JPS6310120B2 - - Google Patents

Info

Publication number
JPS6310120B2
JPS6310120B2 JP58085906A JP8590683A JPS6310120B2 JP S6310120 B2 JPS6310120 B2 JP S6310120B2 JP 58085906 A JP58085906 A JP 58085906A JP 8590683 A JP8590683 A JP 8590683A JP S6310120 B2 JPS6310120 B2 JP S6310120B2
Authority
JP
Japan
Prior art keywords
carbon black
surface area
oil absorption
silicon source
specific surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP58085906A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59213700A (ja
Inventor
Toshio Nakada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokai Carbon Co Ltd
Original Assignee
Tokai Carbon Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokai Carbon Co Ltd filed Critical Tokai Carbon Co Ltd
Priority to JP58085906A priority Critical patent/JPS59213700A/ja
Publication of JPS59213700A publication Critical patent/JPS59213700A/ja
Publication of JPS6310120B2 publication Critical patent/JPS6310120B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/005—Growth of whiskers or needles
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP58085906A 1983-05-18 1983-05-18 ＳｉＣウイスカ−の製造方法 Granted JPS59213700A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58085906A JPS59213700A (ja) 1983-05-18 1983-05-18 ＳｉＣウイスカ−の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58085906A JPS59213700A (ja) 1983-05-18 1983-05-18 ＳｉＣウイスカ−の製造方法

Publications (2)

Publication Number Publication Date
JPS59213700A JPS59213700A (ja) 1984-12-03
JPS6310120B2 true JPS6310120B2 (enrdf_load_stackoverflow) 1988-03-03

Family

ID=13871875

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58085906A Granted JPS59213700A (ja) 1983-05-18 1983-05-18 ＳｉＣウイスカ−の製造方法

Country Status (1)

Country Link
JP (1) JPS59213700A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61127700A (ja) * 1984-11-21 1986-06-14 Tokai Carbon Co Ltd ＳｉＣウイスカ−の製造方法
FR2611694B1 (fr) * 1987-02-23 1989-05-19 Pechiney Electrometallurgie Procede de preparation de trichites en carbure de silicium

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5821578B2 (ja) * 1975-08-30 1983-05-02 松下電工株式会社 断熱材
JPS599516B2 (ja) * 1981-06-18 1984-03-02 東海カ−ボン株式会社 炭化けい素ホイスカ−の製造方法
JPS599520B2 (ja) * 1981-09-14 1984-03-02 東海カ−ボン株式会社 ｓｉｃホイスカ−の製造方法
JPS599519B2 (ja) * 1981-09-14 1984-03-02 東海カ−ボン株式会社 高品位ｓｉｃホイスカ−の製造方法
JPS599518B2 (ja) * 1981-09-14 1984-03-02 東海カ−ボン株式会社 ｓｉｃホイスカ−の製造法

Also Published As

Publication number Publication date
JPS59213700A (ja) 1984-12-03

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