JPS63101831A - アクテイブ・マトリクス液晶表示装置及びその製造方法 - Google Patents
アクテイブ・マトリクス液晶表示装置及びその製造方法Info
- Publication number
- JPS63101831A JPS63101831A JP61246655A JP24665586A JPS63101831A JP S63101831 A JPS63101831 A JP S63101831A JP 61246655 A JP61246655 A JP 61246655A JP 24665586 A JP24665586 A JP 24665586A JP S63101831 A JPS63101831 A JP S63101831A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- liquid crystal
- signal electrode
- single crystal
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 84
- 239000011159 matrix material Substances 0.000 title claims description 48
- 238000004519 manufacturing process Methods 0.000 title claims description 25
- 239000000758 substrate Substances 0.000 claims abstract description 85
- 239000012212 insulator Substances 0.000 claims abstract description 41
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 51
- 239000010410 layer Substances 0.000 claims description 32
- 238000000034 method Methods 0.000 claims description 21
- 239000012790 adhesive layer Substances 0.000 claims description 7
- 238000005498 polishing Methods 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 5
- 238000007789 sealing Methods 0.000 claims description 5
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract description 2
- 229910001887 tin oxide Inorganic materials 0.000 abstract description 2
- LXVHCYCAJMQWOY-UHFFFAOYSA-N [Sn].[Ir] Chemical compound [Sn].[Ir] LXVHCYCAJMQWOY-UHFFFAOYSA-N 0.000 abstract 1
- 239000010408 film Substances 0.000 description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 229910052814 silicon oxide Inorganic materials 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 230000003068 static effect Effects 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 210000002858 crystal cell Anatomy 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- 241001270131 Agaricus moelleri Species 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 239000005297 pyrex Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61246655A JPS63101831A (ja) | 1986-10-17 | 1986-10-17 | アクテイブ・マトリクス液晶表示装置及びその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61246655A JPS63101831A (ja) | 1986-10-17 | 1986-10-17 | アクテイブ・マトリクス液晶表示装置及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63101831A true JPS63101831A (ja) | 1988-05-06 |
| JPH0567210B2 JPH0567210B2 (enrdf_load_stackoverflow) | 1993-09-24 |
Family
ID=17151646
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61246655A Granted JPS63101831A (ja) | 1986-10-17 | 1986-10-17 | アクテイブ・マトリクス液晶表示装置及びその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63101831A (enrdf_load_stackoverflow) |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5206749A (en) * | 1990-12-31 | 1993-04-27 | Kopin Corporation | Liquid crystal display having essentially single crystal transistors pixels and driving circuits |
| US5347154A (en) * | 1990-11-15 | 1994-09-13 | Seiko Instruments Inc. | Light valve device using semiconductive composite substrate |
| JPH07506909A (ja) * | 1993-01-19 | 1995-07-27 | ヒューズ・エアクラフト・カンパニー | 単結晶半導体層に集積された電極および駆動装置を含んだ液晶ディスプレイおよびその製造方法 |
| US5528397A (en) * | 1991-12-03 | 1996-06-18 | Kopin Corporation | Single crystal silicon transistors for display panels |
| US5574292A (en) * | 1992-05-13 | 1996-11-12 | Seiko Instruments Inc. | Semiconductor device with monosilicon layer |
| US5618739A (en) * | 1990-11-15 | 1997-04-08 | Seiko Instruments Inc. | Method of making light valve device using semiconductive composite substrate |
| US5644370A (en) * | 1992-01-31 | 1997-07-01 | Canon Kabushiki Kaisha | Liquid crystal display apparatus with a plural layer connection between the TFT drains and the pixel electrodes |
| JPH09511901A (ja) * | 1993-12-23 | 1997-12-02 | アレリックス・バイオファーマスーティカルス・インコーポレーテッド | グルタミン酸受容体（またはｅａａ受容体）ポリヌクレオチド及びその使用 |
| US5757445A (en) * | 1990-12-31 | 1998-05-26 | Kopin Corporation | Single crystal silicon tiles for display panels |
| US6043800A (en) * | 1990-12-31 | 2000-03-28 | Kopin Corporation | Head mounted liquid crystal display system |
| US6072445A (en) * | 1990-12-31 | 2000-06-06 | Kopin Corporation | Head mounted color display system |
| US6140980A (en) * | 1992-03-13 | 2000-10-31 | Kopin Corporation | Head-mounted display system |
| US6593978B2 (en) | 1990-12-31 | 2003-07-15 | Kopin Corporation | Method for manufacturing active matrix liquid crystal displays |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56132378A (en) * | 1980-03-19 | 1981-10-16 | Fujitsu Ltd | Display unit |
| JPS6145221A (ja) * | 1984-08-09 | 1986-03-05 | Matsushita Electric Ind Co Ltd | 画像表示用装置及びその製造方法 |
-
1986
- 1986-10-17 JP JP61246655A patent/JPS63101831A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56132378A (en) * | 1980-03-19 | 1981-10-16 | Fujitsu Ltd | Display unit |
| JPS6145221A (ja) * | 1984-08-09 | 1986-03-05 | Matsushita Electric Ind Co Ltd | 画像表示用装置及びその製造方法 |
Cited By (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5347154A (en) * | 1990-11-15 | 1994-09-13 | Seiko Instruments Inc. | Light valve device using semiconductive composite substrate |
| US5486708A (en) * | 1990-11-15 | 1996-01-23 | Seiko Instruments Inc. | Light valve device using semiconductive composite substrate |
| US5572045A (en) * | 1990-11-15 | 1996-11-05 | Seiko Instruments Inc. | Light valve device using semiconductive composite substrate |
| US5618739A (en) * | 1990-11-15 | 1997-04-08 | Seiko Instruments Inc. | Method of making light valve device using semiconductive composite substrate |
| US5728591A (en) * | 1990-11-15 | 1998-03-17 | Seiko Instruments Inc. | Process for manufacturing light valve device using semiconductive composite substrate |
| US6043800A (en) * | 1990-12-31 | 2000-03-28 | Kopin Corporation | Head mounted liquid crystal display system |
| US6919935B2 (en) | 1990-12-31 | 2005-07-19 | Kopin Corporation | Method of forming an active matrix display |
| US5206749A (en) * | 1990-12-31 | 1993-04-27 | Kopin Corporation | Liquid crystal display having essentially single crystal transistors pixels and driving circuits |
| US6593978B2 (en) | 1990-12-31 | 2003-07-15 | Kopin Corporation | Method for manufacturing active matrix liquid crystal displays |
| US6486929B1 (en) | 1990-12-31 | 2002-11-26 | Kopin Corporation | Bonded layer semiconductor device |
| US6072445A (en) * | 1990-12-31 | 2000-06-06 | Kopin Corporation | Head mounted color display system |
| US5757445A (en) * | 1990-12-31 | 1998-05-26 | Kopin Corporation | Single crystal silicon tiles for display panels |
| US5528397A (en) * | 1991-12-03 | 1996-06-18 | Kopin Corporation | Single crystal silicon transistors for display panels |
| US5644370A (en) * | 1992-01-31 | 1997-07-01 | Canon Kabushiki Kaisha | Liquid crystal display apparatus with a plural layer connection between the TFT drains and the pixel electrodes |
| US6140980A (en) * | 1992-03-13 | 2000-10-31 | Kopin Corporation | Head-mounted display system |
| US5574292A (en) * | 1992-05-13 | 1996-11-12 | Seiko Instruments Inc. | Semiconductor device with monosilicon layer |
| JPH07506909A (ja) * | 1993-01-19 | 1995-07-27 | ヒューズ・エアクラフト・カンパニー | 単結晶半導体層に集積された電極および駆動装置を含んだ液晶ディスプレイおよびその製造方法 |
| JPH09511901A (ja) * | 1993-12-23 | 1997-12-02 | アレリックス・バイオファーマスーティカルス・インコーポレーテッド | グルタミン酸受容体（またはｅａａ受容体）ポリヌクレオチド及びその使用 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0567210B2 (enrdf_load_stackoverflow) | 1993-09-24 |
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