JPS6298595A - 薄膜ｅｌ素子の製造方法 - Google Patents
薄膜ｅｌ素子の製造方法Info
- Publication number
- JPS6298595A JPS6298595A JP60240163A JP24016385A JPS6298595A JP S6298595 A JPS6298595 A JP S6298595A JP 60240163 A JP60240163 A JP 60240163A JP 24016385 A JP24016385 A JP 24016385A JP S6298595 A JPS6298595 A JP S6298595A
- Authority
- JP
- Japan
- Prior art keywords
- light
- thin film
- heat treatment
- emitting layer
- light emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims description 20
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 22
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 2
- 239000007789 gas Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 238000004544 sputter deposition Methods 0.000 description 8
- 239000012535 impurity Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- -1 rare earth fluoride Chemical class 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910004299 TbF3 Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 238000001552 radio frequency sputter deposition Methods 0.000 description 2
- 238000005477 sputtering target Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- LKNRQYTYDPPUOX-UHFFFAOYSA-K trifluoroterbium Chemical compound F[Tb](F)F LKNRQYTYDPPUOX-UHFFFAOYSA-K 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000004519 grease Substances 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 150000003346 selenoethers Chemical class 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 150000003568 thioethers Chemical class 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Landscapes
- Electroluminescent Light Sources (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60240163A JPS6298595A (ja) | 1985-10-24 | 1985-10-24 | 薄膜ｅｌ素子の製造方法 |
| FI862108A FI83015C (fi) | 1985-05-28 | 1986-05-20 | Tunnfilmelektroluminiscensanordning och process foer dess produktion. |
| EP86106936A EP0209668B1 (en) | 1985-05-28 | 1986-05-22 | Thin film electroluminescence devices and process for producing the same |
| DE8686106936T DE3672916D1 (de) | 1985-05-28 | 1986-05-22 | Duennschicht-elektrolumineszenz-vorrichtungen und verfahren zu deren herstellung. |
| US06/867,814 US4707419A (en) | 1985-05-28 | 1986-05-27 | Thin film EL devices and process for producing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60240163A JPS6298595A (ja) | 1985-10-24 | 1985-10-24 | 薄膜ｅｌ素子の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6298595A true JPS6298595A (ja) | 1987-05-08 |
| JPH0532877B2 JPH0532877B2 (enrdf_load_html_response) | 1993-05-18 |
Family
ID=17055430
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60240163A Granted JPS6298595A (ja) | 1985-05-28 | 1985-10-24 | 薄膜ｅｌ素子の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6298595A (enrdf_load_html_response) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5186088A (en) * | 1975-01-27 | 1976-07-28 | Sharp Kk | Sekishokuhatsukoerekutorominesensuhakumakunoseiseiho |
-
1985
- 1985-10-24 JP JP60240163A patent/JPS6298595A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5186088A (en) * | 1975-01-27 | 1976-07-28 | Sharp Kk | Sekishokuhatsukoerekutorominesensuhakumakunoseiseiho |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0532877B2 (enrdf_load_html_response) | 1993-05-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |