JPS63103948A - Detecting method for external lead of resin sealed type semiconductor device - Google Patents

Detecting method for external lead of resin sealed type semiconductor device

Info

Publication number
JPS63103948A
JPS63103948A JP61248439A JP24843986A JPS63103948A JP S63103948 A JPS63103948 A JP S63103948A JP 61248439 A JP61248439 A JP 61248439A JP 24843986 A JP24843986 A JP 24843986A JP S63103948 A JPS63103948 A JP S63103948A
Authority
JP
Japan
Prior art keywords
light
light source
resin layer
support base
external leads
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP61248439A
Other languages
Japanese (ja)
Inventor
Shoichiro Iwabuchi
岩渕 昭一郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP61248439A priority Critical patent/JPS63103948A/en
Publication of JPS63103948A publication Critical patent/JPS63103948A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956Inspecting patterns on the surface of objects
    • G01N21/95684Patterns showing highly reflecting parts, e.g. metallic elements

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE:To speed up measuring operation and make a measurement level quantitative by providing a CCD sensor on a straight line connecting a light source which emits light to a through hole bored in a support base and an external lead. CONSTITUTION:A resin sealed type semiconductor device 1 is constituted by providing a nearly flat sealing resin layer 2 to as to protect a semiconductor element from an external atmosphere and leading plural external leads 3 for connecting with the semiconductor element electrically from the flank of the layer in the same direction. The outward appearance is inspected while plural semiconductor devices 1 are mounted on the support base 6. Namely, the through hole 9 is bored in the support base 6 where the external leads 3 led out of the flank of the flat sealing resin layer 2 are projected, and the CCD sensor 11 is provided on the straight line connecting the light source 10 which emits the light to the through hole 9 and the external leads 3, so that transmitted light from the light source 10 is made incident on it. Thus, the semipermanent- life and maintenance-free CCD sensor is utilized and the advantage of small image distortion at the periphery and in the center is utilized.

Description

【発明の詳細な説明】 〔発明の目的〕 (産業上の利用分野) 本発明は樹脂封止型半導体装置の外部リードに発生する
欠損やリード曲り等を調べる外観検査に好適する。
DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Industrial Field of Application) The present invention is suitable for visual inspection to check for defects, lead bends, etc. occurring in external leads of resin-sealed semiconductor devices.

(従来の技術) 半導体をとりまく厳しい環境にあって、生産性の高い製
造ラインの確立が求められており、その−環として半導
体ウェーハ寸法も大口径化に進んでおり、200閤φ 
以上の半導体単結晶の引上げが可能となっている。
(Prior technology) In the harsh environment surrounding semiconductors, there is a need to establish highly productive manufacturing lines, and as a part of this, the size of semiconductor wafers is also increasing in diameter.
It is now possible to pull the above semiconductor single crystal.

このような大口径化にともなって、人手による半導体ウ
ェーハのハンドリングは困難となり、その搬送ならびに
製造装置へのセツティング等は必然的に自動化が要求さ
れている。一方、超LSIに代表されるように、最近の
半導体デバイスは高集積化、高機能化の進歩は著しく、
それにつれて製造プロセスも複雑多岐にわたっており、
製造ラインの清浄度が製造歩留りに与える影響の度合が
増し、じんあいの発生源である人体を遠ざける観点から
も自動化がすべての面で促進され、多くの機種が実用化
されている。
As semiconductor wafers become larger in diameter, manual handling of semiconductor wafers becomes difficult, and automation is inevitably required for their transportation and setting into manufacturing equipment. On the other hand, recent semiconductor devices, as typified by VLSI, have made remarkable progress in becoming highly integrated and highly functional.
As a result, manufacturing processes have become more complex and diverse.
The cleanliness of production lines has an increasing influence on production yields, automation is being promoted in all aspects to keep the human body away from the source of dust, and many models are being put into practical use.

その一部として半導体装置とりわけ樹脂封止型半導体装
置の外観検査を自動的に行う装置も開発され、すでに実
用化段階に入っている。この装置は樹脂封止型半導体装
置の外観として巣、欠け、傷、リード曲り、リード長な
どを検査するのに工TVカメラで得られる画像信号を一
定のスライスレベルで2値画像に変換して行うもので画
像処理に必要な専用プロセッサとミニコンを内臓して高
速画像ができる視覚センサ応用機器を使用する。
As part of this effort, a device for automatically inspecting the appearance of semiconductor devices, particularly resin-sealed semiconductor devices, has been developed and has already entered the stage of practical use. This equipment converts image signals obtained by a TV camera into binary images at a constant slice level to inspect the appearance of resin-sealed semiconductor devices for cavities, chips, scratches, bent leads, lead lengths, etc. It uses a visual sensor application device that has a built-in dedicated processor and minicomputer necessary for image processing and can produce high-speed images.

これに対してパターン認識技術を利用する手法も考えら
れるが、その誤差限界は3〜4%であるために、微小な
外観不良として0.1%以下の誤差限界が必要な半導体
装置の外観検査にとって今のところ不適当である。
For this purpose, a method using pattern recognition technology can be considered, but the error limit is 3 to 4%, so it is not suitable for external inspection of semiconductor devices, which requires an error limit of 0.1% or less for minute appearance defects. It is inappropriate for now.

(発明が解決しようとする問題点) 検査対象である樹脂封止型半導体装置をITVカメラで
撮像するには適正な照明が必要であり、被写体の表面状
態によっては面内で均一な明るさが得られないことが判
明し、従って2値化画像を得るのに問題となる。
(Problems to be solved by the invention) Appropriate illumination is required to image a resin-sealed semiconductor device to be inspected with an ITV camera, and depending on the surface condition of the object, uniform brightness within the surface may not be achieved. It turns out that it is not possible to obtain a binarized image, thus creating a problem in obtaining a binarized image.

この照明手段である正反射照明とリング照明について照
明条件を一定として分布状態を調査すると、面内にバラ
ツキがあるばかりでなく被写体毎に明るさのレベルが相
違する。更にリング照明についても同様に被写体毎の明
るさのレベルが異なるものの面内でのバラツキは前者よ
り小さいことが判明した。
When examining the distribution state of regular reflection lighting and ring lighting, which are the lighting means, with constant lighting conditions, not only do they vary within the plane, but also the brightness level differs for each subject. Furthermore, it was also found that with ring lighting, although the brightness level differs for each subject, the in-plane variation is smaller than the former.

従って、被写体である樹脂封止型半導体装置の検査面に
明るさの相違する部分があると一定のスライスレベルで
2値化して得られる画像の忠実度が損われる難点を生じ
る。
Therefore, if there are parts with different brightness on the inspection surface of the resin-sealed semiconductor device that is the subject, there is a problem that the fidelity of the image obtained by binarizing at a certain slice level is impaired.

本発明はこの難点を解消した新規な樹脂封止型半導体装
置の外観検査方法に係り、特により簡便な手法により経
費節減を図るものである。
The present invention relates to a novel visual inspection method for resin-sealed semiconductor devices that overcomes this difficulty, and particularly aims to reduce costs by using a simpler method.

〔発明の構成〕[Structure of the invention]

(問題点を解決するための手段) 樹脂封止型半導体装置では半導体素子を外部雰囲気から
保護するのにほぼ扁平な封止樹脂層を設けてありかつそ
の側面からこの半導体素子と電気的に接続する複数のリ
ードを同一方向に整列して導出する。このリードの外観
検査を本発明では前便な手法により実施可能としたもの
で、この樹脂封止型半導体装置の複数個をトレー(以後
支持台と記載する)に収容した状態でこの外観検査を実
施する。即ちこの扁平な封止樹脂層の側面から導出する
リードが投影された支持台には透孔を設け、二の透光に
光を入射する光源とこのリードを直線的に結んだ位置に
CCDセンサーを設けこぎに光源からの透過光を入射す
ることにより外観検査を実施する。
(Means for solving the problem) In a resin-sealed semiconductor device, a substantially flat sealing resin layer is provided to protect the semiconductor element from the external atmosphere, and the semiconductor element is electrically connected to the side surface of the sealing resin layer. A plurality of leads are aligned in the same direction and derived. In the present invention, this visual inspection of the leads can be carried out using a convenient method, and this visual inspection is carried out with a plurality of resin-sealed semiconductor devices housed in a tray (hereinafter referred to as a support stand). implement. In other words, a through hole is provided in the support base onto which the lead leading out from the side surface of the flat sealing resin layer is projected, and a CCD sensor is placed at a position where this lead is linearly connected to a light source that enters light into the second through hole. Visual inspection is performed by providing a saw with transmitted light from a light source incident on the saw.

(作 用) 寿命が半永久的でありかつメンテナンスフリーなCCD
ラインセンサーを本発明では利用し、更に周辺と中央の
画像歪が小さい利点を生かすように配慮している。
(Function) CCD with semi-permanent life and maintenance-free
In the present invention, a line sensor is used, and further consideration is given to taking advantage of the advantage of low image distortion in the periphery and center.

と言うのは最近の樹脂封止型半導体装置ではそのリード
にいわゆる浸漬法により半田層を被覆して、使用機器と
の接続を確実にする方式を採用する場合もあり、従って
リード周面には半田層が盛上って2次曲面を形成するこ
とになる。二の撮像には周辺と中央の画像歪が小さいC
CDラインセンサーが適しており、更に、このCCDラ
インセンサーは光源とリードを結び、透過光を入射する
方式を採用した。
This is because recent resin-encapsulated semiconductor devices sometimes use a method in which the leads are coated with a solder layer using a so-called dipping method to ensure a secure connection with the equipment being used. The solder layer swells to form a quadratic curved surface. For second imaging, image distortion in the periphery and center is small C
A CD line sensor is suitable, and this CCD line sensor uses a method in which a lead is connected to a light source and transmitted light is incident.

(実施例) 第1図乃至第 図により本発明を詳述する。(Example) The present invention will be explained in detail with reference to FIGS.

樹脂封止型半導体装[1は第3図に示すようにほぼ扁平
な封止樹脂層2の内部にICなどの機能素子を造り込ん
だ半導体ペレット(図示せず)を埋設し、その電極と電
気的に接続した外部リード3・・・をこの封止樹脂外に
導出する。この導出は扁平な封止樹脂M2の側面4・・
・から同一方向に整然と折り曲げた外部リード列5によ
っている。
As shown in FIG. 3, a resin-encapsulated semiconductor device [1] is a semiconductor pellet (not shown) in which a functional element such as an IC is embedded inside a substantially flat encapsulating resin layer 2, and its electrodes and The electrically connected external leads 3 are led out of the sealing resin. This derivation is the side surface 4 of the flat sealing resin M2...
・It is made up of external lead rows 5 that are neatly bent in the same direction.

このような樹脂封止型半導体装置上は第2図に示す支持
台6に載置して外観検査を行うが、この支持台6にはこ
の樹脂封止型半導体装置上を載置する凹部7を設け、し
かもリード列5を投影する位置には透光9・・・を形成
するので、従って樹脂封止型半導体装1iW1のリード
列8は支持台6の厚さ方向から透視可能となる。この透
光9としては20X2mmあるいは14X2mN度の寸
法とする。
The appearance of such a resin-sealed semiconductor device is inspected by placing it on a support stand 6 shown in FIG. Moreover, since the light transmitting elements 9 are formed at the positions where the lead arrays 5 are projected, the lead arrays 8 of the resin-sealed semiconductor device 1iW1 can be seen through from the thickness direction of the support base 6. The light transmitting element 9 has dimensions of 20 x 2 mm or 14 x 2 mN degrees.

一方、第1図に示すようにこの支持台6を境にして光源
lO及びCODセンサー11を設置するが。
On the other hand, as shown in FIG. 1, a light source lO and a COD sensor 11 are installed with this support stand 6 as a boundary.

光源としてはリード列8を照明するのに便利なように直
管式蛍光灯が好ましく、センサーとしてはCCDライン
センサーを配置する。第1図では光源10・を支持台6
の下側に設置してCCDラインセンサー11を上方に配
置してしているが、その逆であっても差支えない。直管
式蛍光灯10の設置位置は支持台6の中心としてリード
列8・・・における輝度が均等になるように配慮する。
A straight tube fluorescent lamp is preferably used as the light source for conveniently illuminating the lead row 8, and a CCD line sensor is arranged as the sensor. In Fig. 1, the light source 10 is supported by the support stand 6.
Although the CCD line sensor 11 is placed on the lower side and the CCD line sensor 11 is placed on the upper side, the opposite may be used. The installation position of the straight tube fluorescent lamp 10 is set at the center of the support base 6 so that the brightness in the lead rows 8 . . . is uniform.

このような位置関係にあっては光源10と外部リード列
8・・・が−直線上に結ばれているので、CCDライン
センサー11には透過光が入射されこの外部リードの外
観検査が実施可能になる。具体的には第3図に示した外
部リード3・・・の間隔pip、の差ならびに折曲げ部
との全長の差QiQ2の差を求めることによってリード
曲り、ならびにリード本数などが標準値との比較により
H1’l定可能となる。勿論専用のプロセッサとミニコ
ンを付属機器として使用する。
In such a positional relationship, the light source 10 and the external lead array 8 are connected on a - straight line, so that transmitted light is incident on the CCD line sensor 11, making it possible to perform an appearance inspection of this external lead. become. Specifically, by finding the difference in the interval pip between the external leads 3 and the difference in the total length QiQ2 between the external leads 3 and the bent part shown in Fig. 3, the lead bending and the number of leads can be determined from the standard values. By comparison, H1'l can be determined. Of course, a dedicated processor and minicomputer are used as accessory equipment.

前記封止靭脂層2としてはいわゆるQFP(Quad 
Flat Package)のように正方形や短形状の
ものなども適用可能であり、支持台6に設ける透光9の
寸法はQFP川の支持台6では第2図に示すように凹部
7間のピッチが31mm位であり又封止樹脂層2から導
出した外部リードの全長が約2.8m更に、この外部リ
ードのうち折り曲げてから突出た長さは1.7am程度
である。
The sealing toughness layer 2 is a so-called QFP (Quad
A square or rectangular shape such as a flat package (Flat Package) can also be applied, and the dimensions of the transparent light 9 provided on the support stand 6 are such that the pitch between the recesses 7 is The total length of the external lead led out from the sealing resin layer 2 is about 2.8 m, and the length of the external lead that protrudes after being bent is about 1.7 am.

[発明の効果〕 このように本発明は寿命が半永久的でかつメンテナンス
フリーのCCDラインセンサーを適用して、外部リード
周面に盛上った半田層による2次曲面の検出に好適な中
央と周辺の画像歪が小さい利点を巧みに応用しており、
しかも単一の光源により封止樹脂層側面から導出する外
部リード列の外観検査を実施可能としており、従って測
定の高速化が図られと共に測定レベルの定量化が得られ
るので半導体装置の品質を高めることも可能となる。
[Effects of the Invention] As described above, the present invention applies a CCD line sensor that has a semi-permanent life and is maintenance-free, and provides a central and The advantage of low peripheral image distortion is skillfully applied.
Furthermore, it is possible to perform visual inspection of the external lead array led out from the side surface of the sealing resin layer using a single light source, which speeds up the measurement and quantifies the measurement level, improving the quality of the semiconductor device. It also becomes possible.

又複数の光源使用時に発生する諾々の障害も割愛できる
利点もある。
There is also the advantage that the inevitable troubles that occur when using a plurality of light sources can be avoided.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明に係る検出方式の概要を示す断面図第2
図はこの方式を採用する装置の要部を示す断面図第3図
は樹脂封止型半導体装置の斜視図である。
FIG. 1 is a sectional view showing an outline of the detection method according to the present invention.
The figure is a sectional view showing the main parts of a device employing this method. FIG. 3 is a perspective view of a resin-sealed semiconductor device.

Claims (1)

【特許請求の範囲】[Claims] ほぼ扁平な封止樹脂層と、この封止樹脂層に埋設する半
導体素子と、前記封止樹脂層側面から同一方向に整列し
て導出し前記半導体素子に電気的に接続する複数の外部
リードと、前記封止樹脂層を収容する凹部をもつ支持台
と、この凹部に係止する前記複数の外部リードを投影し
た前記支持台に設ける透光と、この透孔に光を入射する
光源と、この光源ならびに前記外部リードを結ぶ透過光
を入射するCCDセンセとを具備することを特徴とする
樹脂封止型半導体装置の外部リード検出方法
A substantially flat encapsulation resin layer, a semiconductor element embedded in the encapsulation resin layer, and a plurality of external leads that are aligned and led out in the same direction from a side surface of the encapsulation resin layer and electrically connected to the semiconductor element. , a support base having a concave portion for accommodating the sealing resin layer; a light transmission provided on the support base onto which the plurality of external leads are projected that are engaged with the concave portion; and a light source that enters light into the through hole; A method for detecting external leads of a resin-sealed semiconductor device, comprising the light source and a CCD sensor that receives transmitted light that connects the external leads.
JP61248439A 1986-10-21 1986-10-21 Detecting method for external lead of resin sealed type semiconductor device Pending JPS63103948A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61248439A JPS63103948A (en) 1986-10-21 1986-10-21 Detecting method for external lead of resin sealed type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61248439A JPS63103948A (en) 1986-10-21 1986-10-21 Detecting method for external lead of resin sealed type semiconductor device

Publications (1)

Publication Number Publication Date
JPS63103948A true JPS63103948A (en) 1988-05-09

Family

ID=17178142

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61248439A Pending JPS63103948A (en) 1986-10-21 1986-10-21 Detecting method for external lead of resin sealed type semiconductor device

Country Status (1)

Country Link
JP (1) JPS63103948A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100305271B1 (en) * 1998-10-10 2001-12-01 김태진 Semiconductor device inspection device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100305271B1 (en) * 1998-10-10 2001-12-01 김태진 Semiconductor device inspection device

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