JPH01119028A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPH01119028A
JPH01119028A JP27638487A JP27638487A JPH01119028A JP H01119028 A JPH01119028 A JP H01119028A JP 27638487 A JP27638487 A JP 27638487A JP 27638487 A JP27638487 A JP 27638487A JP H01119028 A JPH01119028 A JP H01119028A
Authority
JP
Japan
Prior art keywords
mask
aluminum
oxide film
nitride film
formed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP27638487A
Inventor
Nobuaki Yamamori
Original Assignee
Nec Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Corp filed Critical Nec Corp
Priority to JP27638487A priority Critical patent/JPH01119028A/en
Publication of JPH01119028A publication Critical patent/JPH01119028A/en
Application status is Pending legal-status Critical

Links

Abstract

PURPOSE: To allow patterns of submicron thick to be formed using an exposing technique with an ordinary light by patterning a material remaining in a sidewall of an intermediate layer as a mask.
CONSTITUTION: Aluminum 2 is bonded to an oxide film 1 to cause an intermediate layer consisting of an oxide film 3 to grow. Such layer is etched with a photoresist 4 as a mask, the photoresist 4 being removed to cause a plasma nitride film 5 to grow on the entire surface of a wafer. When removing the oxide film 3 and the plasma nitride film by means of a reactive ion etching, the plasma nitride film 5 bonded to the side of the oxide film 3 remains due to anisotropy of the etching. The aluminum is etched with the remained nitride film 5 as a mask, an aluminum wiring of about 0.3μm wide save the mask being formed. A polysilicon wiring is also formed with an aluminum sidewall as a mask.
COPYRIGHT: (C)1989,JPO&Japio
JP27638487A 1987-10-30 1987-10-30 Manufacture of semiconductor device Pending JPH01119028A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP27638487A JPH01119028A (en) 1987-10-30 1987-10-30 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP27638487A JPH01119028A (en) 1987-10-30 1987-10-30 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPH01119028A true JPH01119028A (en) 1989-05-11

Family

ID=17568665

Family Applications (1)

Application Number Title Priority Date Filing Date
JP27638487A Pending JPH01119028A (en) 1987-10-30 1987-10-30 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPH01119028A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009507375A (en) * 2005-09-01 2009-02-19 マイクロン テクノロジー, インク. Mask pattern having spacers for increasing pitch and method for forming the same
JP2009212163A (en) * 2008-02-29 2009-09-17 Toshiba Corp Method of fabricating semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5742151A (en) * 1980-08-28 1982-03-09 Fujitsu Ltd Formation of pattern
JPS59107518A (en) * 1982-11-13 1984-06-21 Ibm Method of forming structure having size of submicron range

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5742151A (en) * 1980-08-28 1982-03-09 Fujitsu Ltd Formation of pattern
JPS59107518A (en) * 1982-11-13 1984-06-21 Ibm Method of forming structure having size of submicron range

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009507375A (en) * 2005-09-01 2009-02-19 マイクロン テクノロジー, インク. Mask pattern having spacers for increasing pitch and method for forming the same
US9099314B2 (en) 2005-09-01 2015-08-04 Micron Technology, Inc. Pitch multiplication spacers and methods of forming the same
JP2009212163A (en) * 2008-02-29 2009-09-17 Toshiba Corp Method of fabricating semiconductor device
JP4630906B2 (en) * 2008-02-29 2011-02-09 株式会社東芝 Manufacturing method of semiconductor device

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