JPS6297368A - 半導体記憶装置 - Google Patents
半導体記憶装置Info
- Publication number
- JPS6297368A JPS6297368A JP61123502A JP12350286A JPS6297368A JP S6297368 A JPS6297368 A JP S6297368A JP 61123502 A JP61123502 A JP 61123502A JP 12350286 A JP12350286 A JP 12350286A JP S6297368 A JPS6297368 A JP S6297368A
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- electrode
- transistor
- substrate
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 19
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 239000003990 capacitor Substances 0.000 claims abstract description 6
- 239000004020 conductor Substances 0.000 claims description 4
- 230000010354 integration Effects 0.000 abstract description 4
- 239000012528 membrane Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
Landscapes
- Semiconductor Memories (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61123502A JPS6297368A (ja) | 1986-05-30 | 1986-05-30 | 半導体記憶装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61123502A JPS6297368A (ja) | 1986-05-30 | 1986-05-30 | 半導体記憶装置 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14569580A Division JPS5660051A (en) | 1980-10-20 | 1980-10-20 | Semiconductor memory device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6297368A true JPS6297368A (ja) | 1987-05-06 |
JPH0340510B2 JPH0340510B2 (enrdf_load_stackoverflow) | 1991-06-19 |
Family
ID=14862204
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP61123502A Granted JPS6297368A (ja) | 1986-05-30 | 1986-05-30 | 半導体記憶装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6297368A (enrdf_load_stackoverflow) |
-
1986
- 1986-05-30 JP JP61123502A patent/JPS6297368A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPH0340510B2 (enrdf_load_stackoverflow) | 1991-06-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4115795A (en) | Semiconductor memory device | |
US5416735A (en) | Non-volatile random access memory with ferroelectric capacitor | |
KR100218275B1 (ko) | 벌크형 1트랜지스터 구조의 강유전체 메모리소자 | |
EP0031490B1 (en) | One device field effect transistor ac stable random access memory array | |
US5012309A (en) | Semiconductor memory device comprising capacitor portions having stacked structures | |
KR840007312A (ko) | 적층 캐패시터형 메모리셀을 갖춘 반도체 기억장치 | |
JP2621181B2 (ja) | Mis型半導体記憶装置 | |
US4118794A (en) | Memory array with larger memory capacitors at row ends | |
JPH05299605A (ja) | 半導体記憶装置 | |
JPS596516B2 (ja) | 半導体記憶装置 | |
JPS6297368A (ja) | 半導体記憶装置 | |
US4571607A (en) | Semiconductor device | |
JPH0410154B2 (enrdf_load_stackoverflow) | ||
JPS6220709B2 (enrdf_load_stackoverflow) | ||
JPS6221273B2 (enrdf_load_stackoverflow) | ||
JPS6297367A (ja) | 半導体記憶装置 | |
JPS6220708B2 (enrdf_load_stackoverflow) | ||
JPS61140171A (ja) | 半導体記憶装置 | |
JPH0821688B2 (ja) | 半導体メモリ装置 | |
JP2555870B2 (ja) | 半導体記憶装置 | |
KR100269208B1 (ko) | 공통 워드라인를 갖는 박막 트랜지스터 강유전체 랜덤 액세스메모리 및 그 작동 방법 | |
JPS5833711B2 (ja) | 半導体メモリ装置 | |
JPS6034272B2 (ja) | 半導体装置 | |
JPH0430747B2 (enrdf_load_stackoverflow) | ||
JPH04340765A (ja) | 強誘電体メモリ |