame
- lead
- nickel plating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- 238000007747 plating Methods 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910000990 Ni alloy Inorganic materials 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 claims 3
- 229910000521 B alloy Inorganic materials 0.000 claims 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- QDWJUBJKEHXSMT-UHFFFAOYSA-N boranylidynenickel Chemical compound [Ni]#B QDWJUBJKEHXSMT-UHFFFAOYSA-N 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Landscapes
- Lead Frames For Integrated Circuits (AREA)
- Die Bonding (AREA)
Description
第1図と第2図はそれぞれ本考案の第1の実施
例を示す断面図と平面図で、第1図は第2図のA
―A線断面である。第3図と第4図はそれぞれ本
考案の第2の実施例を示す断面図と平面図で、第
3図は第4図のB―B線断面である。 1a,1b……リードフレーム、2……支持板
、3,4,5……リード、11a,11b……光
沢ニツケルメツキ層、12a,12b……ボロン
―ニツケル合金メツキ層、14……半田、15…
…パワートランジスタチツプ、16,17……ア
ルミニウム細線。
例を示す断面図と平面図で、第1図は第2図のA
―A線断面である。第3図と第4図はそれぞれ本
考案の第2の実施例を示す断面図と平面図で、第
3図は第4図のB―B線断面である。 1a,1b……リードフレーム、2……支持板
、3,4,5……リード、11a,11b……光
沢ニツケルメツキ層、12a,12b……ボロン
―ニツケル合金メツキ層、14……半田、15…
…パワートランジスタチツプ、16,17……ア
ルミニウム細線。
Claims (1)
- 半導体チツプを固着する支持板およびリードを
含むリードフレームにおいて、このリードフレー
ムの表面のうち少なくとも前記支持板と前記リー
ド部分の両主面のすべてがニツケルメツキ層で被
覆されているとともに、少なくとも前記支持板の
うち前記半導体チツプが固着される部分および前
記リードのうちワイヤボンデイングが行われる部
分において前記ニツケルメツキ層の上に前記ニツ
ケルメツキ層よりも高硬度であるボロンとニツケ
ルの合金メツキ層が形成されていることを特徴と
する半導体装置用リードフレーム。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10409186U JPS6310565U (ja) | 1986-07-07 | 1986-07-07 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10409186U JPS6310565U (ja) | 1986-07-07 | 1986-07-07 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6310565U true JPS6310565U (ja) | 1988-01-23 |
Family
ID=30977266
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10409186U Pending JPS6310565U (ja) | 1986-07-07 | 1986-07-07 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6310565U (ja) |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS513742U (ja) * | 1974-06-25 | 1976-01-12 | ||
JPS5596662A (en) * | 1979-01-17 | 1980-07-23 | Toshiba Corp | Electronic component member |
JPS57147259A (en) * | 1981-03-05 | 1982-09-11 | Toshiba Corp | Semiconductor device using lead frame |
JPS57166058A (en) * | 1981-04-07 | 1982-10-13 | Hitachi Cable Ltd | Lead frame for semiconductor |
JPS60117761A (ja) * | 1983-11-30 | 1985-06-25 | Toshiba Corp | 半導体装置用リ−ドフレ−ム |
JPS6290954A (ja) * | 1985-10-16 | 1987-04-25 | Kobe Steel Ltd | リ−ドフレ−ム |
-
1986
- 1986-07-07 JP JP10409186U patent/JPS6310565U/ja active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS513742U (ja) * | 1974-06-25 | 1976-01-12 | ||
JPS5596662A (en) * | 1979-01-17 | 1980-07-23 | Toshiba Corp | Electronic component member |
JPS57147259A (en) * | 1981-03-05 | 1982-09-11 | Toshiba Corp | Semiconductor device using lead frame |
JPS57166058A (en) * | 1981-04-07 | 1982-10-13 | Hitachi Cable Ltd | Lead frame for semiconductor |
JPS60117761A (ja) * | 1983-11-30 | 1985-06-25 | Toshiba Corp | 半導体装置用リ−ドフレ−ム |
JPS6290954A (ja) * | 1985-10-16 | 1987-04-25 | Kobe Steel Ltd | リ−ドフレ−ム |