JPS63104339A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS63104339A JPS63104339A JP25100786A JP25100786A JPS63104339A JP S63104339 A JPS63104339 A JP S63104339A JP 25100786 A JP25100786 A JP 25100786A JP 25100786 A JP25100786 A JP 25100786A JP S63104339 A JPS63104339 A JP S63104339A
- Authority
- JP
- Japan
- Prior art keywords
- desired shape
- semiconductor substrate
- polyimide resin
- resin
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 20
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 239000011347 resin Substances 0.000 claims abstract description 15
- 229920005989 resin Polymers 0.000 claims abstract description 15
- 229920001721 polyimide Polymers 0.000 claims abstract description 13
- 239000009719 polyimide resin Substances 0.000 claims abstract description 13
- 229910052751 metal Inorganic materials 0.000 claims abstract description 9
- 239000002184 metal Substances 0.000 claims abstract description 9
- 238000005530 etching Methods 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 5
- 238000000059 patterning Methods 0.000 claims description 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 101150116749 chuk gene Proteins 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
- Thyristors (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体装置の製造方法に関し特に拡散工程での
パターン形成を高精度に実現する方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method of manufacturing a semiconductor device, and particularly to a method of realizing pattern formation in a diffusion process with high precision.
従来この種の方法は、半導体基板上に金属層を形成しこ
れを所望の形状にパターンニングしたのち、感光性樹脂
又は、メタルマスク等を利用してワックスを塗布しこれ
をマスキングとし半導体基板をエツチングしていた。Conventionally, this type of method involves forming a metal layer on a semiconductor substrate, patterning it into a desired shape, and then applying wax using a photosensitive resin or metal mask to mask the semiconductor substrate. He was etching.
上述した従来の方法は、半導体基板上に形成された、金
属層（以下電極領域と称す）の上に例えば感光性樹脂を
選択的に形成し、その後これをマスクとして半導体基板
をエツチング除去し素子を形成していた。しかしながら
この方法では、半導体基板と感光性樹脂との密着性が弱
く電極領域までエツチング液に、侵され形状不良となシ
歩留低下をきたす原因となっていた。In the conventional method described above, for example, a photosensitive resin is selectively formed on a metal layer (hereinafter referred to as an electrode region) formed on a semiconductor substrate, and then the semiconductor substrate is etched away using this as a mask to form an element. was forming. However, in this method, the adhesion between the semiconductor substrate and the photosensitive resin is weak, and the etching solution erodes even the electrode region, resulting in poor shape and reduced yield.
本発明の目的は、上記欠点を除去し、電極領域を含み半
導体基板を再現性良く所望の形状に、エツチングし、形
成する方法を提供することにあシ、電極領域を含む半導
体基板上にポリイミド樹脂を形成し、熱処理を施したの
ち感光性樹脂を用い所望の形状にパターンニングするし
かるのち前記ポリイミド樹脂及び感光性樹脂をマスクと
して半導体基板をエツチングする。An object of the present invention is to eliminate the above-mentioned drawbacks and provide a method for etching and forming a semiconductor substrate including an electrode region into a desired shape with good reproducibility. After forming a resin and subjecting it to heat treatment, it is patterned into a desired shape using a photosensitive resin, and then the semiconductor substrate is etched using the polyimide resin and photosensitive resin as a mask.
本発明の製造方法によれば電極領域を損うことなく半導
体基板を所望の形状に仕上げることを可能ならしめる。According to the manufacturing method of the present invention, it is possible to finish a semiconductor substrate into a desired shape without damaging the electrode area.
次に本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第１図は本発明の平面図であり第２〜５図は第１図のＡ
−Ａ線断面図の製造工程を示す。Figure 1 is a plan view of the present invention, and Figures 2 to 5 are A of Figure 1.
-A cross-sectional view showing the manufacturing process.
第２図に示すよりに半導体基板１に金属層２（本実施例
ではアルミニウム層）を形成しこれを所望の形状２′に
するしかるのち第３図に示す様に、ポリイミド樹脂３を
形成し、これを３５０”０熱処理する。さらに感光性樹
脂４を形成し所望の形状にパターンニングするこの感光
性樹脂４をマスクとしてポリイミド樹脂３をエツチング
し所望の形状にするしかるのち前記ポリイミド樹脂３、
感光性樹脂４をマスクにして半導体基板１本実施例では
シリコン基板をエツチングを本実施例では弗酸、硝酸及
び 酢酸の混合液でおこない、所望の形状に仕上げる第
４図。As shown in FIG. 2, a metal layer 2 (in this example, an aluminum layer) is formed on a semiconductor substrate 1, and this is shaped into a desired shape 2'. Then, as shown in FIG. 3, a polyimide resin 3 is formed. This is heat treated at 350"0. Further, a photosensitive resin 4 is formed and patterned into a desired shape. Using this photosensitive resin 4 as a mask, the polyimide resin 3 is etched into a desired shape. Then, the polyimide resin 3,
In this embodiment, a silicon substrate is etched using a mixed solution of hydrofluoric acid, nitric acid, and acetic acid to finish it into a desired shape using a photosensitive resin 4 as a mask.
第５図は完成した断面図を示す。FIG. 5 shows a completed cross-sectional view.
以上説明したように本発明はポリイミド樹脂を使用し半
導体基板との密着性を改善することにょシミ他領域を損
うことなく半導体基板を所望の形状に仕上げることを可
能とする。As explained above, the present invention uses polyimide resin to improve the adhesion to the semiconductor substrate, thereby making it possible to finish the semiconductor substrate into a desired shape without damaging stains or other areas.
第１図は本発明の一実施例を説明するために示した平面
図である。第２図乃至第５図は本実施例の途中工程を示
すＡ−Ａ断面図である。
１・・・半導体基板、２，２′・・・金属領域（アルミ
ニウム層）、３・・・ポリイミド樹脂、４・・・感光性
樹脂。
代理人 弁理士 内 原 音
第１図 Ａ−
（平面図）
第２図
（Ａ−Ａ断面図）
４、
一
華３図
（断面図）
第４図
（断面図）
第５図
ｕ斤面図）FIG. 1 is a plan view shown for explaining one embodiment of the present invention. FIGS. 2 to 5 are sectional views taken along the line AA, showing intermediate steps in this embodiment. DESCRIPTION OF SYMBOLS 1... Semiconductor substrate, 2, 2'... Metal region (aluminum layer), 3... Polyimide resin, 4... Photosensitive resin. Agent Patent Attorney Uchi Hara Sound Figure 1 A- (Plan view) Figure 2 (A-A sectional view) 4. Ikka Figure 3 (Cross-sectional view) Figure 4 (Cross-sectional view) Figure 5 U loaf side view )
Claims (1)
的にパターンニングする工程と該パターンニングされた
金属層及び基板上にポリイミド樹脂を形成しこれを熱処
理する工程と、該ポリイミド樹脂上に感光性樹脂を形成
し所望部を開口する工程と、上記ポリイミド樹脂及び感
光性樹脂をマスクとして該半導体基板をエッチングする
工程とを有すことを特徴とする半導体装置の製造方法。A step of forming a metal layer on a semiconductor substrate, a step of selectively patterning the metal layer, a step of forming a polyimide resin on the patterned metal layer and the substrate and heat treating it, and a step of forming a polyimide resin on the polyimide resin. A method for manufacturing a semiconductor device, comprising the steps of forming a photosensitive resin and opening a desired portion, and etching the semiconductor substrate using the polyimide resin and photosensitive resin as a mask.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25100786A JPS63104339A (en) | 1986-10-21 | 1986-10-21 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25100786A JPS63104339A (en) | 1986-10-21 | 1986-10-21 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63104339A true JPS63104339A (en) | 1988-05-09 |
Family
ID=17216252
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25100786A Pending JPS63104339A (en) | 1986-10-21 | 1986-10-21 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63104339A (en) |
-
1986
- 1986-10-21 JP JP25100786A patent/JPS63104339A/en active Pending
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